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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Kazuhiko Endo Seiji Samukawa Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Institute of Communications Engineering Department of Electronics and Electrical Engineering Institute of Biomedical Engineering Center for mm Wave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Fluid Science Tohoku University 2-1-1 Katahira Aoba-ku Sendai Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan

In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed $(iid)$ assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

关键词： MOSFET Fluctuations Statistical analysis Gallium arsenide Cutoff frequency Metals Logic gates

An Ensemble Approach for Brain Tumor Segmentation and Synthesis

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arXiv 2024年

作者： Rivera, Juampablo Heras E. Chopra, Agamdeep S. Ren, Tianyi Oswal, Hitender Pan, Yutong Sordo, Zineb Walters, Sophie Henry, William Mohammadi, Hooman Olson, Riley Rezayaraghi, Fargol Lam, Tyson Jaikanth, Akshay Kancharla, Pavan Ruzevick, Jacob Ushizima, Daniela Kurt, Mehmet Department of Mechanical Engineering University of Washington SeattleWA United States Paul G. Allen School of Computer Science University of Washington SeattleWA United States Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Bioengineering University of Washington SeattleWA United States Department of Electrical and Computer Engineering University of Washington SeattleWA United States Watauga High School BooneNC United States Department of Neurological Surgery University of Washington SeattleWA United States

The integration of machine learning in magnetic resonance imaging (MRI), specifically in neuroimaging, is proving to be incredibly effective, leading to better diagnostic accuracy, accelerated image analysis, and data-driven insights, which can potentially transform patient care. Deep learning models utilize multiple layers of processing to capture intricate details of complex data, which can then be used on a variety of tasks, including brain tumor classification, segmentation, image synthesis, and registration. Previous research demonstrates high accuracy in tumor segmentation using various model architectures, including nn-UNet and Swin-UNet. U-Mamba, which uses state space modeling, also achieves high accuracy in medical image segmentation. To leverage these models, we propose a deep learning framework that ensembles these state-of-the-art architectures to achieve accurate segmentation and produce finely synthesized images. © 2024, CC BY.

关键词： Image segmentation

Sensing With Communication Signals: From Information Theory to Signal Processing

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arXiv 2025年

作者： Liu, Fan Liu, Ya-Feng Cui, Yuanhao Masouros, Christos Xu, Jie Han, Tony Xiao Buzzi, Stefano Eldar, Yonina C. Jin, Shi National Mobile Communications Research Laboratory School of Information Science and Engineering Southeast University Nanjing210096 China State Key Laboratory of Scientific and Engineering Computing Institute of Computational Mathematicsand Scientific/Engineering Computing Academy of Mathematics and Systems Science Chinese Academy of Sciences Beijing100190 China Department of Communication Engineering Beijing University of Posts and Telecommunications Beijing100876 China Department of Electronic and Electrical Engineering University College London LondonWC1E 7JE United Kingdom Guangdong518172 China Huawei Technologies Co. Ltd China Department of Electrical and Information Engineering University of Cassino and Southern Lazio CassinoI-03043 Italy Department of Electronics Information and Bioengineering Politecnico di Milano MilanoI-20133 Italy ParmaI-43124 Italy Faculty of Mathematics and Computer Science Weizmann Institute of Science Rehovot Israel

The Integrated Sensing and Communications (ISAC) paradigm is anticipated to be a cornerstone of the upcoming 6G networks. In order to optimize the use of wireless resources, 6G ISAC systems need to harness the communication data payload signals, which are inherently random, for both sensing and communication (S&C) purposes. This tutorial paper provides a comprehensive technical overview of the fundamental theory and signal processing methodologies for ISAC transmission with random communication signals. We begin by introducing the deterministic-random tradeoff (DRT) between S&C from an information-theoretic perspective, emphasizing the need for specialized signal processing techniques tailored to random ISAC signals. Building on this foundation, we review the core signal models and processing pipelines for communication-centric ISAC systems, and analyze the average squared auto-correlation function (ACF) of random ISAC signals, which serves as a fundamental performance metric for multi-target ranging tasks. Drawing insights from these theoretical results, we outline the design principles for the three key components of communication-centric ISAC systems: modulation schemes, constellation design, and pulse shaping filters. The goal is to either enhance sensing performance without compromising communication efficiency or to establish a scalable tradeoff between the two. We then extend our analysis from a single-antenna ISAC system to its multi-antenna counterpart, discussing recent advancements in multiinput multi-output (MIMO) precoding techniques specifically designed for random ISAC signals. We conclude by highlighting several open challenges and future research directions in the field of sensing with communication signals. Copyright © 2025, The Authors. All rights reserved.

关键词： Signal modulation

Generative adversarial networks applied to gene expression analysis: An interdisciplinary perspective

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Computational and Systems Oncology

Computational and Systems Oncology 2023年第3期3卷

作者： Ai, Xusheng Smith, Melissa C Feltus, Frank Alex Electrical and Computer Engineering Department Clemson University Clemson SC United States Department of Genetics and Biochemistry Biomedical Data Science & Informatics Program Clemson Center for Human Genetics Clemson University Clemson SC United States

The remarkable flexibility and adaptability of generative adversarial networks (GANs) have led to the proliferation of its models in bioinformatics research. Proteomic and transcriptomic profiles have been shown to be promising methods for discovering and identifying disease biomarkers. However, those analyses were performed by trained human examiners making the process tedious, time consuming, and hard to standardize. With the development of GANs, it is now possible to reduce computational costs and human time for bioinformatics analysis to produce effective biomarkers. Moreover, GANs help address the lack of phenotypic state transitional gene expression data as well as avoid protected human data constraints by generating RNA sequencing (RNA-seq) data from random vectors. The purpose of this review is to summarize the use of GAN approaches and techniques to augment RNA-seq expression data and identify clinically useful biomarkers. We compare different studies that use different types of GAN models to examine the biomarkers. Also, we identify research gaps and challenges that apply GANs to bio-informatics. Finally, we propose potential directions for future research. © 2023 The Authors. Computational and Systems Oncology published by Wiley Periodicals LLC.

关键词： biomarkers data augmentation generative adversarial network RNA sequencing

Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

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Materials Today Advances 2024年 22卷

作者： Lo, Yu-Yun Chen, Yi-Ho Hsu, Yun-Cheng Lee, Tzu-Yi Hung, Yu-Ying Kao, Yu-Cheng Zan, Hsiao-Wen Wuu, Dong- Sing Kuo, Hao-Chung Samukawa, Seiji Horng, Ray-Hua Institute of Electronics National Yang Ming Chiao Tung University 1001 University Road Hsinchu30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Materials Science and Engineering National Chung Hsing University Taichung40227 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation. © The Authors

关键词： Light emitting diodes

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

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Physical Review Applied 2022年第3期17卷 034016-034016页

作者： Z. Lin I. Volvach X. Wang V. Lomakin Department of Electrical and Computer Engineering University of California San Diego La Jolla California 92093 USA Center for Memory and Recording Research La Jolla California 92093 USA Materials Science and Engineering Program University of California San Diego La Jolla California 92093 USA

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

关键词： Magnetization dynamics Spin transfer torque Spin-orbit torque Spintronics Devices for digital logic, storage & processing Landau-Lifschitz-Gilbert equation Micromagnetic modeling Perturbation theory

Reconfigurable Intelligent Surface-Aided Joint Radar and Covert Communications: Fundamentals, Optimization, and Challenges

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arXiv 2022年

作者： Du, Hongyang Kang, Jiawen Niyato, Dusit Zhang, Jiayi Kim, Dong In The School of Computer Science and Engineering The Energy Research Institute @ NTU Interdisciplinary Graduate Program Nanyang Technological University Singapore The School of Computer Science and Engineering Nanyang Technological University Singapore The School of Electronic and Information Engineering Beijing Jiaotong University Beijing100044 China The Department of Electrical and Computer Engineering Sungkyunkwan University Suwon16419 Korea Republic of

Future wireless communication systems will evolve toward multi-functional integrated systems to improve spectrum utilization and reduce equipment sizes. A joint radar and communication (JRC) system, which can support simultaneous information transmission and target detection, has been regarded as a promising solution for emerging applications such as autonomous vehicles. In JRC, data security and privacy protection are critical issues. Thus, we first apply covert communication into JRC and propose a joint radar and covert communication (JRCC) system to achieve high spectrum utilization and secure data transmission simultaneously. In the JRCC system, an existence of sensitive data transmission is hidden from a maliciously observant warden. However, the performance of JRCC is restricted by severe signal propagation environment and hardware devices. Fortunately, reconfigurable intelligent surfaces (RISs) can change the signal propagation smartly to improve the networks performance with low cost. We first overview fundamental concepts of JRCC and RIS and then propose the RIS-aided JRCC system design. Furthermore, both covert communication and radar performance metrics are investigated and a game theory-based covert rate optimization scheme is designed to achieve secure communication. Finally, we present several promising applications and future directions of RIS-aided JRCC systems. © 2022, CC BY.

关键词： Data transfer

Cross-system biological image quality enhancement based on the generative adversarial network as a foundation for establishing a multi-institute microscopy cooperative network

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arXiv 2024年

作者： Panek, Dominik Rząca, Carina Szczypior, Maksymilian Sorysz, Joanna Misztal, Krzysztof Baster, Zbigniew Rajfur, Zenon Doctoral School of Exact and Natural Sciences Jagiellonian University ul. Lojasiewicza 11 Kraków30-348 Poland Department of Molecular and Interfacial Biophysics Faculty of Physics Astronomy and Applied Computer Science Jagiellonian University ul. Lojasiewicza 11 Kraków30‑348 Poland Undergraduate Program in Biophysics Faculty of Physics Astronomy and Applied Computer Science Jagiellonian University ul. Lojasiewicza 11 Kraków30‑348 Poland Undergraduate program in Biomedical Engineering Faculty of Electrical Engineering Automatics Computer Science and Biomedical Engineering AGH University of Science and Technology Al. A. Mickiewicza 30 Building B-1 Kraków30-059 Poland Division of Computational Mathematics Faculty of Mathematics and Computer Science Jagiellonian University 6 Lojasiewicza St. Kraków Poland

High-quality fluorescence imaging of biological systems is limited by processes like photobleaching and phototoxicity, and also in many cases, by limited access to the latest generations of microscopes. Moreover, low temporal resolution can lead to a motion blur effect in living systems. Our work presents a deep learning (DL) generative-adversarial approach to the problem of obtaining high-quality (HQ) images based on their low-quality (LQ) equivalents. We propose a generative-adversarial network (GAN) for contrast transfer between two different separate microscopy systems: a confocal microscope (producing HQ images) and a wide-field fluorescence microscope (producing LQ images). Our model proves that such transfer is possible, allowing us to receive HQ-generated images characterized by low mean squared error (MSE) values, high structural similarity index (SSIM), and high peak signal-to-noise ratio (PSNR) values. For our best model in the case of comparing HQ-generated images and HQ-ground truth images, the median values of the metrics are 6·10-4, 0.9413, and 31.87, for MSE, SSIM, and PSNR, respectively. In contrast, in the case of comparison between LQ and HQ ground truth median values of the metrics are equal to 0.0071, 0.8304, and 21.48 for MSE, SSIM, and PSNR respectively. Therefore, we observe a significant increase ranging from 14% to 49% for SSIM and PSNR respectively. These results, together with other single-system cross-modality studies, provide proof of concept for further implementation of a cross-system biological image quality enhancement. © 2024, CC BY-SA.

关键词： Fluorescence imaging

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

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TechRxiv

TechRxiv 2023年

作者： Jiang, Zhouhang Guo, Zixiang Luo, Xuyi Sayed, Munazza Faris, Zubair Mulaosmanovic, Halid Duenkel, Stefan Soss, Steven Beyer, Sven Gong, Xiao Kurinec, Santosh Narayanan, Vijaykrishnan Amrouch, Hussam Zhang, Enxia Fleetwood, Daniel M. Schrimpf, Ronald D. Ni, Kai The Microsystems Engineering Ph.D. Program The Mechanical Engineering Rochester Institute of Technology RochesterNY14623 United States The Department of Electrical and Computer Engineering Vanderbilt University NashvilleTN37235 United States University of Stuttgart Stuttgart70174 Germany Germany The Munich Institute of Robotics and Machine Intelligence Arcisstrasse 21 Munich80333 Germany The GlobalFoundries Fab1 LLC Dresden Germany The Department of Electrical Computer Engineering National University of Singapore 119077 Singapore The Department of Computer Science and Engineering Penn State University University ParkPA16802 United States The Department of Electrical and Microelectric Engineering Rochester Institute of Technology RochesterNY14623 United States

In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energy-efficient embedded nonvolatile memory (eNVM) for space applications. We demonstrate that: i) ferroelectric HfO2 thin film is robust against X-ray and proton irradiation;ii) FeFET exhibits a polarization state dependent radiation sensitivity where the high-VTH (HVT) state sees noticeable negative VTH shift and low-VTH (LVT) is immune to irradiation, irrespective of the channel type;iii) the state dependence is ascribed to the depolarization field in the HVT, which points toward the channel and facilitates the transport and trapping of radiation-generated holes close to the channel. In the future, radiation hardening techniques need to be considered. © 2023, CC BY.

关键词： Radiation effects

Microstructural analysis and electro-optic properties of thick epitaxial BaTiO3 films integrated on silicon (001)

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Physical Review Materials 2022年第9期6卷 095201-095201页

作者： Marc Reynaud Zuoming Dong Hyoju Park Wente Li Agham B. Posadas Jamie H. Warner Daniel Wasserman Alexander A. Demkov Department of Physics University of Texas at Austin Austin Texas 78712 USA Department of Electrical and Computer Engineering University of Texas at Austin Austin Texas 78758 USA Walker Department of Mechanical Engineering University of Texas at Austin Austin Texas 78712 USA Materials Science and Engineering Program and Texas Materials Institute The University of Texas at Austin Texas 78712 USA

Recent advances in epitaxial oxide deposition have enabled the fabrication of thick films of ferroelectric perovskite BaTiO3 capable of providing a robust electro-optic response via the Pockels effect in silicon photonic devices. We report a microstructure analysis of such films integrated on Si(001) by molecular beam epitaxy, showing how the crystallographic and polarization orientation change as a function of thickness. The measured electro-optic properties of the film correlate well with the microstructural analysis and demonstrate the potential of Si-integrated BaTiO3 for silicon photonics. An effective Pockels coefficient of up to 268 pm/V has been demonstrated in 110-nm-thick films in transmission measurements and 352 pm/V in waveguide measurements.

关键词： Ferroelectricity Photonics Epitaxy