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检索条件"机构=Advanced Process and Technology Development"
362 条 记 录,以下是241-250 订阅
排序:
Plasma Arc Waste Destruction System (PAWDS) a novel approach to waste elimination aboard ships
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NAVAL ENGINEERS JOURNAL 2006年 第3期118卷 139-150页
作者: Kaldas, Aida Picard, Isabelle Chronopoulos, Christos Chevalier, Philippe Carabin, Pierre Holcroft, Gillian Alexander, Gary Spezio, Joseph Mann, Jim Molintas, Henry AIDA KALDAS Eng. is the principal author and Technical Manager at PyroGenesis Inc. She is currently leading the process development team of the Plasma Arc Waste Destruction System for applications on board ships. She holds a Bachelor in Chemical Engineering from Cairo University and a Masters in Engineering Science from the University of Western Ontario. She is a member of “l'Ordre des Ingénieurs du Québec” since 1981. Prior to joining PyroGenesis Inc. Mrs. Kaldas has led several development programs working for Orica (formally ICI Explosives)for over 20 years. Her areas of expertise include process optimization and debottlenecking process modeling and particles processing. ISABELLE PICARD ENG. is a Product Development Engineer at PyroGenesis Inc. She is currently part of the process development team of the Plasma Arc Waste Destruction System for applications on board ships. She holds a Bachelor in Chemical Engineering from “école Polytechnique de Montréal”. She is a member of “l'Ordre des Ingénieurs du Québec” since 1995. Prior to joining PyroGenesis Inc. Mrs. Picard has worked as project leader for several development project related to natural gas applications working for The Natural Gas Technologies Center and as Product Development Engineer for the fuel cell industry working for H Power Canada inc. Her areas of expertise include process development and optimization system integration and equipment sizing. CHRISTOS CHRONOPOULOS Eng. is presently a Product Development Engineer at PyroGenesis Inc. Over the last two years Mr. Chronopoulos has worked on the design and development processes for the treatment of all types of wastes. Prior to joining PyroGenesis Inc. Mr. Chronopoulos worked on process engineering and process development in the Fuel Cell industry for a period of two years and also in the Electronic Plating industry for 4 years. He holds a Bachelor's degree in Chemical Engineering from Sherbrooke University. He is a member of “l'Ordre des Ingénieurs du Québec”. PHILIPPE CHEVALIER Eng. is the
The Plasma Arc Waste Destruction System (PAWDS) uses plasma energy, with temperatures over 5,000 degrees C, to rapidly and efficiently destroy combustible waste aboard ships. PAWDS has proven itself to be a viable alt... 详细信息
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Research on advanced diesel aftertreatment devices
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Review of Automotive Engineering 2006年 第3期27卷 395-399页
作者: Hara, Shinji Oyama, Koji Kakegawa, Toshiaki Senbokuya, Shigeo Nakamura, Qsamu Shibuya, Masahiko Itoyama, Hiroyuki Okada, Masanori Sugiyama, Gen Hasegawa, Tsutomu Group No. 5 Engine Component Dept. No. 2 Isuzu Motors Limited 8 Tsuchidana Fujisawa Kanagawa 252-8501 Japan Fuel Products R and D Group Fuel Research Laboratory Research and Development Division 8 Chidoricho Naka-ku Yokohama Kanagawa 231-0815 Japan Technical Liaison Dept. Development Management Division Hino Motors Ltd. 3-1-1 Hino-dai Hino Tokyo 191-8660 Japan Fuel Quality Technology Section Manufacturing Department Idemitsu Kosan Co. Ltd. 1280 Kami-humi Sodegaura Chiba 299-0293 Japan Fuels and Process Division Research Center TonenGeneral Sekiyu K.K. 6-1 Ukishima-cho Kawasaki-ku Kawasaki Kanagawa 210-9526 Japan Oil Products Development Section Research and Development Division Showa Shell Sekiyu K.K. 2-3-2 Daiba Minato-ku Tokyo 135-8074 Japan Components Engineering Group Engine Engineering Department No. 3 Powertrain Engineering Division 6-1 Daikoku-cho Tsurumi-ku Yokohama Kanagawa 230-0053 Japan Quality Audit Department Engine Administration Division Power Train Development Group 1 Toyota-cho Toyota Aicht 471-8572 Japan Engine and Environmental Research Division Japan Automobile Research Institute 2530 Karima Tsukuba Ibaraki 305-0822 Japan Fuel Research Laboratory Advanced Technology and Research Institute Japan Petroleum Energy Center 1-4-10 Ohnodai Midori-ku Chiba Chiba 267-0056 Japan
This article reports the effects of fuel sulfur on advanced diesel emission aftertreatment devices as tested by the JCAPII Diesel WG For a Urea SCR system, the NOx emissions reduction performance was compared at low e... 详细信息
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BEOL process integration technology for 45nm node porous low-k/copper interconnects
BEOL process integration technology for 45nm node porous low...
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IEEE International Interconnecttechnology Conference 2005
作者: Matsunaga, N Nakamura, N Higashi, K Yamaguchi, H Watanabe, T Akiyama, K Nakao, S Fujita, K Miyajima, H Omoto, S Sakata, A Katata, T Kagawa, Y Kawashima, H Enomoto, Y Hasegawa, T Shibata, H Advanced CMOS Technology Department SoC R and D Center Semiconductor Company Japan Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Japan Semiconductor Technology Development Group Semiconductor Solutions Network Company Sony Corporation Japan
Highly reliable BEOL integration technology with porous low-k (k=2.3) was realized by development focusing on plasma damage control and moisture control. A hybrid dielectric scheme with damage resistant porous low-k f... 详细信息
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Data retention behavior in the Embedded SONOS Nonvolatile Memory Cell
Data retention behavior in the Embedded SONOS Nonvolatile Me...
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63rd Device Research Conference, DRC'05
作者: Chae, H.S. Jung, Y.S. Seo, S. Han, J.H. Hyun, J.W. Park, G.W. Um, M.Y. Kim, J.-H. Lee, B.J. Kim, K.C. Cho, I.W. Bae, G.J. Lee, N.I. Kang, S.T. Kim, C.W. Devices Lab Samsung Advanced Institute of Technology San 14 Nongseo-ri Kihung-up Yongin-si Kyungki-do Korea Republic of Advanced Process Development Team System LSI Business Samsung Electronics Co. Ltd.
Data retention loss mechanisms in an embedded SONOS memory cell using hot electron programming and hot hole erase are investigated for the first time. After program and erase cycling stress, a reduction in "on&qu... 详细信息
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A highly manufacturable MIPS (Metal Inserted Poly-Si Stack) technology with novel threshold voltage control
A highly manufacturable MIPS (Metal Inserted Poly-Si Stack) ...
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2005 Symposium on VLSI technology
作者: Jung, Hyung-Suk Lee, Jong-Ho Han, Sung Kee Kim, Yun-Seok Lim, Ha Jin Kim, Min Joo Doh, Seok Joo Yu, Mi Young Lee, Nae-In Lee, Hye-Lan Jeon, Taek-Soo Cho, Hag-Ju Kang, Sang Bom Kim, Sang Yong Park, Im Soo Kim, Dongchan Baik, Hion Suck Chung, Young Su Advanced Process Development Team System LSI Division Samsung Electronics Co. Ltd. San#24 Nongseo-Ri Kiheng-Eup Yongin-City Kyunggi-Do Korea Republic of Process Development Team Semiconductor RandD Center Samsung Electronics Co. Ltd. Kyunggi-Do Korea Republic of AE Center Samsung Advanced Institute of Technology Kyunggi-Do Korea Republic of
The novel technique to control the Vth of n/pMOS for HfSiO(N) in both poly-Si and MIPS (Metal Inserted Poly-Si Stack) gates is demonstrated. By adding AlOx on HfSiO prior to poly-Si deposition, we successfully achieve... 详细信息
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Evaluation of adhesion and barrier properties for CVD-TaN on dual damascene copper interconnects
Evaluation of adhesion and barrier properties for CVD-TaN on...
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IEEE 2005 International Interconnect technology Conference, IITC
作者: Hong, Jong Won Lee, Jong Myeong Choi, Kyung In Chung, Youngsu Lee, Sang Woo Choi, Gil Heyun Kim, Sung Tae Chung, U-In Moon, Joo Tae Ryu, Byung-Il Process Development Team Semiconductor R and D Center Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Yongin-City Kyungki-Do 449-711 Korea Republic of Samsung Advanced Institute of Technology
CVD-TaN thin films derived from a new noble precursor, tert- amylimidotrisdim- ethylamidotantalum (TAIMATA), for the diffusion barrier in Cu interconnects were studied. The effects of CVD-TaN on dual damascene interco... 详细信息
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Negative bias temperature instability of carrier-transport enhanced pMOSFET with performance boosters
Negative bias temperature instability of carrier-transport e...
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IEEE International Electron Devices Meeting, 2005 IEDM
作者: Rhee, Hwa Sung Lee, Ho Ueno, Tetsuji Shin, Dong Suk Lee, Seung Hwan Kim, Yihwan Samoilov, A. Hansson, Per-Ove Kim, Min Kim, Hyong Soo Lee, Nae-In Advanced Technology Development Team San #24 Nongseo-Ri Kiheung-Eup Yongin-City Kyunggi-Do 449-900 Korea Republic of Process Development Team Samsung Electronics Co. Ltd. Sunnyvale CA United States Applied Materials Sunnyvale CA United States
The effects of mobility boosters such as straining technologies and modified transport direction emerging for 65nm pFET and beyond on negative bias temperature instability (NBTI) have been investigated. Although compr... 详细信息
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Data retention behavior in the embedded SONOS nonvolatile memory cell
Data retention behavior in the embedded SONOS nonvolatile me...
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Device Research Conference
作者: H.S. Chae Y.S. Jung S. Seo J.H. Han J.W. Hyun G.W. Park M.Y. Um J.-H. Kim B.J. Lee KC. Kim I.W. Cho G.J. Bae N.I. Lee S.T. Kang C.W. Kim Devices lab Samsung Advanced Institute of Technology Kihung-up Yongin-si Kyungki-do KOREA Advanced Process Development Team Samsung Electronics Co. Ltd Russia Advanced Process Development Team Samsung Electronics Co. Ltd
In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined tha... 详细信息
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S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond
S-RCAT (sphere-shaped-recess-channel-array transistor) techn...
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Symposium on VLSI technology
作者: J.V. Kim H.J. Oh D.S. Woo Y.S. Lee D.H. Kim S.E. Kim G.W. Ha H.J. Kim N.J. Kang J.M. Park Y.S. Hwang D.I. Kim B.J. Park M. Huh B.H. Lee S.B. Kim M.H. Cho M.Y. Jung Y.I. Kim C. Jin D.W. Shin M.S. Shim C.S. Lee W.S. Lee J.C. Park G.Y. Jin Y.J. Park Kinam Kim Samsung Electronics Co. Yongin-City Kyunggi-Do KOREA Advanced Technology Development Semiconductor Research and Development Division CAE Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Semiconductor R&D Division CAE Advanced Technology Development Semiconductor Research and Development Division Process Technology Team Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Process Technology Team
For the first time, S-RCAT (sphere-shaped-recess-channel-array transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (recess-channe... 详细信息
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Prevention of Cu degradation using in situ N2 plasma treatment in a dual-damascene process
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Journal of Vacuum Science and technology B: Microelectronics and Nanometer Structures 2005年 第5期23卷 2084-2088页
作者: Tomohisa, Shingo Yoshikawa, Kazunori Yonekura, Kazumasa Sakamori, Shigenori Fujiwara, Nobuo Tsujimoto, Kazunori Nishioka, Kyusaku Kobayashi, Hiroshi Oomori, Tatsuo Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Honmachi Amagasaki Hyogo 661-8661 Japan Wafer Process Engineering Development Division Renesas Technology Corporation 4-1 Mizuhara Itami Hyogo 664-0005 Japan Semiconductor and Device Group Mitsubishi Electric Corporation 1-1-57 Miyashita Sagamihara Kanagawa 229-1195 Japan
The surface state of copper after an etching process using CF4 gas has been analyzed. Copper surface stability against corrosion is evaluated through a storage test performed under high-humidity conditions after the e... 详细信息
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