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Analysis of dispersion of pulse signals in underground tunnels using finite-difference time domain and short-time Fourier transform

Analysis of dispersion of pulse signals in underground tunne...

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Proceedings of the International Conference on Ground Penetrating radar, GPr

作者： Sang-Wook Kim Se-Yun Kim R&D Division Isung Engineering Company Limited Siheung Kyunggi South Korea Imaging Media Research Center Korea Institute of Science and Technology Seoul South Korea

ISBN: (纸本)9781424446049;9781424446056

The dispersion of pulse signals of a cross borehole radar simulator for tunnel detection was analyzed using FdTd and STFT. Two simulation cases with extremely different dispersion properties were simulated by the FdTd method. In the two cases, the trace path between the transmitter and receiver penetrated an air-filled tunnel perpendicularly and obliquely, respectively. The recorded fields in the cross sectional plane during FdTd computation were decomposed into several frequency components by STFT. By analyzing the propagation behaviors of frequency components, the different dispersion characteristics according to the tunnel's oblique angle variation are visually rendered in detail.

关键词： Signal analysis Finite difference methods Time domain analysis Fourier transforms Frequency radar detection Continuous wavelet transforms Optical fiber dispersion Computational modeling Wavelet transforms

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Characterization of Gate-All-Around Si-NWFET, including rsd, cylindrical coordinate based 1/f noise and hot carrier effects

Characterization of Gate-All-Around Si-NWFET, including Rsd,...

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Annual International Symposium on reliability Physics

作者： rock-Hyun Baek Hyun-Sik Choi Hyun Chul Sagong Sang-Hyun Lee Gil-Bok Choi Seung Hyun Song Chan-Hoon Park Jeong-Soo Lee Yoon-Ha Jeong Chang-Ki Baek dae Mann Kim Yun Young Yeoh Kyoung Hwan Yeo dong-Won Kim Kinam Kim Department of Electronic and Electrical Engineering Pohang University of Science and Technology South Korea School of Computational Sciences Korea Institute of Advanced Study Seoul South Korea Semiconductor R&D Center Samsung Electronics Company Limited Yongin si Gyeonggi South Korea

ISBN: (纸本)9781424454303;9781424454310

In this paper, we introduce the cylindrical coordinate based flicker noise model for Silicon NanoWire Field Effect Transistor (Si-NWFET) with Gate-All-Around (GAA) structure. For the accurate extraction of the volume trap density, N t , with 1/f noise modeling, the parameters which represent the intrinsic channel properties are determined by rejecting the series resistance r sd effect. due to the random distribution of traps in Si-NWFETs, the 1/f noise data are obtained by averaging the drain current power spectral density, S id , for several devices. By using the proposed 1/f model, the extracted volume trap density is compared for three different oxide processes (ISSG/rTO/GNOx) and verified by hot carrier stress test.

关键词： Semiconductor device noise 1f noise Silicon data mining Hot carriers Stress Fluctuations Current measurement Electrical resistance measurement Noise figure

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Ultra-thin-body PECVd Ge TFT low-voltage flash memory cell with high-k dielectrics for three-dimensional integration

Ultra-thin-body PECVD Ge TFT low-voltage flash memory cell w...

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device research Conference

作者： Jaegoo Lee Judy J. Cha Taro Naoi david A. Muller r.B. van dover Jonathan T. Shaw Edwin C. Kan Flash Core Technology Laboratory Semiconductor R&D Center Samsung Electronics Company Limited Gyeonggi South Korea School of Electrical and Computer Engineering Cornell University Ithaca NY USA School of Applied and Engineering Physics Cornell University Ithaca NY USA Department of Material Science and Engineering Cornell University Ithaca NY USA

In this study, we demonstrate the material and electrical characteristics of stackable Ge TFT flash memory cell with Al 2 O 3 high-k tunnel dielectric, metal NCs and (Ti,dy) x O y control dielectric. Our proposed pl... 详细信息

ISBN: (纸本)9781424465620

关键词： Logic gates Thin film transistors Annealing Gold Chromium Flash memory cells

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A Practical Approach to Tuning of SMES Controller based on Synchronized Phasor Measurements for Interconnected Power System with Wind Farms

A Practical Approach to Tuning of SMES Controller based on S...

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IEEE International Conference on Sustainable Energy Technologies, ICSET

作者： S. dechanupaprittha C. Li M. Watanabe Y. Mitani K. Hongesombut I. Ngamroo Department of Electrical Engineering Kyushu Institute of Technology Fukuoka Japan R&D Center Tokyo Electric Power Company Limited Yokohama Japan Department of Electrical Engineering King Mongkut''s Institute of Technology Ladkrabang Bangkok Thailand

The high penetration of hardly predictable wind power with abrupt changes adversely affects many aspects of power system operations and control, in particular power system stability. To achieve the controller design in practice, this paper presents an approach to tuning of SMES controller based on synchronized phasor measurements for interconnected power system with wind farms. The designed controller is aimed at improving the system damping performance, meanwhile enhancing the stability of a power system. With PMUs, the most recent data of power system can be obtained for controller design. The extended simplified oscillation model is determined for detection and assessment of an approximated inter-area oscillation mode including SMES controller effects. The parameters of SMES controller are systematically tuned with less effort by tabu search towards the design specification. Finally, some simulation studies are carried out to demonstrate and confirm the applicability and effectiveness of the presented approach.

关键词： Power system interconnection Samarium Control systems Power measurement Power system measurements Wind farms Power system stability Power system modeling Tuning Power system control

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Automatic digest Generation by Extracting Important Scenes from the Content of Presentations

Automatic Digest Generation by Extracting Important Scenes f...

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International Workshop on database and Expert Systems Applications

作者： Hieu Hanh Le Thitiporn Lertrusdachakul Tetsutaro Watanabe Haruo Yokota Department of Computer Science Tokyo Institute of Technology Japan Department of Computer Science Graduate School of Information and Engineering Tokyo Institute of Technology Japan Application Lab Ricoh Company Ltd Application Laboratory Software R&D Group Ricoh Company Limited Japan Department of Computer Science Tokyo Institute of Technology Global Scientific Information and Computing Center Tokyo Institute of Technology

recently, combining a video recording of a presentation along with the digital slides used in it has become popular in e-learning and presentation of archives. For users of the archives, it is useful to preview a digest of such content to grasp the atmosphere and/or an outline of the presentation. This paper proposes a method of automatic digest generation by extracting important scenes from the presentation content. The extracted scenes are chosen based on several factors such as frequency and specificity of words, scene duration and order. Finally, the effectiveness of the proposed methods are evaluated by comparing with testers' answer sets for actual lectures.

关键词： data mining Speech Proposals Electronic learning Arrays Video recording Software

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Computer aided structural design of future MLCCs for high capacitance applications

Computer aided structural design of future MLCCs for high ca...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： T. Tsurumi Y. Mizuno H. Kishi H. Chazono Graduate School of Science and Engineering Tokyo Institute of Technology Meguro Tokyo Japan R&D Laboratories Taiyo Yuden Company Limited Haruna Gunma Japan

We have tried to see the limit of capacitance density of MLCCs using a computer simulation technique. dielectric properties of MLCCs with different particle size of BaTiO 3 were measured and the data were analyzed using B-SPLINE fitting to predict dielectric permittivity at arbitral temperature and AC-fields. The dielectric properties of barium titanate grains smaller then 100 nm were predicted using least squares fitting of the B-SPLINE coefficients. It was found from the simulation that the usage of barium titanate grains smaller than 80 nm did not give an advantage to increase the capacitance density as well as temperature stability of the MLCCs. The maximum capacitance was predicted for the 1608 (mm) chip size.

关键词： Capacitance Application software Spline Temperature Barium Titanium compounds Computer simulation dielectric measurements Permittivity measurement Particle measurements

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Miniaturization and Optimization of rF SAW Filter Using Wafer Level Packaging technology

Miniaturization and Optimization of RF SAW Filter Using Wafe...

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Electronic Components and technology Conference (ECTC)

作者： Tae Hoon Kim Won Kyu Jeung Si Joong Yang Seog Moon Choi Seung Wook Park Hyun Ho Kim Job Ha Mi Jin Park S. Kao J.P. Hong Sung Yi Jun Sik Hwang Ji Hyuk Lim Woon Bae Kim PKG Technology Team Manufacture Engineering R&D Institute Samsung Electro Mechanics Company Limited Suwon Gyeonggi South Korea Packaging Project Team Samsung Advanced Institute of Technology Yongin si Gyeonggi South Korea

In this paper, we describes the wafer level surface acoustic wave (SAW) filter package, 1.0times0.8 mm 2 , which is applicable for radio frequency (rF) stage in mobile phones. The SAW filter is reduced in size and thickness by using a 4" wafer level package process technique. The technique uses interconnection via and LiTaO 3 (LT)-LiTaO 3 (LT) wafer bonding structure. The interconnection via is formed through LT wafer by using sand blasting or laser drilling method. The AuSn eutectic bonding enables the connection of the signal pad on the SAW chip, with gold metallized LT wafer package. This eutectic bonding ensures that the SAW chip is protected mechanically and connected electrically, with the package. In order to simulate and optimize the structure and characteristics of wafer level SAW filter package, we used HFSS and AdS software. Frequency responses of measurement and simulation are compared with wafer level SAW filter package. The results of reliability tests for wafer level SAW filter package will be discussed.

关键词： radio frequency SAW filters Wafer scale integration Packaging Surface acoustic waves Wafer bonding Acoustic waves Mobile handsets drilling Gold

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Sintering Condition of Cordierite for Microwave/Millimeterwave dielectrics

Sintering Condition of Cordierite for Microwave/Millimeterwa...

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Hitoshi Ohsato Mio Terada Isao Kagomiya Keizou Kawamura Ken-ichi Kakimoto Materials Science and Engineering Shikumi-College Nagoya Institute of Technology Nagoya Japan Materials Science and Engineering Nagoya Institute of Technology Shikumi College Nagoya Japan Materials Research & Development Division General R&D Laboratories Taiyo Yuden Company Limited Gunma Japan

With advent of ubiquitous age, the high quality dielectric materials have been required for the wireless communications available to the millimeterwave as well as microwave frequencies. These high frequencies would be expected for ultra high speed LAN, ETS and car anti-collision system on the intelligent transport system (ITS) and so on. Silicates are good candidate for microwave/millimeterwave dielectrics, because of their low dielectric constant. Cordierite (Mg 2 Al 4 Si 5 O 18 ) is one of the silicates with low dielectric constant (epsiv r ), which are expected for good candidate of millimeterwave dielectrics. This study has been focused on the sintering condition of cordierite: the lowest calcined temperature of 1355degC among 1355 to 1375degC brings a single phase, the highest sintering temperature of 1440degC among 1375 to 1440degC brings a single phase. At 1440degC, the highest density of 2.48 g/cm 3 was obtained. dielectric constant was depended on the sintering temperatures, and the density was also was improved by the cooling rate from sintering temperature. The microwave dielectric properties are as follows: epsiv r = 6.14, Qldrf= 59682 GHz and tau r = -26.1 ppm/degC.

关键词： dielectric constant Frequency Temperature dependence Powders Materials science and technology dielectric materials Wireless communication Cooling dielectric losses delay effects

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GaN HEMT Based doherty Amplifier for 3.5-GHz WiMAX Applications

GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applicati...

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European Conference on Wireless technology

作者： Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim Department of Electrical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea Telecommunication Research & Development Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Telecommunication R&D Center Samsung Electronics Co. LTD Suwon Gyeonggi Republic of Korea

We have implemented a doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the doherty amplifier. The implemented doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured relative Constellation Error (rCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.

关键词： Gallium nitride HEMTs WiMAX Power amplifiers Microwave amplifiers Linearity Power generation Power measurement Microwave devices MOdFETs

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Fabrication of a direct-type silicon pixel detector for a large area hybrid x-ray imaging device

Fabrication of a direct-type silicon pixel detector for a la...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Kun-Sik Park Tae-Woo Kim Yong-Sun Yoon Jong-Moon Park Jin-Yeong Kang Jin-Gun Koo Bo-Woo Kim J. Kosonen Kwang-Soo No Electronics and Telecommunications Research Institute Semiconductor Process Team Daejeon South Korea Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea X-ray Sensor R&D Center Value Added Technologies Company Limited Hwaseong South Korea

We demonstrated the design and the fabrication processes of a direct-type silicon pixel detector for a digital dental radiography made using a high-resistive n-type silicon substrate. The structure of the detector is based on a fully-depleted p-i-n diode. The detector is composed of 644,328 pixels with a pitch of 35 mum. The size of the detector is 2.58 cm x 3.47 cm and it is composed of a 4-block assembly with four read-out CMOS ICs. We focused on experimentally evaluating the process conditions for the silicon pixel detector to reduce the leakage current and improve the breakdown voltage. From the experimental results, we found that the high temperature drive-in after p + ion implantation deteriorates the leakage current and p + passivation by thermal oxidation improves the breakdown voltage. The leakage current of a pixel was 0.07 pA/pixel and the breakdown voltage was more than 1700 V. The read-out IC consists of a current-integrating pixel readout CMOS chip and PbSn bumps. After bump-bonding four read-out ICs to a pixel detector and wire-bonding to a PCB, X-ray image tests showed a resolution of 11 lp/mm and provided a good image of human teeth.

关键词： Fabrication Silicon Pixel X-ray detection X-ray detectors X-ray imaging Leakage current dentistry radiography P-i-n diodes

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