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Growth of uniformly doped black phosphorus films through versatile atomic substitution

Science China(Information Sciences) 2023年第6期66卷 78-86页

作者： Cheng CHEN Yang LU Chang LI Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG School of Nano-Tech and Nano-Bionics University of Science and Technology of China CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China

For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

关键词： black phosphorus dope vapor growth thin film two-dimensional materials

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Ultra-stable Cu-based catalyst for dimethyl oxalate hydrogenation to ethylene glycol

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Chinese Journal of Chemical Engineering 2023年第8期60卷 186-193页

作者： Peipei Ai Huiqing Jin Jie Li Xiaodong Wang Wei Huang State Key Laboratory of Clean and Efficient Coal Utilization College of Chemical Engineering and TechnologyTaiyuan University of TechnologyTaiyuan 030024China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China

Dimethyl oxalate(DMO) hydrogenation is a crucial step in the coal to ethylene glycol(CTEG) ***, Cu catalyst supported on fibrous mesoporous silica(Cu/FMS) was synthesized via liquid phase deposition technique and applied for the DMO hydrogenation to EG. The catalyst exhibited a remarkable EG selectivity of 96.95% and maintained its activity without deactivation for 1000 h. Fibers of FMS support and liquid phase deposition technology cooperated to give high dispersion of Cu species in the Cu/FMS catalyst, resulting in a high Cu surface area. The formation of Si—O—Cu during catalyst preparation process increased the Cu^(+)/(Cu^(0)+ Cu^(+)) ratio and enhanced the thermal and valence stability of Cu *** high Cu^(+) surface area and Cu stability(thermal and valence stability) of the Cu/FMS catalyst were key factors for achieving superior EG selectivity and ultra-high stability.

关键词： Stability Cu^(+)surface area Fibrous mesoporous silica Catalyst Hydrogenation

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Insight into the growth mechanism of black phosphorus

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Frontiers of physics 2023年第4期18卷 111-127页

作者： Yongjie Wang Qiang Yu Jie Li Junyong Wang Kai Zhang Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China

Two-dimensional(2D)black phosphorus(BP)has attracted great attention in recent years in fundamental research as well as optoelectronics *** controllable synthesis of high-quality BP is vital to the investigation of its intrinsic physical properties and versatile ***,BP was mostly synthesized under high temperatures and ***,metal flux,wet chemical and chemical vapor transport(CVT)methods had been appeared *** pulsed laser deposition(PLD)and CVT methods have been used to prepare high-quality BP thin films on silicon substrates,which is significant for its monolithic integration and practical *** meet the demand of the scalable applications of BP,the direct preparation of BP films on dielectric substrates that avoids additional transfer process,is crucial to high-performance device *** this review,the growing methods and corresponding mechanisms of BP are summarized and ***,the view on the controllable growth of large-area,high-quality BP films is envisioned.

关键词： black phosphorus growth mechanism nucleation thin films

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Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

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Fundamental Research 2024年第2期4卷 369-378页

作者： Min Jiang Yukun Zhao Penghui Zheng Jianya Zhang Wenxian Yang Min Zhou Yuanyuan Wu Renjun Pei Shulong Lu Key Lab of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Nano-Bio Interface Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Nanchang Research Institute Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be ***,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated *** from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent *** to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 ***,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport *** the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent ***,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 *** an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors.

关键词： Flexible photodetector Bidirectional photocurrent Lift-off GaN-based nanowires Hydrogel Self-powered device

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Electrical control of excitonic oscillator strength and spatial distribution in a monolayer semiconductor

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nano Research 2024年第9期17卷 8424-8430页

作者： Yanming Wang Junrong Zhang Tianhua Ren Meng Xia Long Fang Xiangyi Wang Xingwang Zhang Kai Zhang Junyong Wang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacao 999078China College of New Energy Inner Mongolia University of TechnologyHohhot 010051China

Electrical modulation of luminescence is significant to modern light-emitting *** transition metal dichalcogenides are emerging direct-bandgap luminescent materials with unique excitonic properties,and the multiple exciton complexes provide new opportunities to modulate the property of luminescence in atomically thin ***,we report an electrical control of exciton emission in the oscillator strength and spatial distribution of excitons in a monolayer *** modulation of excitonic emission intensity with a degree of modulation of~92%has been demonstrated by an electric field at room *** spatial carrier redistribution tuned by a lateral electric field results in distinct excitonic emission patterns by *** modulation approach to exciton oscillator strength and distribution provides an efficient way to investigate the exciton diffusion dynamics and to construct electrically tunable optoelectronic devices.

关键词： monolayer semiconductor exciton electrical modulation spatial distribution

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Single-frequency linearly polarized Q-switched fiber laser based on Nb_(2)GeTe_(4)saturable absorber

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Chinese Physics B 2023年第7期32卷 382-386页

作者：陈思雨邓海芹张万儒戴永平王涛俞强李灿姜曼粟荣涛吴坚周朴 College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China Nanhu Laser Laboratory National University of Defense TechnologyChangsha 410073China CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China

We report a single-frequency linearly polarized Q-switched fiber laser based on an Nb_(2)GeTe_(4)saturable absorber(SA).The Nb_(2)GeTe_(4)SA triggers passive Q-switching of the laser,and an un-pumped Yb-doped fiber together with a 0.08-nmbandwidth polarization-maintaining fiber Bragg grating(FBG)acts as an ultra-narrow bandwidth filter to realize singlelongitudinal-mode(SLM)*** devices used in the laser are all kept polarized,so as to ensure linearly polarized laser *** SLM linearly polarized Q-switching operation at 1064.6 nm is successfully achieved,producing a laser with a shortest pulse width of 1.36μs,a linewidth of 28.4 MHz,a repetition rate of 28.3 kHz-95.9 kHz,and a polarization extinction ratio of about 30 *** is believed that the single-frequency linearly polarized pulsed fiber laser studied in this paper has great application value in gravitational wave detection,beam combining,nonlinear frequency conversion,and other fields.

关键词： fiber laser saturable absorber single-longitudinal-mode pulsed laser

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Phase transferring atomically precise gold nanoclusters to aqueous solution via single stranded DNA

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Science China Chemistry 2022年第6期65卷 1003-1004页

作者： Qiangbin Wang CAS Key Laboratory of Nano-Bio Interface Division of Nanobiomedicine and i-LabSuzhou Institute of Nano-Tech and Nano-BionicsSuzhou215123China

Atomically precise gold nanoclusters (Au NCs) are an emerging class of quantum-sized nanomaterials. The intrinsic discrete electronic energy levels endowed them with fascinating electronic and optical properties [1]. However,the prepared Au NCs are often protected with hydrophobic ligands and are not dispersible in aqueous solutions, which restricts their biological applications. To overcome this limitation, some phase transfer agents have been devoted to transferring hydrophobic Au NCs into the aqueous solution[2]. However, the resulting Au NCs are generally heterogeneous and aggregated, which makes their subsequent biofunctionalization difficult to control.

关键词： materials precise clusters

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High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_(x) gate insulator for high hole mobility

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Journal of Semiconductors 2023年第8期44卷 78-86页

作者： Liyang Zhu Kuangli Chen Ying Ma Yong Cai Chunhua Zhou Zhaoji Li Bo Zhang Qi Zhou State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsCASSuzhou 215123China Institute of Electronic and Information Engineering University of Electronic Science and Technology of ChinaDongguan 523808China

In this work,the GaN p-MISFET with LPCVD-SiN_(x) is studied as a gate dielectric to improve device *** changing the Si/N stoichiometry of SiN_(x),it is found that the channel hole mobility can be effectively enhanced with Si-rich SiN_(x) gate dielectric,which leads to a respectably improved drive current of GaN *** record high channel mobility of 19.4 cm2/(V∙s)was achieved in the device featuring an Enhancement-mode *** from the significantly improved channel mobility,the fabricated E-mode GaN p-MISFET is capable of delivering a decent-high current of 1.6 mA/mm,while simultaneously featuring a negative threshold-voltage(VTH)of–2.3 V(defining at a stringent criteria of 10μA/mm).The device also exhibits a well pinch-off at 0 V with low leakage current of 1 nA/*** suggests that a decent E-mode operation of the fabricated p-FET is *** addition,the VTH shows excellent stability,while the threshold-voltage hysteresisΔVTH is as small as 0.1 V for a gate voltage swing up to–10 V,which is among the best results reported in the *** results indicate that optimizing the Si/N stoichiometry of LPCVD-SiN_(x) is a promising approach to improve the device performance of GaN p-MISFET.

关键词： p-channel GaN p-FET LPCVD channel mobility hole mobility enhancement-mode

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Wafer-scale patterned growth of type-II Dirac semimetal platinum ditelluride for sensitive room-temperature terahertz photodetection

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InfoMat 2023年第5期5卷 17-27页

作者： Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhouJiangsuthe People's Republic of China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefeiAnhuithe People's Republic of China Songshan Lake Materials Laboratory DongguanGuangdongthe People's Republic of China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil *** recently,representative two-dimensional(2D)topological semimetal,platinum ditelluride(PtTe_(2))has attracted considerable research interest in THz detection due to its unique physical ***,to achieve practical applications,the low-cost,large-scale,controllable synthesis and efficient patterning of 2D materials are key requirements,which remain a challenge for PtTe_(2)and its photodetectors(PDs).Herein,a facile approach is developed to obtain waferscale(2-inches)patterned PtTe_(2)arrays using one-step tellurium-vapor transformation method and micro-nano ***_(2)PD arrays are fabricated with the as-grown PtTe_(2)arrays evenly distributed on a 2-inch wafer,exhibiting high conductivity(~2.7×105 S m^(-1))and good electrical *** by the Dirac fermions,PtTe_(2)PDs achieve a broadband(0.02-0.3 THz)response with a fast response speed(~4.7μs),a high sensitivity(~47 pW Hz^(-1/2))and high-resolution transmission THz-imaging capability,which displays the potential of large-area THz array *** results are one step towards the practical applications of integrated PD arrays based on 2D materials.

关键词： patterned growth photodetection platinum ditelluride terahertz wafer-scale

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Realize ultralow-energy-consumption photo-synaptic device based on a single(Al,Ga)N nanowire for neuromorphic computing

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nano Research 2024年第3期17卷 1933-1941页

作者： Xiushuo Gu Min Zhou Yukun Zhao Qianyi Zhang Jianya Zhang Yonglin Huang Shulong Lu College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Lab of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

The rapid development of artificial intelligence poses an urgent need for low-energy-consumption and small-sized artificial photonic ***,it is pretty novel to demonstrate a light-stimulated synaptic device based on a single(Al,Ga)N nanowire *** to the presence of vacancy defects in the single nanowire,the artificial synaptic device can simulate multiple functions of biological synapses under stimulation of both 310 and 365 nm light photons,including paired-pulse facilitation,spike timing dependent plasticity,and memory learning *** energy consumption of artificial synaptic device can be reduced as little as 5.58×10^(-13) J,which is close to that of the biological synapse in human ***,the synaptic device is demonstrated to have the high stability for both long-time stimulation and long-time *** on the experimental conductance of long-term potentiation and long-term depression,the simulated three-layer neural network can achieve a high recognition rate of 92%after only 10 training *** a brain-like behavior,the single-nanowire-based synaptic devices can promote the development of visual neuromorphic computing technology and artificial intelligence systems requiring ultralow energy consumption.

关键词： single(Al Ga)N nanowire light-stimulated synaptic device low-energy-consumption neural network

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