The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall *** near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly ...
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The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall *** near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device *** this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric *** annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum ***,the pixel areas beneath the pre-deposited SiO_(2)layer were selectively and effectively *** was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage ***,applying a thicker SiO_(2)protective layer minimized device resistance and boosted device efficiency *** the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and *** results indicated that after 4 h of air annealing and with a 3.5-μm SiO_(2)protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10^(-6)A/cm^(2)at-10 V voltage and a peak on-wafer external quantum efficiency of~6.48%.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device ***-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based *** planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with ***,the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors
Optoelectronic devices are advantageous in in-memory light sensing for visual information processing,recognition,and storage in an energy-efficient ***,in-memory light sensors have been proposed to improve the energy,...
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Optoelectronic devices are advantageous in in-memory light sensing for visual information processing,recognition,and storage in an energy-efficient ***,in-memory light sensors have been proposed to improve the energy,area,and time efficiencies of neuromorphic computing *** study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS2 metal-oxide-semiconductor(MOS)charge-trapping memory structure—the basic structure for charge-coupled devices(CCD)—and showing its suitability for in-memory light sensing and artificial visual *** memory window of the device increased from 2.8 V to more than 6V when the device was irradiated with optical lights of different wavelengths during the program ***,the charge retention capability of the device at a high temperature(100 ℃)was enhanced from 36 to 64%when exposed to a light wavelength of 400 *** larger shift in the threshold voltage with an increasing operating voltage confirmed that more charges were trapped at the Al_(2)O_(3)/MoS_(2) interface and in the MoS_(2) layer.A small convolutional neural network was proposed to measure the optical sensing and electrical programming abilities of the *** array simulation received optical images transmitted using a blue light wavelength and performed inference computation to process and recognize the images with 91%*** study is a significant step toward the development of optoelectronic MOS memory devices for neuromorphic visual perception,adaptive parallel processing networks for in-memory light sensing,and smart CCD cameras with artificial visual perception capabilities.
Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and *** examples of semiconductor...
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Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and *** examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and *** characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and *** semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic *** breakthroughs includevarious applications such as imaging,optical communication,*** them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low ***,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control *** monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a ***,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant *** article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.
Global technological improvements are accelerating and influencing numerous industries, including education. Using machine learning, technological innovations can be utilized in the education industry. Machine learnin...
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The pace of development in the world of 5G communication systems has proven to be much more demanding than previous generations, with 5G-advanced seemingly around the corner [1]. Extensive research is already underway...
The pace of development in the world of 5G communication systems has proven to be much more demanding than previous generations, with 5G-advanced seemingly around the corner [1]. Extensive research is already underway to structure the next generation of wireless systems(i.e. 6G), which may potentially enable an unprecedented level of human–machine interaction [2].
This article describes the architecture of software services that provide registration of small boat data to build maritime safety. The proposed system architecture which so-called SIMKAPEL aims to support small boat ...
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This paper introduces a novel hybrid genetic algorithm combined with data mining to solve a version of the early/tardy scheduling problem in which no unforced idle time may be inserted in a sequence. The chromosome re...
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This paper presents a hybrid BRKGA (Q-HBRKGA) that combines BRKGA with Q-learning and a Local Branching technique to solve the Knapsack Problem with Forfeits(KPF). The aim is to tackle this problem, a vari-ant of the ...
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Corrosion poses a significant challenge in industries due to material degradation and high maintenance costs, making effective inhibitors essential. Recent studies suggest expired pharmaceuticals as alternative corros...
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Since the emergence of Pokémon Go in 2016, the world has been introduced to Augmented Reality (AR) games. Many IT companies have begun developing augmented reality (AR) games due to the great commercial potential...
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ISBN:
(纸本)9798350389654
Since the emergence of Pokémon Go in 2016, the world has been introduced to Augmented Reality (AR) games. Many IT companies have begun developing augmented reality (AR) games due to the great commercial potential in this industry. Certain products may have managed to remain viable in the market, while others were forced to close due to one or two factors. Since the emergence of Pokémon Go, no other game has managed to surpass its unprecedented success. The company responsible for developing Pokémon Go has decided to shut down one of their games due to a lack of consumer interest. The technology of augmented reality (AR) is consistently associated with the concept of immersion. Immersion is a key aspect of the game that allows users to deeply engage and feel fully involved in the experience. This study will employ a quantitative methodology, utilising a questionnaire that will be distributed to and completed by those who have engaged in augmented reality (AR) games. The data will be analysed using Smart PLS to examine the impact of user experience on immersion, which in turn influences intention. After gathering over 200 participants by spreading google form questionnaires and doing data analysis, the findings indicate that only a few aspects of user experience, namely Brand Experience and User Need Experience, have an impact on reasons. Niantic, the developer of Pokémon Go, was unable to replicate their success with a similar augmented reality game called Harry Potter: Wizards Unite. The initial release occurred on June 21, 2019, and the shutdown took place on December 21, 2021. In the beginning, they shown a profound enthusiasm for the game but were unable to sustain it, much as Pokémon Go. According to Niantic CEO John Hanke, the primary reason for the game's shutdown was its immersion. Immersion has a notable impact on User Confirmation, which in turn has a notable impact on Satisfaction, and Satisfaction has a notable impact on Intention. Moreover, there have be
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