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作者： Stroscio, Michael A. Dutta, Mitra IEEE United States University of Illinois Chicago IL 60607 United States Department of Bioengineering United States Department of Electrical and Computer Engineering United States Department of Physics University of Illinois Chicago United States American Association for the Advancement of Science United States American Physical Society Yale Science and Engineering Association United States Army Research Laboratory United States Optical Society of America United States Society of Women Engineers Army Research Laboratory United States

The advent of semiconductor devices with nanoscale dimensions creates the potential to integrate nanoelectronics and optoelectronic devices with a great variety of biological systems. Moreover, the advances in nanotechnology are opening the way to achieving direct electrical contact of nanoelectronic structures with electrically and electrochemically active subcellular structures - including ion channels, receptors, and transmembrane proteins such as bacteriorhodopsin. Direct electrical interfacing at the biomolecular level opens the possibility of monitoring and controlling critical biological functions and processes in unprecedented ways, and portends a vast array of possibilities such as new classes of prosthetic devices, medical monitoring devices, medical delivery systems, and patient monitoring systems, as well as other applications. This article describes the salient properties of relevant biological structures and nanostructures. Advances in integrating man-made nanostructures with biological structures, including biomolecules, are described as well as the properties, characteristics, and functions of integrated nanoelectronic- biological structures. Future directions based on these prototype systems are highlighted. © 2005 IEEE.

关键词： Semiconductor devices

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Vertically aligned carbon nanotubes field emission devices fabricated by furnace thermal CVD at atmospheric pressure

Vertically aligned carbon nanotubes field emission devices f...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： S. Wei W.P. Kang J.L. Davidson W.H. Hofmeister B.K. Choi J.H. Huang Program in Materials Science Vanderbilt University Nashville TN USA Department of Electrical Engineering and Computer Science Vanderbilt University Nashville TN USA Department of Materials Science and Engineering National Tsing Hua University Hsinchu Taiwan

In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.

关键词： Carbon nanotubes Furnaces Temperature Raman scattering Chemical vapor deposition Cathodes Diodes Morphology Scanning electron microscopy Spectroscopy

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A comparative evaluation of competitive learning algorithms for edge detection enhancement

A comparative evaluation of competitive learning algorithms ...

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European Signal Processing Conference (EUSIPCO)

作者： Tuba Sirin Mehmet Izzet Saglam Isin Erer Muhittin Gokmen Okan Ersoy Informatics Institute Computer Science and Engineering Informatics Institute Satellite Communication and Remote Sensing Program Faculty of Electrical and Electronic Engineering Electronics and Communication Department Faculty of Electrical and Electronic Engineering Istanbul Technical University Maslak Istanbul TURKEY Purdue University School of Electrical and Computer Engineering West Lafayette Indiana USA

Most edge detection algorithms include three main stages: smoothing, differentiation, and labeling. In this paper, we evaluate the performance of algorithms in which competitive learning is applied first to enhance edges, followed by an edge detector to locate the edges. In this way, more detailed and relatively more unbroken edges can be found as compared to the results when an edge detector is applied alone. The algorithms compared are K-Means, SOM and SOGR for clustering, and Canny and GED for edge detection. Perceptionally, best results were obtained with the GED-SOGR algorithm. The SOGR is also considerably simpler and faster than the SOM algorithm.

关键词： Image edge detection Image segmentation Vectors Abstracts Filtering algorithms Erbium Training

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Modeling of spatially periodic dielectric sensors in the presence of a top ground plane bounding the test dielectric

Modeling of spatially periodic dielectric sensors in the pre...

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作者： Sheiretov, Y. Zahn, M. JENTEK Sensors Inc. 110-1 Clematis Ave. Waltham MA 02451-7013 United States Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Eta Kappa Nu Honor Society Department of Electrical Engineering MIT MIT Course VI-A Electrical Engineering Computer Science Internship Program Liquid Dielectrics Committee International Advisory Committee International Conference on Dielectric Liquids

Semi-analytical models are used to simulate the response of periodic-field electro quasistatic dielectrometry sensors. Due to the periodic structure of the sensors it is possible to use Fourier series methods in combination with collocation point numerical techniques to generate accurate sensor simulations much more efficiently than with the more general finite-element methods. Previously, collocation-point models used to compute the response of periodic field dielectric sensors, also known as Interdigitated Electrode Dielectrometers (IDED), have ignored the contribution of the constant (zero-order) term in the Fourier series expansion of the physical quantities. This is justifiable if the top dielectric material layer under test is infinitely thick, with any top ground plane bounding the dielectric removed too far from the sensor to influence its response. This is the assumption generally made until now in the application of these models. In practice, however, it is impossible to eliminate the cumulative effect of objects at ground potential in the vicinity of the sensor, which in general manifests itself as a ground plane electrode positioned at some effective distance within the top dielectric layer (usually air). In order to eliminate this source of uncertainty in the measurements, we suggest that a grounded electrode be explicitly placed at the top of the dielectric layer in the experimental setup, and its presence be accounted for in the models. Furthermore, in many cases, such as measurements on ceramic thermal barrier coatings, a metal layer is already present behind the material under test. In this paper we present how the models must be modified to account for this ground plane, and what effect it has on the dependence of the sensor response on the material properties. For example, the sensor transcapacitance may no longer be a monotonically increasing function of the material's permittivity, leading to nonuniqueness in permittivity measurements, as some f

关键词： Dielectric devices

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A Formal Approach for Component Based Embedded Software Modelling and Analysis

A Formal Approach for Component Based Embedded Software Mode...

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IEEE International Symposium on Industrial Electronics (ISIE)

作者： H.O. Almeida L. Dias da Silva E. Oliveira A. Perkusich Department of Electrical Engineering Federal University of Campina Grande Campina Grande Paraiba Brazil Graduate Program in Computer Science Federal University of Campina Grande Campina Grande Paraiba Brazil

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Effects of deposition and synthesis parameters on size, density, structure, and field emission properties of Pd-catalyzed carbon nanotubes synthesized by thermal chemical vapor deposition

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2005年第2期23卷 793-799页

作者： S. Wei W. P. Kang W. H. Hofmeister J. L. Davidson Y. M. Wong J. H. Huang Interdisciplinary Program in Materials Science Vanderbilt University Nashville Tennessee 37235 USA Department of Electrical and Computer Engineering Vanderbilt University Box 1661-B Vu Station B Nashville Tennessee 37235 USA Department of Chemical Engineering Vanderbilt University Nashville Tennessee 37235 USA Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300 Taiwan Republic of China

The effects of deposition parameters and NH3 pretreatment on the size and distribution of Pd catalytic particles and subsequently their effects on the characteristics of the synthesized carbon nanotubes (CNTs) were systematically investigated. It was found that the size of Pd particles decreases and the particle density (total number of Pd particles per unit area) increases as the Pd film thickness decreases. Moreover, pretreatment of Pd film in NH3 gas promotes smaller Pd particles and higher particle density which is beneficial for CNT growth. The CNTs were synthesized by thermal chemical vapor deposition at 750 °C using methane (CH4) as the carbon source, and a mixture of Ar/H2 (80 vol %: 20 vol %) as a carrier gas with NH3 serving as a processing reagent. The incorporation of NH3 in CNT synthesis, per the specific pretreatment of catalytic film, has a distinct effect on the size and morphology of CNTs produced. The interrelation between processing, structure and emission behavior of CNTs produced with different synthesis conditions was examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and field emission measurements.

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Comment on “Inability of Lyapunov Exponents to Predict Epileptic Seizures”

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Physical Review Letters 2005年第1期94卷 019801-019801页

作者： Leonidas D. Iasemidis Konstantinos Tsakalis J. Chris Sackellares Panos M. Pardalos The Harrington Department of Bioengineering Arizona State University Tempe Arizona 85287 USA Department of Electrical Engineering Arizona State University Tempe Arizona 85287 USA Departments of Neurology Neuroscience Pediatrics Psychiatry and Biomedical Engineering University of Florida Gainesville Florida 32611 USA Departments of Industrial and Systems Engineering Computer Science and Biomedical Engineering University of Florida Gainesville Florida 32611 USA

A Comment on the Letter by Ying-Cheng Lai et al., Phys. Rev. Lett. 91, 068102 (2003). The authors of the Letter offer a Reply.

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Journal of Information science and engineering: Editorial notice

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Journal of Information science and engineering 2005年第5期21卷 i-ii页

作者： Lee, Der-Tsai Amato, Nancy M. Chang, Shih-Fu Chen, Homer H. Chen, Tsuhan Hsu, Tsan-Sheng Hwang, Jenq-Neng Kuo, Sy-Yen Kuo, Tei-Wei Li, Chung-Sheng Tokuyama, Takeshi Wing, Jeannette Wu, Tzong-Chen Yen, John Computer Science at Texas A and M University United States Parasol Laboratory United States IEEE Transactions on Parallel and Distributed Systems Computing Research Association's Committee on the Status of Women in Computing Research CRA-W's Distributed Mentor Program United States Department of Electrical Engineering Columbia University United States Lab. United States College of Electrical Engineering and Computer Science National Taiwan University Taiwan IEEE Transactions on Circuits and Systems for Video Technology IEEE Department of Electrical and Computer Engineering Carnegie Mellon University Pittsburgh PA United States ACM ACM SIGACT IEEE Computer Society IICM Austria Research and Development of the Department Multimedia Signal Processing Technical Committee IEEE Signal Processing Society United States IEEE Transactions on Circuits and systems for Video Technology College of Electrical Engineering and Computer Science National Taiwan Ocean University Keelung Taiwan Department of Electrical Engineering National Taiwan University Taiwan Department of Computer Science and Information Engineering National Taiwan University Taipei Taiwan IEEE Technical Committee on Real-Time Systems Computer Science Division IBM T.J. Watson Research Center United States IBM Research Division Graduate School of Information Sciences Tohoku University Japan ACM IPSJ Mathematical Society of Japan Japan Department of Computer Science Computer Science Department Carnegie Mellon University United States National Academies of Science's Computer Science and Telecommunications Board United States Microsoft's Trustworthy Academic Advisory Board Intel Research Pittsburgh's Advisory Board United States Dartmouth's Institute for Security Technology Studies Advisory Committee Canada Sloan Research Fellowships Program Committee United States ACM Taiwan China Information Sciences and Technology Pennsylvania State University United States Laboratory for Intelligent Agents Penn State's School of Info

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Molecular dynamics simulations of the mechanical strength of Si∕Si3N4 interfaces

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Physical Review B 2005年第9期72卷 094115-094115页

作者： Martina E. Bachlechner Jennifer Zhang Ye Wang Jarrod Schiffbauer Steven R. Knudsen Dimitris Korakakis Physics Department West Virginia University Morgantown West Virginia 26506 USA NASA Independent Verification and Validation Facility Science and Engineering Apprenticeship Program—Morgantown High School Morgantown West Virginia 26501 USA Institute for Scientific Research Inc. Fairmont West Virginia 26555 USA Lane Department for Computer Science and Electrical Engineering West Virginia University Morgantown West Virginia 26506 USA

Molecular dynamics simulations are performed on parallel computers to investigate the crystalline Si(111)∕Si3N4(0001) interface that is modeled as an eight-component system. The average total energy per particle and the average kinetic energy per particle of the subsystems are monitored during the preparation of the system. The Young’s modulus of the interface is compared with that of the silicon part alone and that of the silicon-nitride film, respectively. The results for one extended simulation feature a crack in the silicon-nitride film and dislocated atoms in silicon below the crack. Simulations at rates of strain ranging from 0.00125to0.05ps−1 show that for lower strain rates, the systems stretched faster reach their ultimate strength at a higher strain value than those that were stretched more slowly. At the highest strain rates, however, the failure mechanisms change qualitatively indicative of a more ductile behavior.

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Complete pose determination for low altitude unmanned aerial vehicle using stereo vision

Complete pose determination for low altitude unmanned aerial...

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2005 IEEE/RSJ International Conference on Intelligent Robots and Systems

作者： L.K. Wang S.-C. Hsieh E.C.-W. Hsueh Fei-Bin Hsaio Kou-Yuan Huang Department of Electrical Engineering National Kaohsiung University of Applied Sciences Kaohsiung Taiwan National Space Program Office Hsinchu Taiwan Institute of Aeronautics and Astronautics National Cheng Kung University Tainan County Taiwan Department of Computer and Information Science National Chiao Tung University Hsinchu Taiwan

A well-developed pose estimation scenario suitable for low altitude unmanned aerial vehicle (UAV) is proposed. By employing dual CCD cameras onboard, the instant pose of UAV can be determined without any use of expensive sensor like gyro. The unscented Kalman filter (UKF) is hereafter introduced to resolve the highly nonlinear system dynamics as well as the measurement process of the pose estimation system. The only measurements recorded are those snapshots of ground targets/landmarks taken by two CCD cameras. The proposed scenario can also detect large angle rotation of UAV. Simulation is conducted via a simple case, both UAV and ground targets are stationary, to show the feasibility and applicability of the proposed scheme. Actual GPS measurement data of ground targets coordinates was recorded for UKF processing. A highlight phenomenon, implied by simulation, reveals that a sudden transition of estimation errors arises at the epoch when the UAV is experiencing a large angle maneuvering up to 180/spl deg/ per second.

关键词： Unmanned aerial vehicles Stereo vision Charge coupled devices Charge-coupled image sensors Nonlinear systems Nonlinear dynamical systems Vehicle dynamics Global Positioning System Coordinate measuring machines Estimation error

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