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Comprehensive understanding of random telegraph noise with physics based simulation

Comprehensive understanding of random telegraph noise with p...

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作者： Higashi, Y. Momo, N. Momose, H.S. Ohguro, T. Matsuzawa, K. Advanced LSI Technology Laboratory Corporate R and D Center Toshiba Corporation Isogo-ku Yokohama 235-8522 Japan Device and Process Development Center Corporate R and D Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9784863481640

Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, considering discretized traps and energy transition in insulator. The models are implemented in a 3D device simulator to consider the device structure effect and bias effect universally. Trap density and trap distribution in insulator are predicted quantitatively with comparison of measured data and simulated data. In addition, we present negative pre-pulse effect for RTN reduction. © 2011 JSAP (Japan Society of Applied Physi.

关键词： Frequency domain analysis

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Novel VTH self-adjusting MISFET with SiN charge trap layer for ultra low power LSI

Novel VTH self-adjusting MISFET with SiN charge trap layer f...

引用

International Electron Devices Meeting (IEDM)

作者： Kosuke Tatsumura Atsushi Kawasumi Shigeru Kawanaka Advanced LSI Technology Laboratory Corporate Research and Development Center Toshiba Corporation Yokohama Japan Wireless & Analog Design Department Center of Semiconductor Research and Development Semiconductor & Storage Products Company Toshiba Corporation Yokohama Japan Advanced CMOS Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Yokohama Japan

A novel V TH self-adjusting FET with SiN charge trap layer is proposed and experimentally demonstrated. The V TH self-adjusting FET has a poly Si/SiN/SiO 2 /Si gate stack and can be introduced to conventional CMOS platform with a small additional cost. The |V TH | of the V TH self-adjusting nFET and pFET decrease on on-state and come back to the initial high value on off-state due to charging and neutralization of the SiN layer by exchange of electrons with gate electrode. The dynamic V TH tuning ability improves both of read and write margins of SRAM. V TH tuning ability of 100mV is achieved by Si-rich SiN film of less than 1nm, which leads to reduction of minimum operating voltage (V DD_min ) of SRAM by 170mV. It is found that switching energy efficiency (energy per a cycle) can be improved largely beyond the limit of conventional FET in ultra low V DD region by V TH self-adjusting function.

关键词： Silicon compounds FETs Logic gates Electron traps Silicon CMOS integrated circuits Switches

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Robust porous SiOCH (k=2.5) for 28nm and beyond technology node

Robust porous SiOCH (k=2.5) for 28nm and beyond technology n...

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IEEE International Conference on Interconnect technology

作者： Janghee Lee Sang Hoon Ahn Insun Jung Kyu-Hee Han Gyeonghee Kim Sang-Don Nam Woo Sung Jeon Byeong Hee Kim Gil Heyun Choi Siyoung Choi Ho-Kyu Kang Chilhee Chung Process Development Team Semiconductor Research and Development Center Samsung Electronics Company Limited Hwasung Gyeonggi South Korea AE Center Analytical Engineering Group Samsung Advanced Institute of Technology Yongin si Gyeonggi South Korea

Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been widely evaluated among the major chipmakers. However, its post-integration k increase was ~0.1 on a 100nm-pitched single damascene line and negligible on a 90nm-pitched trench first metal hardmask dual damascene line. Its superb performance in plasma damage resistance without the sacrifice in its mechanical strength can be attributed to the presence of bridged carbon(s) between Si atoms in addition to the methyl functional group. According to 29 Si and 13 C nuclear magnetic resonance (NMR) spectra, bridged carbon and carbon in the methyl group exist approximately in 1:1 ratio in the robust p-SiOCH.

关键词： Robustness Carbon Plasmas Nuclear magnetic resonance Silicon Atomic measurements Resistance

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Damage detection of composite structures by life-cycle strain mapping using FBG sensors

Damage detection of composite structures by life-cycle strai...

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SAMPE Tech 2011 Conference and Exhibition: Developing Scalable Materials and processes for Our Future

作者： Takahashi, Ichiya Sekine, Kazushi Kume, Masami Takeya, Hajime Iwahori, Yutaka Shu, Minakuchi Takeda, Nobuo Enomoto, Kiyoshi Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Hommachi Amagasaki Hyogo 661-8661 Japan Advanced Composite Group Aerospace Research and Development Japan Aerospace Exploration Agency 6-13-1 Osawa Mitaka Tokyo 181-0015 Japan Graduate School of Frontier Sciences University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan Materials Process Technology Center 3-5-8 Shibakoen Minato-ku Tokyo 105-0011 Japan

ISBN: (纸本)9781934551103

We propose structural health monitoring (SHM) technology based on the strain mapping of composite airframe structures through their life cycles including the stages of molding, machining, assembling, operation and maintenance. Our SHM system detects damages and deformation harmful to the structures by strain mapping using fiber Bragg grating (FBG) sensors. FBG sensors are suitable for life-cycle strain monitoring because reflection spectra of FBG sensors correspond to the strain applied to FBGs, which enables us to measure the strain change since the sensors were installed in structures. In this report, we conducted strain monitoring test of skin-stringer panel specimens with debondings which had different sizes and were inserted in different locations of specimens. It was confirmed that strain distribution varied with debonding size and inserted locations. In addition, we conducted strain monitoring test of open-hole CFRP panel under cyclic loading. We observed damages around the open holes of the specimen with pulse thermography. As a result, strain changed according to the initiation and propagation of delaminations. These two results demonstrate that FBG sensors can detect stringer debondings and delaminations at bolt holes which arise in composite airframe structures due to operational load in flight.

关键词： Debonding

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Robust porous SiOCH (k=2.5) for 28nm and beyond technology node

Robust porous SiOCH (k=2.5) for 28nm and beyond technology n...

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IEEE International Interconnect technology Conference and Materials for advanced Metallization

作者： Lee, Janghee Ahn, Sang Hoon Jung, Insun Han, Kyu-Hee Kim, Gyeonghee Nam, Sang-Don Jeon, Woo Sung Kim, Byeong Hee Choi, Gil Heyun Choi, Siyoung Kang, Ho-Kyu Chung, Chilhee Process Development Team Semiconductor RandD Center Samsung Electronics Co. Ltd. San#16 Banwol-Dong Hwasung City Gyeonggi-Do 445-701 Korea Republic of Analytical Engineering Group AE Center Samsung Advanced Institute of Technology Nongseo-Dong Kiheung Ku Yongin-City Gyeonggi-Do 446-712 Korea Republic of

ISBN: (纸本)9781457705038

Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been widely evaluated among the major chipmakers. However, its post-integration k increase was ∼ 0.1 on a 100nm-pitched single damascene line and negligible on a 90nm-pitched trench first metal hardmask dual damascene line. Its superb performance in plasma damage resistance without the sacrifice in its mechanical strength can be attributed to the presence of bridged carbon(s) between Si atoms in addition to the methyl functional group. According to 29Si and 13C nuclear magnetic resonance (NMR) spectra, bridged carbon and carbon in the methyl group exist approximately in 11 ratio in the robust p-SiOCH. © 2011 IEEE.

关键词： Carbon

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0.25μm, 20V High Performance Complementary Bipolar Transistor with Dual EPI and Oxide-Filled Deep Trench Isolation for High Frequency DC-DC Converters

0.25μm, 20V High Performance Complementary Bipolar Transist...

引用

IEEE International Symposium on Power Semiconductor Devices and ICs

作者： T. Kwon S. Haynie A. Sadovnikov P. Allard J. Strout A. Strachan Advanced Process Technology Development Group National Semiconductor Santa Clara CA USA

ISBN: (纸本)9781424484256

Power supply designers must increase the switching frequency of converters to meet industry demands for small sizes. In order to handle high switching frequency, a closed-loop DC-DC converter needs a high-speed error amplifier with low Rdson. Qg LDMOS power switches. In this paper, 0.25μm, 20V high performance complementary bipolar transistors were developed for the high-speed error amplifier design. Dual epi was used to suppress parasitic bipolar behavior that leads to a latch-up. Also, an oxide-filled deep trench isolation was used to minimize parasitic capacitance. As a result, robust 5GHz NPN and 3GHz PNP transistors were integrated with a low Rdson. Qg LDMOS.

关键词： trench isolation DC converter DC to DC converters Parasitic capacitance error amplifier Converters Transistor Device Component DC-DC power convertors LDMOS HIGH-PERFORMANCE Latch Device Component ambipolar Switching frequency Complementary

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Contribution of carbon to growth of strained silicon, dopant activation and diffusion in silicon

Contribution of carbon to growth of strained silicon, dopant...

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10th International Workshop on Junction technology, IWJT-2010

作者： Itokawa, Hiroshi Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation 8 Shinsugita-Cho Isogo-Ku Yokohama 235-8522 Japan

ISBN: (纸本)9781424458691

C incorporation into Si and SiGe has become essential in modern high-performance CMOSFET technology. The reason is that C atom is markedly useful in growing strained Si film and controlling diffusion of dopant atoms in Si and SiGe layers. In this paper, contribution of C atoms to the growth of strained Si and SiGe films, the activation and the diffusion of B in Si are described. Interstitial C atoms inhibit an epitaxial growth of strained Si:C and SiGe films in both case for the C implantation followed by annealing and for the epitaxial growth of SiGe:C by RP-CVD. Suppressions of the localized change in strain caused by C incorporation and the localized C atoms successfully achieve a high-crystallinity strained Si:C and SiGe:C films with a high substitutional concentration. A B activation ratio in Si varies depending on incorporated C concentration in the wide range of C and B concentration. Furthermore, C atoms enhance the growth of stable B-containing clusters at a high B concentration region in Si, resulting in decrease in the B activation ratio in Si layer. © 2010 IEEE.

关键词： Si-Ge alloys

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Copper - Top interconnect reliability for mixed signal applications

Copper - Top interconnect reliability for mixed signal appli...

引用

作者： Kim, Jonggook Connell, Barry O. Teng, W.K. Poulter, Mark W. Advanced Process Technology Development National Semiconductor Corp. 2900 Semiconductor Dr Santa Clara CA 95052 United States

ISBN: (纸本)9781424485246

The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (CuTop) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation. © 2010 IEEE.

关键词： Copper

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Carbon incorporation into substitutional silicon site by carbon cryo ion implantation and metastable recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor

Carbon incorporation into substitutional silicon site by car...

引用

10th International Workshop on Junction technology, IWJT-2010

作者： Itokawa, Hiroshi Miyano, Kiyotaka Oshiki, Yusuke Onoda, Hiroyuki Nishigoori, Masahito Mizushima, Ichiro Suguro, Kyoichi Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Japan System LSI Division Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9781424458691

Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide- semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C]sub) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C]sub at a high ratio of substitution with a high doping activation. © 2010 IEEE.

关键词： Recrystallization (metallurgy)

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Contributionxc of carbon to growth of strained silicon, dopant activation and diffusion in silicon

Contributionxc of carbon to growth of strained silicon, dopa...

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International Workshop on Junction technology

作者： Hiroshi Itokawa Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Yokohama Japan

关键词： Atomic layer deposition Silicon germanium Germanium silicon alloys Semiconductor films Epitaxial growth CMOSFETs CMOS technology Strain control Annealing Capacitive sensors

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