This work demonstrates the first nonpolar vertical GaN-on-GaN p-n power diodes grown on m-plane free-standing substrates by metalorganic chemical vapor deposition (MOCVD). The SEM and HRXRD results showed the good cry...
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Fabrication of 3D scaffolds with patient-specific designs, high structural and component complexity, and rapid on-demand production at a low-cost by printing technique has attracted ever-increasing interests in tissue...
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Fabrication of 3D scaffolds with patient-specific designs, high structural and component complexity, and rapid on-demand production at a low-cost by printing technique has attracted ever-increasing interests in tissue engineering. Cell-laden 3D bioprinting offers good prospects for future organ transplantation. Compared with nonbiological 3D printing, cell-laden 3D bioprinting involves more complex factors, including the choice of printing materials, the strategy of gelling, cell viability and technical challenges. Although cell-populated 3D bioprinting has so many complex factors, it has proven to be a useful and exciting tool with wide potential applications in regenerative medicine to generate a variety of transplantable tissues. In this review, we first overview the bioprinting materials, gelling strategies and some major applications of cell-laden 3D bioprinting, with main focus on the recent advances and current challenges of the field. Finally, we propose some future directions of the cell-populated 3D bioprinting in tissue engineering and regenerative *** this review, we first overview the bioprinting materials, gelling strategies and some major applications of cell-populated 3D bioprinting, with main focus on the recent advances and current challenges of the field. Finally, we propose some future directions of the cell-laden 3D bioprinting in tissue engineering and regenerative medicine.
Correction for ‘Constructing hierarchical dandelion-like molybdenum–nickel–cobalt ternary oxide nanowire arrays on carbon nanotube fiber for high-performance wearable fiber-shaped asymmetric supercapacitors’ by Ju...
Correction for ‘Constructing hierarchical dandelion-like molybdenum–nickel–cobalt ternary oxide nanowire arrays on carbon nanotube fiber for high-performance wearable fiber-shaped asymmetric supercapacitors’ by Juan Sun et al., J. Mater. Chem. A, 2017, 5, 21153–21160.
Titanium nitride(TiN) as a refractory plasmonic material is proposed to be used as an angle-insensitive integrated broadband solar absorber and narrowband near-infrared(NIR) emitter for solar thermo-photovoltaic(STPV)...
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Titanium nitride(TiN) as a refractory plasmonic material is proposed to be used as an angle-insensitive integrated broadband solar absorber and narrowband near-infrared(NIR) emitter for solar thermo-photovoltaic(STPV) application. By constructing TiN-nanopatterns/dielectric/TiN stack metamaterial, approximately 93% light absorption in a wavelength range of 0.3–0.9 μm and near unit narrowband(Δλ∕λ～0.3) emission in NIR(～2 μm) were demonstrated by numerical simulation. Keeping the excellent light absorption in the visible band, the emission wavelength can be easily tuned by patterning the top TiN layer into various subwavelength structures. This dual function attributes to the intrinsic absorption and plasmonic property of TiN. In such an integrated structure,broadband absorption and narrowband emission need to be balanced for an optimized power efficiency conversion. Detailed analysis has demonstrated that the STPV system based on this integrated absorber/emitter canexceed the Shockley–Queisser limit at 1000 K.
The metamorphic Al(Ga)InAs buffers grown on (001) GaAs substrates withmisorientations of 2°, 7°and15° toward (111) A by low pressure metalorganic chemical vapor deposition are characterized by high reso...
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The metamorphic Al(Ga)InAs buffers grown on (001) GaAs substrates withmisorientations of 2°, 7°and15° toward (111) A by low pressure metalorganic chemical vapor deposition are characterized by high resolution X-ray diffiactometer and atomic force microscopy(AFM).The photoluminescence (PL) spectra of the InP cap layers are measured by an RPM 2000 system with a 980 nm excitation *** results indicate an InP layer with the smallest surface roughness of 6.59 nm and the strongest PL intensity is achieved on the 15° off GaAs substrate showing a good control of the treading dislocation in the Al(Ga)InAs buffers.
Single (1 0 0)-oriented Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films were achieved on SrTiO 3 (1 0 0) substrate using laser molecular beam epitaxy technique. The effects of growth temperature and...
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Single (1 0 0)-oriented Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films were achieved on SrTiO 3 (1 0 0) substrate using laser molecular beam epitaxy technique. The effects of growth temperature and oxygen partial pressure on crystal quality and negative temperature coefficient characteristics were studied by XRD, RHEED, AFM, SEM, resistance–temperature measurements and impedance spectrum. The results showed that the growth direction (4 0 0) of epitaxial Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films was parallel to SrTiO 3 (1 0 0) substrate and the best NTC characteristic with B value of about 3000 K was found in the Mn 1.56 Co 0.96 Ni 0.48 O 4 thin films grown at 500 °C with Po 2 = 5 × 10 −3 Pa for 3 h. Such thin films are desirable for a wide range of practical applications in the NTC thermistors.
An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is *** laser diode structure is grown on a GaN substrate by metal-organic chemical vapor *** laser diode array consists of five e...
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An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is *** laser diode structure is grown on a GaN substrate by metal-organic chemical vapor *** laser diode array consists of five emitter stripes which share common electrodes on one laser *** electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse *** laser diode array emits at the wavelength of 409 nm,which is located in the blue-violet region,and the threshold current is 2.9 *** maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.
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