检索结果-内蒙古大学图书馆

4th Annual Emerging Technologies Conference, ISA EXPO 2004

作者： Burch, Randy Advanced Process Control Software Development Aspen Technology. Inc. Houston TX 77077

Implementation of a Distributed Control System (DCS) provides for significant regulatory control benefits through improved control capabilities, increased system reliability, and in reducing overall maintenance costs. The DCS control and economic benefits are commonly supplemented through commissioning of advanced control applications, model-based predictive controllers, unit optimization, and enterprise planning systems. With the benefits of these various advanced control implementations largely realized in many process plants and with growing pressures on profitability, however, companies are extremely focused on improving performance and optimizing their daily operations. This focus has resulted in a recent shift to emphasizing maintenance of existing applications to sustain economic benefits. This paper will present the benefits derived specifically from one of these maintenance efforts: monitoring and optimizing PID loop performance. Starting from a discussion of the case for investing in regulatory controls, the presentation will then define the challenges and opportunities related to loop maintenance, as well as the performance metrics required for successful optimization. A strategy for integrating long-term PID loop maintenance and performance software also includes process model identification, and loop simulation and tuning optimization to achieve desired control objectives. Copyright 2004 by ISA - The Instrumentation, Systems and Automation Society.

关键词： Three term control systems

来源：评论

学校读者我要写书评

暂无评论

The current mirror thermal characterization method and its implementation in a power SOI BJT process

The current mirror thermal characterization method and its i...

引用

Bipolar/BiCMOS Circuits and technology Meeting

作者： Jonggook Kim Yun Liu J.A. De Santis D. Brisbin Advanced Process Technology Development National Semiconductor Corporation

ISBN: (纸本)0780386183

A new current mirror method is described that can be used to evaluate thermal issues in silicon-on-insulator (SOI) bipolar junction transistors (BJTs). This method is compared to conventional transistor level techniques and is shown to significantly improve safe operating area (SOA) measurement sensitivity. Unlike conventional methods, the current mirror method can provide quantitative analysis of the BJT's thermal instability over a wide power range, even in the apparent SOA of the device. Also, this method can predict and evaluate SOA with respect to emitter ballast resistance and current crowding.

关键词： Mirrors Semiconductor optical amplifiers Thermal resistance Voltage control Current measurement Silicon on insulator technology Transistors Temperature Current density Area measurement

来源：评论

学校读者我要写书评

暂无评论

Novel ultra tough organic low-k dielectrics 2

Novel ultra tough organic low-k dielectrics

引用

2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004

作者： Aoi, Nobuo Fukuda, Takuya Yanazawa, Hiroshi Association of Super-Advanced Electronics Technologies Japan Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co. Ltd. Japan

ISBN: (纸本)0780384237

We have proposed an ultra tough low-k film with a low density and highly cross-linked structure realized by a co-polymerization of a 3-dimensional rigid monomer and a 2-dimensional rigid monomer with self-organized nanospace formation. This approach for syntheses of organic low-k materials promise some emerging ultra tough and ultra low-k organic dielectrics and a breakthrough for red brick wall against ITRS road map. © 2015 IEEE.

关键词： Monomers

来源：评论

学校读者我要写书评

暂无评论

Multi-site performance monitoring in batch pharmaceutical production 7th

Multi-site performance monitoring in batch pharmaceutical pr...

引用

7th International Symposium on advanced Control of Chemical processes, ADCHEM 2003

作者： Wong, C.W.L. Escott, R.E.A. Morris, A.J. Martin, E.B. Centre for Process Analytics and Control Technology School of Chemical Engineering and Advanced Materials University of Newcastle Newcastle upon TyneNE1 7RU United Kingdom GlaxoSmithKline Chemical Development Tonbridge United Kingdom

A challenge facing the pharmaceutical and chemical industries is how to understand and identify differences in process behaviour where a product is manufactured at two different sites. Three approaches based on multi-group principal component analysis are investigated and benchmarked against single site models. The multi-group approach is shown to remove differences between sites such as operational scale thereby enabling the analysis to focus on identifying differences in variation between the two sites that are not a consequence of process configurations. From the analysis it is observed that the multi-group approach can assist in the understanding of manufacturing performance. Copyright © IFAC 2003

关键词： Chemical industry

来源：评论

学校读者我要写书评

暂无评论

Influence of mobility model on extraction of stress dependent source-drain series resistance

引用

MICROELECTRONICS RELIABILITY 2004年第1期44卷 25-32页

作者： De Souza, MM Manhas, SK Sekhar, DC Oates, AS Chaparala, P Emerging Technologies Research Centre De Montfort University Gateway Street Leicester LE1 9BH UK TSMC 121 Park Ave 3 Science Based Industrial Park Hsinchu Taiwan Advanced Process Technology Development National Semiconductor Corp. 2900 Semiconductor Dr. M/S E-155 Santa Clara CA 95051 USA

The extraction of the parasitic source-drain series resistance after stress is a significant challenge, which has not been reported for channel lengths below 0.5 mum. Methods proposed until now yield a reducing series resistance behaviour for such channel lengths, contrary to expectation. We demonstrate that the underlying cause of this phenomenon is due to modification of mobility behaviour under stress. A new methodology for monitoring the time dependent progression of series resistance and mobility degradation for stress conditions varying from hot carriers to Negative Bias Temperature is proposed. A new threshold voltage model separating the effects of damaged and undamaged portions of a stressed device is also demonstrated. (C) 2003 Elsevier Ltd. All rights reserved.

关键词： MOSFET devices

来源：评论

学校读者我要写书评

暂无评论

The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs

The effects of TaN thickness and strained substrate on the p...

引用

International Electron Devices Meeting (IEDM)

作者： H.-J. Cho H.L. Lee S.G. Park H.B. Park T.S. Jeon B.J. Jin S.B. Kang S.G. Lee Y.P. Kim I.S. Jung J.W. Lee Y.G. Shin U.-I. Chung J.T. Moon J.H. Choi Y.S. Jeong Process Development Team Samsung Electronics Semiconductor Research and Development Center South Korea AE Center Samsung Advanced Institute of Technology Yongin si Kyunggi South Korea

The effects of TaN metal-gate thickness on the electrical characteristics of poly-Si/metal-gate/HfSiON MOSFETs have been investigated. Too thin TaN was reactive with poly-Si gate, which led to the formation of Si-doped metal gate. As a result, the work function of the metal gate was reduced and the capacitance increased while generating traps in HfSiON films. P-MOSFET using poly-Si/TaN gate with channel engineering in strained-Si substrate showed threshold voltage of - 0.45 V at W/L= 10/1 /spl mu/m and improved MOSFET characteristics.

关键词： MOSFETs Dielectric substrates Threshold voltage Annealing Electric variables Plasma temperature Boron High K dielectric materials High-K gate dielectrics Chemical vapor deposition

来源：评论

学校读者我要写书评

暂无评论

Novel ultra tough organic low-k dielectrics

Novel ultra tough organic low-k dielectrics

引用

International Meeting for Future of Electron Devices

作者： N. Aoi T. Fukuda H. Yanazawa ASET (Association of Super-Advanced Electronics Technologies) Japan Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Company Limited Japan

关键词： Polymer films Dielectric constant Orbital calculations Industrial electronics Dielectric materials Electronics industry Semiconductor materials Semiconductor films Finite element methods Capacitance

来源：评论

学校读者我要写书评

暂无评论

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

A mechanically enhanced storage node for virtually unlimited...

引用

International Electron Devices Meeting (IEDM)

作者： D.H. Kim J.Y. Kim M. Huh Y.S. Hwang J.M. Park D.H. Han D.I. Kim M.H. Cho B.H. Lee H.K. Hwang J.W. Song N.J. Kang G.W. Ha S.S. Song M.S. Shim S.E. Kim J.M. Kwon B.J. Park H.J. Oh H.J. Kim D.S. Woo M.Y. Jeong Y.I. Kim Y.S. Lee J.C. Shin J.W. Seo S.S. Jeong K.H. Yoon T.H. Ahn J.B. Lee Y.W. Hyung S.J. Park H.S. Kim W.T. Choi G.Y. Jin Y.G. Park Kinam Kim Advanced Technology Development Team Process Technology Team Semiconductor R&D Div Samsung Electronics Co Kiheung-Eup Yongin-City Kyunggi-Do Korea

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si/sub 3/N/sub 4/, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

关键词： Capacitors Random access memory Tin Capacitance Dielectric materials Bridge circuits Glass Strips Manufacturing processes Semiconductor device manufacture

来源：评论

学校读者我要写书评

暂无评论

Multi-Site Performance Monitoring in Batch Pharmaceutical Production

引用

IFAC Proceedings Volumes 2004年第1期37卷 683-689页

作者： C.W.L. Wong A.J. Morris E.B. Martin R.E.A. Escott Centre for Process Analytics and Control Technology School of Chemical Engineering and Advanced Materials University of Newcastle Newcastle upon Tyne NE1 7RU UK GlaxoSmithKline Chemical Development

关键词： Biotechnology Manufacturing processes Performance Monitoring Statistical Analysis

来源：评论

学校读者我要写书评

暂无评论

Highly manufacturable high density phase change memory of 64Mb and beyond

Highly manufacturable high density phase change memory of 64...

引用

International Electron Devices Meeting (IEDM)

作者： S.J. Ahn Y.J. Song C.W. Jeong J.M. Shin Y. Fai Y.N. Hwang S.H. Lee K.C. Ryoo S.Y. Lee J.H. Park H. Horii Y.H. Ha J.H. Yi B.J. Kuh G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim B.I. Ryu Advanced Technology Development Samsung Electronics Company Limited Yongin si Kyunggi South Korea Process Development Semiconductor Research and Development Div Samsung Electronics Company Limited Yongin si Kyunggi South Korea

Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6 mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new nonvolatile memory markets.

关键词： Phase change memory Phase change random access memory Manufacturing processes Tellurium Etching Writing Flash memory Testing Temperature dependence Nonvolatile memory

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：