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Research on Highly Anti-Humidity and Selective NO2 Detection Based on GaN/MoO3 N-N Heterojunction

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SSRN 2024年

作者： Hong, Yutao Han, Dan Li, Donghui He, Xiuli Zhao, Li Wang, Weidong Li, Hongwei Sang, Shengbo Liang, Hua Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Bioengineering Research Center Medical Innovation Research Division Chinese PLA General Hospital Beijing China Shanxi Academy of Medical Sciences China

Effective and accuratedetection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by the in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that at the operating temperature of 225 °C, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a low theoretical limit of detection (0.78 ppb) for NO2, which is significantly improved compared with the limit of detection of MoO3 (5 ppm). Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor also possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70 % RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3, and the heterojunction effect between them. This work provides a way to improve the efficiency and anti-humidity ability of real-time monitoring of NO2 for the sensors of MoO3-based composite. © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

High cycle fatigue limit prediction of machining foreign object damaged TC17 titanium specimen based on the theory of critical distances

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Scientific Reports 2025年第1期15卷 1-14页

作者： Kainan Lu Wei Chen Yibo Shang Chen Wang Bin Li Xiaosheng Zhang Liucheng Zhou Lingfeng Wang Zhenhua Zhao Jiangsu Province Key Laboratory of Aerospace Power System College of Energy and Power Engineering Nanjing University of Aeronautics and Astronautics Nanjing 210000 China Fundamentals Department Air Force Engineering University Xi’an 710051 China National Key Lab of Aerospace Power System and Plasma Technology Air Force Engineering University Xi’an 710038 China Jiangsu Aero-XY Technology Co. Ltd Wuxi 214000 China State Key Laboratory of Mechanics and Control for Aerospace Structures Nanjing University of Aeronautics and Astronautics Nanjing 210000 China

Aircraft engine fans and compressor blades are inevitably subject to external damage during service. It’s an important work to predict the high cycle fatigue limit of foreign object damaged blades. In this paper, machining aerofoil specimens were manufactured to simulate the foreign object damaged blade, and the high cycle fatigue limit of machining foreign object damaged TC17 titanium aerofoil specimen were tested at 3 × 107cycles, and a high cycle fatigue limit prediction model of machining foreign object damaged TC17 titanium aerofoil specimen was built based on the theory of critical distances, and compared with the Peterson model. The prediction error is 9.56 ± 6.78% for theory of critical distance model and 59.76 ± 16.93% for Peterson model. The accuracy of fatigue limit prediction on notched samples using theory of critical distance model is much higher than that of Peterson model, and the theory of critical distances method model is more efficient to evaluate the fatigue strength of notched blade.

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Tailoring intermetallics via cellular boundary enables strong yet ductile property: An example in Gd-enriched neutron shielding alloys

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Scripta Materialia 2025年 265卷

作者： Hou, Kunlei He, Suyun Wei, Boxin Cui, Luqing Zang, Yihu Zhao, Peng Liang, Tian Ma, Guangcai Ma, Yingche Institute of Metal Research Chinese Academy of Sciences Shenyang110016 China CAS Key Laboratory of Nuclear Materials and Safety Assessment Institute of Metal Research Chinese Academy of Sciences Shenyang110016 China Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology School of Materials Science and Engineering Hebei University of Technology Tianjin300401 China National Key Lab of Aerospace Power System and Plasma Technology Xi'an Jiaotong University Xi'an710049 China School of Mechanical Engineering Xi'an Jiaotong University Xi'an710049 China Department of Physics and Astronomy University of California Irvine IrvineCA92697 United States

Gd is a highly effective element for neutron shielding, but its minimal solubility promotes Gd-rich intermetallics that degrade alloy properties if not properly controlled. This study introduces an innovative approach to refine these intermetallics to a sub-micron scale and achieve a uniform distribution by leveraging the cellular boundaries formed during laser powder bed fusion. These cellular boundaries, combined with the tailored intermetallics, act as "modulators" that effectively impede plastic deformation while permitting dislocation motion, resulting in a satisfying strength-ductility synergy. The findings offer a promising direction for incorporating elements with low solubility but functional properties by tailoring intermetallics through cellular boundary engineering. © 2025 The Author(s)

关键词： Intermetallics

controllable Electrical Characteristic of Ti3c2t2/Mos2 (T=Oh, F, O) Interfaces for High Performance Electronics: Insights from First-Principles

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SSRN 2023年

作者： Zhang, Qiang Liu, Yan Zhang, Riguang Lv, Bohan Hao, Runfang Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of The Ministry of Education Taiyuan University of Technology Shanxi Taiyuan030024 China School of Software Taiyuan University of Technology Shanxi Taiyuan030024 China State Key Laboratory of Clean and Efficient Coal Utilization China Laboratory of Aerospace Servo Actuation and Transmission Beijing Institute of Precision Mechatronics and Controls Beijing100000 China

Two-dimensional (2D) semiconductors have shown competitive potential for applications into beyond-silicon electronics. However, the controllable electrical characteristic of metal-semiconductor interfaces is still a challenge for high performance electronics due to Fermi level pinning. To explore Ti3C2T2/MoS2 (T= OH, F, O) for high performance electronics, the vertical electric field and interlayer distance are adopted here to regulate the electrical characteristic of interfaces based on the first-principles calculations. Though this, the electrical characteristic of Ti3C2O2/MoS2 and Ti3C2F2/MoS2 are more sensitive to electric field or interlayer distance than that of Ti3C2(OH)2/MoS2. Especially, the negative electric field with larger than -0.2 V/Å makes Ti3C2O2/MoS2 interface change from p-type Schottky to n-type Schottky contact. Furthermore, the Ti3C2O2/MoS2 interface can not only switch from p-type Schottky to n-type Schottky contact, but also from p-type Schottky to n-type Ohmic contact by varying interlayer distance. Moreover, the tunneling barriers of all interfaces are more sensitive to interlayer distance than to electric field. This work provides vital insights for high-performance electronics of Ti3C2T2/MoS2 (T=OH, F, O) in experiments. © 2023, The Authors. All rights reserved.

关键词： Electric fields

AU Nanoparticles Decorated Gan Nanoflowers with Enhanced Nh3 Sensing Performance at Room Temperature

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SSRN 2023年

作者： Han, Dan Chen, Yi Li, Donghui Shi, Jiexu Wang, Hongtao He, Xiuli Zhao, Li Wang, Weidong Sang, Shengbo Ji, Jianlong Shanxi Key Laboratory of Micro Nano Sensors and Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System The Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Bioengineering Research Center Medical Innovation Research Division Chinese PLA General Hospital Beijing China Shanxi Research Institute of 6D Artificial Intelligence Biomedical Science China

Surface modification with noble metal is considered as an effective strategy to enhance sensing performance of semiconductor gas sensors. In this work, gold nanoparticles (Au NPs) decorated Gallium Nitride nanoflowers (Au-GaN NFs) have been synthesized successfully by a feasible hydrothermal method combined with high temperature nitridation and followed by in-situ reduction process. The characterizations of the structure and morphology of as-obtained Au-GaN NFs indicated that the Au NPs were successfully loaded on the surface of GaN. The excellent gas sensing performance was observed for GaN of 2 mol% Au loaded, including the high response (86.8%) to 100 ppm NH3 with fast response/recovery time (41 s/169 s) at room temperature, low theoretical limit of detection (72 ppb), good stability and selectivity. Besides, the influence of humidity on the performance of sensors was explored, where the response can be reached 56.5% towards 100 ppm NH3 under 70% RH. The improvement of the sensing performance of Au-GaN NFs sensor can be attributed to the combined action of chemical and electronic sensitization of Au NPs. This work provides a candidate of Au-GaN NFs for the development of wireless sensing system in NH3 monitoring. © 2023, The Authors. All rights reserved.

关键词： Nanoflowers

Gan/Moo3 N-N Heterojunction Based Anti-Humidity Gas Sensor for No2 Real-Time Monitoring

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SSRN 2024年

作者： Hong, Yutao Han, Dan Duan, Qi Li, Donghui He, Xiuli Li, Bing Liang, Hua Li, Hongwei Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Integrated Circuits Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Province Key Laboratory of Oral Diseases Prevention and New Materials Shanxi Medical University School and Hospital of Stomatology Shanxi Taiyuan030001 China Shanxi Province Cancer Hospital Shanxi Hospital Affiliated to Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Affiliated to Shanxi Medical University Taiyuan030000 China University of Chicago United States

Effective and accurate detection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that, at the operating temperature of 225°C, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a 25-fold lower limit of detection for NO2 than that of MoO3, with a reduction of baseline resistance drift. Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70% RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3 and the heterojunction effect between them. In addition, we constructed a real-time NO2 monitoring device based on the gas-sensing characteristic of GaN/MoO3, which realizes the alarm of excessive concentrations of NO2. Overall, this work provides a way to improve the ability of NO2 monitoring for the sensors of MoO3-based composites. © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

Gan/Moo3 N-N Heterojunction Based Anti-Humidity Gas Sensor for No2 Real-Time Monitoring

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SSRN 2024年

作者： Hong, Yutao Han, Dan Duan, Qi Li, Donghui He, Xiuli Li, Bing Liang, Hua Li, Hongwei Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Integrated Circuits Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Province Key Laboratory of Oral Diseases Prevention and New Materials Shanxi Medical University School Hospital of Stomatology Shanxi Taiyuan030001 China Shanxi Province Cancer Hospital Shanxi Hospital Affiliated to Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Affiliated to Shanxi Medical University Taiyuan030000 China University of Chicago United States

Effective and accurate detection of NO2 gas is crucial for protecting the environment and public health. In this work, balsam pear-like GaN/MoO3 porous nanosheets (GaN/MoO3) composites were synthesized by in situ assembling, the hydrothermal method, and the nitridation process to detect NO2. A series of characterization methods were used to manifest the successful synthesis and to analyze the morphology and elemental composition features of GaN/MoO3 composites. The results of the gas-sensing experiments show that, at the operating temperature of 225℃, the gas sensor based on the optimal ratio of GaN/MoO3 composites exhibits a 25-fold lower limit of detection for NO2 than that of MoO3, with a reduction of baseline resistance drift. Further, the response value of the sensor based on GaN/MoO3 composites to 200 ppm NO2 (44.74) is 4.36 times higher than that of the sensor based on pure GaN, with an improvement in stability. Meanwhile, the sensor possessed excellent repeatability, selectivity, stability, and splendid anti-humidity ability at 15-70% RH. The improved gas-sensing performance is ascribed to the unique microstructure of both GaN and MoO3 and the heterojunction effect between them. In addition, we constructed a real-time NO2 monitoring device based on the gas-sensing characteristic of GaN/MoO3, which realizes the alarm of excessive concentrations of NO2. Overall, this work provides a way to improve the ability of NO2 monitoring for the sensors of MoO3-based composites. © 2024, The Authors. All rights reserved.

关键词： III-V semiconductors

Distribution of Dislocation-Twin Interaction in Twip Steel Under Different Loading Modes

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SSRN 2022年

作者： Guo, Xiangru Mao, Ningdong Sun, Chaoyang Wang, Chunhui Cui, Yinan Xiong, Zhiping Tianjin Key Laboratory for Advanced Mechatronic System Design and Intelligent Control School of Mechanical Engineering Tianjin University of Technology Tianjin300384 China National Demonstration Center for Experimental Mechanical and Electrical Engineering Education Tianjin University of Technology Tianjin300384 China School of Mechanical Engineering University of Science and Technology Beijing Beijing100083 China Applied Mechanics Lab School of Aerospace Engineering Tsinghua University Beijing100084 China National Key Laboratory of Science and Technology on Materials under Shock and Impact Beijing Institute of Technology Beijing100081 China

The tension-compression asymmetry and orientation effect of dislocation-twin boundary (TB) interactions in twinned TWIP steels were investigated using the discrete dislocation dynamics simulations and Schmid's law. The different types of dislocations dominate the TB migration in the twinned TWIP steel during tension and compression with the same loading orientation, and the asymmetric dislocation reactions at TB were attributed to the different leading partials produced after the dissociation of dislocation under different loading modes (tension or compression). Moreover, the complex dislocation-TB interactions, such as dislocations traversing TB, cross slip, dissociation, pile up and so on, were determined by considering the orientation effect of dislocation activation and the asymmetry of dislocation dissociation. The research advances the understanding of asymmetric behavior of twin and its influence on the macro hardening in plastic deformation of TWIP steels. © 2022, The Authors. All rights reserved.

关键词： Dissociation

A Practical and High-Performance Nitrogen Dioxide Gas Sensor that Can Be Rapidly Mass-Produced Based on Gallium Nitride Quantum Dots Film

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SSRN 2022年

作者： Han, Dan Chen, Yi Li, Donghui Dong, Hailiang Xu, Bingshe Sang, Shengbo He, Xiuli Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Information and Computer Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan030024 China Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Ministry of Education Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Research Institute of 6D Artificiat Intelligence Biomedical Science Taiyuan030024 China

Gallium nitride (GaN) has some challenges for gas sensing, such as high detection lower limit (LOD) or controlling the epitaxy of nanostructures. To address these issues, we exclusively designed a device to enhance the gas interaction capabilities of GaN quantum dots (QDs) film fabricated by metal-organic chemical vapor deposition (MOCVD). The GaN QDs film gas sensor exhibited a low LOD (5 ppb) to NO2 at room temperature (RT), which has much superior gas performance than other GaN-based sensors. The results manifest that many ultra-small QDs around 2 nm in diameter are stacked to form QDs of larger size, and confirm the existence of vacancies. The sensor displays a ultra-high electron mobility of 1237.37 cm2 V−1s−1, demonstrate that great shallow donor impurities in GaN QDs film that ionize easily at RT, which is greatly beneficial for gas sensing. The sensing mechanisms were analyzed based on its abundant active sites, ultrahigh carrier mobility, high surface energy and chemical activity, grain boundary barrier and good electrical conductivity. Moreover, the sensor processes high selectivity, repeatability, stability and reusability based on MOCVD technology which can realize precise control of structure, morphology and surface energy level, which is expected to achieve rapid industrialization. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride