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检索条件"机构=CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors"

共 13 条记录，以下是1-10 订阅

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Electromigration Reliability of Buried Power Rails in Vertically Stacked devices

Electromigration Reliability of Buried Power Rails in Vertic...

引用

2023 IEEE International Integrated Reliability Workshop, IIRW 2023

作者： Filipovic, Lado De Orio, Roberto Lacerda TU Wien CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors The Institute for Microelectronics Vienna1040 Austria TU Wien Institute for Microelectronics Vienna1040 Austria

ISBN: (纸本)9798350327274

We apply a compact model for electromigration (EM) to study the build-up of vacancy-induced stress in a buried power rail (BPR) for vertically stacked complementary field-effect transistor (CFET) devices. We observe the highest impact of EM in the M1 copper line, at its interface with a ruthenium interconnect. We further note that the presence of a TiN barrier results in a slight increase in the EM stress. This stress saturates at a relatively low level, likely due to back-migration resulting from the short-length effect (SLE). Vacancy accumulation, which is formed due to EM is primarily counter-driven by stress migration due to high stress gradients. Therefore, the relatively small height of the copper line, at 25nm, prevents the build-up of very high stresses, which ultimately helps limit further vacancy accumulation and stress. In addition, we study how the presence of grains in the copper line impacts the EM behavior, noting that stress increases as the grain sizes decrease. © 2023 IEEE.

关键词： Electromigration

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Spline Interpolation-Based multi-scale Model for Etching in a Chlorine-Argon Inductively Coupled Plasma 24

Spline Interpolation-Based Multi-Scale Model for Etching in ...

引用

Proceedings of the Winter Simulation Conference

作者： Lado Filipovic Tobias Reiter CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors at the Institute for Microelectronics TU Wien Vienna AUSTRIA

ISBN: (纸本)9798331534202

A multi-variable spline interpolation is used in order to quickly obtain the wafer incident fluxes from inside an inductively coupled plasma chamber with a chlorine and argon chemistry. The data is obtained by performing a total of 18 750 chamber simulations while varying the inputs which include the inductive coil power, the gas flow rate, the chamber pressure, the chlorine gas concentration ratio, the temperature, and the applied bias voltage. The data is used to generate a six-dimensional hypercube for each flux of interest where each dimension corresponds to one of the varied parameters. The fluxes are then incorporated into a semi-empirical feature scale plasma etching model in the process simulation tool ViennaPS. The chemical sticking coefficient is derived from measurements and the model includes the etch rate resulting from the chemical etch component, ion sputtering, and ion-enhanced etching.

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Spline Interpolation-Based multi-scale Model for Etching in a Chlorine-Argon Inductively Coupled Plasma

Spline Interpolation-Based Multi-Scale Model for Etching in ...

引用

Simulation Winter Conference

作者： Lado Filipovic Tobias Reiter CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors at the Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331534202

ISBN: (纸本)9798331534219

关键词： Temperature distribution Computational modeling Chlorine Tin Ions Hypercubes Etching Plasmas Splines (mathematics) Plasma temperature

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Physics-Informed Compact Model for SF6/O2 Plasma Etching

Physics-Informed Compact Model for SF6/O2 Plasma Etching

引用

International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Lado Filipovic Josip Bobinac Julius Piso Tobias Reiter CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

We propose a process simulation/emulation flow which incorporates the generation and application of compact models for fast geometry generation, suitable for design-technology co-optimization (DTCO). The methodology is applied to develop a compact model for etching in a SF 6 /O 2 plasma using 35 data points from experimental measurements and results from a calibrated physical model. The compact model is tested against physical simulations using 80 random points in the input parameter domain consisting of varying the oxygen content and pressure in the plasma chamber. The model is shown to produce highly accurate geometries with an average error for the depth and width at half depth (WAHD) of 2.0% and 1.0%, respectively. The simulation speedup is more than three orders of magnitude, when compared to the physical model; it should also be noted that the parallelized physical model was executed on 40 cores, while the compact model was run on a single core.

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MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4H-SiC

MD Simulation of Epitaxial Recrystallization and Defect Stru...

引用

International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Sabine Leroch Robert Stella Andreas Hössinger Lado Filipovic CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors at the Institute for Microelectronics TU Wien Vienna Austria Silvaco Europe Ltd. St Ives Cambridgeshire United Kingdom

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

We have performed a molecular dynamics study for the recrystallization of Al-implanted 4H-SiC in dependence of annealing temperature and time. We show in that the principal physical picture of recrystallization is in line with experiments and former MD simulations with respect to the activation energy of recrystallization and its onset temperature (the minimum temperature necessary to initiate full recyrstallization of amorphous SiC). The annealed structures are poly-crystalline and show point defects, defect complexes, but also extended defects like interstitial clusters and stacking faults in dependence of the annealing temperature. Most of the residual defects are thermally stable and need longer annealing times than those accessible with MD simulations alone.

关键词： Temperature distribution Temperature dependence Annealing Silicon carbide Stacking Simulated annealing semiconductor process modeling Epitaxial growth Thermal stability Periodic structures

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Equipment-Informed Machine Learning-Assisted Feature-scale Plasma Etching Model

Equipment-Informed Machine Learning-Assisted Feature-Scale P...

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International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Lado Filipovic Tobias Reiter Julius Piso Roman Kostal Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

We investigate means to merge feature-scale and reactor-scale models during plasma etching using Machine Learning (ML) and interpolative approaches. First, we test the SF6 plasma etching models based on a small dataset from literature. We find that Gaussian process Regression (GPR) leads to significant over-fitting, resulting in waviness in the predicted values in the range where no data is available. A Neural Network (NN) model was likewise implemented with rectified linear unit activation. This model provides linear prediction between known values, resulting in a better qualitative fit to experimental observations. Finally, we perform 18 750 chamber simulations of a $\mathrm{C}1_process/\text{Ar}$ plasma while varying relevant input parameters. The data is used to build a six-dimensional spline-based inerpolative model of the chamber and provide a means to quickly extract relevant fluxes for the feature-scale model.

关键词： Sulfur hexafluoride Machine learning Gaussian processes Predictive models Feature extraction Etching Data models semiconductor process modeling Plasmas Splines (mathematics)

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Molecular dynamics study of Al implantation in 4H-SiC

Molecular dynamics study of Al implantation in 4H-SiC

引用

International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Sabine Leroch Robert Stella Andreas Hössinger Lado Filipovic CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria Silvaco Europe Ltd. United Kingdom

We have performed a molecular dynamics study of Al-implantation in 4H-SiC while investigating the types of defects produced and their quantity depending on the implantation temperature and dose. The damage to the SiC lattice should be minimized to facilitate the subsequent Al activation during annealing. Using the empirical Gao-Weber potential, together with a recently proposed Morse potential for the Al-SiC interaction, we show that implantation at elevated temperatures considerably reduces the creation of amorphous pockets and extended defect clusters. In a follow-up annealing study we aim to provide a correlation between dose/implantation temperature and the Al activation rate to give guidance for future fabrication of SiC devices.

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Electromigration Reliability of Buried Power Rails in Vertically Stacked devices

Electromigration Reliability of Buried Power Rails in Vertic...

引用

IEEE International Workshop Integrated Reliability

作者： Lado Filipovic Roberto Lacerda de Orio CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors at the Institute for Microelectronics TU Wien Vienna Austria Institute for Microelectronics TU Wien Vienna Austria

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modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs

Modeling Non-Uniformity During Two-Step Dry Etching of Si/Si...

引用

International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Ziyi Hu Lado Filipovic Junjie Li Lingfei Wang Zhicheng Wu Rui Chen Yayi Wei Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an inner-spacer. Non-uniformity of substrate surface during wet or dry selective etching of SiGe is a common sight in industry, which cannot be modeled using standard process Technology Computer Aided Design (TCAD) approaches. In this paper, we propose a method for the continuous simulation of the two-step dry etching process - anisotropic etching of the Si/SiGe stack and subsequent isotropic selective etching of SiGe - to study the mechanism behind the non-uniform profile formation. The proposed method is able to simulate the non-uniform profile accurately, which was calibrated and verified with experimental data.

关键词： Industries Fabrication Design automation Dry etching Field effect transistors Logic gates semiconductor process modeling Substrates Standards Silicon germanium

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Cluster-Based Semi-Empirical Model for Dopant Activation in Silicon Carbide

Cluster-Based Semi-Empirical Model for Dopant Activation in ...

引用

International Conference on Simulation of semiconductor processes and devices (SISPAD)

作者： Balazs Bamer Sabine Leroch Andreas Hossinger Lado Filipovic Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria Silvaco Europe Ltd. St Ives Cambridgeshire United Kingdom

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

We present a cluster-based semi-empirical model for dopant activation in silicon carbide (SiC). We model the following species: dopants on lattice points, point defects, dopant-defect pairs, and small clusters of different sizes. We define the possible reactions between these species, add their reaction kinetics, and use a system of ordinary differential equations (ODEs) to model the time evolution of the concentration of the different species during annealing. We use the MaxLIPO+TR optimizer to obtain the post-implant conditions of the SiC film, including the various cluster concentrations. These concentrations are not measurable and can only be calculated through time-intensive atomistic simulations, which we apply to verify and calibrate our model. The framework presented here, consisting of an ODE model generator, an ODE solver and an optimizer, gives a practical solution to predict as-implanted defect concentrations, which is missing from previous works.

关键词： Atomic measurements semiconductor device measurement Annealing Silicon carbide Lattices Predictive models Ordinary differential equations Mathematical models Silicon semiconductor process modeling

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