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Some Items of Interest to Process r&d Chemists and Engineers

Organic Process research & development 2015年第10期19卷 1369-1373页

作者： John Knight Sylvain Guizzetti Wenyi Zhao James A. Schwindeman dongbo Zhao J-KONSULT Ltd. 1 Beechwood Lane Heathfield East Sussex TN21 8QQ U.K. The Zlota Company LLC 15 Fairbanks Road Sharon Massachusetts 02067-2858 United States. E-mail: Pfizer Chemistry 10578 Science Center Drive San Diego California 09121 United States. E-mail: Bristol-Myers Squibb Chemical Development One Squibb Drive New Brunswick New Jersey 08903 United States. E-mail: Jacobus Pharmaceutical Co. Inc. Princeton New Jersey 08540 United States. E-mail: Bayer Technology & Engineering (Shanghai) Co. Ltd. 82 Mu Hua Road Shanghai Chemical Industry Park Shanghai 201507 P. R. China. E-mail: NovAlix Building A: Chemistry Bioparc Bld Sébastien Brant BP 30170 F-67405 Illkirch Cedex France. E-mail: Polyurethane Process R&D The Dow Chemical Co. Freeport TX 77541 United States. E-mail: Rohner Inc. 4066 Belle Meade Circle Belmont NC 28012 United States. E-mail:

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Surface passivation of c-Si by Atomic Layer deposition TiO2 thin films deposited at low temperature

Surface passivation of c-Si by Atomic Layer Deposition TiO2 ...

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2014 IEEE 40th Photovoltaic Specialist conference (PVSC)

作者： Ing-Song Yu I-Hsuan Chang Hsyi-En- Cheng Yung-Sheng Lin Department of Materials Science and Engineering National Dong Hwa University Hualien Taiwan R.O.C. Department of Electro-Optical Engineering Southern Taiwan University of Science and Technology Tainan Taiwan R.O.C. R&D Department E-Ton Solar Tech. Co. LTD. Tainan Taiwan R.O.C.

ISBN: (纸本)9781479943975

For the silicon surface passivation, we investigate titanium dioxide (TiO 2 ) deposited on p-type FZ silicon wafer by Atomic Layer deposition (ALd) technique at low temperature as 200°. In the repost, four kinds of film thickness: 8 nm, 15 nm, 35 nm and 66 nm were proposed, and we found amorphous TiO 2 thin film with thickness 8 nm have very good surface passivation properties on Si, and its surface recombination velocity can be lowered to 44.24 cm/s, which is good for the applications in crystalline silicon solar cells. However, we find the surface passivation properties decline as increasing the thickness of TiO 2 films. From the characterization of Scanning Electron Microscopy (SEM), Grazing Incidence X-ray (GIXrd), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and stress measurements of thin film, TiO 2 anatase phase forms due to the stress inducing phase transformation, and surface roughness increases a lot for thicker TiO 2 films. The phase transformation and surface roughening make the defects formation at the interface of Si and TiO 2 , which increase surface recombination velocity.

关键词： Films Silicon Photovoltaic cells Microscopy Annealing Indexes radio frequency

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Erratum: “Effect of hydrothermal condition on the formation of multi-component oxides of Ni-based metallic glass under high temperature water near the critical point” [AIP Advances 5, 077132 (2015)]

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AIP Advances 2015年第12期5卷

作者： J. S. Kim S. Y. Kim d. H. Kim r. T. Ott H. G. Kim M. H. Lee Headquarters Bearing Division Iljin Global Co. Ltd. Seoul 135-875 South Korea Rare Metals R&D Group Korea Institute of Industrial Technology Incheon 406-840 South Korea Center for Noncrystalline Materials Yonsei University Seoul 120-749 South Korea Division of Materials and Engineering Ames Laboratory US DOE Ames Iowa 50011 USA LWR Fuel Technology Division Korea Atomic Energy Institute Daejeon 305-600 South Korea

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Joining of Pc and Pmma by Inserting Their Injection Molding Blends into the Interface

Joining of Pc and Pmma by Inserting Their Injection Molding ...

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The 11th China-Japan joint conference on composite Materials(第十一届中日复合材料学术会议)

作者： Eiichi Sakai Jianhui Qiu Genki Watanabe Kento Sasaki Departnent of Machine Intelligence and Systems Engineering Facultyof System Science and TechnologyAkita Prefectural University84-4 Tsuchiya EbinokuchiYurihonjoAkita015-0055Japan Panasonie System Networks R&D Lab.Co.Ltd.2-5 Akedorilzumi-kuSendaiMiyagi981-3206Japan

Polycarbonate (PC)-poly (methyl methacrylate) (PMMA) joints were prepared by injection welding of inserting their *** shear strength of the interface was measured in relation to the blend ratio of inserted PC/*** highest strength of about 23.7 MPa was shown in the joint specimen inserting PC/PMMA with the blend ratio of 75:25 (PC:PMMA).

关键词： Polycarbonate (PC) Poly (methyl methacrylate) (PMMA) blends Joint strength Interface

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Study on a novel CMP/P-CVM fusion processing system (Type B) and its basic characteristics

Study on a novel CMP/P-CVM fusion processing system (Type B)...

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International conference on Planarization/CMP technology (ICPT)

作者： Koki Oyama Yasuhisa Sano Hideo Aida Seongwoo Kim Hideakli Nishizawa Toshiro K. doi Syuhei Kurokawa Tadakazu Miyashita Tsutomu Yamazaki Namiki Precision jewel Co.LTD NJC Institute Technology Adachi-ku Tokyo Japan KASTEC Kyushu University Kasuga-shi Fukuoka Japan Dept of precision science and technology Osaka University Suita-shi Osaka Japan Dept of Mechanical Engineering Kyushu University Nishi-ku Fukuoka Japan R&D Department Fujikoshi Machinery Corporation Nagano Japan

In this study, we are aiming to establish a high-efficiency, high-quality polishing process of the hard-to-process materials. recently high-grade semiconductor substrates are made by various processing methods. CMP (Chemical Mechanical Polishing) is a main processing method to planarize a substrate. On the other hand, P-CVM is a superior processing method which does not damage the substrate surface. To achieve high-efficiency, high-quality processing, we designed an innovative fusion CMP/P-CVM processing machine and produced it experimentally. Through investigation of a fundamental property of the CMP/P-CVM fusion processing machine, we confirmed increase in removal rate and reduction of the surface roughness by the synergistic effects.

关键词： Substrates Surface treatment Silicon carbide rough surfaces Surface roughness diamonds

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development of concept analysis and multi-objective optimization platform for body-in-white structure

Development of concept analysis and multi-objective optimiza...

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FISITA 2012 World Automotive congress

作者： Li, Yiwen Li, Hongjian Pan, Zuofeng Xu, Tao R and D Center FAW Changchun China State Key Lab. of Comprehensive Technology on Automobile Vibration and Noise and Safety Control China FAW Co.Ltd. R and D Center Changchun China College of Mechanical Science and Engineering Jilin University Jilin China

ISBN: (纸本)9783642338342

To achieve the integrated control of body-in-white (BIW) performance at the concept design stage, several parametrical optimization technologies are proposed in this paper in seeking lightweight, stiffness and crashworthiness targets. A professional platform - concept Analysis and Multi-objective Optimization (CAMO) is developed, which has the capability of the rapid reduction, parametrical simulation and optimization. The optimization algorithms database is developed based on. NET framework to ensure the global convergence and robustness of the optimal results. The theories discussed in the paper are great help of the concept design process improvement, body database development and knowledge utilization. © Springer-Verlag 2013.

关键词： Multiobjective optimization

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Optimization of Elevator Production Line in Its Flexible Improvement by the Value Stream Mapping Tool

Optimization of Elevator Production Line in Its Flexible Imp...

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2013 International conference on Materials engineering and Mechanical Automation(MEMA 2013)

作者： Weijie Wu Guojie Ye Department of Mechanical & Electrical Engineering Shunde Polytechnic Department of R&D Guangzhou Otis Elevator Co.Ltd.

The mixed model elevator controller production line flexible optimization project is *** production bottleneck has been deeply analyzed and illustrated by the Value Stream Mapping *** stream analysis of the elevation controller production line status including dividing production,determining take time and visualizing production and problem analysis are *** logistic moving distance is reduced from 501.8 m to 311.7 meters,the Cycle time,manufacturing time,number of operator and working hours are significantly reduced by 12.4%,16.1%,20%,18.79%and 81.15%respectively.

关键词： Value Stream Mapping Tool Flexible Production Model Elevator controller

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Interactions Between LiFePO4 and Binders in Water-Based Electrode Slurries

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ECS Meeting Abstracts 2014年第2期MA2014-01卷

作者： Chia-Chen Li Feng-Yen Tsai Han-Wei Hsieh Chih-An Tung Department of Materials and Mineral Resources Engineering National Taipei University of Technology Institute of Materials Science and Engineering National Taipei University of Technology R&D Department Advanced Lithium Electrochemistry Co. Advanced Lithium Electrochemistry Co. Ltd.

Since 1997, lithium iron phosphate (LiFePO4) has been well-known as a potential cathode-active material for a lithium-ion battery because of its advantages of having large theoretical capacity, good cycle-life performance and better safety. Nevertheless, LiFePO4 has other disadvantages, such as its poor electrical conductivity and low diffusion for lithium ions (Li+), and thus it is common for the commercial LiFePO4 to have surface coating of conductive materials, which carbon is the most popular one, to enhance the electrical conductivity and the Li+ diffusivity. On the other hand, for considerations of environmental consistency and low cost, the technique of fabricating electrodes based on a water-based process by using water as the mixing solvent and water compatible polymer as the binder is gaining favor and has attracted significant interest. In this investigation, the interactions between the cathode active powder, LiFePO4, and the water soluble binder, SBr and CMC binder blend, in the water-based electrode slurries were discussed. The experimental results showed that the factor of the quality of the surface carbon coating on LiFePO4 dominated the interactions between LiFePO4 and the binder. When the surface carbon coating on the active powder was less completed and showing more exposure of the inner LiFePO4, the active powder gelled with the binder significantly and caused the as-prepared water-based electrode slurry to exhibit poorer dispersion property and higher elastic flow behavior. The poorer dispersion of slurry resulted in a less-uniform distribution of compositions in the dried electrode sheets and harmed the electrochemical performance. In addition, the initial mechanism for the gelation of LiFePO4 with the binder blend had also been proposed, which was highly probable due to the chemical chelation between the exposed iron from the inner LiFePO4 and the hydroxyl group of CMC.

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Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power devices

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ECS Meeting Abstracts 2014年第40期MA2014-02卷

作者： Yoshiyuki Yonezawa Tomonori Mizushima Kensuke Takenaka Hiroyuki Fujisawa Tomohisa Kato dai Okamoto Mitsuru Sometani Tadayoshi deguchi Shinsuke Harada Yasunori Tanaka Shinichiro Matsunaga Tetsuo Hatakeyama Mitsuo Okamoto Mitsuru Yoshikawa Naoyuki Oose Mina ryo Hiroshi Kimura Masaaki Miyajima Naoki Kumagai Manabu Takei Manabu Arai Kazuto Takao Toru Izumi Toshihiko Hayashi Koji Nakayama Katsunori Asano Akihiro Otsuki Kenji Fukuda Hajime Okumura Tsunenobu Kimoto Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology AIST Corporate R&D Headquarters Fuji Electric Co. Ltd. New Japan Radio Co. Ltd. Toshiba Corporation Corporate Research & Development Center Power Engineering R&D Center Kansai Electric Power Co. Inc. Department of Electronic Science & Engineering Kyoto University

For the realization of a low-carbon-emission society and in terms of energy security, the grid connections of electric power systems are highly desired by applying a smart grid and high voltage dC transmission systems (HVdC). If switching devices with a break down voltage (BV) greater than 10kV are realized, it would be extremely beneficial for the reduction in size and loss of the power electronics components such as a loop power controller (LPC), a static synchronous compensator (STATcoM), and an intelligent solid state transformer (SST). Silicon carbide (SiC) is expected to be a next-generation power semiconductor material because its band gap is three times larger than that of Si. The breakdown electric field of SiC is 10 times higher than that of Si, allowing the thickness of the drift layer in SiC power devices to be 1/10 that of Si power devices. Thus, if an insulated-gate bipolar transistor (IGBT) structure of SiC is used, it will be possible to realize more than 10 kV MOS-controlled switching devices with very low on-resistance [1, 2]. We have been working on a SiC p-channel IGBT with a BV of 10 kV [4] as well as a PiN diode with a BV of 13 kV [5]. For these devices, a high-quality n++ substrate could be used for device fabrication. However, the crystal quality of the p++ SiC substrate for the purpose of fabricating an n-channel IGBT is currently very poor with a high micropipe density and high resistivity using it as a collector. Moreover, the channel mobility for a SiC-MOSFET is still very low compared with that of a Si-MOSFET because of its 10-times higher interface-state density (dit). To solve these problems related to n-channel SiC-IGBTs, we employed a heavily doped epitaxial p++ layer as a substrate and an implantation and epitaxial MOSFET (IEMOSFET) [5, 6] as a MOSFET structure, which is called a flip-type IE-IGBT. For the substrate, we attempted to fabricate a flip-type wafer utilizing a p++ epitaxial layer as a substrate [1]. First, a 150-mm-thick

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Microstructure and Properties of High-density Tungsten/Polymer composites

Microstructure and Properties of High-Density Tungsten/Polym...

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2013年全国粉末冶金学术会议及海峡两岸粉末冶金技术研讨会

作者： Guozhang Zhao Yang Yu Fusheng Peng Zongxing Wei Jiupeng Song Zhimin Huang Tao Shi Zhigang Zhuang Qingdong Zhong Xiamen Honglu Tungsten Molybdenum Industry Co.Ltd. Xiamen 361021P.R.China China National R&D Center for Tungsten Technology Xiamen Tungsten Co.Ltd.Xiamen 361026P.R.China School of Material Science and Engineering Shanghai UniversityShanghai 200072P.R.China

High-density lead-free X-ray radiation shielding composites based on thermoplastic elastomer and micro-sized tungsten powders were *** microstructure,mechanical properties,degradation behavior and radiation shielding properties of the composites were *** results indicated that the modified tungsten particles were uniformly dispersed in the thermoplastic elastomer (TPE) matrix and the efficient polymer-filler interfacial networks were *** density,mechanical properties and X-ray radiation shielding ability of the composites were significant influenced by the powder loading of the *** the powder loading increased up to 60 vol.％,the composites exhibited a density of 11.6 g/cm3,and the lead equivalent values of its flexible sheets with thickness of 0.25 mm,0.35 mm,0.50 mm,1.0 mm,2.0mm and 3.0 mm were 0.26 mmPb,0.36 mmPb,0.48 mmPb,1.15 mmPb,2.43 mmPb and 3.31 mmPb respectively.

关键词： X-ray radiation shielding composites tungsten thermoplastic elastomer biomaterials

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