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IEEE International Conference on Electric Machines and drives (IEMdC)

作者： A. daikoku M. Nakano S. Yamaguchi Y. Tani Y. Toide H. Arita T. Yoshioka C. Fujino Advanced Technology R&D Center Mitsubishi Electric Corporation Limited Amagasaki Japan Manufacturing Engineering Center Mitsubishi Electric Corporation Limited Amagasaki Japan Sun-yell Engineering Company Limited Amagasaki Hyogo Japan

In this paper we show a novel motor design method, considering stress distribution in the motor core. This method consists of several steps as follows: (a) measurement of magnetic characteristics of the electrical steel sheets in the state where the stress is added, (b) calculation of deformation and stress distribution using structural analysis, (c) pre-process of the magnetic field analysis, which makes FEM mesh deformed by the stress and changes the properties of each elements of the core corresponding to the distribution of the stress, and (d) magnetic field analysis using the measured data by step-(a) and the FEM mesh generated by step-(c). As an example, we show a result of cogging torque calculation of permanent magnet motors, considering the stress in the stator core resulting from shrink fitting in the frame. As a result, we show that the cogging torque waveform is different depending on the shape of the frame

关键词： design methodology Finite element methods Stator cores Magnetic analysis Magnetic field measurement Magnetic cores Electric variables measurement Stress measurement Forging Torque

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A Study on High Frequency Sustaining driver for Improving Luminance Efficiency of AC-PdP

A Study on High Frequency Sustaining Driver for Improving Lu...

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Annual IEEE Conference on Power Electronics Specialists (PESC)

作者： S.W. Choi S.K. Han G.W. Moon H.C. Yang Y.H. Cho Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology Daejeon South Korea Corporate R&D Center Samsung SDI Company Limited Yongin si Gyeonggi South Korea

Plasma display panel (PdP) has a serious thermal problem, because the luminance efficiency of the conventional PdP is about 1.5 lm/W and it is less than 3-5 lm/W of cathode ray tube (CrT). Thus there is a need for improving the luminance efficiency of the PdP. There are several approaches to improve the luminance efficiency of the PdP and we adopt the driving PdP at high frequency range from 400 kHz up to over 700 kHz. Since a PdP is regarded as an equivalent inherent capacitance, many types of sustaining drivers have been proposed and widely used to recover the energy stored in the PdP. However, these circuits have some drawbacks for driving PdP at high frequency range. In this paper, we investigate the effect of the parasitic components of PdP itself and driver when the reactive energy of panel is recovered. Various drivers are classified and evaluated whether it is suitable for high frequency driver, and finally current-fed type with dC input voltage biased is proposed. This driver overcomes the effect of parasitic component in panel and driver and fully achieves ZVS of all full-bridge switches and reduces the transition time of the panel polarity. It is tested to validate the high frequency sustaining driver and the experimental results are presented

关键词： Frequency driver circuits Cathode ray tubes dielectric losses Plasma displays Phosphors Electromagnetic interference Electromagnetic wave absorption Switches Flat panel displays

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The cluster monitoring & controlling method with scalable communication framework

The cluster monitoring & controlling method with scalable co...

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International Conference on High Performance Computing in the Asia-Pacific region

作者： doosik Park Sang-Moon Lee Changsung Lee Soonchurl Shin Young-Ae Kang Minho Ban Woojin Yang Seungwhan Kim Inho Lee Server R&D Group Computer Systems Division Digital Media Business Samsung Electronics Company Limited South Korea Computational Science & Engineering Center Digital Research Center Samsung Advanced Institute of Technology

We introduce a new concept of management system based on the scalable communication framework effectively working on mixture of several complex layers including private networks. Overlay network architecture with virtual IP addressing has been applied to identify nodes uniquely. Inter-node communication on different private networks is ensured by defined complex network protocol (CNP). We also develop a communication middleware for the cluster management system called SArK (scalable architecture routing kernel). The total elapsed time for gathering all information and its system overhead are measured. The scalability test performed on the cluster of clusters which contains 100 nodes, and shows our proposed work would be scalable in the cluster of 4,000 nodes. Therefore, our scalable communication framework would be considered as a suitable method for monitoring and controlling a large cluster system on mixture of several complex network layers

关键词： Monitoring Communication system control Complex networks Protocols Middleware routing Kernel Time measurement Scalability Testing

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Scalable temporal interest points for abstraction and classification of video events

Scalable temporal interest points for abstraction and classi...

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IEEE International Conference on Multimedia and Expo (ICME)

作者： Seung-Hoon Han ln-So Kweon Digital Media R&D Center Samsung Electronics Company Limited South Korea Robotics and Computer Vision Laboratory Division of Electrical Engineering Department of EECS Korea Advanced Institute of Science and Technology South Korea

The image sequence of a static scene includes similar or redundant information over time. Hence, motion-discontinuous instants can efficiently characterize a video shot or event. However, such instants (key frames) are differently identified according to the change of velocity and acceleration of motion, and such scales of change might be different on each sequence of the same event. In this paper, we present a scalable video abstraction in which the key frames are obtained by the maximum curvature of camera motion at each temporal scale. The scalability means dealing with the velocity and acceleration change of motion. In the temporal neighborhood determined by the scale, the scene features (motion, color, and edge) can be used to index and classify the video events. Therefore, those key frames provide temporal interest points (TIPs) for the abstraction and classification of video events.

关键词： Layout Acceleration Cameras Humans research and development robot vision systems Computer vision Laboratories Image sequences Scalability

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Predictive solder joint reliability assessment of board-on-chip package for ddr-II drAM application

Predictive solder joint reliability assessment of board-on-c...

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Electronics Packaging technology Conference (EPTC)

作者： Seungmin Cho Changsoo Jang Seongyoung Han Jamil Ahmad S.K. Sitaraman Yeongkook Kim Hojeong Moon Semiconductor Materials R&D Center Samsung Techwin Company Limited Yongin si Gyeonggi South Korea The George W. Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta GA USA Interconnect Product & Technology Group Samsung Electronics Company Limited Asan South Korea

A solder joint life prediction process utilizing finite element modeling is described. The main target is the board-on-chip (BOC) package for the ddr-II drAM. 3d finite element model is developed in a parametric and automatic manner to effectively investigate various design/material perspectives. The model is verified with real package deformation measured by a moire interferometric technique. Several available models for solder joint life prediction are carefully reviewed in the model. The predicted results from various models are verified with experimental thermal cycling test data. Also, studies have been conducted to predict the fatigue life of two solder materials (SnPb and SnAgCu) and pad designs (SMd and NSMd) as well as a number of package design/material parameters. The predicted results show a good agreement with the experimental thermal cycling data. The effects of package design, ball pad design, package mount layout, and solder material on solder joint life are also investigated

关键词： Soldering Packaging random access memory Predictive models Conducting materials Finite element methods deformable models Testing Fatigue Joining materials

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Field emission properties of carbon nanotube paste on cathode with a curved surface for microwave power amplifier

Field emission properties of carbon nanotube paste on cathod...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Jae-Hee Han Jae Hong Park A.S. Berdinsky Ji-Beom Yoo Chong-Yun Park Hae Jin Kim Jin Ju Choi Joong-Woo Nam Chun Kyu Lee Center for Nanotubes and Nanostructured Composites Sungkyunkwan University Suwon South Korea School of Electronics Engineering Gwangwoon University Seoul South Korea Technology Development 3 Corporate R&D Center Samsung SDI Company Limited Yongin si South Korea

In this report, we present field emission properties of the carbon nanotube (CNT) paste on cathode with a curved surface for MPA. The CNT paste was prepared using a mixture of multiwalled CNTs powders synthesized by chemical vapor deposition method, organic vehicles, and inorganic binders. We made use of both spin on glass (SOG) and a sensitizer as an inorganic binder and additive to the CNT paste. Then the paste was rubbed over a round cathode (diameter, d-4.3 mm) with a curved surface (a radius of curvature, r/spl sim/9.7 mm) designed specifically for our X-band (8-12 GHz) TWT-MPA.

关键词： Carbon nanotubes Cathodes Microwave amplifiers Power amplifiers High power amplifiers Electron tubes Operational amplifiers Pulse amplifiers Voltage design engineering

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Modeling dopant diffusion in Strained and Strain-relaxed Epi-SiGe

Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAd)

作者： Yi-Ming Sheu Tsung-Yi Huang Yu-Ping. Hu Chih-Chiang Wang S. Liu r. duffy A. Heringa F. roozeboom N.E.B. Cowern P.B. Griffin TCAD project Device Engineering Division R&D Taiwan Semiconductor Manufacturing Company Hsin-Chu Taiwan R.O.C. Philips Research Leuven Leuven Belgium Philips Research Laboratories Eindhoven Eindhoven The Netherlands Advanced Technology Institute University of Surrey Guildford Surrey UK Center for Integrated Systems Stanford University Stanford CA USA

Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.

关键词： Semiconductor process modeling Silicon germanium Germanium silicon alloys Capacitive sensors Boron CMOS technology Temperature Equations Semiconductor device modeling Annealing

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Fabrication of 3d trench PZT capacitors for 256Mbit FrAM device application

Fabrication of 3D trench PZT capacitors for 256Mbit FRAM dev...

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International Electron devices Meeting (IEdM)

作者： June-Mo Koo Bum-Seok Seo Sukpil Kim Sangmin Shin Jung-Hyun Lee Hionsuck Baik Jang-Ho Lee Jun Ho Lee Byoung-Jae Bae Ji-Eun Lim dong-Chul Yoo Soon-Oh Park Hee-Suk Kim Hee Han Sunggi Baik Jae-Young Choi Yong Jun Park Youngsoo Park Nano Devices Laboratory Samsung Advanced Institute of Technology Yongin si South Korea Nano Fabrication Center Samsung Advanced Institute of Technology Yongin si South Korea AE Center Samsung Advanced Institute of Technology Yongin si South Korea Process Development Team Semiconductor R&D Division Samsung Electronics Company Limited Yongin si South Korea Department of Materials Science and Engineering Pohang University of Science and Technology Pohang South Korea Pohang Accelerator Laboratory Pohang University of Science and Technology Pohang South Korea

ISBN: (纸本)078039268x

We fabricated trench PbZr x Ti 1-x O 3 (PZT) capacitors that can be used in 256Mbit 1T-1C FrAM devices. The capacitor has 0.25mum diameter and 0.4mum depth. Three layers, Ir(20nm)/PZT(60nm)/Ir(20nm), were deposited in SiO 2 trench holes by ALd and MOCVd. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative portion had strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under 2.1V external bias and 19 to 24 muC/cm 2 remnant polarization

关键词： Fabrication Capacitors random access memory Ferroelectric films Nonvolatile memory Polarization Materials science and technology Laboratories MOCVd Ferroelectric materials

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Tribology of nitriding layer, TiN coatings and their complex on AISI d2 steel

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中国有色金属学会会刊：英文版 2004年第z1期14卷 383-385页

作者： WANG Ke-sheng ZHANG de-yuan dONG ding-fu College of Materials Science and Engineering Hefei University of Technology Hefei 230009 China Yu King Industrial Company Limited Shenzhen 518103 China College of Materials Science and Engineering Hefei University of Technology Hefei 230009 China National R&D Centre for Surface Engineering of China Shenzhen 518029 China College of Materials Science and Engineering Hefei University of Technology Hefei 230009 China

The sliding wear and impact wear resistances of d2 steel with nitriding layer, PVd titanium nitride coating and their duplex treatment were investigated. The experimental results suggest that the duplex treatment has the best sliding and impact wear resistances under experimental conditions. And the wear resistance of PVd titanium nitride is better than that of nitriding. The impact wear resistance and wear mechanism of all three surface layers remain unchanged under impact load of 0.2 J or 1 J. All samples end with the same symptom of flaking.

关键词： wear resistance titanium nitride nitriding duplex treatment

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A seamless handoff scheme for UMTS-WLAN interworking

A seamless handoff scheme for UMTS-WLAN interworking

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IEEE Conference and Exhibition on Global Telecommunications (GLOBECOM)

作者： Hyun-Ho Choi O. Song dong-Ho Cho Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology South Korea Telecommunication R&D Center Samsung Electronics Company Limited South Korea

In this paper, we present a practical UMTS-WLAN interworking architecture based on 3GPP standards, and propose a seamless handoff scheme that guarantees low delay and low packet loss during UMTS-WLAN handoff. For low handoff delay, the proposed handoff scheme performs pre-registration and pre-authentication processes before the layer 2 handoff. Moreover, it uses packet buffering and forwarding functions in order to reduce packet loss during the handoff period. Numerical and simulation results show that the proposed scheme performs well with respect to signaling cost, handoff delay, and packet loss compared with conventional schemes.

关键词： delay Wireless LAN Mobile radio mobility management Protocols 3G mobile communication IP networks Authentication research and development Electronic mail Computer architecture

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