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Dry basal plane graphene wrappings on spherical nickel-rich oxide layered particles for lithium-ion batteries

Journal of Energy Chemistry 2025年第5期104卷 10-19页

作者： Van-Chuong Ho Thanh N.Huynh Thi Huong Pham Hyun-seung Kim Hun-Gi Jung Ki Jae Kim Seung-Min Oh Young-Jun Kim Junyoung Mun School of Advanced Materials Science and Engineering Sungkyunkwan UniversitySeobu-roJangan-guSuwon-siGyeonggi-do 2066Republic of Korea SKKU Advanced Institute of Nano Technology(SAINT) Sungkyunkwan UniversitySuwonRepublic of Korea Advanced Batteries Research Center Korea Electronics Technology Institute25Saenari-roSeongnam 13509Republic of Korea Energy Storage Research Center Korea Institute of Science and TechnologySeoul 02792Republic of Korea KIST-SKKU Carbon-Neutral Research Center Sungkyunkwan UniversitySuwon 16419Republic of Korea Department of Energy Science Sungkyunkwan UniversitySuwon 16419Republic of Korea Battery Cell Development Team 1 Research&Development DivisionHyundai Motor Company150Hyundaiyeonguso-roNamyang-eupHwaseong-siGyeonggi-do 18280Republic of Korea Department of Nano Engineering Sungkyunkwan UniversitySuwonRepublic of Korea SKKU Institute of Energy Science and Technology(SIEST) Sungkyunkwan University2066Seobu-roJangan-guSuwon-siGyeonggi-do 16419Republic of Korea

Particle-to-particle dry graphene coatings on Ni-rich layered oxide materials are proposed for highenergy lithium-ion batteries(LIBs)to mitigate the inherent and engineering challenges related to the electrochemically fragile surfaces,as well as limiting electrode thickness and *** a shear stress-based coating process without supplementary solvent or heat treatment,graphene sheets derived from graphene powder are applied onto the surface of spherical LiNi_(0.89)Co_(0.055)Mn_(0.055)O_(2)(NCM)*** process achieves a coating thickness equivalent to or fewer than 10 layers of graphene and exposes the basal *** graphene-coated material increases particle hardness and mitigates degradation caused by inter-particle pressure,enabling the formation of high-density electrodes without *** the absence of additional carbon-conducting agents for the high-density composite electrode with a density of 4.0 g cm^(-3),it significantly enhances rate capability,demonstrating more than 5 times improvement by achieving 149.4 mAh g^(-1)at 2 C compared to the bare sample(28.9 mAh g^(-1)).Furthermore,the dry graphene coating enables the high areal capacity of 6.98 mAh cm^(-2).By exposing the basal plane of the graphene coating,the process enhances chemical stability,effectively inhibiting side reactions at the interface and mitigating cycle degradation.

关键词： Dry graphene coating Basal-plane coating Particle-to-particle High electrical conductivity High areal capacity

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development of mine detection system for mobile robot system

Development of mine detection system for mobile robot system

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2008 International Conference on Control, Automation and Systems, ICCAS 2008

作者： Seokhwan, Kim Seung, Park Jeongyeob, Lee Byunghak, Han Changhwan, Choi Advanced Research Team HyundaiRotem Uiwang Korea Republic of Department of Technology Planning 1 Defense Agency for Technology and Quality Korea Republic of System Development Team HyundaiRotem Uiwang Korea Republic of Nuclear Fuel Cycle Remote Technology Lab. Korea Atomic Energy Research Institute Daejeon Korea Republic of

ISBN: (纸本)9788995003893

This paper introduces a development process of a manipulator that is installed to a mobile robot system and used to detect explosive ordnance and dispose it. Based on system requirements, its boundary conditions are analyzed and the minimum driving ranges and RPMs of each joint are calculated. To choose the optimum actuators including reduction ratio's of the gearbox, the advanced Straete et al.'s normalization method is used after conducting dynamic analysis. Two kinds of dynamic analyses are executed to confirm the result, one is MATLAB's SimMechanics and the other one is PRO-Engineer's Mechanism. Finally, structural analysis is conducted to verify the robustness of the designed system.

关键词： Mobile robots

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Vertical structure NAND flash array integration with paired FinFET multi-bit scheme for high-density NAND flash memory application

Vertical structure NAND flash array integration with paired ...

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2008 Symposium on VLSI technology Digest of Technical Papers, VLSIT

作者： Koo, June-Mo Yoon, Tae-Eung Lee, Taehee Byun, Sungjae Jin, Young-Gu Kim, Wonjoo Kim, Sukpil Park, Jongbong Cho, Junseok Choe, Jeong-Dong Lee, Choong-Ho Jong, Jin Lee Han, Je-Woo Kang, Yunseung Park, Sangjun Kwon, Byoungho Jung, Yong-Ju Yoo, Inkyoung Park, Yoondong Samsung Advanced Institute of Technology San 14-1 Giheung-Gu Yongin-City Gyeonggi-Do 449-712 Korea Republic of Advanced Technology Development Team 2 Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of DRAM Process Architecture Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of Process Development Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of FAB Process Technology Development Group 1 Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of

ISBN: (纸本)9781424418053

Multi-bit Vertical Structure NAND (VsNAND) Flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array integration issues regarding the sub-10nm vertical structure fin could be solved by proper choices of isolation material, ion implantation, and word line patterning. VsNAND Flash array cells with TANOS (TaN/Al2O 3/SiN/SiOx/Si) charge trap structure show possibilities of acceptable program/erase properties and cell Vth distribution characteristics for multi-level NAND Flash application. © 2008 IEEE.

关键词： FinFET

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Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate

Sub-10 nm gate-all-around CMOS nanowire transistors on bulk ...

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2009 Symposium on VLSI technology, VLSIT 2009

作者： Ming, Li Kyoung, Hwan Yeo Sung, Dae Suk Yun, Young Yeoh Kim, Dong-Won Tae, Young Chung Kyung, Seok Oh Lee, Won-Seong Advanced Technology Development Team 1 Semiconductor R and D Center Samsung Electronics Co. Ltd. San 24 Nongseo-Dong Kiheung-Ku Yongin-City Kyoungi-Do 449-711 Korea Republic of

ISBN: (纸本)9784863480094

In this paper, sub-10nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054A/μm at off leakage currents of 102/6.44nA/μm are obtained for N/PMOS, respectively. The impacts of nanowire diameter (DNW) and gate oxide thickness (TOX) as well S/D parasitic resistance (RSD) on performance are investigated in details.

关键词： Nanowires

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A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain: Application to Sub-50nm DRAM Cell

A Novel Body Effect Reduction Technique to Recessed Channel ...

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2007 IEEE International Electron Devices Meeting (IEDM 2007), vol.2

作者： Jong-Man Park Si-Ok Sohn Jung-Soo Park Sang-Yeon Han Jun-Bum Lee Wookje Kim Chang-Hoon Jeon Shin-Deuk Kim Young-Pil Kim Yong-Seok Lee Satoru Yamada Wouns Yang Donggun Park Won-Seong Lee Advanced Technology Development Team 1 Hwaseong South Korea Process Development Team Samsung Electronics Co. Manufacturing Technology Team 2 Samsung Electronics Co. Hwasung-city Gyeonggi-Do KOREA

We have successfully fabricated fully integrated advanced RCAT (Recess Channel Array Transistor) featuring partially insulating oxide layers in bulk Si substrate, named Partially-insulated-RCAT (Pi-RCAT) to suppress body effect of conventional RCAT and improve current drivability in DRAM cell. The Pi-RCAT demonstrated superior characteristics in body effect, subthreshold slope (SW) and higher current drivability with comparable I{sub}(on)-I{sub}(off) characteristics in comparison with conventional RCAT. Furthermore, in the Partially-insulated-STI (Pi-STI) of core and peripheral structure formed simultaneously, well isolation characteristic is improved remarkably due to increase of effective isolation path. In this paper, Pi-RCAT is proved to be effective for the scalability and drivability of RCAT, and Pi-STI is suitable for the improvement of chip shrinkage efficiency.

关键词： Insulation Random access memory Doping Epitaxial layers Scalability Transistors Subthreshold current Degradation Electrodes Substrates

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EFFECTS OF MODIFICATION OF THE CARBIDE CHARACTERISTICS THROUGH GRAIN BOUNDARY SERRATION ON CREEP-FATIGUE LIFE IN AUSTENITIC STAINLESS STEELS

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Acta Metallurgica Sinica(English Letters) 2004年第5期17卷 632-638页

作者： K.J.Kim H.U.Hong K.S.Min S.W.Nam Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 KoreaPosco Technical Research Laboratory #1 Koedong-dong Nam-gu Pohang 790-300 KoreaProcess Solution Development Team 1 LCD R&D Center AMLCD Division Device Solution Network Samsung Electronics Co. LTD.San 24 Nongseo-ri Giheung-eup Yongin Gyeonggi-do 449-771 KoreaDept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 Korea

Modification of the carbide characteristics through the grain boundary serration is investigated, using an AISI 316 and 304 stainless steels. In both steels, triangular carbides were observed at straight grain boundaries while planar carbides were observed at the serrated grain boundaries. The serrated grain boundary energy is observed to be much lower than that of the straight one. Therefore, the carbide morphology is found to be changed from triangular to planar along the serrated boundary to reduce the interfacial energy between the carbide and the matrix. The creep-fatigue properties of these steels at 873K have been investigated. The creep-fatigue life of the sample with planar carbide at the serrated grain boundary was found to be much longer than that with triangular carbide at the straight one. These results imply that the planar carbides with lower interfacial energy have higher cavitation resistance, resulting in the retardation of cavity nucleation and growth to increase creep-fatigue life.

关键词： cavity nucleation factor grain boundary serration carbide morphology austenitic stainless steel grain boundary cavitation

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Twin silicon nanowire FET (TSNWFET) On SOI with 8 nm silicon nanowires and 25 nm surrounding TiN gate

Twin silicon nanowire FET (TSNWFET) On SOI with 8 nm silicon...

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IEEE SOI-3D-Subthreshold Microelectronics technology Unified Conference (S3S)

作者： Dong-Won Kim Ming Li Kyoung Hwan Yeo Yun Young Yeoh Sung Dae Suk Keun Hwi Cho Kyungseok Oh Won-Seong Lee Advanced Technology Development Team 1 Semiconductor Research & Development Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

ISBN: (纸本)9781424419548

In this work, fabrication of TSNWFET on SOI with down to 25-nm TiN surrounding gate and 8-nm silicon nanowires is reported with high manufacturability and improved device reliability including reduced junction and gate leakage currents by fully eliminating the bottom parasitic channel existing in previous TSNWFET on bulk Si. And high performance is also obtained to be 1124muA/mum and 1468muA/mum at off current of 1nA/mum for NMOS and PMOS, respectively.

关键词： Silicon Logic gates Silicon germanium Silicon on insulator technology Reliability Nanoscale devices MOS devices

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Electrochemical properties of carbon nanotube/silicon composites for anode of Li-ion battery

Electrochemical properties of carbon nanotube/silicon compos...

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Lithium-Ion Batteries: Materials and Devices - 210th ECS Meeting

作者： Eom, J.Y. Kwon, H.S. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 GuSeongDong YuSeongGu DaeJeonSi 305-701 Korea Republic of Development Team Energy Business Division Samsung SDI 508 SungSungDong CheonAnSi ChungCheongNamDo 330-300 Korea Republic of

ISBN: (纸本)9781604239072

Multi-walled carbon nanotube (MWNT)/silicon composites with different weight ratios were produced from purified MWNTs and Si powder by high energy ball-milling and then electrochemically inserted with lithium. The charge/discharge properties for the ball-milled MWNT/Si composite anodes were found to be very sensitive to the weight ratio of MWNT to Si. The highest C rev and lowest Cirr of the composite anode were measured to be 1770 mAh/g and 469 mAh g-1 respectively at the ratio of MWNT0.5/Si0.5 During charging/discharging processes, most of Li ions were inserted into the ball-milled MWNT/Si composites by alloying with Si particles at potentials positive to 0.25 V vs. Li, and extracted from the ball-milled MWNT/Si composites by dealloying with Si particles at potentials positive to 0.5 V vs. Li. The good capacity and cycle performance of the MWNT0.5/Si0.5 composite anode is due primarily to the fact that MWNTs encapsulating fine Si particles by strong contact prevent Si particles from electrical insulation caused by the crumbling of the Si particles. copyright The Electrochemical Society.

关键词： Lithium-ion batteries

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Effect of macropore formation in Pt catalyst supports on the oxidation activity for diesel fuel mist

Effect of macropore formation in Pt catalyst supports on the...

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作者： Uchisawa, Junko Obuchi, Akira Nanba, Tetsuya Hara, Shigeki Caravella, Alessio Tango, Takeru Murakami, Tatsuro Nakagawa, Hideyuki Kogawa, Takahiro Abe, Akira Energy-saving System Team Research Center for New Fuels and Vehicle Technology National Institute of Advanced Industrial Science and Technology 16-1 Onogawa Tsukuba 305-8569 Japan Membrane Separation Processes Group Research Institute for Innovation in Sustainable Chemistry National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi Tsukuba 305-8565 Japan Adsorption Functional Materials Development Group Research and Development Department Mizusawa Industrial Chemicals Ltd. 1-1 Mizusawa Tainai 959-2638 Japan Mitsui Mining and Smelting Co. Ltd. 1013-1 Ageoshimo Ageo 362-0025 Japan

The effect of macropore formation in catalyst supports on the oxidation activity for diesel fuel mist was examined with the goal of improving catalyst efficiency. To investigate the effect on a laboratory scale using granular samples, we designed a reaction system that supplied fuel mist to the catalyst bed directly by an air atomizing nozzle. The catalytic activity was found to be improved by macropore formation in the support. This effect was also demonstrated for a washcoated catalyst on a honeycomb with diesel engine exhaust. These results suggest that the macropore diffusion channels are secure even if fuel mist attaches to the support surface, and the reactant gas can diffuse to the interior of the support and reach the active sites. Macropore formation prevented the blockage of pores of the support surface and thus the active sites of the catalyst. © 2011 American Chemical Society.

关键词： Diesel fuels

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Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/Drain

Experimental Investigation on Superior PMOS Performance of U...

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International Electron Devices Meeting (IEDM)

作者： Ming Li Kyoung Hwan Yeo Yun Young Yeoh Sung Dae Suk Keun Hwi Cho Dong-Won Kim Donggun Park Won-Seong Lee Advanced Technology Development Team1 Semiconductor Research and Development Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

Strained silicon nanowire transistor with embedded SiGe (e-SG) source/drain is investigated for the first time on experiments. By compressive stress induced by e-SG, PMOS performance is improved by about 85%. <110>-oriented nanowire channel also contributes 80% PMOS performance improvement relative to <100> direction. By combination of uniaxial stress and <110> channel direction, up to 136% PMOS performance enhancement is obtained so that superior PMOSFET to NMOSFET is for the first time observed with silicon channel material.

关键词： Silicon germanium Germanium silicon alloys Compressive stress MOSFET circuits MOS devices Degradation Substrates Fabrication Tunneling Research and development

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