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Interface Analysis of MIM Capacitor Using ZrN Electrodes and ALD-ZrO2 Dielectrics

ECS Transactions 2011年第3期33卷

作者： Jae Hyoung Choi Younsoo Kim Jae Soon Lim Min Young Park Suk-Jin Chung Sang Yeol Kang Kyuho Cho Cha Young Yoo Joo Tae Moon Hyung Ik Lee Ki Hong Kim Hye Ran Choi Jaekwan Chung Process Development Team Samsung Electronics Co. Ltd. San#16 Banwol-Dong Hwaseong-City 445-701 Republic of Korea Samsung Electronics Co. Ltd. Samsung Advanced Institute of Technology

New Metal/Insulator/Metal (MIM) capacitors using ZrN electrode and ALD-ZrO2 dielectric were examined for future DRAM capacitor application. The leakage current density of the capacitors using ZrN bottom electrodes shows no degradation compared to the capacitors using TiN bottom electrodes. However, equivalent oxide thickness (Toxeq.) value of TIZ capacitor was increased about 60% compared to that of TIT capacitor. Although the calculating dielectric constant values of ZrO2 on TiN and ZrN electrode showed no significant difference, the non-zero y-axis intersect around 5.5Aå from Toxeq. variation as a function of the physical thickness of the ZrO2 films suggests an interfacial layer with the low dielectric constant at the interface. XRD and HRTEM image showed that an interfacial Zr2ON2 layer was formed at the ZrN/ZrO2 interface, which might contribute the Toxeq. increase of TIZ-ZrO2 capacitor during the ALD-ZrO2 deposition and rapid thermal anneal step.

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Yield enhancement using source/drain BF2+ implant process optimization

Yield enhancement using source/drain BF2+ implant process op...

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IEEE/SEMI Conference and Workshop on advanced Semiconductor Manufacturing

作者： Tuung Luoh Sheng-Hui Hsieh Chen-Ling Lee Hong Ji Lee Kuo-Liang Wei Chin-Ta Su Ling-Wu Yang Tahone Yang Kuang-Chao Chen Chih-Yuan Lu Technology Development Center Advanced Module Process Development Division Macronix International Company Limited Hsinchu Taiwan

This investigation employs an optimized method to alleviate defects occurring at BF 2 + implanted source/drain areas, some white spots defects found at scribes lines after BPSG (boron and phosphorus doped silicon glass) anneal. The results of physical failure analysis indicate the white spot defects are relative to outgassed fluorine that can't be released out during BPSG thermal annealing. Various approaches which includes changing the stress of post cap layer, lowering down the BF 2 + implant doping concentration, and optimizing the ramp-up speed of post-annealing are all able to alleviate the generation of white spot defects. The optimized process with an additional RTP (rapid thermal annealing) right after BF 2 + implantation delivers 7% yield improvement.

关键词： Implants Annealing Films Delamination Doping Furnaces Silicon

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Robust shallow trench isolation technique used for 75nm nor flash memory

Robust shallow trench isolation technique used for 75nm nor ...

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IEEE/SEMI Conference and Workshop on advanced Semiconductor Manufacturing

作者： Jeng-Hwa Liao Kuo-Liang Wei Hong-Ji Lee Chun-Min Cheng Chun-Ling Chiang Jung-Yu Hsieh Ling-Wu Yang Tahone Yang Kuang-Chao Chen Chih-Yuan Lu Technology Development Center Advanced Module Process Development Division Macronix International Company Limited Hsinchu Taiwan

We have developed a new Self-aligned poly (SAP) process to improve the tunnel oxide integrity by optimizing the shallow trench isolation (STI) corner rounding profile and reducing the local oxide thinning effect. It is found that double in-situ steam generation (ISSG) liner oxides can effectively improve the STI corner rounding. As for the local oxide thinning effect, the composite pad dielectrics (C-Pad) composed of SiO 2 /poly-Si are good to prevent local thinning of tunnel oxide at STI corner. Moreover, using ISSG tunnel oxide can further reduce the local oxide thinning effect. Excellent breakdown characteristics of tunnel oxide by optimizing the key technologies have been verified in this work.

关键词： Furnaces Oxidation Electric breakdown Silicon compounds Reliability Flash memory Dielectrics

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Copper - top interconnect reliability for mixed signal applications

Copper - top interconnect reliability for mixed signal appli...

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IEEE International Workshop Integrated Reliability

作者： Jonggook Kim Barry O'Connell W. K. Teng Mark W. Poulter Advanced Process Technology Development National Semiconductor Corporation Santa Clara CA USA

The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.

关键词： Oxidation Copper Temperature dependence Reliability Thermal resistance

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Reduction of shorts between word lines on charge-trapping flash cell in a self-aligned double patterning technology

Reduction of shorts between word lines on charge-trapping fl...

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IEEE/SEMI Conference and Workshop on advanced Semiconductor Manufacturing

作者： Hong-Ji Lee Kuo-Liang Wei Nan-Tzu Lian Tahone Yang Kuang-Chao Chen Chih-Yuan Lu Technology Development Center Advanced Module Process Development Division Macronix International Company Limited Hsinchu Taiwan

This paper presents a unique gate structure for reducing shorts between word lines on charge-trapping flash cell memory. In the early stage of developing sub-45 nm half-pitch word line by a self-aligned double patterning (SADP) technology, the cell array suffered from abnormal intrinsic word line-to-word line shorts, ca. 96.3% of the bridge rate on the 72 Mb cell memory, due to the formation of polysilicon residues called stringers. The increase of polysilicon over-etching to eliminate stringers involves a trade-off between the removal efficiency of stringers and the feature size maintenance. Hence, a novel bottle-shaped gate profile was tailor-made and studied. As a result, the bridge rates are dramatically suppressed to 0%~10% on the low-density flash cells and ca. 22% in average on the high-density 512 Mb flash cell memory. The novel bottle-shaped gate structure is successfully implemented in advanced charge-trapping flash memory development.

关键词： Logic gates Bridges Flash memory Arrays Etching Films Resists

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Carbon incorporation into substitutional silicon site by carbon cryo ion implantation and metastable recrystallization annealing as stress technique in n-metal-oxide-semiconductor field-effect transistor

Carbon incorporation into substitutional silicon site by car...

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International Workshop on Junction technology

作者： Hiroshi Itokawa Kiyotaka Miyano Yusuke Oshiki Hiroyuki Onoda Masahito Nishigoori Ichiro Mizushima Kyoichi Suguro Advanced Unit Process Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Yokohama Japan System LSI Division Semiconductor Company Toshiba Corporation Yokohama Japan

ISBN: (纸本)9781424458660;9781424458691

Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and drain (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistors (nMOSFETs). In this research, C ion cryo implantation and a metastable recrystallization schemes employed to achieve strained Si:C layers with a high substitutionally incorporated carbon concentration ([C] sub ) at a high ratio of substitution, and a high doping activation were studied. we proposed the C cryo implantation for reduced implantation damage, the fast recrystallization by nonmelt laser annealing combined with solid phase epitaxy (SPE) annealing that promote Si regrowth in a high-C-concentration region, and the co-incorporation of phosphorus (P). These processes promoted markedly the recrystallization of C densely incorporated in an amorphous Si layer and realized e-Si:C S/D with high-crystallinity of strained Si:C layer while maintaining a high [C] sub at a high ratio of substitution with a high doping activation.

关键词： Silicon Ion implantation Metastasis Annealing Tensile stress Doping Lattices Electron mobility FETs MOSFETs

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Virtual Design of the Shaving Cap ECM process by Multiphysics Simulation Approach

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第十六届国际电加工会议

作者： P.T.Pajak R.van Tijum H.Altena C.R.Visser Philips Consumer Lifestyle Manufacturing Process Development-ShaversDrachtenthe Netherlands Philips Consumer Lifestyle Advanced Technology Drachtenthe Netherlands

ISBN: (纸本)9787313056306

The Philips electric shaver is a successful product that has been on the market for over 70 *** of the key components of the shaver is a shaving *** final shape of this product is achieved using Electro Chemical Machining(ECM).This paper discusses multi-physics ECM process simulation enabling virtual process development and reduction of the innovation lead *** cases concern removal of shape *** simulation is validated by the experiments;the final shape accuracy and selected process variables are measured and compared to the simulation results.

关键词： Electrochemical Machining Simulation Multiphysics

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Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS

Palladium incorporated nickel silicide for a cost effective ...

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2010 International Symposium on VLSI technology, System and Application, VLSI-TSA 2010

作者： Nishi, Yoshifumi Sonehara, Takeshi Hokazono, Akira Kawanaka, Shigeru Inaba, Satoshi Kinoshita, Atsuhiro Advanced LSI Technology Laboratory Corporate R and D Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Center for Semiconductor Research and Development Toshiba Corporation Semiconductor Company 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Device and Process Development Center Corporate R and D Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9781424450633

Incorporation of platinum (Pt) into nickel silicide (NiSi) improves the reliability and thermal stability of electrodes in Si MOSFETs [1]. Increasing the Pt content is desirable for further scaled CMOS [2], but incorporation of more Pt would tremendously increase the material cost. In addition, since Pt is one of the key materials for eco-technology such as catalyst for exhaust absorption and so on, reduction of the use of Pt whose amount is limited is essential for ecology. Recently palladium (Pd), which has similar chemical properties to those of Pt, has been attracting interest as a substitute of Pt. Several works have pointed out that NiPdSi bulk film has superior thermal stability to NiSi [3-6]. However, its potentiality in fully integrated CMOS devices has not been studied yet. In this work, we investigate the detailed properties of NiPdSi on fully integrated CMOS structures fabricated with the advanced process technology as a candidate of the alternative silicide material for NiPtSi. © 2010 IEEE.

关键词： Platinum

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Life cycle strain mapping of composite airframe structures for health monitoring by using FBG sensors

Life cycle strain mapping of composite airframe structures f...

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作者： Takahashi, Ichiya Sekine, Kazushi Takeya, Hajime Iwahori, Yutaka Minakuchi, Shu Takeda, Nobuo Koshioka, Yasuhiro Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Hommachi Amagasaki Hyogo 661-8661 Japan Advanced Composite Group Aerospace Research and Development Directorate Japan Aerospace Exploration Agency 6-13-1 Osawa Mitaka Tokyo 181-0015 Japan Graduate School of Frontier Sciences University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan Materials Process Technology Center 3-5-8 Shibakoen Minato-ku Tokyo 105-0011 Japan

ISBN: (纸本)9781934551080

The purpose of this research is to develop structural health monitoring technology based on the strain mapping of composite airframe structures through their life cycles. We conducted the evaluation tests for damage detection in CFRP pressure bulkheads using FBG sensors and verified the damage detection ability and accuracy of FBG sensors on various modes of damages and deformation. As a result, damages and deformation can be detected as the changes in strain distribution measured by FBG sensors. Moreover, these changes agree well with numerical simulation. These results demonstrate that the strain mapping by FBG sensors can be used for damage detection of the CFRP pressure bulkhead.

关键词： Damage detection

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Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS

Palladium incorporated nickel silicide for a cost effective ...

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International Symposium on VLSI technology, Systems and Applications

作者： Yoshifumi Nishi Takeshi Sonehara Akira Hokazono Shigeru Kawanaka Satoshi Inaba Atsuhiro Kinoshita Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation Japan Center for Semiconductor Research and Development Toshiba Corporation Semiconductor Company Japan Device and Process Development Center Corporate R&D Center Toshiba Corporation Yokohama Japan

Incorporation of platinum (Pt) into nickel silicide (NiSi) improves the reliability and thermal stability of electrodes in Si MOSFETs. Increasing the Pt content is desirable for further scaled CMOS, but incorporation of more Pt would tremendously increase the material cost. In addition, since Pt is one of the key materials for eco-technology such as catalyst for exhaust absorption and so on, reduction of the use of Pt whose amount is limited is essential for ecology. Recently palladium (Pd), which has similar chemical properties to those of Pt, has been attracting interest as a substitute of Pt. Several works have pointed out that NiPdSi bulk film has superior thermal stability to NiSi. However, its potentiality in fully integrated CMOS devices has not been studied yet. In this work, we investigate the detailed properties of NiPdSi on fully integrated CMOS structures fabricated with the advanced process technology as a candidate of the alternative silicide material for NiPtSi.

关键词： CMOS technology Palladium Nickel Silicides Costs Thermal stability Platinum Electrodes MOSFETs Absorption

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