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IEEE Spectrum 2006年第11期43卷 49-58页

作者： Stephen Cass Department of Electrical and Computer Engineering Analog and Mixed-Signal Center Texas A&M University College Station TX USA

Presents information on the latest computer and engineering technologies and products.

关键词： DVD Ethernet networks Home automation Hard disks Plugs Linux Satellite broadcasting Costs IP networks Modems

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An 11-Band 3.4 to 10.3 GHz MB-OFDM UWB Receiver in 0.25/spl mu/m SiGe BiCMOS

An 11-Band 3.4 to 10.3 GHz MB-OFDM UWB Receiver in 0.25/spl ...

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Symposium on VLSI Circuits

作者： A. Valdes-Garcia C. Mishra F. Bahmani J. Silva-Martinez E. Sanchez-Sinencio Analog & Mixed Signal Center Department of Electrical and Computer Engineering Texas A and M University College Station TX USA

An 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB is implemented in a 0.25mum BiCMOS process. It includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The packaged IC mounted on FR-4 substrate provides maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply

关键词： Silicon germanium Germanium silicon alloys BiCMOS integrated circuits Radio frequency Baseband Circuit optimization Circuit testing Wideband Filters Bonding

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A carrier frequency generator for multi-band UWB radios

A carrier frequency generator for multi-band UWB radios

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IEEE Symposium on Radio Frequency Integrated Circuits (RFIC)

作者： C. Mishra A. Valdes-Garcia E. Sanchez-Sinencio J. Silva-Martinez Analog and Mixed Signal Center Electrical and Computer Engineering Department Texas A and M University College Station TX USA

A fast-switching carrier frequency generator for multi-band UWB radios is presented. It generates 11 carrier frequencies in quadrature in the range of 3.7-10GHz from a single frequency source. The architecture consists of a series of dividers, single sideband mixers with filtering and multiplexers. The IC is implemented in a 0.25mum SiGe BiCMOS technology and measured in a QFN package. With an active area of 2.2 times 1.9mm 2 the system draws 75mA of current from a 3V supply

关键词： Mixers Frequency conversion Filtering Multiplexing BiCMOS integrated circuits Amplitude modulation RF signals analog computers signal generators computer architecture

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An integrated frequency response characterization system with a digital interface for analog testing

An integrated frequency response characterization system wit...

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作者： Valdes-Garcia, Alberto Hussien, Faisal Abdel-Latif Silva-Martínez, José Sánchez-Sinencio, Edgar IEEE Analog and Mixed Signal Center Electrical Engineering Department Texas AandM University College Station TX 77843-3128 United States Wireless System Design Group IBM T. J. Watson Research Center Yorktown Heights NY 10598 United States

Current and future integrated systems demand cost-effective test solutions. In response to that need, this work presents a very compact mixed-signal test system. It performs the characterization of the magnitude and phase responses over frequency at multiple nodes of an analog circuit. The control inputs and output of this system are digital, enabling the test of the analog components in a system-on-chip (SoC) or system-in-package (SiP) through a low-cost digital automatic test equipment. Robust and area-efficient building blocks are proposed for the implementation of the test system, including a linearized analog multiplier for accurate magnitude and phase detection, a wide tuning range voltage-controlled oscillator and a low-power algorithmic analog-to-digital converter. Their individual design considerations and performance results are presented. A complete prototype in TSMC CMOS 0.35-μm technology employs only 0.3 mm2 of area. The operation of this test system is demonstrated by performing frequency response characterizations up to 130 MHz at various nodes of two different fourth-order continuous-time filters integrated in the same chip. © 2006 IEEE.

关键词： Frequency response

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Frame Enclosed Resonator for Miniature Oven Controlled Crystal Oscillator (OCXO)

Frame Enclosed Resonator for Miniature Oven Controlled Cryst...

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IEEE International Frequency Control Symposium

作者： Hyunsoo Kim Thomas Jackson Jaehyun Lim Kyusun Choi David Kenny Center for Thin Film Devices and Materials Research Institute Department of Electrical Engineering Pennsylvania State University University Park PA USA Mixed Signal Chip Design Laboratory Computer Science and Engineering Pennsylvania State University University Park PA USA Eastern Development Center SaRonix State College PA USA

This paper reports progress on a frame enclosed resonator (FER) integrated with a miniature OCXO. This new approach for a quartz crystal resonator with small active area and low stress was fabricated and directly integrated between a CMOS control chip as a sandwich structure. Integrating an FER on a CMOS chip provides a number of advantages including small size, low power, and reduced warm up time due to smaller volume and surface area

关键词： Ovens Voltage-controlled oscillators Crystalline materials Temperature control Conducting materials Voltage control Thermal conductivity Thermal stresses Diffusion bonding Gold

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Miniature Oven Controlled Crystal Oscillator (OCXO) on a CMOS Chip

Miniature Oven Controlled Crystal Oscillator (OCXO) on a CMO...

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IEEE International Frequency Control Symposium

作者： Jaehyun Lim Kyusun Choi Hyunsoo Kim Thomas Jackson David Kenny Mixed Signal Chip Design Laboratory Computer Science and Engineering Pennsylvania State University University Park PA USA Center for Thin Film Devices and Materials Research Institute Department of Electrical Engineering Pennsylvania State University University Park PA USA Eastern Development Center SaRonix State College PA USA

This paper presents a one-chip temperature control for an OCXO application with a quartz crystal directly mounted on a CMOS chip. The design of this chip can reduce the size of an entire OCXO package dramatically since no separate PCBs are required for the oscillator, controller, and resonator. The reduced package size leads to less power consumption (303 mW at steady state) and a shorter warm-up time (190 seconds at room temperature). The temperature and frequency stabilities are 0.17 degC and 0.7 ppm respectively in the 0 degC to 60 degC external temperature range

关键词： Ovens Oscillators Packaging Temperature distribution Temperature control Size control Energy consumption Steady-state Frequency Stability

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High speed systems engineering: A new trent in electrical and computer engineering

High speed systems engineering: A new trent in electrical an...

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2005 ASEE Annual Conference and Exposition: The Changing Landscape of engineering and Technology Education in a Global World

作者： Mina, Mani Weber, Robert Somani, Arun K. VanderHorn, Nathan Bahuguna, Rashmi High Speed Systems Engineering Laboratory Department of Electrical and Computer Engineering Iowa State University United States Iowa State University United States Analog and Mixed-Signal VLSI Design Center United States

The main ideas and objectives of High Speed Systems engineering (HSSE) are presented. HSSE is being used as integrating pedogogical and research platforms to train modern engineers and future researchers. The newly developed classes and the changes made in the curriculum is enhancing interaction between faculty, graduate and undergraduate students. A study shows that HSSE has been successful in encouraging students from all undergraduate levels to participate in learning and experimenting, also are encouraged to be involved in research and graduate studies.

关键词： Systems engineering

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RF bandpass filter design using capacitive degeneration

RF bandpass filter design using capacitive degeneration

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Midwest Symposium on Circuits and Systems (MWSCAS)

作者： A. Valdes-Garcia J. Silva-Martinez E. Sanchez-Sinencio Analog and Mixed-Signal Center Electrical Engineering Department Texas A and M University College Station TX USA

This work proposes the use of a capacitively degenerated transconductor to construct an RF bandpass filter. The fundamental theoretical elements for the application of this technique are provided. First, the impedance seen from the source/emitter of a transistor with capacitive degeneration and an LC tank connected at its gate/base is analyzed. The conditions under which this impedance exhibits a large value in a narrow bandwidth are obtained showing good agreement between theoretical and simulated results. A general RF filter structure based on the analyzed active resonant cell is introduced and described with a macromodel. A sample 5.2 GHz bandpass filter is designed for a SiGe BiCMOS 0.25 mum process. Simulation results for the designed RF filter show S21 > 6dB, Q > 20 consuming 1 mA from a 2.5 V supply

关键词： Radio frequency Band pass filters Impedance Bipolar transistors Voltage-controlled oscillators Resonance BiCMOS integrated circuits Inductors Equations Electronic mail

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A novel 1.5 V CMFB CMOS down-conversion mixer design for IEEE 802.11 A WLAN systems

A novel 1.5 V CMFB CMOS down-conversion mixer design for IEE...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： Xuezhen Wang R. Weber Degang Chen Analog and Mixed Signal VLSI Design Center Department of Electrical and Computer Engineering Iowa State University USA

This paper presents a 5.8 GHz low voltage down-conversion mixer design integrated in a TSMC 0.18 /spl mu/m CMOS process. The proposed method features that an RF input stage converts the RF input voltage to current, which is coupled to the core of Gilbert Cell using current mirror. This implementation eliminates the current source transistor at bottom and furthermore reduces the supply voltage. Common-mode feedback is used for the active load of the mixer. The LO frequency is at 5.6 GHz. The designed mixer requires only a 1.5 V supply voltage and consumes 11.78 mW DC power. At 5.8 GHz, this mixer has single-sideband noise figure (SSB NF) of 13.6 dB, with input return loss of -18 dB, with output return loss of -26.4 dB, Third-order Input Intercept Point (IIP3) of -10.66 dBm, and conversion gain of 10.4 dB.

关键词： Wireless LAN Radio frequency Mixers Low voltage CMOS process Mirrors Feedback Noise figure Amplitude modulation Noise measurement

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A novel low-voltage low-power 5.8 GHz CMOS down-conversion mixer design

A novel low-voltage low-power 5.8 GHz CMOS down-conversion m...

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IEEE Radio and Wireless Symposium (RWS formerly RAWCON)

作者： Xuezhen Wang R. Weber Analog and Mixed Signal VLSI Design Center Department of Electrical and Computer Engineering Iowa State University USA

This paper presents a 5.8 GHz low voltage and low power down-conversion mixer design integrated in a TSMC 0.18 /spl mu/m CMOS process. The proposed method features that an RF input stage converts the RF input voltage to current, which is coupled to the core of Gilbert Cell using current source transistor at bottom and furthermore reduces the supply voltage. The LO frequency is at 5.6 GHz. The designed mixer requires only a 1.5 V supply voltage and consumes 6.89 mW DC power. At 5.8 GHz, this mixer has single-sideband noise figure (SSB NF) of 14.3 dB, with input return loss of -18.6 dB, third-order input intercept point (IIP3) of -2.94 dBm, and conversion gain of 7 dB.

关键词： Mixers signal design Low voltage Radio frequency CMOS process Gain CMOS technology Wireless LAN Costs CMOS integrated circuits

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