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3rd IEEE Eurasia Conference on IOT, Communication and Engineering, ECICE 2021

作者： Lai, Wen-Cheng Zhang, Chang-Chun Nat'l Yunlin Univ. of Sci. Techn Bachelor Program in Industrial Projects Yunlin Taiwan Nanjing University of Posts and Telecommunications College of Electronic Science and Eng. China

ISBN: (纸本)9781665445160

This article investigates the quadrature voltage-controlled oscillator (QVCO) by using the loop closed-ring inductor and merging the excellent efficiency of class-C oscillator to the complementary PMOS-NMOS topology. Designed from TSMC 0.18 μm 1P6M CMOS processing, the presented folded-cascode mixer exhibits a high conversion gain, a maximum input P1dB of-12 to-16.7 dBm, IIP3 of-4.5 to-7.2 dBm, and LO to RF isolation of about 33.8 dB at VDD=1.5 V, respectively. The proposed QVCO works during 6.69 and 7 GHz at overall power dissipation is 7.59 mW. Experimental of phase noise and evaluated figure of merit (FOM) of the promoted 6.69 GHz QVCO are-113.56 dBc/Hz at 1 MHz frequency offset and-181.2 dBc/Hz, respectively. © 2021 IEEE.

关键词： Variable frequency oscillators

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Dual band current reusing VCO with loop filter and sigma-delta modulators for PLL applications

Dual band current reusing VCO with loop filter and sigma-del...

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2021 IEEE International Conference on Electrical, Computer, Communications and Mechatronics Engineering, ICECCME 2021

作者： Lai, Wen-Cheng Bachelor Program in Industrial Projects National Yunlin Univ. of Sci. and Techn. Taiwan Dept. Electronic Eng. National Yunlin Univ. of Sci. and Tech. Taiwan

ISBN: (纸本)9781665412629

The promoted low power dissipation voltage-controlled oscillator (VCO) with low-pass filter of fifth order curer and low pass sigma-delta (ΣΔ) modulator are fabricated with tsmc 0.18 μm CMOS processing for phase-locked loop (PLL) controlled applications. The proposed dual-band current reusing VCO is used divided-by-2 to adopt low power dissipation, power saving and enhance performance. The proposed switching capacitors of dual-band ΣΔ modulator and filter optimized core chip area is report for PLL controlled applications. © 2021 IEEE.

关键词： Modulators

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RF Front-end with Antenna for Bluetooh Wireless of Medical Biosensing 15

RF Front-end with Antenna for Bluetooh Wireless of Medical B...

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15th IEEE International Conference on Anti-Counterfeiting, Security, and Identification, ASID 2021

作者： Lai, Wen-Cheng Wu, Yi National Yunlin University of Science and Technology Bachelor Program in Industrial Projects Taiwan Dept. Electronic Engineering National Yunlm University of Science and Technology Taiwan Fujian Normal Univ. College of Photonic and Electronic Engineering China

ISBN: (纸本)9781665440080

The proposed article introduces RF wireless integrated transceiver for Bluetooth wireless of medical biosensing applications. The proposed wireless integrated transceiver consists of two-stage power amplifier (PA) with predistorter, band-pass Gm-C filter, distributed single-pole double-throw (SPDT) radio frequency (RF) switching, low noise amplifier (LNA) and chip antenna. The presented PA design presents conversion gain of 13 dB, the output 1-dB compression point (OP1dB) of 2.7 dBm and power added efficiency (PAE) more than 20%, respectively. The presented LNA exhibits return loss of input more than 10.32 dB, return loss of output more than 10.77 dB, the produce gain between 8.16 dB and 13.1 dB, isolation more than 42 dB, the produce noise figure between 4.48 dB and 7.66 dB, the produce input 1-dB compression point (IP1dB) between -13.43 dB and -5.43 dB, respectively. The implemented integrated RF frontend using 0.18um CMOS technology has experimental outdoor/ indoor throughput base on channels, distance and concurrently complies with the Bluetooth wireless requirement. © 2021 IEEE.

关键词： Bandpass filters

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RF Receiver Front-End Chip Design with Antenna for Ultra-wideband Applications

RF Receiver Front-End Chip Design with Antenna for Ultra-wid...

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International Conference on Communication Technology (ICCT)

作者： Wen-Cheng Lai Bachelor Program in Industrial Projects National Yunlin University of Science and Technology National Yulin University of Science and Technology

ISBN: (纸本)9781665432078

The proposed radio frequency receiver front-end applying for ultra-wideband applications is presented in article design from tsmc 0.18um CMOS 1P6M processing for ultrawideband applications. The low power RF receiver front-end design consists of distributed low noise amplifier with wake-up receiver, double balance mixer with broadband balun, Colpitts quadrature voltage-controlled oscillator and bandpass Gm-C loop filter. A novel approach with Gm-Cbandpass loop filter instead of a conventional passive loop filter used in distributed low noise amplifier with wake-up receiver can promote excellence gain and low power consumption. An integrated, low-phase noise Colpitts quadrature voltage-controlled oscillator (QVCO) and double balance mixer and balun are presented. Experimental results of the integrated circuit exhibit optimized performance with ultrawideband antenna.

关键词： Band-pass filters Radio frequency Antenna measurements Low-noise amplifiers Voltage-controlled oscillators Receiving antennas Ultra wideband antennas

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A 35 V-5 V monolithic integrated GaN-based DC-DC floating buck converter

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Semiconductor Science and Technology 2023年第9期38卷 095001-095001页

作者： Zhu, Yuhao Su, Haodong Li, Fan Li, Ang Lei, Xiaohaoyang Cui, Miao Lai, Wen-Cheng Wen, Huiqing Liu, Wen School of Advanced Technology Xi’an Jiaotong-Liverpool University Suzhou China Department of Electrical Engineering and Electronics University of Liverpool Liverpool United Kingdom Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Yunlin Taiwan Department of Electronic Engineering National Yunlin University of Science and Technology Yunlin Taiwan

The paper presents the development of a GaN DC-DC power converter with a pre-driver module and power device based on a monolithic integrated GaN E/D-mode metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) platform. The pre-driver module with direct coupled field effect transistor logic circuit structure has been monolithically integrated with a GaN power transistor on a Si-based AlGaN/GaN commercial epitaxial wafer. The MIS-HEMTs structure adopts an insulated gate dielectric layer to suppress the leakage current and increase gate voltage robustness. The GaN-based floating buck converter employs a 1 mH inductor and a 9 μF capacitor to achieve 35 V-5 V power conversion. As a result, the pre-driver module is capable of delivering a 10 V driving voltage. GaN monolithic integration of the pre-driver module and power device can reduce the system area in the DC-DC application, which allows for an integrated chip size of 1.8 mm2 © 2023 IOP Publishing Ltd

关键词： III-V semiconductors

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Performance Investigation of Tri-Layer Double-Gate Ingazno Thin-Film Transistor in Synchronous Bias for Active-Matrix Lcds

SSRN

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SSRN 2023年

作者： Mishra, Richa Dargar, Shashi Kant Dargar, Abha Birla, Shilpi Lai, Wen-Cheng Department of Electronics Engineering Kalasalingam Academy of Research and Education TN India Department of Electronics Engineering Manipal University Jaipur India Department of Computer Science Engineering Parul University Vadodara India Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Taiwan Department of Electronic Engineering National Yunlin University of Science and Technology Taiwan

In the current display electronics, a high-resolution pixel density and refresh rate ranging 7680 × 4320 pixels, 300 ppi, and 240 Hz are in high demand. The pixel-driving Thin–Film Transistors (TFTs) are primarily responsible for the switch in such displays. The amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs are popular in realizing better high–speed properties in line to achieve those needs. In previous years, amorphous-IGZO channel TFTs in one-gate and dual-gate structures have exhibited improved gate control. In this paper, the authors present the analytical performance of double–gate tri-layer channel structure design of a-IGZO TFT with three stacked channel layers (IGZO/ITO/ITO1) to model and evaluate the device performance at different gate biasing. The proposed device simulation results were encouraging, in terms of high capacitance in dual gate bias (CDG) 26.2 nF/cm2, high mobility (µFE) 16.93 cm2/V.s, and steeper subthreshold swing (SS) 95 mV/decade. © 2023, The Authors. All rights reserved.

关键词： Thin film transistors

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Two-Stage Class-A Power Amplifier with RF Frontend for Transmitter Wireless Applications

Two-Stage Class-A Power Amplifier with RF Frontend for Trans...

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IEEE MTT-S International Microwave and RF Conference

作者： Wen-Cheng Lai Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Taiwan R.O.C. National Yunlin University of Science and Technology Taiwan R.O.C.

ISBN: (纸本)9781665458764

This article introduces RF wireless integrated transmitter for 5.8GHz communication and RFID applications. The proposed wireless integrated transmitter consists of two-stage class A CMOS power amplifier (PA) with bandgap voltage reference (BGR) bias, pre-distorter, folded-cascode mixer with balun, differential cross-coupled Colpitts quadrature voltage-controlled oscillator (QVCO), band-pass Gm-C filter and antenna design. The presented PA design presents input/ output return loss of 14dB/23dB, conversion gain of 15.5dB, the output 1-dB compression point (OP 1dB) of 16.5dBm, two tone test / output 3 rd order intercept point (OIP3) of 25.8dBm and power added efficiency (PAE) higher than 23%, respectively. The implemented integrated transmitter using 0.18um CMOS technology with antenna has experimental at anechoic chamber.

关键词： Band-pass filters Wireless communication Radio frequency Voltage-controlled oscillators Transmitting antennas Power amplifiers Voltage

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Dynamic Tail Biased Class-C Voltage-Controlled-Oscillator with Double-Balanced Mixer Design

Dynamic Tail Biased Class-C Voltage-Controlled-Oscillator wi...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Wen-Cheng Lai Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Taiwan R.O.C. National Yunlin University of Science and Technology Taiwan R.O.C.

ISBN: (纸本)9781665439176

This article proposes excellent class-C voltage-controlled oscillator (VCO) with dual-balanced mixer. The oscillator consists of a double resonance LC resonator in shunt with one pair of capacitive cross-coupled nMOSFETs. The common source of cross-coupled nMOSFETs is congregated to the ground from a tail transistor in shunt with a capacitor, dynamic bias is applied to the gate of the tail. The proposed oscillator has been implemented with the tsmc $0.18\mu\mathrm{m}$ CMOS technology and the core current of 2.535 mA and DC dissipation of 2.99 mW respectively at the dc drain-source bias of 1.18V. The oscillator can generate differential high-band and low-band signals at 4.286GHz and 2.94GHz respectively. The die area of the class-C oscillator is $1.87\times 1.109\ \text{mm}^{2}$ . The layout dimension of the mixer is $0.6\times 0.7\ \text{mm}^{2}$ .

关键词： MOSFET Voltage measurement Voltage-controlled oscillators Current measurement Layout Logic gates Threshold voltage

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RF Front-end Integrated Circuits with 2.4 GHz Antenna for Wireless Communication Receiver

RF Front-end Integrated Circuits with 2.4 GHz Antenna for Wi...

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IEEE International Conference on Electronics, Circuits and Systems (ICECS)

作者： Wen-Cheng Lai Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Taiwan R.O.C. National Yunlin University of Science and Technology Taiwan R.O.C.

The proposed integrated CMOS front-end chip design, intended for use in 2.4 GHz radio frequency front-end receiver, has been implemented in tsmc 0.18um CMOS processing. The 2.4 GHz receiver front-end design consists of image reject low noise amplifier (LNA), the 3 rd order passive bandpass Gm-C loop filter, gilbert cell double balance mixer with passive balun and switched capacitor tuning voltage-controlled oscillator (VCO). The proposed 2.4 GHz antenna applying for 2.4 GHz RF front-end receiver application is presented and enhance performance in this article design. Experimental results of the RF integrated 2.4 GHz RF frontend receiver exhibit radiation pattern with the proposed 2.4 GHz to 2.5 GHz antenna at anechoic chamber room.

关键词： Radio frequency Band-pass filters Wireless communication Low-noise amplifiers Voltage-controlled oscillators Receiving antennas Switches

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Continuous-Time Sigma-Delta Modulator with Filter and Voltage-Controlled Oscillator Chip Design in Phase Locked Loop for Sensor Control

Continuous-Time Sigma-Delta Modulator with Filter and Voltag...

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IEEE International Symposium on Smart Electronic Systems (iSES)

作者： Wen-Cheng Lai Bachelor Program in Industrial Projects National Yunlin University of Science and Technology Taiwan R.O.C. National Yunlin University of Science and Technology Taiwan R.O.C.

ISBN: (纸本)9781665416184

A multi-band low-pass sigma-delta ($\Sigma \Delta$) modulator with cascaded integrators and voltage-controlled oscillator with divider are presented for phase locked loop controller. The proposed prototype of phase locked loop was implemented in tsmc 0.18 $\mu$m CMOS process. Another feature is that only one set loop filter is designed to promote multi-band by auto-switching capacitors with quantum algorithm from phase frequency detector to achieve a multi-band solution. Experimental have achieved the SNDR of 42/33 dB over 1/2 MHz, respectively for low power multi-band phase locked loop sensor control applications.

关键词： Wireless communication Sigma-delta modulation Frequency modulation Quantum algorithm Phase modulation Voltage-controlled oscillators Receivers

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