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Generating 3D TOF-MRA volumes and segmentation labels using generative adversarial networks

Medical Image Analysis 2022年 78卷 102396-102396页

作者： Subramaniam, Pooja Kossen, Tabea Ritter, Kerstin Hennemuth, Anja Hildebrand, Kristian Hilbert, Adam Sobesky, Jan Livne, Michelle Galinovic, Ivana Khalil, Ahmed A. Fiebach, Jochen B. Frey, Dietmar Madai, Vince I. CLAIM - Charité Lab for AI in Medicine Charité Universitätsmedizin Berlin Germany Department of Computer Engineering and Microelectronics Computer Vision & Remote Sensing Technical University Berlin Berlin Germany Berlin Germany Bernstein Center for Computational Neuroscience Berlin Germany Institute for Imaging Science and Computational Modelling in Cardiovascular Medicine Charité Universitätsmedizin Berlin Berlin Germany Fraunhofer MEVIS Max-von-Laue-Str. 2 Bremen Germany Department VI Computer Science and Media Beuth University of Applied Sciences Berlin Germany Johanna-Etienne-Hospital Neuss Germany Centre for Stroke Research Berlin Charité Universitätsmedizin Berlin Berlin Germany Department of Neurology Max Planck Institute for Human Cognitive and Brain Sciences Leipzig Germany Mind Brain Body Institute Berlin School of Mind and Brain Humboldt University Berlin Berlin Germany Berlin Institute of Health Berlin Germany School of Computing and Digital Technology Faculty of Computing Engineering and the Built Environment Birmingham City University Birmingham United Kingdom QUEST-Center for Transforming Biomedical Research Berlin Institute of Health Charité Universitätsmedizin Berlin Charitéplatz 1 Berlin10117 Germany

Deep learning requires large labeled datasets that are difficult to gather in medical imaging due to data privacy issues and time-consuming manual labeling. Generative Adversarial Networks (GANs) can alleviate these challenges enabling synthesis of shareable data. While 2D GANs have been used to generate 2D images with their corresponding labels, they cannot capture the volumetric information of 3D medical imaging. 3D GANs are more suitable for this and have been used to generate 3D volumes but not their corresponding labels. One reason might be that synthesizing 3D volumes is challenging owing to computational limitations. In this work, we present 3D GANs for the generation of 3D medical image volumes with corresponding labels applying mixed precision to alleviate computational constraints. We generated 3D Time-of-Flight Magnetic Resonance Angiography (TOF-MRA) patches with their corresponding brain blood vessel segmentation labels. We used four variants of 3D Wasserstein GAN (WGAN) with: 1) gradient penalty (GP), 2) GP with spectral normalization (SN), 3) SN with mixed precision (SN-MP), and 4) SN-MP with double filters per layer (c-SN-MP). The generated patches were quantitatively evaluated using the Fréchet Inception Distance (FID) and Precision and Recall of Distributions (PRD). Further, 3D U-Nets were trained with patch-label pairs from different WGAN models and their performance was compared to the performance of a benchmark U-Net trained on real data. The segmentation performance of all U-Net models was assessed using Dice Similarity Coefficient (DSC) and balanced Average Hausdorff Distance (bAVD) for a) all vessels, and b) intracranial vessels only. Our results show that patches generated with WGAN models using mixed precision (SN-MP and c-SN-MP) yielded the lowest FID scores and the best PRD curves. Among the 3D U-Nets trained with synthetic patch-label pairs, c-SN-MP pairs achieved the highest DSC (0.841) and lowest bAVD (0.508) compared to the benchmark

关键词： Generative adversarial networks

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Artificial optoelectronic synapses based on Ga2O3metal–semiconductor–metal solar-blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing

Responsive Materials

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Responsive Materials 2025年第2期

作者： Huazhen Sun Bingjie Ye Mei Ge Biao Gong Leyang Qian Irina N. Parkhomenko Fadei F. Komarov Yu Liu Guofeng Yang School of Science Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology Jiangnan University Wuxi Jiangsu China School of Microelectronics School of Integrated Circuits Nantong University Nantong China Faculty of Radiophysics and Computer Sciences Belarusian State University Minsk Belarus A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University Minsk Belarus Center for Quantum Devices Niels Bohr Institute University of Copenhagen Copenhagen Denmark

Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga 2 O 3 -based metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The Ga 2 O 3 PD exhibits a responsivity of 732 A/W under a forward bias of 6 V. The tunable conductance properties of PDs provide a novel approach to synaptic performance. The proposed PDs as artificial synapse realized several essential synaptic function, including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation, the transition from short-term memory to long-term memory, and learning experience behaviors successfully. At a reverse bias, an ultra-low energy consumption of 140 fJ was achieved. In addition, the optoelectronic synapses demonstrated a recognition accuracy of over 95% in the MNIST handwritten number recognition task. These results suggest that Ga 2 O 3 MSM solar-blind UV PDs have high potential for efficient optoelectronic neuromorphic computing applications.

关键词： asymmetric electrodes Ga2O3 neuromorphic computing optoelectronic synapse solar-blind UV PDs

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Spatially coherent interlayer exciton lasing in an atomically-thin heterostructure

Spatially coherent interlayer exciton lasing in an atomicall...

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CLEO: Science and Innovations, CLEO_SI 2019

作者： Paik, Eunice Y. Zhang, Long William Burg, G. Gogna, Rahul Tutuc, Emanuel Deng, Hui Department of Physics University of Michigan Ann ArborMI48109 United States Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas AustinTX78758 United States Applied Physics Program University of Michigan Ann ArborMI48109 United States

We demonstrate lasing in WSe2-MoSe2 heterostructure integrated in a silicon nitride grating cavity. Signatures of lasing include sharp increase in spatial coherence and super-linear increase in the emission intensity ... 详细信息

ISBN: (纸本)9781943580576

关键词： Silicon nitride

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Automated Sensor Firmware Development - Generation, Optimization, and Analysis

Automated Sensor Firmware Development - Generation, Optimiza...

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MBMV 2019;22nd Workshop - Methods and Description Languages for Modelling and Verification of Circuits and Systems

作者： Jens Rudolf Manuel Strobel Joscha Benz Christian Haubelt Martin Radetzki Oliver Bringmann Institute of Applied Microelectronics and Computer Engineering University of Rostock Chair of Embedded Systems University of Stuttgart Embedded Systems Department University of Tubingen

ISBN: (纸本)9783800749454

Embedded systems design has lately become particularly challenging due to fast increasing system complexities, realtime demands and reliability requirements. At the same time, designs are constrained by stringent power budgets, limited memory capacity and short time-to-markets. Recently, various methods to automatically generate, analyze, and optimize different stages of the design flow have been investigated. The evaluation of these methods, however, often focuses on a single associated field of research and thus may not consider the domain-crossing effects that stem from the interaction of different design methods. This paper presents a complete and fully automated workflow that covers model-based generation, analysis, and optimization aspects for embedded firmware and demonstrates it on a virtual system prototype of a typical inertial sensor node. We illustrate the integration of different design and evaluation methods on a realistic example and show potential opportunities for the application of gathered information in order to improve the design.

关键词： Design flow power budget Firmware evaluation method memory capacity Embedded systems Automation Analysis Sensors Virtual Systems

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Orthogonal Boubaker-Turki polynomials algorithm for problems arising in engineering

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AIP Conference Proceedings 2022年第1期2386卷

作者： Osama Alabdali Suha Shihab Mohammed Rasheed Taha Rashid 1College of Education for Pure Sciences University Of Anbar Al-Anbar Iraq 2Applied Science Department University of Technology Baghdad Iraq 3Computer and Microelectronics System Faculity of Engineering University Technology Malaysia (UTM) Skudai 81310 Johor Bahru Malaysia

The approximate solutions of optimal control problems are investigated in this article with Duffing oscillator model. Duffing oscillator models have lots of interesting engineering application. The orthogonal Boubaker-Turki polynomials first are presented with some new interesting properties. Then, an algorithm based on iterative technique is considered with orthogonal Boubaker-Turki polynomials as a basis functions. By utilizing OBTPs, the proposed technique produces a simple procedure to get an optimal approximate solution that can use to problems that are more complex. Convergence of the algorithm is discussed and numerical examples are solved. The results obtained illustrate and emphasize the efficiency of the suggested algorithm when comparing the results with results obtained in previous works.

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Power Silicon Carbide Schottky Diodes as Current Mode $\gamma$ - Radiation Detectors

Power Silicon Carbide Schottky Diodes as Current Mode $\gamm...

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International Conference on microelectronics, MIEL

作者： S. D. Ilić M. S. Andjelković M. A. Carvajal A. M. Lallena M. Krstić S. Stanković G. S. Ristić Center of Microelectronic Technologies Institute of Chemistry Technology and Metallurgy University of Belgrade Serbia Applied Physics Laboratory at Faculty of Electronic Engineering University of Niš Niš Serbia System Architectures Department IHP - Leibniz-Institut für innovative Mikroelektronik Frankfurt (Oder) Germany Department of Electronics and Computer Technology University of Granada Granada Spain Department of Radiation and Environmental Protection at the Vincča Institute of Nuclear Sciences Belgrade Serbia Department of Radiation and Environmental Protection at the Vinc?a Institute of Nuclear Sciences Belgrade Serbia Department of Microelectronics Faculty of Electronic Engineering University of Niš Niš Serbia

In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.

关键词： Schottky diodes Semiconductor device measurement Radiation effects Voltage measurement Sensitivity Power measurement Silicon carbide

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Secondary electron emission from multi-layered TiN/Al2O3 transmission dynodes

arXiv

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arXiv 2020年

作者： Chan, Hong Wah Prodanović, V. Theulings, A.M.M.G. Hagen, C.W. Sarro, P.M. v.d Graaf, H. Science Park 105 Amsterdam1098 XG Netherlands Faculty of Electrical Engineering Mathematics and Computer science Department of Microelectronics ECTM Feldmannweg 17 Delft2628 CT Netherlands Faculty of applied sciences Department of Imaging Physics Delft University of Technology Lorentzweg 1 Delft2628 CJ Netherlands

The (secondary) electron emission from multilayered Al2O3/TiN membranes has been investigated with a hemispherical collector system in a scanning electron microscope for electrons with energies between 0.3 and 10 keV. These ultra-thin membranes are designed to function as transmission dynodes in novel vacuum electron multipliers. Two different types, a bi-layer and a tri-layer, have been manufactured by means of atomic-layer deposition (ALD) of aluminum oxide and sputtering of titanium nitride. The reflection and transmission electron yield (ϭR, ϭT ) have been measured for both types of membranes. In comparison, the tri-layer membranes outperformed the bi-layer membranes in terms of transmission electron yield for films with the same effective thickness. The highest transmission electron yield was measured on an Al2O3/TiN/Al2O3 film with layer thicknesses of 5/2.5/5 nm, which had a maximum transmission electron yield ϭTmax (E0) of 3.1(1.55 keV). Furthermore, the bi-layer membranes have been investigated more in-depth by performing an additional measurement using a positive sample bias to separate the transmitted fraction ηT and the transmission secondary electron yield ℘T. The transmitted fraction was used to determine the transmission parameter P, which characterizes the interaction of primary electrons (PEs) in thin films. The transmission secondary electron yield was used to compare the energy transfer of PEs in films with different thicknesses. Copyright © 2020, The Authors. All rights reserved.

关键词： Alumina

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Ultra-thin corrugated metamaterial film as large-area transmission dynode

arXiv

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arXiv 2020年

作者： Chan, H.W. Prodanović, V. Theulings, A.M.M.G. Bruggencate, T. ten Hagen, C.W. Sarro, P.M. van der Graaf, H. Science Park 105 Amsterdam1098 XG Netherlands Faculty of Electrical Engineering Mathematics and Computer science Department of microelectronics ECTM Feldmannweg 17 Delft2628 CT Netherlands Faculty of applied sciences Department of Imaging Physics Delft University of Technology Lorentzweg 1. Delft2628 CJ Netherlands

Large-area transmission dynodes were fabricated by depositing an ultra-thin continuous film on a silicon wafer with a 3-dimensional pattern. After removing the silicon, a corrugated membrane with enhanced mechanical properties was formed. Mechanical metamaterials, such as this corrugated membrane, are engineered to improve its strength and robustness, which allows it to span a larger surface in comparison to flat membranes while the film thickness remains constant. The ultra-thin film consists of three layers (Al2O3/TiN/Al2O3) and is deposited by atomic layer deposition (ALD). The encapsulated TiN layer provides in-plane conductivity, which is needed to sustain secondary electron emission. Two types of corrugated membranes were fabricated: a hexagonal honeycomb and an octagonal pattern. The latter was designed to match the square pitch of a CMOS pixel chip. The transmission secondary electron yield was determined with a collector-based method using a scanning electron microscope. The highest transmission electron yield was measured on a membrane with an octagonal pattern. A yield of 2.15 was achieved for 3.15 keV incident electrons for an Al2O3/TiN/Al2O3 tri-layer film with layer thicknesses of 10/5/15 nm. The variation in yield across the surface of the corrugated membrane was determined by constructing a yield map. The active surface for transmission secondary electron emission is near 100%, i.e. a primary electron generates transmission secondary electrons regardless of the point of impact on the corrugated membrane. Copyright © 2020, The Authors. All rights reserved.

关键词： Silicon wafers

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Measurement of the transmission secondary electron yield of nanometer-thick films in a prototype Timed Photon Counter

arXiv

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arXiv 2020年

作者： van der Reep, Tom H.A. Looman, B. Chan, H.W. Hagen, C.W. van der Graaf, H. Science Park 105 Amsterdam1098 XG Netherlands Faculty of applied sciences Department of Imaging Physics Delft University of Technology Lorentzweg 1 Delft2628 CJ Netherlands Faculty of electrical engineering mathematics and computer science Department of Microelectronics/ECTM Delft University of Technology Feldmanweg 17 Delft2628 CT Netherlands

We measure the transmission secondary electron yield of nanometer-thick Al2O3/TiN/Al2O3 films using a prototype version of a Timed Photon Counter (TiPC). We discuss the method to measure the yield extensively. The yield is then measured as a function of landing energy between 1.2 and 1.8 keV and found to be in the range of 0.1 (1.2 keV) to 0.9 (1.8 keV). These results are in agreement to data obtained by a different, independent method. We therefore conclude that the prototype TiPC is able to characterise the thin films in terms of transmission secondary electron yield. Additionally, observed features which are unrelated to the yield determination are interpreted. Copyright © 2020, The Authors. All rights reserved.

关键词： Aluminum oxide

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Enhanced plasmonic behavior of metal nanoparticles surrounded with dielectric shell

Enhanced plasmonic behavior of metal nanoparticles surrounde...

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ASME 2019 International Mechanical engineering Congress and Exposition, IMECE 2019

作者： Yuksel, Anil Cullinan, Michael Yu, Edward T. Murthy, Jayathi IBM Corporation 11400 Burnet Road AustinTX78758 United States Department of Mechanical Engineering University of Texas at Austin AustinTX78712 United States Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin AustinTX78758 United States Henry Samueli School of Engineering and Applied Science University of California Los Angeles Los AngelesCA90095 United States

ISBN: (纸本)9780791859452

Metal nanoparticles have attracted intense attention due to their unique optical and thermal properties in various next generation applications such as micro-nano electronics and photonics. The near-field confinement between closely packed metal nanoparticles, which is enhanced due to their plasmonic behavior, creates high thermal energy densities under visible to near-infrared wavelength laser irradiation. As metal nanoparticles tend to be oxidized or change shape under laser illumination, resulting in nonlinear optical and thermal behavior, surrounding each metal nanoparticle with a dielectric shell could be a potential way to prevent these effects as well as to engineer their plasmonic behavior. In this study, we investigate energy transport within dimer and 4 nanoparticle (chain) configurations of 50 nm radius Au nanoparticles surrounded by dielectric shells under illumination from various laser sources in different dielectric media. Copyright © 2019 ASME.

关键词： Plasmonics

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