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Annual International conference of the IEEE engineering in Medicine and Biology Society (EMBC)

作者： Junpei Nishiyama Koji Tanida Masashi Kusumi Yutaka Hirata Department of Computer Science Chubu University College of Engineering Kasugai Japan researchers Honda R&D Co. Ltd. Automobile R&D Center Department 4 Technology Research Division 2. e-mail: Koji_Tanida@n.t.rd.honda.co.jp Automobile Research and Development Center Department Technology Research Division Japan

Prediction of drowsiness based on an objective measure is demanded in machine and vehicle operations in which human errors may cause fatal accidents. Currently we focused on the pupil of the eye which is controlled by the autonomic nervous system, and easily observable non-invasively from the outside of the body. We employed uneventful driving simulation to induce drowsiness of human subjects, and an anti-saccade task to evaluate their cognitive and motor performance. First we confirmed that pupil diameter fluctuates with large amplitude at low frequencies when the subject is aware of his/her drowsiness as reported previously. during this period, the latency of anti-saccade initiation was elongated and varied. We then found that prior to this fluctuation, pupil diameter decreases gradually in most subjects, and they were not aware of sleepiness during this period. We conclude that this monotonic gradual miosis can be a reliable premonitor of drowsiness.

关键词： Humans Vehicles Autonomic nervous system Frequency Fluctuations Signal design computer science Automotive engineering research and development Accidents

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Nanophotonic switch using one-dimensional ZnO double-quantum-well structures

Nanophotonic switch using one-dimensional ZnO double-quantum...

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conference on Lasers and Electro-Optics (CLEO)

作者： T. Yatsui S. Sangu T. Kawazoe M. Ohtsu S. J. An J. Yoo G.-C. Yi SORST Japan Science and Technology Agency Tokyo Japan Ricoh Co. Ltd. Advanced Technology R&D Center Kanagawa Japan Department of Materials Science and Engineering National CRi Center for Semiconductor Nanorods Pohang Gyeongbuk Korea

We observed spectral switching and evaluated its dynamics by controlling the dipole- forbidden optical near-field energy transfer among resonant exciton states using ld-ZnO nanorod double-quantum-well structures.

ISBN: (纸本)9781424435906

关键词： Switches Zinc oxide Laser excitation Optical control Energy exchange Excitons Ultrafast optics Energy states Optical harmonic generation Nanoscale devices

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Synonymous codon Usage Bias and Overexpression of a Synthetic Gene Encoding Interferon α2b in Yeast

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中国病毒学 2007年第3期22卷 226-232页

作者： Bin FANG　 Bu-feng LIANG　 Guang-yuan HE China-UK HUST-RRes Genetic Engineering and Genomics Joint Lab Huazhong University of Science and Technology （HUST） Wuhan 430074 China Joint R＆D Lab （Suzhong Pharma Co. Ltd） IHS Wuhan Institute of Virology Chinese Academy of Sciences Wuhan 430071 China

To achieve higher level expression of Interferon α2b(IFN-α2b)in methylotrophic yeast(Pichia pastoris),a cdNA fragment coding for the mature IFN-α2b was designed and synthesized based on the synonymous codon bias of *** and optimized G+C *** synthetic IFN-α2b was inserted into the secreted expression vector pPICZαA,and then integrated into *** GS115 genome by ***-copy integrants in the Mut+ recombinant *** strain were screened by high concentrations of Zeocin.120 hours culturing allowed expression of the IFN-α2b transformant up to 810 mg/L as detected by SdS-PAGE and quantitative *** addition,Western blot analysis showed that the recombinant proteins had *** significant antiviral activity of the recombinant IFN-α2b protein was verified by WISH/VSV system,which was 3.3×105 IU/mL.

关键词：酵母菌干扰素-α2b 同义密码子基因表达过表达

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A color-Free WdM-PON Employing Fabry-Prot Laser diodes Without a Seed Light Injection

A Color-Free WDM-PON Employing Fabry-Prot Laser Diodes Witho...

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33rd European conference and Exhibition of Optical communication

作者： Sil-Gu Mun Jung-Hyung Moon Ki-Man Choi Jin-Serk Baik Chang-Hee Lee School of Electrical Engineering and Computer Science Korea Korea Advanced Institute of Science and Technology 373-1 Guseoung-dong Youseoung-gu Daejeon 305-701 Korea Telecommunication R&D Center Samsung Electronics Co. Ltd. Suwon 442-743 Korea

We demonstrate a WdM-PON by employing a double-contact Fabry-Prot Laser diodes without a seed light injection. To avoid the high MPN at low frequency, we use a BPSK as a modulation format at a low rIN window. An error... 详细信息

关键词： Binary phase shift keying Bit error rate Optical signal processing Wavelength measurement Arrayed waveguide gratings Gratings Optical fiber subscriber loops

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GaN HEMT Based doherty Amplifier for 3.5-GHz WiMAX Applications

GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applicati...

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European conference on Wireless technology

作者： Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim Department of Electrical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea Telecommunication Research & Development Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Telecommunication R&D Center Samsung Electronics Co. LTD Suwon Gyeonggi Republic of Korea

We have implemented a doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the doherty amplifier. The implemented doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured relative constellation Error (rCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.

关键词： Gallium nitride HEMTs WiMAX Power amplifiers Microwave amplifiers Linearity Power generation Power measurement Microwave devices MOdFETs

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High Efficiency GaN HEMT Power Amplifier optimized for OFdM EEr Transmitter

High Efficiency GaN HEMT Power Amplifier optimized for OFDM ...

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2007 IEEE/MTT-S International Microwave Symposium (IMS 2007), vol.4

作者： Sungchul Hong Young Yun Woo Ildu Kim Jangheon Kim Junghwan Moon Han Seok Kim Jong Sung Lee Bumman Kim Telecommunication R&D Center Samsung Electronics co. LTD Suwon Gyeonggi Republic of Korea Department of Electrical Engineering Pohang University of Science and Technology(POSTECH) Gyeongbuk Republic of Korea

We have proposed a highly efficient power amplifier (PA) for the Envelope Elimination and restoration (EEr) transmitter using Gallium Nitride (GaN) HEMT. The class AB, B, C and F mode PAs have been implemented with EUdYNA's 10 watts GaN HEMT and compared the bias modulation performances in order to investigate the optimum PA structure. The proposed class F mode PA has been biased at class C and adopted a new output matching topology that improves the overall transmitter efficiency. For the WiMAX OFdM signal, the calculated overall drain efficiencies of the optimized EEr amplifier, which are based on the measured bias dependent efficiencies, are about 73% at an average power of 31dBm at 2.14GHz. The proposed highly efficient bias modulation PA for the EEr transmitter provides a superior overall efficiency than that of any conventional switching or saturation mode PAs.

关键词： Gallium nitride HEMTs High power amplifiers Transmitters OFdM modulation III-V semiconductor materials Impedance matching Topology WiMAX Power amplifiers

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OL-2-25 Biodiesel production in supercritical fluid condition using mixed enzyme system

OL-2-25 Biodiesel production in supercritical fluid conditio...

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2007生物炼制国际会议(The International conference on Biorefinery)

作者： Jong Ho Lee Yoon Seok Song Jin Young Lee dong Hwan Lee Jung Soo Lim Beomseok Tae Seung Wook Kim Digital Appliances R&D Team Samsung Electronics Co.Ltd. 416 Maetan-3Dong Yeongtong-Gu Suwon-City Gyeonggi-Do Korea 443-742 Department of Chemical and Biological Engineering Korea University 5-1 Anam-dong Sungbuk-gu Seoul 136-701 Korea New & Renewable Energy Dept Samsung Corporation Seohyeon-Dong Bundang-Gu Sungnam-Gu Kyonggi-Do Korea Department of Chemical Engineering Hankyong National University 67 Sukjung-dong Ansung-city Kyonggi-do 456-749 Korea

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Novel Heat dissipating Cell Scheme for Improving a reset distribution in a 512M Phase-change random Access Memory (PrAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

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Symposium on VLSI technology

作者： d.H. Kang J.S. Kim Y.r. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong d.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. ryoo J.M. Shin d.W. Lim S.S. Park J.H. Kim W.I. Park K.r. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization degradation Amorphous materials Writing resistance heating Temperature Phase change materials Switches cooling

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Two-step activation of glass-like carbon spheres – An approach to high yield activation

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Carbon 2007年第11期45卷 2321-2321页

作者： Li-hong Wang Masahito Fujita Masahiro Toyoda Michio Inagaki Central R&D Daido Metal Co. Ltd. Maehara Inuyama 484-0061 Japan Faculty of Engineering Oita University Dannoharu Oita 870-1192 Japan Faculty of Engineering Aichi Institute of Technology Yakusa Toyota 470-0392 Japan

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Effects of the different Supports on the Activity and Selectivity of Iron-cobalt Bimetallic Catalyst for Fischer-Tropsch Synthesis

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Journal of Natural Gas Chemistry 2006年第4期15卷 335-339页

作者： Xiangdong Ma Qiwen Sun Fahai Cao Weiyong Ying dingye Fang State key Laboratory of Chemical Engineering School of Chemical Engineering East China University of Science and Technology Shanghai 200237 China Shanghai Yankuang Energy R＆D Co. Ltd. Shanghai 201203 China

Silica, alumina, and activated carbon supported iron-cobalt catalysts were prepared by incipient wetness impregnation. These catalysts have been characterized by BET, X-ray diffraction （Xrd）, and temperature-programmed reduction （TPr）. Activity and selectivity of iron-cobalt supported on different carriers for co hydrogenation were studied under the conditions of 1.5 MPa, 493 K, 630 h^-1, and H2/co ratio of 1.6. The results indicate that the activity, C4 olefin/（C4 olefin＋C4 paraffin） ratio, and C5 olefin/（C5 olefin＋C5 paraffin） decrease in the order of Fe-co/SiO2, Fe-co/AC1, Fe-co/Al2O3 and Fe- co/AC2. The activity of Fe-co/SiO2 reached a maximum. The results of TPr show that the Fe-co/SiO2 catalyst is to some extent different. Xrd patterns show that the Fe-co/SiO2 catalyst differs significantly from the others; it has two diffraction peaks. The active spinel phase is correlated with the supports.

关键词： Fischer-Tropsch synthesis bimetallic catalyst iron cobalt support silica alumina active carbon syngas

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