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30th International Symposium on semiconductor Manufacturing, ISSM 2024

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokkaichi-shi Japan Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokohama-shi Japan Kioxia Corporation Advanced Memory Process Development Center Memory Division Yokkaichi-shi Japan

ISBN: (纸本)9798331510589

In recent years, the complexity of semiconductor manufacturing processes has increased, leading to a growing need for the high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids within the process bath can vary depending on the device structure, causing variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that iteratively adjusts the device structure based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3d flash memories, word-line formation in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process. This fluctuation may cause various problems. This study introduces an innovative method utilizing multi-objective Bayesian optimization to derive optimal wet etching bath design parameters;this method is informed by image and physical-quantity data from fluid dynamics simulations [1]. This approach is validated through simulation experiments, whose results are used to identify the best possible wet etching bath designs effectively. © 2024 IEEE.

关键词： Wet etching

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A Precision Enhancement deep Learning Framework for Package Substrate defect detection

A Precision Enhancement Deep Learning Framework for Package ...

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International Microsystems, Packaging, Assembly and Circuits technology (IMPACT)

作者： Yi-Chung Hsu Wong-Shian Huang AI & Advanced Optical Technology Development Division Corporate R&D Advanced Semiconductor Engineering (ASE) Inc. Zhubei City Hsinchu County 302 Taiwan R.O.C.

In the manufacturing industry, producing a large quantity of highquality products every day is the top priority. recently, the integration of Automated Optical Inspection (AOI) equipment and deep Neural Network (dNN) defect image predictions has demonstrated a significant reduction in manual effort required for defect inspection in manufacturing industrial applications. However, during substrate manufacturing, changes in in-process conditions can lead to unexpected variations in defects, such as combinations of multiple defects or anomalies that humans are not familiar with. Consequently, mainstream dNN-based object detection (Od) methods have yet to achieve the desired accuracy for detecting these defects images in production line, and hence human visual inspections remain essential. In this paper, we propose a defect detection framework to both reduce the need for human examination and maintain the high quality of normal products for downstream processes. This method integrates three dNN methods: Od, anomaly detection (Ad), and auxiliary classification (AC). Od constructs hyperplanes for bounding-box objects and classes. Ad measures distances between embedding vectors trained from normal samples to detect anomalies. AC operates by centering the object proposed by Od within a cropped image and re-judging the object's class, which can refine Od's anchor-based training. We conducted an ASE manufacturing dataset experiment, and our method reduced human examination by 28%, with only a 2.8% underkill rate. Combining Od and AC achieved 93.21% defect classification accuracy, surpassing mainstream accuracy 89.74%. With the assistance of our new framework, we are able to simultaneously reduce the manual efforts for examination and increase the accuracy of defect classification. When applied in MFG production lines, this technology can surely assist our factory operation, enabling us to better meet a smart factory requirements.

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development of high contrast EUV photoresist for narrow pitch C/H patterning 41

Development of high contrast EUV photoresist for narrow pitc...

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Advances in Patterning Materials and Processes XLI 2024

作者： Moon, Yonghoon do, Sungan Kim, Hana Kwon, Seungchul Park, Hoyoon Kang, Cheol Lee, Jae-Jun Ahn, Chanjae Androsov, dmitry Kim, Minsang Hong, Suk-Koo Material Development Team Semiconductor R&d Center Samsung Electronics Samsungjeonjaro 1-1 Gyeonggi-do Hwaseong-si Korea Republic of Material Research Center Samsung Advanced Institute of Technology Samsung Electronics Samsung-ro 130 Yeongtong-gu Gyeonggi-do Suwon-si Korea Republic of

ISBN: (纸本)9781510672208

The organic non-chemically amplified resist (non-CAr) materials have been developed for fine pitch contact hole patterning process to remove the acid blur of conventional chemically amplified resist (CAr) system, but non-CAr materials usually show lower contrast and sensitivity compared to conventional CAr materials, so additional improvements are needed for practical application. In this study, we developed new platforms of EUV PTd resist materials to overcome these limitations and enable fine pitch C/H patterning. The main target of our study is to reduce acid blur and to maintain chemical contrast compared to conventional CAr system by 1) finding better EUV-active structures, or 2) simultaneously generating polarity switching and molecular weight (M.W.) change, or 3) maximizing the M.W. change through the depolymerization. Those new resist materials have confirmed showing equivalent or higher contrast compared to conventional CAr, and also having good resolution in EUV C/H patterning evaluation. © COPYrIGHT SPIE. downloading of the abstract is permitted for personal use only.

关键词： Photoresists

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Evolution of surface quality in micromilling Ti-6Al-4V alloy with increasing machined length 7

Evolution of surface quality in micromilling Ti-6Al-4V alloy...

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7th CIrP Conference on Surface Integrity, CSI 2024

作者： Gonçalves, Maria Clara Coimbra Alsters, rob Curtis, david M'Saoubi, rachid Ghadbeigi, Hassan University of Sheffield Mechanical Engineering Department Mappin Street Sheffield United Kingdom R&D Materials and Technology Development Seco Tools AB Zandterweg 14 Lottum5973 RC Netherlands Advanced Manufacturing Research Centre University of Sheffield RotherhamS60 5TZ United Kingdom R&D Materials and Technology Development Seco Tools AB Fagersta737 82 Sweden Division of Production and Materials Engineering Lund University Ole Römers väg 1 Lund221 00 Sweden

Micromilling is a subtractive manufacturing process that presents challenges due to scale effects and rapid tool wear. To understand the evolution of surface quality when increasing the machined length during the micromilling process, this study assessed the surface roughness, topography, and defects of slots micromilled on Ti-6Al-4V. For the experiments, 1 mm diameter flat end mills were employed, and the cutting parameters were varied using a full factorial design. Subsequently, the surface texture field parameter Sa was assessed every 20 mm, up until the machining length of 260 mm. The analysed results led to the conclusion that, for the adopted set of parameters and the machining length of up to 260 mm, surface roughness was not significantly correlated to the machined length in the micromilling process of Ti-6Al-4V, as the Pearson coefficient, obtained from the correlation analysis, was -0.052. However, the surface roughness was mainly influenced by feed rate (Pearson coefficient of 0.82), with higher feed rates leading to roug surfaces (up to Sa = 0.4 μm) duhere to the tool load increase that causes wider feed marks on the surface. regarding the feed marks, they were affected by the tool rotational frequency due to system vibration. Additionally, surface defects of adhered material, smearing, tearing and side flow were observed. For lower feeds, material adhesion was the main type of defect observed, while higher feed rates favoured the side flow phenomenon. © 2024 The Authors. Published by Elsevier B.V.

关键词： Surface roughness

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Optimal design of Wet Etching Bath for 3d Flash Memories Using Multi-Objective Bayesian Optimization

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IEEE Transactions on semiconductor Manufacturing 2025年

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang KIOXIA Corporation AI and System Research Center Frontier Technology R and D Institute Japan KIOXIA Corporation Advanced Memory Process Development Center Memory Division Japan

recently, the complexity of semiconductor manufacturing processes has increased, resulting in a growing need for high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids in the process bath can vary depending on the device structure, which causes variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that adjusts the device structure iteratively based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3d flash memory devices, the formation of word lines in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process, which can cause various problems. Thus, this study proposes an innovative multi-objective Bayesian optimization method that is informed by image and physical quantity data from fluid dynamics simulations to derive optimal wet etching bath design parameters. The proposed method was validated through simulation experiments, and the simulation results were used to identify the best possible wet etching bath designs. © 1988-2012 IEEE.

关键词： Wet etching

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Optical design of dispersive metasurface nano-prism structure for high sensitivity CMOS image sensor

Optical design of dispersive metasurface nano-prism structur...

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2023 International Electron devices Meeting, IEdM 2023

作者： Choi, Chulsoo Park, Jonghoon Lee, Yunki Kim, Bumsuk Kim, Junghoon Kim, Sunwook Kim, Junghyun roh, Sookyoung Ahn, Sungmo Mun, Sangeun Lee, Beomsuk Nah, Seungjoo Park, Howoo Kim, Hyunchul Moon, Changrok Yun, Seokho Ahn, Jungchak Yim, Joonseo Samsung Electronics System Lsi Division Gyeonggi-do Yongin-si Korea Republic of Samsung Advanced Institute of Technology Gyeonggi-do Suwon Korea Republic of Samsung Electronics Semiconductor R&d Center Gyeonggi-do Hwaseong-si Korea Republic of Samsung Electronics Foundry Division Gyeonggi-do Yongin-si Korea Republic of

ISBN: (纸本)9798350327670

In this paper, a meta-photonic structure called nano-prism (NP) is designed by Full EM-wave analysis tool, rigorous coupled wave analysis (rCWA), and experimentally applied on 0.64µm pixel image sensor having 50Mp with 5mm×4mm size as a replacement of conventional µ-lens. In order to apply the NP structure to the product level image sensor, it is very important to secure not only the characteristics in direct light but also the pixel characteristics in the oblique light condition with chief ray angle (CrA). In this paper, NP design and improved pixel characteristics in the oblique light condition are described. Also, one of the key advantage of NP is that the spectral response is adjustable by arranging the pattern design without changing the color filter materials, which is verified in this paper. Furthermore, innovatively improved quantum efficiency (QE) improvement that resulted in 25% of sensitivity and 1.2dB of signal to noise ratio (SNr) improvement, and other important sensor characteristics such as auto-focus and resolution are also demonstrated in this paper. © 2023 IEEE.

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Identification of key atomic process of Metal-induced lateral crystallization from First-principles Calculations

Identification of key atomic process of Metal-induced latera...

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International Conference on Simulation of semiconductor Processes and devices (SISPAd)

作者： Yutaro Ogawa Hikari Suzuki Masayasu Miyata Advanced Memory Development Center Memory Division Kioxia Corporation Yokohama Japan Core Technology Research Center Frontier Technology R&D Institute Kioxia Corporation Yokohama Japan

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

In order to improve the efficiency of metal-induced lateral crystallization (MILC) using Ni, it is important to understand the fundamental mechanisms. In this study, the NiSi 2 /amorphous Si (a-Si) interface is appropriately modeled and the atom transfer behavior during the MILC process was explored by first-principles calculations. It is found that the overall picture of MILC mechanism can be effectively comprehended through three fundamental processes: (1) the formation of Ni vacancies at the a-Si interface, (2) the diffusion of Ni vacancies within the bulk NiSi2, and (3) the reconstruction of the c-Si interface. The trends under stress, observed in experiments, are explained by applying this mechanism to the MILC process.

关键词： Surface reconstruction Crystallization Market research Nickel Silicon semiconductor process modeling Epitaxial growth Stress Surface treatment

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direct growth and manufacturing of single-crystalline 2d FETs on 8-inch Si wafers

Direct growth and manufacturing of single-crystalline 2D FET...

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2024 IEEE International Electron devices Meeting, IEdM 2024

作者： Yoo, Min Seok Jung, Alum Yang, Suk Yoo, Joung Eun Lee, Eun-Kyu Byun, Kyung-Eun Baik, Jaeyoon Yun, dong-Jin Park, Jaehyun Kim, Jeehwan Seol, Minsu Samsung Advanced Institute of Technology Samsung Electronics Gyeonggi-do Suwon Korea Republic of Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwaseong Korea Republic of Beamline Division Pohang Accelerator Laboratory 80 Jigokro-127-beongil Nam-gu Pohang Gyeongbuk37673 Korea Republic of Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA United States

ISBN: (纸本)9798350365429

While 2d transition metal dichalcogenides (TMds) are seen as promising next-generation channel materials to overcome the scaling limitations of Si, their commercialization requires processes for directly growing single-crystalline (SC) 2d TMd channels on high-k gate dielectrics and fabricating devices. This study presents a method for directly growing 2d MoS2 on AlO and HfO gate dielectrics using MOCVd, achieving selectively grown, SC-channels on 200 mm wafers. Our direct-grown SC-MoS2 exhibited on-current up to 419.0 μA/μm and nearly 100% yield at 500 nm channel length. © 2024 IEEE.

关键词： Silicon wafers

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Extreme Ultraviolet Scatterometry for Characterizing Nanometer Scale Features in a damascene Sample

Extreme Ultraviolet Scatterometry for Characterizing Nanomet...

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2024 Frontiers in Optics, FiO 2024

作者： Klein, C. Jenkins, N. Shao, Y. Li, Y. Park, S. Kim, W. Kapteyn, H. Murnane, M. Department of Physics JILA STROBE NSF Science & Technology Center University of Colorado NIST BoulderCO United States Core Technology R&D Team Mechatronics Research Samsung Electronics Co. Ltd. Hwasung Korea Republic of Advanced Process Development Team 4 Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwasung Korea Republic of Kapteyn-Murnane Laboratories Inc. 4775 Walnut Street #102 BoulderCO80301 United States

We characterize nanoscale out-of-plane features on an industrially relevant semiconductor sample using a coherent extreme ultraviolet high harmonic generation source at 29nm. The advantages of using 13.5nm light are a... 详细信息

关键词： Extreme ultraviolet lithography

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Oxide Channel Ferroelectric NANd device with Source-Tied Covering Metal Structure: Wide Memory Window (14.3 V), reliable retention (> 10 Years) and disturbance Immunity $(\delta \mathrm{V}_{\text{th}}\leq 0.1\mathrm{V})$ for QLC Operation

Oxide Channel Ferroelectric NAND Device with Source-Tied Cov...

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International Electron devices Meeting (IEdM)

作者： Hongrae Joh Giuk Kim Jihye Ock Seungyeob Kim Sangmok Lee Sangho Lee Kwangsoo Kim Suhwan Lim Jongho Woo Wanki Kim daewon Ha Jinho Ahn Sanghun Jeon School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Korea Semiconductor R&D Center Samsung Electronics Co. Ltd Korea Division of Materials Science and Engineering Hanyang University Korea

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

We show an oxide-channel (Ox. Ch.) based gate-injection type ferroelectric NANd (FeNANd) device with source-tied covering metal (SCM) and control dielectric (***). The SCM and *** play crucial roles in the performance enhancement of FeNANd cells. (i) The proposed structure addresses the channel depletion issue of ***. by utilizing accumulated holes in the grounded SCM during ErS. This increases the electric field across the gate interlayer and FE layer, thereby boosting ErS efficiency. (ii) The read operation of erase states distributes a significant portion of the read voltage to ***, intensifying the $\mathrm{V}_{\text{th},\text{ErS}}$ . These effects result in a wide memory window (MW~14.3V). Furthermore, the introduction of a $\text{Si}_r\mathrm{N}_r$ deep trap-level layer and careful gate stack design led to superior retention (MW:11.5V after 10 years) and disturbance immunity ( $\delta \mathrm{V}_{\text{th}} < 0.1\mathrm{V}$ after $10^r$ disturb cycles). We also verify the roles of SCM and *** through analytical modeling. Lastly, the proposed structure is compatible with current 3d-NANd fabrication, offering equivalent channel hole pitch and density.

关键词： Analytical models Three-dimensional displays distributed databases Switches Logic gates Immunity testing Iron Time measurement dielectrics Time factors

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