检索结果-内蒙古大学图书馆

Symposium on VLSI technology

作者： M. Goto K. Tatsumura S. Kawanaka K. Nakajima R. Ichihara Y. Yoshimizu H. Onoda K. Nagatomo T. Sasaki T. Fukushima A. Nomachi S. Inumiya H. Oguma K. Miyashita H. Harakawa S. Inaba T. Ishida A. Azuma T. Aoyama M. Koyama K. Eguchi Y. Toyoshima Center for Semiconductor Research and Development Toshiba Corporation Yokohama Kanagawa Japan Advanced LSI Technology Laboratory Corporate Research & Development Center Toshiba Corporation Yokohama Kanagawa Japan Process and Manufacturing Engineering Center Toshiba Corporation Yokohama Kanagawa Japan System LSI Division Semiconductor Company Toshiba Corporation Yokohama Kanagawa Japan

ISBN: (纸本)9781424418022

We report TaC x /HfSiON gate stack CMOS device with simplified gate 1 st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaC x composition, fixed charge free TaC x /HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and strained Contact Etch Stop Layer (CESL), L g = 35 nm high performance TaC x /HfSiON devices is achieved.

关键词： Logic gates Performance evaluation Silicon Strain Metals Dielectrics Materials

来源：评论

学校读者我要写书评

暂无评论

Impact of tantalum composition in TaC/HfSiON gate stack on device performance of aggressively scaled CMOS devices with SMT and strained CESL

Impact of tantalum composition in TaC/HfSiON gate stack on d...

引用

2008 Symposium on VLSI technology Digest of Technical Papers, VLSIT

作者： Goto, M. Tatsumura, K. Kawanaka, S. Nakajima, K. Ichihara, R. Yoshimizu, Y. Onoda, H. Nagatomo, K. Sasaki, T. Fukushima, T. Nomachi, A. Inumiya, S. Oguma, H. Miyashita, K. Harakawa, H. Inaba, S. Ishida, T. Azuma, A. Aoyama, T. Koyama, M. Eguchi, K. Toyoshima, Y. Center for Semiconductor Research and Development Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan Advanced LSI Technology Laboratory Corporate R and D Center Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan Process and Manufacturing Engineering Center Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan System LSI Division Semiconductor Company Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama Kanagawa 235-8522 Japan

ISBN: (纸本)9781424418053

We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaCx composition, fixed charge free TaCx/HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and strained Contact Etch Stop Layer (CESL), L g=35nm high performance TaCx/HfSiON devices is achieved. © 2008 IEEE.

关键词： Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

Copper Line Resistance Control and Reliability Improvement by Surface Nitridation of Ti barrier Metal

Copper Line Resistance Control and Reliability Improvement b...

引用

IEEE International Conference on Interconnect technology

作者： A. Sakata S. Kato Y. Yano H. Toyoda T. Kawanoue M. Hatano J. Wada N. Yamada T. Oki H. Yamaguchi N. Nakamura K. Higashi M. Yamada T. Fujimaki M. Hasunuma Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Yokohama Kanagawa Japan Semiconductor Analysis and Evaluation Center Toshiba Nanoanalysis Corpration Yokohama Kanagawa Japan Advanced CMOS Technology Department SoC Research & Development Center Semiconductor Company Toshiba Corporation Yokohama Kanagawa Japan System LSI Division I Semiconductor Company Toshiba Corporation Yokohama Kanagawa Japan

This paper proposes highly reliable, low resistance and cost effective Cu interconnect system for 45nm CMOS device and beyond. Overhang formation and Cu line resistance increase by deposition process variation are serious problems for titanium (Ti) barrier metal (BM). Overhang reduction by surface nitridation of Ti BM has been successfully demonstrated. It has been clarified that Cu resistivity increase with Ti BM is due to insufficient Cu grain growth, not reaction between Ti and Cu. Surface nitridation contributes to Cu line resistance reduction by changing grain growth behavior. Moreover, it also improves oxidation endurance of the BM caused by absorbed moisture from porous low-k ILD. It is concluded that surface nitridation of Ti BM is promising approach as Cu barrier metal for 45nm device and beyond to fabricate Cu interconnect with controlled resistance and high reliability.

关键词： Surface resistance Copper Electrical resistance measurement Conductivity Moisture Grain boundaries Filling Testing Semiconductor device reliability CMOS process

来源：评论

学校读者我要写书评

暂无评论

Chemical controllability of charge states of nitrogen-related defects in HfOxNy: First-principles calculations

引用

Physical Review B 2008年第16期77卷 165130-165130页

作者： N. Umezawa K. Shiraishi Y. Akasaka A. Oshiyama S. Inumiya S. Miyazaki K. Ohmori T. Chikyow T. Ohno K. Yamabe Y. Nara K. Yamada Advanced Electronic Materials Center National Institute for Materials Science Tsukuba 305-0044 Japan Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba 305-8571 Japan Leading Edge Process Development Center Tokyo Electron Ltd. Yamanashi 407-0912 Japan Department of Applied Physics University of Tokyo Tokyo 113-8656 Japan Semiconductor Company Toshiba Corporation Yokohama 235-8522 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Hiroshima 739-8530 Japan Nanotechnology Research Laboratories Waseda University Tokyo 169-0041 Japan Computational Materials Science Center National Institute for Materials Science Tsukuba 305-0047 Japan Semiconductor Leading Edge Technology Inc. Tsukuba 305-8569 Japan

Relative stabilities of nitrogen-related defects in HfOxNy have been extensively studied in terms of formation energies by using first-principles calculations. We have found that the two oxygen vacancies coupled with two substitutional nitrogen atoms at oxygen sites is the predominant defect in a low oxygen chemical potential (μO) with doubly positive [(NO)2(VO)2]+2 and neutral [(NO)2(VO)2]0 forms for the p-type and n-type silicon substrates, respectively. On the other hand, the negatively charged substitutional nitrogen [(NO)2]−2 predominates in a higher μO condition. A neutral defect, [(NO)2VO]0, is found to be stabilized in the midregion of μO, which indicates that the oxygen partial pressure is an important factor to control fixed charges that cause malfunction in HfOxNy-based devices. An electron counting concept is shown to be valid to predict the stable forms of the defects.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Safe operating area from self-heating, impact ionization, and hot carrier reliability for a SiGe HBT on SOI

Safe operating area from self-heating, impact ionization, an...

引用

2007 IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM

作者： Kim, Jonggook Sadovnikov, Alexei Chen, Tianbing Babcock, Jeff Advanced Process Technology Development National Semiconductor Corp. 2900 Semiconductor Drive Santa Clara CA 95052-8090

ISBN: (纸本)9781424410194

A unified electro-thermal safe operating area (SOA) expression is proposed in this paper to evaluate self heating, impact ionization, and Hot Carrier (HC) degradation effects simultaneously in a full range of bipolar transistor operation. This SOA is demonstrated by-experiments for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) by extracting principle parameters from discrete transistors and current mirrors, Also, time dependent reliability tests have been fulfilled for several meaningful bias points within this SOA at the fixed VEE and VCE. Avalanche induced HC injection was another important factor to restrict device performance. Finally, the modified electro-thermal SOA by HC reliability is suggested here. © 2007 IEEE.

关键词： Heterojunction bipolar transistors

来源：评论

学校读者我要写书评

暂无评论

Control of pulverized coal oxy-combustion systems

Control of pulverized coal oxy-combustion systems

引用

17th Annual Joint ISA POWID/EPRI Controls and Instrumentation Conference and 50th Annual ISA POWID Symposium 2007

作者： McDonald, Denny K. Zadiraka, Allan J. Technology Group Advanced Technology Development and Design Babcock and Wilcox Company Barberton OH 44203 United States Technology Group Power and Process Control Babcock and Wilcox Company Barberton OH 44203 United States

ISBN: (纸本)9781604233292

With the vast reserves of coal that exist in the world, coal will continue to be a prime source for electricity generation for the foreseeable future. However, fossil fuel combustion is a major contributor to the greenhouse gas emissions which is of increasing concern. Continued use of fossil fuels for electrical generation will require reduction of these emissions. While part of this reduction will be achieved through more efficient power plants that reduce the emissions per unit of electricity produced, capture and use or sequestration of CO2 emissions from utility boilers appears to be required to achieve the targeted reductions. A potentially more efficient and less costly alternative to Integrated Gasification Combined Cycle (IGCC) plants under development for this purpose is Oxy-coal combustion. In this concept, oxygen mixed with recycled flue gas replaces the normal combustion air resulting in a flue gas that consists primarily of CO2. The concentrated CO 2 stream reduces the cost and energy requirements needed for its capture and sequestration. The control of the oxygen to the combustion process, recycled flue gas flow, and impact on other processes such as heat transfer in the boiler and gas stream constituents offers a unique set of control requirements which will be discussed. Copyright 2007 ISA. All Rights Reserved.

关键词： Flue gases

来源：评论

学校读者我要写书评

暂无评论

advanced silicon technologies for wireless communications

Advanced silicon technologies for wireless communications

引用

Ph.D. Research in Microelectronics and Electronics (PRIME)

作者： Pascal Chevalier Bertrand Szelag Laurence Boissonnet Sebastien Cremer Alain Chantre Eric Granger STMicroelectronics FTM-Advanced Research and Development-Analog and RF Process Technology Development Crolles France

We present in this paper an overview of RF, Analog & Mixed Signal devices used in wireless communications. Emphasis is put on active and passive devices for RF, power and millimeter-wave applications. Performances... 详细信息

关键词： Silicon Communications technology Wireless communication CMOS technology Radio frequency Cellular phones Mobile communication Transceivers BiCMOS integrated circuits RF signals

来源：评论

学校读者我要写书评

暂无评论

Reaction mechanism and microkinetic model for the binary catalyst combination of In/ZSM-5 and Pt/Al₂O₃ for NO_x reduction by methane under lean conditions (vol 46, pg 2719, 2007

引用

INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH 2007年第13期46卷 4726-4726页

作者： Maunula, Teuvo Ahola, Juha Hamada, Hideaki Catalyst Development Typpitie 1 Ecocat Oy FI-90650 Oulu Finland Department of Process and Environmental Engineering University of Oulu Linnanmaa FI-90014 Oulu Finland and National Institute of Advanced Industrial Science and Technology Tsukuba Central 5 1-1-1 Higashi Tsukuba Ibaraki 305-8565 Japan

A significantly enhanced activity in NOxreduction by methane was observed when a small amount (5 wt %) of Pt/Al2O3or Mn3O4was mechanically mixed with In/ZSM-5 in both dry and wet lean conditions. The highest NO conversions to nitrogen were over 98% with these novel multifunctional catalysts at 500 °C in dry conditions. The same activity was not reached with bimetallic Pt−In/ZSM-5, which showed the benefit of macroscale separation of active compounds (In separated from Pt or Mn3O4) in CH4-SCR. Neither Pd/Al2O3nor Ir/Al2O3was able to promote NOxreduction as a mechanical mixture with In/ZSM-5. Based on the surface intermediate (FTIR) and kinetic studies, a reaction mechanism on the binary combination of In/ZSM-5 and Pt/Al2O3was defined. The presence of NO2enhanced the formation of partially oxidized, nitrogen-free, and nitrogen-containing methane derivates. In the key reaction, the adsorbed NH2(amine) and NO form N2on In/ZSM-5. Pt/Al2O3enhanced NO2formation, methane oxidation, CO oxidation, and surprisingly the reduction step to nitrogen. The increased formation of N2O in two-component reactors revealed that N2was formed on In/ZSM-5 by HC-SCR reactions but also on Pt/Al2O3by NO decomposition. The microkinetic model, based on defined surface reactions on separated indium and platinum sites on different supports, was able to predict all observed reactant and product concentrations in steady-state CH4-SCR.

关键词： Redox reactions Hydrocarbons Platinum Catalysts Nitrogen

来源：评论

学校读者我要写书评

暂无评论

Safe Operating Area from Self-Heating, Impact Ionization, and Hot Carrier Reliability for a SiGe HBT on SOI

Safe Operating Area from Self-Heating, Impact Ionization, an...

引用

Bipolar/BiCMOS Circuits and technology Meeting

作者： Jonggook Kim Alexei Sadovnikov Tianbing Chen Jeff Babcock Advanced Process Technology Development National Semiconductor Corporation Santa Clara CA USA

ISBN: (纸本)9781424410187;1424410185

A unified electro-thermal safe operating area (SOA) expression is proposed in this paper to evaluate self heating, impact ionization, and hot carrier (HC) degradation effects simultaneously in a full range of bipolar transistor operation. This SOA is demonstrated by experiments for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) by extracting principle parameters from discrete transistors and current mirrors. Also, time dependent reliability tests have been fulfilled for several meaningful bias points within this SOA at the fixed V BE and V CE . Avalanche induced HC injection was another important factor to restrict device performance. Finally, the modified electro-thermal SOA by HC reliability is suggested here.

关键词： Impact ionization Hot carriers Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Semiconductor optical amplifiers Silicon on insulator technology Bipolar transistors Heating Degradation

来源：评论

学校读者我要写书评

暂无评论

X-ray photoelectron spectroscopic study of nitrogen depth profile in radical nitrided silicon oxynitride film

Shinku/Journal of the Vacuum Society of Japan

引用

Shinku/Journal of the Vacuum Society of Japan 2007年第11期50卷 672-677页

作者： Kawase, Kazumasa Umeda, Hiroshi Inoue, Masao Suwa, Tomoyuki Teramoto, Akinobu Hattori, Takeo Ohmi, Tadahiro Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Honmachi Amagasaki Hyogo 661-8661 Japan Process Development Department Production and Technology Unit RENESAS Technology Corporation 4-1 Mizuhara Itami Hyogo 664-0005 Japan New Industry Creation Hatchery Center Tohoku University 6-6-10 Aoba Aramaki Aoba-ku Sendai 980-8579 Japan

The intensities of emission from N2+ and NH radicals in Ar/N2, Xe/N2 Ar/NH3 or Xe/NH3 plasma excited by microwave and the chemical bonding states of nitrogen atoms in silicon oxynitride film nitrided by using these plasmas were investigated. Depth profiles of composition and chemical structures in the oxynitride films were investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The emission intensities from N2+ radical generated in Xe/N2, Ar/NH3 or Xe/NH3 plasma are less than a quarter of that from N2+ radical generated in Ar/N2 plasma. The emission from NH radical detected in Ar/NH 3 or Xe/NH3 plasma is not detected in Xe/N2 or Ar/N2 plasma. The order of the nitrogen concentration near the film/substrate interface is Ar/NH3 > Xe/NH3 > Ar/N2 > Xe/N2 plasma. Therefore, it is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N2 plasma in which both of the generation efficiencies of N2+ and NH radicals are low.

关键词： Nitrogen compounds

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：