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Unlocking the secrets of Ti / Si co-doped diamond-like carbon films for high-performance lubrication in humid environments

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Diamond and Related Materials 2025年 156卷

作者： Xing, Zhaoyang Wang, Xinfei Wang, Xin Xu, Chunlin Zhang, Bin Key Laboratory of Science and Technology on Wear and Protection of Materials Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou730000 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Surface Engineering Institution AECC Beijing Institute of Aeronautical Materials Beijing100095 China

In this study, Ti / Si co-doped diamond-like carbon (a-C:Ti:Si) films were successfully deposited on silicon wafers, GCr15, and TC4 substrates using a direct current high-power impulse magnetron sputtering co-deposition technique. The effects of varying DC currents on the microstructure, mechanical properties, and tribological performance of the films were systematically investigated. Results indicate that as the DC current increased, the sp3-C content in the films monotonically rose, leading to significant improvements in hardness, elastic modulus, H/E, and H3/E2 ratios. The films deposited on TC4 substrates exhibited the best overall mechanical properties. Tribological tests revealed that the a-C:Ti:Si films achieved lubrication in a humid environment (50 % relative humidity) through the formation of a highly graphitized transfer film and low-shear wear tracks. The lubrication mechanism involves Si-induced interfacial phase transformation and frictional softening, as well as titanium-catalyzed graphitization of the transfer layer. Additionally, tribochemical reactions generated colloidal Si particles and weak shear-strength SiO₂ layers, further enhancing lubrication. This study provides a novel co-deposition method for DLC films and offers a new lubrication strategy for green chemistry and industrial energy conservation and emission reduction. © 2025 Elsevier B.V.

关键词： Diamond like carbon films

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Glycol Monomethyl Ether-Substituted Carbazolyl Hole-Transporting Material for Stable Inverted Perovskite Solar Cells with Efficiency of 25.52 %

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Angewandte Chemie 2024年第33期136卷

作者： Hui Zhou Weilin Wang Prof. Yuwei Duan Rui Sun Yong Li Zhuang Xie Dongfang Xu Meizi Wu Youliang Wang Hongxiang Li Qunping Fan Yang Peng Yao Yao Chentong Liao Prof. Qiang Peng Prof. Shengzhong Liu Prof. Zhike Liu Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China School of Chemistry Xi'an Jiaotong University 710049 Xi'an P. R. China College of Materials and Chemistry & Chemical Engineering Chengdu University of Technology Chengdu 610059 China College of Polymer Science and Engineering State Key Laboratory of Polymer Materials Engineering Sichuan University Chengdu 610065 China State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China

Organic self-assembled molecules (OSAMs) based hole-transporting materials play a pivotal role in achieving highly efficient and stable inverted perovskite solar cells (IPSCs). However, the reported carbazol-based OSAMs have serious drawbacks, such as poor wettability for perovskite solution spreading due to the nonpolar surface, worse matched energy arrangement with perovskite, and limited molecular species, which greatly limit the device performance. To address above problems, a novel OSAM [4-(3,6-glycol monomethyl ether-9H-carbazol-9-yl) butyl]phosphonic acid (GM-4PACz) was synthesized as hole-transporting material by introducing glycol monomethyl ether (GM) side chains at carbazolyl unit. GM groups enhance the surface energy of Indium Tin Oxide (ITO)/SAM substrate to facilitate the nucleation and growth of up perovskite film, suppress cation defects, release the residual stress at SAM/perovskite interface, and evaluate energy level for matching with perovskite. Consequently, the GM-4PACz based IPSC achieves a champion PCE of 25.52 %, a respectable open-circuit voltage ( V OC ) of 1.21 V, a high stability, possessing 93.29 % and 91.75 % of their initial efficiency after aging in air for 2000 h or tracking at maximum power point for 1000 h, respectively.

关键词： perovskite solar cells hole-transporting material inverted self-assemble molecule

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Nanoscale non-destructive ferroelectric characterization with non-contact heterodyne electrostrain force microscopy

arXiv

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arXiv 2021年

作者： Zeng, Qibin Huang, Qicheng Wang, Hongli Li, Caiwen Fan, Zhen Chen, Deyang Cheng, Yuan Zeng, Kaiyang Department of Mechanical Engineering National University of Singapore Singapore117576 Singapore Institute for Advanced Materials South China Academy of Advanced Optoelectronics South China Normal University Guangzhou510006 China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced Optoelectronics South China Normal University Guangzhou510006 China Institute of High-Performance Computing Agency for Science Technology and Research Singapore138632 Singapore The Key Lab of Guangdong for Modern Surface Engineering Technology National Engineering Laboratory for Modern Materials Surface Engineering Technology Institute of New Materials Guangdong Academy of Sciences Guangzhou510650 China Monash Suzhou Research Institute Suzhou215123 China Suzhou215123 China

Perceiving nanoscale ferroelectric phenomena from real space is of great importance for elucidating underlying ferroelectric physics. During the past decades, nanoscale ferroelectric characterization has mainly relied on the Piezoresponse Force Microscopy (PFM), however, the fundamental limitations of PFM have made the nanoscale ferroelectric studies encounter significant bottlenecks. In this study, a high-resolution non-contact ferroelectric measurement, named Non-Contact Heterodyne Electrostrain Force Microscopy (NC-HEsFM), has been introduced firstly. It has been unambiguously demonstrated that NC-HEsFM can operate on multiple eigenmodes to perform ideal high-resolution ferroelectric domain mapping, standard ferroelectric hysteresis loop measurement and controllable domain manipulation. With using quartz tuning fork (QTF) sensor and heterodyne detection, NC-HEsFM shows an unprecedented capability in achieving real non-contact yet non-destructive ferroelectric characterization with negligible electrostatic force effect. It is believed that NC-HEsFM can be extensively used in various ferroelectric or piezoelectric studies with providing substantially improved characterization performance. Meanwhile, the QTF-based force detection makes NC-HEsFM highly compatible for high-vacuum and low-temperature environments, providing ideal conditions for achieving an ultra-high spatial resolution to investigate the most intrinsic ferroelectric phenomena. Copyright © 2021, The Authors. All rights reserved.

关键词： Ferroelectricity

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Ultrahigh energy storage density in epitaxial AlN/ScN superlattices

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Physical Review Materials 2021年第7期5卷 L072401-L072401页

作者： Zhijun Jiang Bin Xu Hongjun Xiang L. Bellaiche MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of Physics Xi'an Jiaotong University Xi'an 710049 China Key Laboratory of Computational Physical Sciences (Ministry of Education) State Key Laboratory of Surface Physics and Department of Physics Fudan University Shanghai 200433 China Physics Department and Institute for Nanoscience and Engineering University of Arkansas Fayetteville Arkansas 72701 USA Jiangsu Key Laboratory of Thin Films School of Physical Science and Technology Soochow University Suzhou 215006 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China Shanghai Qi Zhi Institute Shanghai 200232 China

Dielectric and antiferroelectric materials are particularly promising for high-power energy storage applications. However, relatively low energy density greatly hinders their usage in storage technologies. Here, we report first-principles-based calculations predicting that epitaxial and initially nonpolar AlN/ScN superlattices can achieve an ultrahigh energy density of up to 200J/cm3, accompanied by an ideal efficiency of 100%. We also show that high energy density requires that the system be neither too close nor too far from a ferroelectric phase transition under zero electric field. A phenomenological model is further proposed to rationalize such striking features.

关键词： Dielectric properties Energy storage Epitaxial strain Ferroelectricity Strain Superlattices Density functional theory First-principles calculations

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A leap towards high performance quantum dot solar cells

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Science Bulletin 2020年第10期65卷 783-785,M0003页

作者： Shengzhong Liu Key Laboratory of Applied Surface and Colloid Chemistry Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi’an 710119China Dalian National Laboratory for Clean Energy iChEMDalian Institute of Chemical PhysicsUniversity of the Chinese Academy of SciencesChinese Academy of SciencesDalian 116023China

Lead halide perovskites in the form of nanocrystalline quantum dots(QDs)have emerged as a new class of semiconductor materials for photovoltaics(PVs)and *** to the nanoscale size-induced lattice strain and enhanced contribution from the surface energy[1],perovskite QDs have shown superior phase stability at room temperature over their thin film bulk counterparts offering a promising strategy to significantly increase stability and hence lifetime of the perovskite devices.

关键词： perovskite stability hence

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Cover Image, Volume 4, Number 3, May 2022

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Carbon Energy 2022年第3期4卷

作者： Tian-Jiao Wang Yu-Chuan Jiang Jia-Wei He Fu-Min Li Yu Ding Pei Chen Yu Chen School of Materials Science and Engineering Key Laboratory of Macromolecular Science of Shaanxi Province Key Laboratory of Applied Surface and Colloid Chemistry (Ministry of Education) Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Shaanxi Normal University Xi'an China

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Critical topology and pressure-induced superconductivity in the van der Waals compound AuTe2Br

arXiv

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arXiv 2022年

作者： Cheng, Erjian Shi, Xianbiao Yan, Limin Huang, Tianheng Liu, Fengliang Ma, Wenlong Wang, Zeji Jia, Shuang Sun, Jian Zhao, Weiwei Yang, Wenge Xu, Yang Li, Shiyan State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200438 China State Key Laboratory of Advanced Welding Joining and Flexible Printed Electronics Technology Center Harbin Institute of Technology Shenzhen518055 China Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Ministry of Education Harbin Institute of Technology Harbin150001 China Center for High Pressure Science and Technology Advanced Research Shanghai201203 China National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Physics Nanchang University Nanchang330031 China ICQM School of Physics Peking University Beijing100871 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Science Beijing100190 China Sauvage Laboratory for Smart Materials School of Materials Science and Engineering Harbin Institute of Technology Shenzhen China School of Physics and Electronic Science East China Normal University Shanghai200241 China Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China Shanghai Research Center for Quantum Sciences Shanghai201315 China

The study on quantum spin Hall effect and topological insulators formed the prologue to the surge of research activities in topological materials in the past decade. Compared to intricately engineered quantum wells, three-dimensional weak topological insulators provide a natural route to the quantum spin Hall effect, due to the adiabatic connection between them and a stack of quantum spin Hall insulators, and the convenience in exfoliation of samples associated with their van der Waals-type structure. Despite these advantages, both theoretical prediction and experimental identification of weak topological insulators remain scarce. Here, based on first-principles calculations, we show that AuTe2Br locates at the boundary between a strong and a weak topological insulating state. More interestingly, the critical topology of AuTe2Br persists up to an applied pressure of ~ 15.4 GPa before a structural phase transition accompanied by a change of electronic topology and the onset of superconductivity. Our results establish AuTe2Br as a new candidate for weak topological insulators with the potential to realize various other topological phases of matter. Copyright © 2022, The Authors. All rights reserved.

关键词： Tellurium compounds

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Interfacial plasticity controls material removal rate during adhesive sliding contact

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Physical Review Materials 2020年第10期4卷 103605-103605页

作者： Kai Zhao Ramin Aghababaei Surface Mechanics and Tribology Group Department of Engineering Aarhus University 8000 Aarhus C Denmark Jiangsu Key Laboratory of Advanced Food Manufacturing Equipment and Technology School of Mechanical Engineering Jiangnan University Wuxi 214122 China

Adhesive wear is a result of material exchange due to localized adhesive bonding between surface asperities at small scales. It has been recently debated whether a linear wear relation can be observed at the single-asperity level. Using large-scale atomistic simulations, we show that the wear relation is a direct result of the material removal mechanism at the asperity level. In the presence of weak adhesion, sliding is dominated by frictional slipping (i.e., dislocations glide in the contact plane), where occasional atomic cluster detachments and a sublinear wear relation are expected. Alternatively, a linear relation between the volume of detached material and the frictional work can be obtained when bulk plasticity dominants material removal at the asperity tip. Under this condition, high-shear stresses at the contact trigger the migration of misfit dislocations into the asperity bulk, causing severe plastic deformation via dislocation-mediated interface migration. This result highlights that the state of stresses at contact governs the process of material removal and wear relation at the asperity level.

关键词： Adhesion Continuum mechanics Friction Mechanical deformation Plastic deformation Plasticity surface & interfacial phenomena Wear Metals Molecular dynamics

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Perfect anomalous reflectors at optical frequencies

arXiv

引用

arXiv 2021年

作者： He, Tao Liu, Tong Xiao, Shiyi Wei, Zeyong Wang, Zhanshan Zhou, Lei Cheng, Xinbin MOE Key Laboratory of Advanced Micro-Structured Materials Shanghai200092 China Institute of Precision Optical Engineering School of Physics Science and Engineering Tongji University Shanghai200092 China Shanghai Institute of Intelligent Science and Technology Tongji University Shanghai200092 China State Key Laboratory of Surface Physics Key Laboratory of Micro and Nano Photonic Structures Ministry of Education Department of Physics Fudan University Shanghai200438 China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication Shanghai University Shanghai200444 China

Reflecting light to a pre-determined non-specular direction is an important ability of metasurfaces, which is the basis for a wide range of applications (e.g., beam steering/splitting and imaging). However, anomalous reflection with 100% efficiency has not been achieved at optical frequencies in conventional metasurfaces, due to losses and/or insufficient nonlocal control of light waves. Here, we propose a new type of all-dielectric quasi-three-dimensional subwavelength structures, consisting of multilayer films and specifically designed meta-gratings, to achieve perfect anomalous reflections at optical frequencies. A complex multiple scattering process was stimulated by effectively coupling different Bloch waves and propagating waves in the proposed meta-system, thus offering the whole meta-system the desired nonlocal control on light waves required to achieve perfect anomalous reflections. Two perfect anomalous reflectors were designed to reflect normally incident 1550 nm light to the 40° and 75° directions with absolute efficiencies higher than 99%, and were subsequently fabricated and experimentally demonstrated to exhibit efficiencies 98% and 88%, respectively. Our results pave the way towards realizing optical meta-devices with desired high efficiencies in realistic applications. Copyright © 2021, The Authors. All rights reserved.

关键词： Natural frequencies

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Strain-induced Anisotropic Terahertz Emission From a Fe(211)/Pt(110) Bilayer

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Physical Review Applied 2021年第4期15卷 044022-044022页

作者： C.Q. Liu W.-T. Lu Z.X. Wei Y.F. Miao P. Wang H. Xia Y.P. Liu F.L. Zeng J.R. Zhang C. Zhou H.B. Zhao Y.Z. Wu Z. Yuan J. Qi Department of Physics State Key Laboratory of Surface Physics Fudan University Shanghai 200433 China The Center for Advanced Quantum Studies and Department of Physics Beijing Normal University Beijing 100875 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Shanghai Ultra-precision Optical Manufacturing Engineering Research Center and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) Department of Optical Science and Engineering Fudan University Shanghai 200433 China Shanghai Research Center for Quantum Sciences Shanghai 201315 China

Terahertz (THz) emission from a Fe(211)/Pt(110) bilayer grown on MgO(110) is systematically investigated. The intensity of the emitted THz wave strongly depends on the magnetization (M) orientation, and the measured THz field is 11% larger for M||Pt[11¯0] than for M||Pt[001]. Using first-principles calculations combined with the superdiffusive spin-transport model, we reveal that the lattice distortion induced by epitaxial strain causes anisotropic behavior of the electronic conductance and spin Hall conductivity, which eventually lead to the aforementioned experimental observations. Our studies thus provide a route to modify THz emission utilizing the intrinsic crystal-structure degree of freedom.

关键词： Magneto-optical effect Optoelectronics Spintronics Strain Magnetic multilayers Optical sources & detectors First-principles calculations Terahertz techniques

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