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arXiv 2020年

作者： Gadelha, Andreij C. Ohlberg, Douglas A.A. Rabelo, Cassiano Neto, Eliel G.S. Vasconcelos, Thiago L. Campos, João L. Lemos, Jessica S. Ornelas, Vinícius Miranda, Daniel Nadas, Rafael Santana, Fabiano C. Watanabe, Kenji Taniguchi, Takashi van Troeye, Benoit Lamparski, Michael Meunier, Vincent Nguyen, Viet-Hung Paszko, Dawid Charlier, Jean-Christophe Campos, Leonardo C. Cançado, Luiz G. Medeiros-Ribeiro, Gilberto Jorio, Ado Physics Department Electrical Engineering Graduate Program Computer Science Department Universidade Federal de Minas Gerais Belo HorizonteMG31270-901 Brazil Physics Institute Universidade Federal da Bahia Campus Universitário de Ondina Salvador - BA40170-115 Brazil Divisão de Metrologia de Materiais Inmetro Duque de Caxias RJ25250-020 Brazil 1-2-1 Sengen Tsukuba-cityIbaraki305-0047 Japan Physics Applied Physics and Astronomy Jonsson Rowland Science Center Room 1C25 110 8th Street TroyNY12180 United States Louvain-la-Neuve Belgium

A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of *** Codes 82D03 Copyright © 2020, The Authors. All rights reserved.

关键词： Electronic structure

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Topological Surface State Evolution in Bi2Se3 via Surface Etching

arXiv

引用

arXiv 2024年

作者： Yue, Ziqin Huang, Jianwei Wang, Ruohan Li, Jia-Wan Rong, Hongtao Guo, Yucheng Wu, Han Zhang, Yichen Kono, Junichiro Zhou, Xingjiang Hou, Yusheng Wu, Ruqian Yi, Ming Department of Physics and Astronomy Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and Technology School of Physics Sun Yat-Sen University Guangzhou510275 China Institute of Physics Chinese Academy of Sciences Beijing100190 China Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States Department of Physics and Astronomy University of California Irvine IrvineCA92697 United States

Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi2Se3 is a prototypical topological insulator with a Dirac-cone surface state around Γ. Here, we present a controlled methodology to gradually remove Se atoms from the surface Se-Bi-Se-Bi-Se quintuple layers, eventually forming bilayer-Bi on top of the quintuple bulk. Our method allows us to track the topological surface state and confirm its robustness throughout the surface modification. Importantly, we report a relocation of the topological Dirac cone in both real space and momentum space, as the top surface layer transitions from quintuple Se-Bi-Se-Bi-Se to bilayer-Bi. Additionally, charge transfer among different surface layers is identified. Our study provides a precise method to manipulate surface configurations, allowing for the fine-tuning of the topological surface states in Bi2Se3, which represents a significant advancement towards nano-engineering of topological states. Copyright © 2024, The Authors. All rights reserved.

关键词： Topological insulators

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Non-linear optics at twist interfaces in h-BN/SiC heterostructures

arXiv

引用

arXiv 2023年

作者： Biswas, Abhijit Xu, Rui Alvarez, Gustavo A. Zhang, Jin Christiansen-Salameh, Joyce Puthirath, Anand B. Burns, Kory Hachtel, Jordan A. Li, Tao Iyengar, Sathvik Ajay Gray, Tia Li, Chenxi Zhang, Xiang Kannan, Harikishan Elkins, Jacob Pieshkov, Tymofii S. Vajtai, Robert Birdwell, A. Glen Neupane, Mahesh R. Garratt, Elias J. Ivanov, Tony Pate, Bradford B. Zhao, Yuji Zhu, Hanyu Tian, Zhiting Rubio, Angel Ajayan, Pulickel M. Department of Materials Science and Nanoengineering Rice University HoustonTX77005 United States Sibley School of Mechanical and Aerospace Engineering Cornell University IthacaNY14853 United States Max Planck Institute for the Structure and Dynamics of Matter Center for Free-Electron Laser Science Luruper Chaussee 149 22761 Germany Department of Materials Science & Engineering University of Virginia CharlottesvilleVA22904 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37831 United States Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States DEVCOM Army Research Laboratory RF Devices and Circuits AdelphiMD20783 United States Chemistry Division Naval Research Laboratory WashingtonDC20375 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Flatiron Institute New YorkNY10010 United States

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawidebandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong nonlinear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology. © 2023, CC BY.

关键词： Harmonic generation

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Human brain mapping with multi-thousand channel PtNRGrids resolves novel spatiotemporal dynamics

arXiv

引用

arXiv 2021年

作者： Tchoe, Youngbin Bourhis, Andrew M. Cleary, Daniel R. Stedelin, Brittany Lee, Jihwan Tonsfeldt, Karen J. Brown, Erik C. Siler, Dominic Paulk, Angelique C. Yang, Jimmy C. Oh, Hongseok Ro, Yun Goo Choi, Woojin Lee, Keundong Russman, Samantha Ganji, Mehran Galton, Ian Ben-Haim, Sharona Raslan, Ahmed M. Dayeh, Shadi A. Integrated Electronics and Biointerfaces Laboratory Department of Electrical and Computer Engineering University of California San Diego San DiegoCA92093 United States Department of Neurological Surgery University of California San Diego San DiegoCA92093 United States Department of Neurological Surgery Oregon Health & Science University Mail Code CH8N 3303 SW Bond Avenue PortlandOR97239-3098 United States Department of Obstetrics Gynecology and Reproductive Sciences Center for Reproductive Science and Medicine University of California San Diego San DiegoCA92093 United States Department of Neurology Massachusetts General Hospital BostonMA02114 United States Department of Neurosurgery Massachusetts General Hospital BostonMA02114 United States Graduate Program of Materials Science and Engineering University of California San Diego San DiegoCA92093 United States

Electrophysiological devices are critical for mapping eloquent and diseased brain regions and for therapeutic neuromodulation in clinical settings and are extensively utilized for research in brain-machine interfaces. However, the existing devices are often limited in either spatial resolution or cortical coverage, even including those with thousands of channels used in animal experiments. Here, we developed scalable manufacturing processes and dense connectorization to achieve reconfigurable thin-film, multi-thousand channel neurophysiological recording grids using platinum-nanorods (PtNRGrids). With PtNRGrids, we have achieved a multi-thousand channel array of small (30 μm) contacts with low impedance, providing unparalleled spatial and temporal resolution over a large cortical area. We demonstrate that PtNRGrids can resolve sub-millimeter functional organization of the barrel cortex in anesthetized rats that captured the histochemically-demonstrated structure. In the clinical setting, PtNRGrids resolved fine, complex temporal dynamics from the cortical surface in an awake human patient performing grasping tasks. Additionally, the PtNRGrids identified the spatial spread and dynamics of epileptic discharges in a patient undergoing epilepsy surgery at 1 mm spatial resolution, including activity induced by direct electrical stimulation. Collectively, these findings demonstrate the power of the PtNRGrids to transform clinical mapping and research with brain-machine interfaces and highlights a path toward novel therapeutics. Copyright © 2021, The Authors. All rights reserved.

关键词： Mapping

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Two-dimensional pentagonal material Penta-PdPSe: A first-principle study

arXiv

引用

arXiv 2021年

作者： Bafekry, Asadolah Fadlallah, M.M. Faraji, M. Shafique, A. Jappor, H.R. Abdolhoseini Sarsari, I. Ang, Yee Sin Ghergherehchi, M. Department of Radiation Application Shahid Beheshti University Tehran*** Iran Department of Physics Faculty of Science Benha University Benha13518 Egypt Micro and Nanotechnology Graduate Program TOBB University of Economics and Technology Sogutozu Caddesi No 43 Sogutozu Ankara06560 Turkey Department of Physics Lahore University of Management Sciences Lahore Pakistan Department of Physics College of Education for Pure Sciences University of Babylon Hilla Iraq Department of Physics Isfahan University of Technology Isfahan84156-83111 Iran Cluster Singapore University of Technology and Design Singapore487372 Singapore Department of Electrical and Computer Engineering Sungkyunkwan University Suwon16419 Korea Republic of

Low-symmetry Penta-PdPSe with intrinsic in-plane anisotropy synthesized successfully [P. Li et al., Adv. Mater., 2102541 (2021)]. Motivated by this experimental discovery, we investigate the structural, mechanical, electronic, optical and thermoelectric properties of PdPSe monolayer via density functional theory calculations. The phonon dispersion, molecular dynamics simulation, the cohesive energy mechanical properties of the penta-PdPSe monolayer is verified to confirm its stability. The phonon spectrum represents a striking gap between the high-frequency and the low-frequency optical branches and an out-of-plane flexure mode with a quadratic dispersion in the long-wavelength limit. The Poisson’s ratio indicates that penta-PdPSe is a brittle monolayer. The pendaPdPSe monolayer is an indirect semiconductor with bandgap of 1.40 (2.07) eV using PBE (HSE06) functional. Optical properties simulation suggests that PdPSe is capable of absorbing a substantial range of visible to ultraviolet light. Band alignment analysis also reveals the compatibility of PdPSe for water splitting photocatalysis application. By combining the electrical and thermal transport properties of PdPSe, we show that a high PF is achievable at room temperature, thus making PdPSe a candidate material for thermoelectric application. Our findings reveal the strong potential of penta-PdPSe monolayer for a wide array of applications, including optoelectronic, water splitting and thermoelectric device applications. © 2021, CC BY.

关键词： Monolayers

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AIR-CUSHION LANDING CRAFT NAVIGATION

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NAVAL ENGINEERS JOURNAL 1985年第4期97卷 248-260页

作者： GRAHAM, HR KIM, JC BAND, EGU FOWLER, AW Herbert R. Graham:received his degrees of B.S. in 1951 and M.S. in 1958 in aeronautical engineering from the Massachusetts Institute of Technology and the California Institute of Technology respectively. He also attended the Harvard Graduate School of Business Administration. He is presently a task manager at TRW Inc. McLean Virginia responsible for landing craft air cushion (LCAC) engineering support. Since joining TRW in 1967 he has had several technical project management and system engineering responsibilities in amphibious ships transportation and energy. He was responsible for the preliminary engineering design and cost estimates for tracked air cushion vehicles (TACVs). He has been active in several professional societies including ASNE and served as vice-chairman Los Angeles Section American Institute of Aeronautics and Astronautics. John C. Kim:received his degrees of B.S. in electrical engineering Tri-State University 1959 M.S. in electrical engineering Michigan State University 1960 and Ph.D. in electrical engineering Michigan State University. He is presently a senior staff engineer with TRW Inc. McLean Virginia where his technical experience has included communications system engineering and navigation system analysis. Since joining TRW in 1969 he has held numerous positions including section head project manager and department manager. His previous employment includes E-Systems/Melpar Division and Honeywell. Dr. Kim has been active in the IEEE Washington Chapter activities which included secretary vice-chairman and chairman of Systems Science and Cybernetics Group. Edward G.U. Band:received a B.S. degree in mechnical engineering in 1946 and a D.I.C in aeronautical engineering in 1947 at the City and Guilds College of London University. In 1951 he received an M.S. degree from Stevens Institute of Technology in fluid dynamics. After a career in the aircraft industry in England Canada and the U.S.A. he spent several years teaching in Chile and at Webb Institute of Naval Archi

Air cushion vehicles (ACVs) have operated successfully on commercial routes for about twenty years. The routes are normally quite short; the craft are equipped with radar and radio navigation aids and maintain continuous contact with their terminals. Navigation of these craft, therefore, does not present any unusual difficulty. The introduction of air cushion vehicles into military service, however, can present a very different picture, especially when external navigation aids are not available and the craft must navigate by dead reckoning. This paper considers the problems involved when navigating a high-speed air cushion vehicle by dead reckoning in conditions of poor visibility. A method is presented to assess the ACV's navigational capability under these circumstances. A figure of merit is used to determine the sensitivity of factors which affect navigation such as the range of visibility, point-to-point distance, speed, turning radius and accuracy of onboard equipment. The method provides simplistic but adequate answers and can be used effectively to compare the-capability and cost of alternative navigation concepts.

关键词： AIR CUSHION VEHICLES

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Ambient-pressure CVD of graphene on low-index Ni surfaces using methane: A combined experimental and first-principles study

引用

Physical Review Materials 2018年第7期2卷 073404-073404页

作者： Daniela L. Mafra Jimena A. Olmos-Asar Fabio R. Negreiros Alfonso Reina Ki Kang Kim Mildred S. Dresselhaus Jing Kong Gary J. Mankey Paulo T. Araujo Department of Electrical Engineering and Computer Sciences Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Centro de Ciências Naturais e Humanas Universidade Federal do ABC Santo André 09210-580 SP Brazil INFIQC CONICET Departamento de Química Teórcia y Computacional Facultad de Ciencias Químicas Universidad Nacional de Córdoba X5000HUA Argentina Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Energy and Materials Engineering Dongguk University-Seoul Seoul 04620 Republic of Korea Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics and Astronomy The University of Alabama Tuscaloosa Alabama 35487 USA Center for Materials for Information Technology (MINT Center) The University of Alabama Tuscaloosa Alabama 35401 USA Natural Sciences Institute Graduate Program in Physics - Federal University of Para Belem PA 66075-110 Brazil

The growth of large area single-layer graphene (1-LG) is studied using ambient pressure chemical vapor deposition on single-crystal Ni(111), Ni(110), and Ni(100). By varying both the furnace temperature in the range of 800–1100 °C and the gas flow through the growth chamber, uniform, high-quality 1-LG is obtained for Ni(111) and Ni(110) single crystals and for Ni(100) thin films. Surprisingly, only multilayer graphene growth could be obtained for single-crystal Ni(100). The experimental results are analyzed to determine the optimum combination of temperature and gas flow. Characterization with optical microscopy, Raman spectroscopy, and optical transmission support our findings. Density-functional theory calculations are performed to determine the energy barriers for diffusion, segregation, and adsorption, and model the kinetic pathways for formation of different carbon structures on the low-index surfaces of Ni.

关键词： Growth Synthesis 2-dimensional systems Carbon-based materials Atomic force microscopy Chemical vapor deposition Density functional calculations Density functional theory Raman spectroscopy

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Polarization entanglement enabled by orthogonally stacked van der Waals NbOCl2 crystals

arXiv

引用

arXiv 2024年

作者： Guo, Qiangbing Wu, Yun-Kun Zhang, Di Zhang, Qiuhong Guo, Guang-Can Alù, Andrea Ren, Xi-Feng Qiu, Cheng-Wei Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore Centre for Advanced 2D Materials Graphene Research Centre National University of Singapore Singapore Singapore CAS Key Laboratory of Quantum Information CAS Synergetic Innovation Center of Quantum Information & Quantum Physics University of Science and Technology of China Hefei China Hefei National Laboratory University of Science and Technology of China Hefei China Photonics Initiative Advanced Science Research Center City University of New York New York United States Physics Program Graduate Center City University of New York New York United States The Key Laboratory of Weak-Light Nonlinear Photonics Ministry of Education School of Physics TEDA Applied Physics Institute Nankai University Tianjin China School of Chemistry and Materials Science Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou China

Polarization entanglement holds significant importance for photonic quantum technologies. Recently emerging subwavelength nonlinear quantum light sources, e.g., GaP and LiNbO3 thin films, benefiting from the relaxed phase-matching constraints and volume confinement, has shown intriguing properties, such as high-dimensional hyperentanglement and robust entanglement anti-degradation. Van der Waals (vdW) NbOCl2 crystal, renowned for its superior optical nonlinearities, has emerged as one of ideal candidates for ultrathin quantum light sources [Nature 613, 53 (2023)]. However, polarization-entanglement is inaccessible in NbOCl2 crystal due to its unfavorable nonlinear susceptibility tensor. Here, by leveraging the twist-stacking degree of freedom inherently in vdW systems, we showcase the preparation of tunable polarization entanglement and quantum Bell states. Our work not only provides a new and tunable polarization-entangled vdW photon-pair source, but also introduces a new knob in engineering the entanglement state of quantum light at the nanoscale. © 2024, CC BY-NC-ND.

关键词： Van der Waals forces

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Corrigendum to "Target-specific near-IR induced drug release and photothermal therapy with accumulated Au/Ag hollow nanoshells on pulmonary cancer cell membranes" [Biomaterials 45 (2015) 81-92]

引用

Biomaterials 2015年 65卷 124-125页

作者： Mi Suk Noh Somin Lee Homan Kang Jin-Kyoung Yang Hyunmi Lee Doyk Hwang Jong Woo Lee Sinyoung Jeong Yoonjeong Jang Bong-Hyun Jun Dae Hong Jeong Seong Keun Kim Yoon-Sik Lee Myung-Haing Cho Laboratory of Toxicology College of Veterinary Medicine Seoul National University Seoul 151-742 Republic of Korea Program in Nano Science and Technology Graduate School of Convergence Science and Technology Seoul National University Seoul 151-742 Republic of Korea Medical Supplies Evaluation Center Korea Testing Certification Gunpo 435-862 Republic of Korea. Graduate Group of Tumor Biology Seoul National University Seoul 151-742 Republic of Korea. Interdisciplinary Program in Nano-Science and Technology Seoul National University Seoul 151-742 Republic of Korea School of Electrical Engineering and Computer Science Seoul National University Seoul 151-742 Republic of Korea. School of Chemical and Biological Engineering Seoul National University Seoul 151-742 Republic of Korea. Department of Biophysics and Chemical Biology and Department of Chemistry Seoul National University Seoul 151-742 Republic of Korea. Department of Chemistry Education Seoul National University Seoul 151-742 Republic of Korea. Laboratory of Toxicology College of Veterinary Medicine Seoul National University Seoul 151-742 Republic of Korea. Department of Bioscience and Biotechnology Konkuk University Seoul 143-701 Republic of Korea. Department of Chemistry Education Seoul National University Seoul 151-742 Republic of Korea. School of Chemical and Biological Engineering Seoul National University Seoul 151-742 Republic of Korea. Electronic address: yslee@snu.ac.kr. Graduate Group of Tumor Biology Seoul National University Seoul 151-742 Republic of Korea Advanced Institute of Convergence Technology Seoul National University Suwon 443-270 Republic of Korea. Electronic address: mchotox@snu.ac.kr.

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Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography

arXiv

引用

arXiv 2023年

作者： Borra, Mona Zolfaghari Radfar, Behrad Nasser, Hisham Çolakoğlu, Tahir Tokel, Onur Turnalı, Ahmet Demirtaş, Merve Ustunel, Hande Toffoli, Daniele Ömer İlday, F. Turan, Raşit Pavlov, Ihor Bek, Alpan ODTÜ-GÜNAM Middle East Technical University Ankara06800 Turkey Ankara06800 Turkey Department of Electronics and Nanoengineering Aalto University Tietotie 3 EspooFI-02150 Finland Department of Physics Engineering Ankara University Ankara06100 Turkey Department of Physics Bilkent University Ankara06800 Turkey UNAM National Nanotechnology Research Center Institute of Materials Science and Nanotechnology Bilkent University Ankara06800 Turkey Department of Electrical and Electronics Engineering Bilkent University Ankara06800 Turkey Department of Electrical and Computer Engineering Boston University 8 Saint Mary’s Street BostonMA02215 United States Ankara06800 Turkey Network Technologies Department TUBITAK ULAKBIM Ankara06800 Turkey Department of Chemical and Pharmaceutical Sciences Trieste University Trieste Italy IOM-CNR Istituto Officina dei Materiali Trieste34149 Italy Micro and Nanotechnology Graduate Program of Natural and Applied Sciences Middle East Technical Turkey

Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces. Copyright © 2023, The Authors. All rights reserved.

关键词： Morphology

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