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Graphene metalens for particle nanotracking

Photonics Research 2020年第8期8卷 1316-1322页

作者： XUEYAN LI SHIBIAO WEI GUIYUAN CAO HAN LIN YUEJIN ZHAO BAOHUA JIA Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China Centre for Translational Atomaterials(CTAM) Swinburne University of TechnologyHawthornVIC 3122Australia The Australian Research Council(ARC)Industrial Transformation Training Centre in Surface Engineering for Advanced Materials(SEAM) Swinburne University of TechnologyHawthornVIC 3122Australia

Particle nanotracking(PNT)is highly desirable in lab-on-a-chip systems for flexible and convenient multiparameter *** ultrathin flat lens is the preferred imaging device in such a system,with the advantage of high focusing performance and ***,PNT using ultrathin flat lenses has not been demonstrated so far because PNT requires the clear knowledge of the relationship between the object and image in the imaging *** a relationship still remains elusive in ultrathin flat lens-based imaging systems because they operate based on diffraction rather than *** this paper,we experimentally reveal the imaging relationship of a graphene metalens using nanohole arrays with micrometer *** distance relationship between the object and image as well as the magnification ratio is acquired with nanometer *** measured imaging relationship agrees well with the theoretical prediction and is expected to be applicable to other ultrathin flat lenses based on the diffraction *** analyzing the high-resolution images from the graphene metalens using the imaging relationship,3D trajectories of particles with high position accuracy in PNT have been *** revealed imaging relationship for metalenses is essential in designing different types of integrated optical systems,including digital cameras,microfluidic devices,virtual reality devices,telescopes,and eyeglasses,and thus will find broad applications.

关键词： glasses particle spacing

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Non-fullerene small molecule electron acceptors for high-performance organic solar cells

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Journal of Energy Chemistry 2018年第4期27卷 990-1016页

作者： Hao Lin Qiang Wang Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University

Fullerenes and their derivatives are important types of electron acceptor materials and play a vital role in organic solar cell devices. However, the fullerene acceptor material has some difficulties to overcome the intrinsic shortcomings, such as weak absorption in the visible range, difficulty in modification and high cost, which limit the performance of the device and the large-scale application of this type of acceptors. In recent years, non-fullerene electron acceptor material has attracted the attention of scientists due to the advantages of adjustable energy level, wide absorption, simple synthesis, low processing cost and good solubility. Researchers can use the rich chemical means to design and synthesize organic small molecules and their oligomers with specific aggregation morphology and excellent optoelectronic prop- erties. Great advances in the field of synthesis, device engineering, and device physics of non-fullerene acceptors have been achieved in the last few years. At present, non-fullerene small molecules based photovoltaic devices achieve the highest efficiency more than 13% and the efficiency gap between fullerenetype and non-fullerene-type photovoltaic devices is gradually narrowing. In this review, we explore recent progress of non-fullerene small molecule electron acceptors that have been developed and led to highefficiency photovoltaic devices and put forward the prospect of development in the future.

关键词： Organic solar cells Non-fullerene Electron acceptors Bulk heterojunction

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DPA-2: a large atomic model as a multi-task learner

arXiv

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arXiv 2023年

作者： Zhang, Duo Liu, Xinzijian Zhang, Xiangyu Zhang, Chengqian Cai, Chun Bi, Hangrui Du, Yiming Qin, Xuejian Peng, Anyang Huang, Jiameng Li, Bowen Shan, Yifan Zeng, Jinzhe Zhang, Yuzhi Liu, Siyuan Li, Yifan Chang, Junhan Wang, Xinyan Zhou, Shuo Liu, Jianchuan Luo, Xiaoshan Wang, Zhenyu Jiang, Wanrun Wu, Jing Yang, Yudi Yang, Jiyuan Yang, Manyi Gong, Fu-Qiang Zhang, Linshuang Shi, Mengchao Dai, Fu-Zhi York, Darrin M. Liu, Shi Zhu, Tong Zhong, Zhicheng Lv, Jian Cheng, Jun Jia, Weile Chen, Mohan Ke, Guolin Weinan, E. Zhang, Linfeng Wang, Han AI for Science Institute Beijing100080 China DP Technology Beijing100080 China Academy for Advanced Interdisciplinary Studies Peking University Beijing100871 China State Key Lab of Processors Institute of Computing Technology Chinese Academy of Sciences Beijing100871 China University of Chinese Academy of Sciences Beijing100871 China HEDPS CAPT College of Engineering Peking University Beijing100871 China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Chinese Academy of Sciences Ningbo315201 China School of Electronics Engineering and Computer Science Peking University Beijing100871 China Shanghai Engineering Research Center of Molecular Therapeutics & New Drug Development School of Chemistry and Molecular Engineering East China Normal University Shanghai200062 China Laboratory for Biomolecular Simulation Research Institute for Quantitative Biomedicine Department of Chemistry and Chemical Biology Rutgers University PiscatawayNJ08854 United States Department of Chemistry Princeton University PrincetonNJ08540 United States College of Chemistry and Molecular Engineering Peking University Beijing100871 China Yuanpei College Peking University Beijing100871 China School of Electrical Engineering and Electronic Information Xihua University Chengdu610039 China State Key Laboratory of Superhard Materials College of Physics Jilin University Changchun130012 China Key Laboratory of Material Simulation Methods & Software of Ministry of Education College of Physics Jilin University Changchun130012 China International Center of Future Science Jilin University Changchun130012 China Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Zhejiang Hangzhou310030 China Atomistic Simulations Italia

The rapid advancements in artificial intelligence (AI) are catalyzing transformative changes in atomic modeling, simulation, and design. AI-driven potential energy models have demonstrated the capability to conduct large-scale, long-duration simulations with the accuracy of ab initio electronic structure methods. However, the model generation process remains a bottleneck for large-scale applications. We propose a shift towards a model-centric ecosystem, wherein a large atomic model (LAM), pre-trained across multiple disciplines, can be efficiently fine-tuned and distilled for various downstream tasks, thereby establishing a new framework for molecular modeling. In this study, we introduce the DPA-2 architecture as a prototype for LAMs. Pre-trained on a diverse array of chemical and materials systems using a multi-task approach, DPA-2 demonstrates superior generalization capabilities across multiple downstream tasks compared to the traditional single-task pre-training and fine-tuning methodologies. Our approach sets the stage for the development and broad application of LAMs in molecular and materials simulation research. Copyright © 2023, The Authors. All rights reserved.

关键词： Multi-task learning

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Nonlinear phonon Hall effects in ferroelectrics: its existence and non-volatile electrical control

arXiv

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arXiv 2023年

作者： Luo, W. Ji, J.Y. Chen, P. Xu, Yang Zhang, L.F. Xiang, H.J. Bellaiche, L. Physics Department Institute for Nanoscience and Engineering University of Arkansas FayettevilleAR72701 United States State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China Phonon Engineering Research Center of Jiangsu Province Center for Quantum Transport and Thermal Energy Science Institute of Physics Frontiers and Interdisciplinary Sciences School of Physics and Technology Nanjing Normal University Nanjing210023 China Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China Shanghai Qi Zhi Institute Shanghai200232 China School of Physics and Electronic Science East China Normal University Shanghai200241 China

Nonlinear Hall effects have been previously investigated in noncentrosymmetric systems for electronic systems. However, they only exist in metallic systems and are not compatible with ferroelectrics since these latter are insulators, hence limiting their applications. On the other hand, ferroelectrics naturally break inversion symmetry and can induce a non-zero Berry curvature. Here, we show that a non-volatile electric-field control of heat current can be realized in ferroelectrics through the nonlinear phonon Hall effects. More precisely, based on Boltzmann equation under the relaxation-time approximation, we derive the equation for nonlinear phonon Hall effects, and further show that the behaviors of nonlinear phonon (Boson) Hall effects are very different from nonlinear Hall effects for electrons (Fermion). Our work provides a route for electric-field control of thermal Hall current in ferroelectrics. Copyright © 2023, The Authors. All rights reserved.

关键词： Boltzmann equation

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Grain growth kinetics and microstructural evolution in novel cerium-doped zirconia-zirconate composites with hypoeutectic composition

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Journal of Alloys and Compounds 2025年 1036卷

作者： Zhi-Gang Wang Lin Cui Zhi-Hao Ni Peng-Bo Li Zhang-Hao Wang Reng-Qian Liu Hui-Chong Wang Mei-Qi Xue Wen-Yuan Mi Yong-He Zhang Xuan-Li Wang Min Xie Xi-Wen Song Ren-De Mu Jia-Hu Ouyang School of Materials Science and Engineering Inner Mongolia University of Science and Technology Baotou 014010 China Inner Mongolia Key Laboratory of Advanced Ceramic Material and Devices Inner Mongolia University of Science and Technology Baotou 014010 China Key Laboratory of Green Extraction & Efficient Utilization of Light Rare-Earth Resources (Inner Mongolia University of Science and Technology) Ministry of Education Baotou 014010 China School of Mechanical Engineering Inner Mongolia University of Science and Technology Baotou 014010 China AECC Beijing Institute of Aeronautical Materials Beijing 100095 China School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China

A novel La 2 (Zr 1- x Ce x ) 2 O 7 –7.5 mol.% Sc 2 O 3 -0.5 mol.% Y 2 O 3 co-stabilized ZrO 2 (SYSZ) composites with hypoeutectic composition were elaborately designed for potential applications in thermal barrier coatings (TBCs) operating above 1400 °C. This study initially explores the effects of Ce-doping on the phase structure, microstructure, and mechanical properties of the composites, with particular emphasis on high-temperature microstructural stability and grain growth kinetics. Experimental results reveal that these composites exhibit mixed t / c -zirconia and pyrochlore zirconate phases. Compared with La 2 Zr 2 O 7 , the composites exhibit superb Vickers hardness of 11.4 GPa combined with an excellent indentation toughness of 2.8 MPa·m 1/2 could be achieved. La 2 (Zr 0.3 Ce 0.75 ) 2 O 7 -SYSZ exhibits the smallest grain growth, ranging from 0.99 to 2.75 μm after being thermally exposed for 300 h at 1450 °C. The grain growth kinetics with a growth exponent ( n ) increasing approximately from 2 to 4, indicating a transition in the grain-growth mechanism, which shifts from lattice-diffusion-controlled drag to boundary-diffusion-controlled drag. Our results demonstrate La 2 (Zr 1- x Ce x ) 2 O 7 -SYSZ composites are potential candidates for high -temperature TBC applications.

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Proactively introducing defects and forming twinning and low angle grain boundaries in the γ phase to particularly improve the 900 °C tensile strengths of theTi-47Al-6Nb-0.1C-1.6Ta alloy

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Materials Science and engineering: A 2025年 940卷

作者： Xiaokang Yang Hongze Fang Lingyan Zhou Kexuan Li Xianfei Ding Yong Zhang Ruirun Chen National Key Laboratory for Precision Hot Processing of Metals Harbin Institute of Technology Harbin Heilongjiang 150001 PR China Zhengzhou Research Institute Harbin Institute of Technology Zhenzhou Henan 450000 PR China Cast Titanium Alloy R&D Center Beijing Institute of Aeronautical Materials Beijing 100095 PR China Heilongjiang Province Key Laboratory of Advanced Mg&Al Alloys Casting and Engineering Application Harbin Heilongjiang 150066 PR China

Actively introducing different types of defects into γ phase with lower formation energy is an effective method to improve the mechanical properties of TiAl alloys at room and high temperatures. Ta was added in Ti-47Al-6Nb-0.1C alloy (TiAl-0Ta alloy), and defect types, microstructure, mechanical properties at room and 900 °C, and related mechanisms were studied. Results show that four kinds of surface defects are formed in the γ phase between lamellar colonies after adding Ta, including stacking faults (SFs), twin boundaries (TB), low angle grain boundaries (LAGB) and 120° rotation boundaries (RB). Ta promotes SFs generating by reducing the stacking fault energy. Insertion of extrinsic SF changes the stacking order to generate twin. The continuous generation of SFs leads to the widening of twins. Ta substitute Al will form lattice distortion and vacancies. Vacancies are filled by Al atoms to form edge dislocations, resulting in LAGB. The substitution also reduces the formation energy of the RB to form that. Compressive strength and strain of Ti-47Al-6Nb-0.1C-1.6Ta alloy (TiAl-1.6Ta alloy) reached 2606 MPa and 40.6 %, and the 900 °C tensile strength and elongation of alloy reached 550.2 MPa and 10.8 %. The edge dislocation at LAGB, elastic stress field at TB and RB increase the critical resolved shear stress of dislocation and hinder dislocation slip. The SFs decompose the dislocation into partial dislocations to consume its energy.

关键词： Tenacity

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Strengthening low-angle grain boundaries by twinning grids: Improving the ability of γ phase to store and block dislocations in TiAl alloy

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Journal of Alloys and Compounds 2025年 1034卷

作者： Xiaokang Yang Hongze Fang Lingyan Zhou Xianfei Ding Yong Zhang Ruirun Chen National Key Laboratory for Precision Hot Processing of Metals Harbin Institute of Technology Harbin Heilongjiang 150001 PR China Zhengzhou Research Institute Harbin Institute of Technology Zhenzhou Henan 450000 PR China Cast Titanium Alloy R&D Center Beijing Institute of Aeronautical Materials Beijing 100095 PR China Heilongjiang Province Key Laboratory of Advanced Mg&Al Alloys Casting and Engineering Application Harbin Heilongjiang 150066 PR China

The twin grid structure enhances low-angle grain boundaries (LAGBs) in the γ phase, effectively storing and hindering dislocations to improve the high-temperature properties of TiAl alloys. Hf was added to Ti-47Al-6Nb-0.1C-1.6Ta alloy and related mechanisms were studied. The results indicate that the addition of Hf promotes the formation of a Hf-enriched γ phase (with an L 10 structure, defined as the γ Hf phase) in the TiAl alloy. The γ Hf phase is surrounded by a γ phase containing twin grids (with an L 10 structure, defined as the γ n phase). The γ Hf and γ n phases exhibit close orientations with LAGBs at their interfaces. The Hf and Al-rich regions in the α phase preferentially transform into the γ Hf phase, with α grain boundary migration making γ Hf either within the α parent phase or at its boundaries. The residual α phase around γ Hf undergoes multiple twinning on {111} and {100} planes, ultimately resulting in the formation of the γ n phase with twin grids. The 900 ℃ tensile strength and elongation of the Hf-added TiAl alloy reach 620.8 ± 23.1 MPa and 7.27 ± 0.6 %, respectively. The twin grids in the γ n phases uniformly accommodate dislocations, while the substantial lattice distortion and strong atomic bonding in γ Hf impede dislocation activation, resulting in the absence of dislocations within γ Hf . Consequently, the LAGB between γ n and γ Hf effectively hinders dislocations originating from the twin grids, thereby enhancing the alloy's high-temperature strength.

关键词： Tensile strength

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Effect of Two-Stage Cryorolling and Aging on Microstructure and Properties of Cu-1Cr-0.1Zr Alloy

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JOM 2025年

作者： Fan, Zhen Pan, Xuhao Chu, Zhuqi Wei, Wei Wei, Kunxia Alexandrov, Igor V. An, Xulong Wang, Dandan Liu, Xiangkui School of Materials Science and Engineering Changzhou University Changzhou213164 China CNPC-CZU Innovation Alliance Jiangsu Key Laboratory of Materials Surface Science and Technology Advanced Functional Materials of Jiangsu Joint Laboratory for International Cooperation Changzhou University Changzhou213164 China Department of Materials Science and Physics of Metals Ufa University of Science and Technology 12 K. Marx Ufa450008 Russia

Microstructure evolution, mechanical properties and electrical conductivity of Cu-1Cr-0.1Zr alloy in different states during two-stage cryorolling and aging were investigated. Compared to single-stage aging, intermediate aging promotes the emergence of GP zones in the alloy, accelerating the precipitation of high-density nano-precipitates. Because the intermediate aging precipitated phase has a pinning effect, more nano-twins and dislocation pile-ups were produced, which effectively improved the tensile strength of the alloy. The dense dislocations produced by a second cryorolling provide more nucleation sites, which makes precipitated phases fine and uniform and ensures the lower resistivity of the alloy. After the two-stage cryorolling and aging, the alloy has the optimal properties with a tensile strength of 648.5 MPa, an electrical conductivity of 77% IACS and elongation of 9.4%. The energy-saving and time-efficient two-stage cryorolling and aging provide a feasible way to balance the strength and conductivity of Cu-1Cr-0.1Zr alloy. © The Minerals, Metals & Materials Society 2025.

关键词： Tensile strength

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Designed Additive to Regulated Crystallization for High Performance Perovskite Solar Cell

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Angewandte Chemie 2024年第30期136卷

作者： Yang Cao Nan Yan Mingzi Wang Danyang Qi Jiafan Zhang Xin Chen Ru Qin Fengwei Xiao Guangtao Zhao Yucheng Liu Xuediao Cai Kui Zhao Shengzhong (Frank) Liu Jiangshan Feng Laboratory of Applied Surface and Colloid Chemistry Ministry of Education School of Materials Science and Engineering Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials Shaanxi Normal University Xi'an 710119 Shaanxi China School of Physics Northwest University Xi'an 710069 P. R. China Key Laboratory of Photoelectric Conversion and Utilization of Solar Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences 457 Zhongshan Road Dalian 116023 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

It is a crucial role for enhancing the power conversion efficiency (PCE) of perovskite solar cells (PSCs) to prepare high-quality perovskite films, which can be achieved by delaying the crystallization of perovskite film. Hence, we designed difluoroacetic anhydride (DFA) as an additive to regulating crystallization process thus reducing defect formation during perovskite film formation. It was found DFA reacts with DMSO by forming two molecules, difluoroacetate thioether ester (DTE) and difluoroacetic acid (DA). The strong bonding DTE ⋅ PbI 2 and DA ⋅ PbI 2 retard perovskite crystallization process for high-quality film formation, which was monitored through in situ UV/Vis and PL tests. By using DFA additives, we prepared perovskite films with high-quality and low defects. Finally, a champion PCE of 25.28 % was achieved with excellent environmental stability, which retained 95.75 % of the initial PCE after 1152 h at 25 °C under 25 % RH.

关键词： Solar cells Perovskite FAPbI3 Additive engineering Crystallization regulation

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Modifying the aluminum current collector/active material layer interface through physical vapor deposition technology to achieve a high-performance sulfur cathode

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Electrochimica Acta 2025年 533卷

作者： Xuliang Fan Fang Chen Gaowei Zhang Liang Zhan Xunfu Zhou Xiaosong Zhou Ji Cheng Ding Jing Li Jun Zheng School of Chemistry and Chemical Engineering Key Laboratory of Clean Energy Materials Chemistry of Guangdong Higher Education Institutes Research Center for Clean Energy Materials Chemical Engineering Technology of Guangdong Lingnan Normal University Zhanjiang 524048 PR China PCFM Lab School of Chemistry Sun Yat-sen University Guangzhou 510275 PR China Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials Ministry of Education Anhui University of Technology Maanshan 243002 PR China School of Chemical Engineering and Light Industry Guangdong University of Technology Guangzhou 510006 PR China

Effectively restraining lithium polysulfides diffusion remains a critical challenge for designing advanced sulfur cathodes. In this study, we report a simple and scalable approach to modify the interface between the current collector and the active material layer by depositing CrN onto the Al collector via physical vapor deposition (PVD). The CrN coating offers high electrical conductivity and excellent LiPSs adsorption/catalysis properties, enabling both efficient electron conduction and accelerated reaction kinetics between elemental sulfur and Li 2 S. Consequently, even after 500 cycles, the sulfur cathode with the CrN-modified Al collector can deliver a high-capacity retention of 72.9 %, which is significantly higher than that of the unmodified Al collector-based cathode (44.3 %). The superior electrochemical performance demonstrates that PVD-enabled interface modification of the current collector is an effective strategy for advancing Li-S batteries.

关键词： Lithium sulfur batteries

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