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IEEE Region 10 International Conference TENCON

作者： Avra Kundu Bhaskar Gupta Hiranmay Saha Binay K. Sarkar Samir K. Lahiri IC Design and Fabrication Center Department of Electronics and Telecommunication Engineering Jadavpur University Kolkata West Bengal India Centre of Excellence for Green Energy and Sensor Systems Bengal Engineering and Science University Howrah West Bengal India Electronics & EC Engineering Indian Institute of Technology Kharagpur Kharagpur West Bengal India Advanced Technology Development Center Sponsored Research and Industrial Consultancy Indian Institute of Technology Kharagpur Kharagpur West Bengal India

Distributed MEMS transmission line (DMTL) phase shifter on low resistivity silicon for Ku band is presented. The loss relating to the conductivity of silicon and carriers at the silicon-oxide interface is solved by completely removing the silicon as well as the oxide from underneath the CPW t-line. The only silicon left is to provide anchorage to movable sections of the CPW. This also results in a two movable plate system which simultaneously improves the actuation voltage and the switching speed. A phase shifter based on the two movable plate system is designed and a phase shift of 180° is obtained at Ku band with an insertion loss of 1.16dB for low resistivity silicon (10-20 Ωcm). A fabrication technique is proposed and initial fabrication results of the design are presented.

关键词： Silicon Substrates Coplanar waveguides Biomembranes Conductivity Micromechanical devices Phase shifters

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Optimum Design of Quenching Capacitor Integrated Silicon Photomultipliers for TOF-PET Application

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Physics Procedia 2012年 37卷 1511-1517页

作者： Gyuseong Cho Hyoungtaek Kim Woo Suk Sul Chaehun Lee Bo-Sun Kang Radiation Detection And Medical Image Sensor Laboratory Department of Nuclear and Quantum Engineering KAIST Daejeon 305-701 Republic of Korea National Nanofab Center Daejeon 305-806 Republic of Korea Samsung Advanced Institute of Technology Gyeonggi Do 446-712 Republic of Korea Department of Radiological Science College of Medical Science Konyang University Daejeon 302-718 Republic of Korea

The prototype SiPM was designed and fabricated for MRI compatible PET using the customized CMOS process at National Nanofab center in KAIST. The SiPM was designed to have a size of 3x3 mm2 composed of micro-cells of 65x65 μm 2 with a fill factor of 68%. The size of a micro-cell was determined by optimization between the photon detection efficiency (PDE) and the dynamic range for the photons of 511 keV from LYSO crystal. In the micro-cell structure, a specially designed quenching capacitor (QC) is added parallel to quenching resistor using the Metal-Insulator-Metal (MIM) process. This QC integrated SiPMs (QC-SiPM) was devised to realize rapid response of output pulses and to enhance the timing resolution of SiPM. Coincidence timing resolution of PET detectors depends on the output pulse shapes which are the convolution of the intrinsic pulse shape of scintillation crystals and the single photon pulse shape at the micro-cell in a SiPM. A quenching capacitor parallel to a quenching resistor provides a fast current path at the beginning stage of avalanche process, than reduces rising time of single photon pulse shape. In this study the rise time of the QC-SiPM signal was analyzed to be 22.5 ns while that for the regular SiPM was 34.3 ns.

关键词： SiPM TOF-PET Quenching capacitor Timing resolution

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Large volume liquid helium relief device verifacation apparatus for the alpha magnetic spectrometer

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AIP Conference Proceedings 2012年第1期1434卷 309-316页

作者： Richard John Klimas P. McIntyre John Colvin John Zeigler Steven Van Sciver Samual Ting National High Magnetic Field Laboratory Tallahassee FL 32310 USA Texas A&M University College Station Texas 77843 USA Houston Advanced Research Center The Woodlands TX 77381 Sensor Design Group LLC Houston TX 77205 National High Magnetic Laboratory Tallahassee FL 32310 USA Massachusetts Institute of Technology Cambridge MA 02139

Here we present details of an experiment for verifying the liquid helium vessel relief device for the Alpha Magnetic Spectrometer-02 (AMS-02). The relief device utilizes a series of rupture discs designed to open in the event of a vacuum failure of the AMS-02 cryogenic system. A failure of this type is classified to be a catastrophic loss of insulating vacuum accident. This apparatus differs from other approaches due to the size of the test volumes used. The verification apparatus consists of a 250 liter vessel used for the test quantity of liquid helium that is located inside a vacuum insulated vessel. A large diameter valve is suddenly opened to simulate the loss of insulating vacuum in a repeatable manner. Pressure and temperature vs. time data are presented and discussed in the context of the AMS-02 hardware configuration.

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Fabrication of a direct-type silicon pixel detector for a large area hybrid x-ray imaging device

Fabrication of a direct-type silicon pixel detector for a la...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： Kun-Sik Park Tae-Woo Kim Yong-Sun Yoon Jong-Moon Park Jin-Yeong Kang Jin-Gun Koo Bo-Woo Kim J. Kosonen Kwang-Soo No Electronics and Telecommunications Research Institute Semiconductor Process Team Daejeon South Korea Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea X-ray Sensor R&D Center Value Added Technologies Company Limited Hwaseong South Korea

We demonstrated the design and the fabrication processes of a direct-type silicon pixel detector for a digital dental radiography made using a high-resistive n-type silicon substrate. The structure of the detector is based on a fully-depleted p-i-n diode. The detector is composed of 644,328 pixels with a pitch of 35 mum. The size of the detector is 2.58 cm x 3.47 cm and it is composed of a 4-block assembly with four read-out CMOS ICs. We focused on experimentally evaluating the process conditions for the silicon pixel detector to reduce the leakage current and improve the breakdown voltage. From the experimental results, we found that the high temperature drive-in after p + ion implantation deteriorates the leakage current and p + passivation by thermal oxidation improves the breakdown voltage. The leakage current of a pixel was 0.07 pA/pixel and the breakdown voltage was more than 1700 V. The read-out IC consists of a current-integrating pixel readout CMOS chip and PbSn bumps. After bump-bonding four read-out ICs to a pixel detector and wire-bonding to a PCB, X-ray image tests showed a resolution of 11 lp/mm and provided a good image of human teeth.

关键词： Fabrication Silicon Pixel X-ray detection X-ray detectors X-ray imaging Leakage current Dentistry Radiography P-i-n diodes

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Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor

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Solid-State Electronics 2023年 204卷

作者： More, Mayuri S. Bodkhe, Gajanan A. Ingle, Nikesh N. Singh, Fouran Tsai, Meng-Lin Kim, Myunghee Shirsat, Mahendra D. RUSA Center for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University MS Aurangabad431 004 India New Delhi110 067 India Department of Materials Science and Engineering National Taiwan University of Science and Technology Taipei City10607 Taiwan Department of Food Science and Technology Yeungnam University Gyeongsangbuk-do Gyeongsan38541 Korea Republic of

High performance gas sensors are urgently needed for the welfare of modern society. A challenge for sensors to detect analytes is its high response time. Herein, a carbon monoxide sensor has been fabricated using a NiO-based metal–organic framework(MOF)/reduced graphene oxide(rGO) composite. Synthesis of NiO-MOF and NiO-MOF/rGO were carried out by hydrothermal method. All the synthesized materials were multi parametrically tested by X-ray Diffraction (XRD), Fourier Transform Infrared spectroscopy (FT-IR), Raman spectroscopy, UV–visible spectroscopy, Atomic Force Microscopy (AFM), Field emission scanning electron microscopy (Fe-SEM), Current-Voltage characteristics (I-V), Brunauer-Emmett-Teller analysis (BET), etc. for their structural, spectroscopic, morphological, electrical, and surface properties respectively. The NiO-MOF/rGO based chemiresistive sensor fabricated on a glass substrate with a 100 µm gap through a shadow mask using an e-beam evaporator is stable up to 30 days and shows a selective response towards CO with excellent response and recovery, i.e. 30 s and 70 s respectively at 25 ppm. © 2023 Elsevier Ltd

关键词： Graphene

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Towards Fabrication of Next-Generation Physical sensors Through Integrating Suspended Sub-Micron Silicon Nanowires with Microelectromechanical Systems

Towards Fabrication of Next-Generation Physical Sensors Thro...

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IEEE sensorS

作者： Basit Ali Mehdi Bostan Shirin Muhammad Muzammil Ege Nacarkucuk Sina Zare Pakzad Umut Kerimzade B. Erdem Alaca Department of Mechanical Engineering Koç University Istanbul Turkey Computational Sciences and Engineering Program Koç University Istanbul Turkey Institute of Sensor and Actuator Systems TU Wien Austria Christian Doppler Laboratory for Piezoelectric Silicon MEMS with Enhanced Sensitivity and Responsivity Institute of Sensor and Actuator Systems TU Wien Austria nSTAR-Koç University Nanofabrication and Nanocharacterization Center for Scientific and Technological Advanced Research Koç University Istanbul Turkey Surface Science and Technology Center (KUYTAM) Koç University Istanbul Turkey

ISBN: (数字)9798350363517

ISBN: (纸本)9798350363524

Silicon nanowires possess superior mechanical, electrical, and optical properties, making them ideal for next-generation sensors. This study presents a scalable technology for monolithic fabrication of sub-micron silicon nanowires with micro electromechanical systems, achieving integration of suspended sub-micron silicon nanowires within microelectromechanical systems up to 80 μm thick on Si substrates, with high yield and repeatability. The technological approach is validated on silicon-on-insulator substrates, followed by electromechanical characterization via electrical probe measurements and vibrational testing for performance validation. The presented technology is promising for the potential development of next-generation high-performance physical sensors such as accelerometers and gyroscopes.

关键词： Microelectromechanical systems sensor phenomena and characterization Vibration measurement Silicon sensor systems Nanowires Optical sensors Next generation networking Substrates Electromechanical sensors

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Evaluation of Adjacent and Opposite Current Injection Patterns for 3D Image Reconstruction of the Human Lung Based on a Realistic Model

Evaluation of Adjacent and Opposite Current Injection Patter...

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Impedance Spectroscopy (IWIS), International Workshop on

作者： Mejda Bouchhima Oumaima Bader Mariem Hafsa Salwa Sahnoun Najoua Essoukri Ben Amara Olfa Kanoun National School of Electronics and Telecommunications of Sfax University of Sfax Sfax Tunisia Professorship Measurement and Sensor Technology Chemnitz University of Technology Chemnitz Germany Université de Sousse Ecole Nationale d'Ingénieurs de Sousse LATIS - Laboratory of Advanced Technology and Intelligent Systems Sousse Tunisie Laboratory of Signals Systems Artificial Intelligence and Networks Digital Research Center of Sfax Sfax Tunisia

ISBN: (数字)9798331507626

ISBN: (纸本)9798331507633

Electrical Impedance Tomography (EIT) is a non-invasive, radiation-free imaging technique that can be used for 2D lung imaging. However, 2D EIT has a simplified geometric assumption, which neglects the 3D dynamic lung changes. This study develops a realistic 3D geometrical model including the lungs and thoracic cavity For EIT analysis. Finite Element (FE) models are generated for forward calculation and image reconstruction using an optimized Gauss-Newton (GN) algorithm. Two common current injection patterns - Adjacent and Opposite - are compared. Results show that using the lung-refined model with prior knowledge of the lungs' elements, GN converges with a Pearson correlation (r) of 0.9707 for the opposite pattern, higher than the adjacent pattern which reaches 0.9703. The second metric is the mean squared errors (MSE) between boundary voltages (BV) from reconstructed images and ground truth. It reaches $5.3965 \cdot 10^{-4},5.3963\cdot 10^{-4}$ , and $1.027{6}\cdot 10^{-12}$ for the Opposite pattern, respectively, for an empty cavity, lung-refined mesh without, and with prior knowledge of the lungs' elements. The results prove the efficiency of the Opposite injection pattern compared to the Adjacent pattern. These findings highlight the importance of injection patterns and the benefits of using a lung-refined mesh with prior knowledge of the lungs' elements for more accurate reconstructions.

关键词： Electrical impedance tomography Solid modeling Spectroscopy Three-dimensional displays Accuracy Correlation Lungs Imaging Finite element analysis Image reconstruction

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Pure frequency-based dispersive spectroscopy 9

Pure frequency-based dispersive spectroscopy

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9th Symposium on Frequency Standards and Metrology, FSM 2023

作者： Cygan, A. Bielska, K. Charczun, D. Kowzan, G. Nishiyama, A. Wcislo, P. Wójtewicz, S. Zaborowski, M. Maslowski, P. Lisak, D. Ciurylo, R. Fleisher, A.J. Gillis, K.A. Hodges, J.T. Voumard, T. Wilidi, T. Herr, T. Brasch, V. Institute of Physics Faculty of Physics Astronomy and Informatics Nicolaus Copernicus University in Toruń ul. Grudziadzka 5 Toruń87-100 Poland Chemical Sciences Division National Institute of Standards and Technology 100 Bureau Drive GaithersburgMD20899 United States Sensor Science Division National Institute of Standards and Technology 100 Bureau Drive GaithersburgMD20899 United States Deutsches Elektronen-Synchrotron DESY Notkestr. 85 Hamburg22607 Germany CSEM - Swiss Center for Electronics and Microtechnology Neuchâtel2000 Switzerland National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono Ibaraki Tsukuba305-8563 Japan Physics Department Universität Hamburg UHH Luruper Chaussee 149 Hamburg22761 Germany

Dispersion spectroscopy based on frequency measurement of the high finesse optical cavity mode shifts induced by the presence of a gas medium with absorption resonances is an attractive alternative to standard absorptive spectroscopy. The main advantage of such pure frequency-based dispersive spectroscopy technique is the unique combination of sensitivity and accuracy. High sensitivity is ensured by high finesse optical cavities providing extremely long effective optical paths. On the other hand, high accuracy is provided by frequency measurement cavity mode shift. This makes this technique free from systematic errors coming from the non-linearity of light intensity measurements, which is one of the limiting factors in typical absorptive spectroscopy. We review several realizations of dispersive spectroscopy in high finesse optical cavities from Doppler-free to broadband. These techniques are especially useful for studying weak molecular transitions applicable in testing fundamental physics, gas metrology, spectroscopic thermometry, and a new generation of spectroscopic databases. © Published under licence by IOP Publishing Ltd.

关键词： Systematic errors

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High-throughput Platform for Screening Microbial Fuel Cell Components

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Procedia technology 2017年 27卷 260-262页

作者： A.S. Vishwanathan Kartik S. Aiyer S. Siva Sankara Sai Govind Rao Department of Biosciences Sri Sathya Sai Institute of Higher Learning Prasanthi Nilayam Puttaparthi – 515134 Andhra Pradesh India Department of Physics Sri Sathya Sai Institute of Higher Learning Prasanthi Nilayam Puttaparthi – 515134 Andhra Pradesh India Center for Advanced Sensor Technology Department of Chemical Biochemical and Environmental Engineering University of Maryland Baltimore County Baltimore Maryland 21250 USA

We present a multi-anode microbial fuel cell configuration that simplifies the process of optimization of components and operating parameters. Working of the high-throughput screening platform has been described using... 详细信息

关键词： microbial fuel cell high-throughput screening optimization

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A 1kW-class S-band compact waveguide combiner unit with GaN HPAs for WPT and space communication

A 1kW-class S-band compact waveguide combiner unit with GaN ...

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European Conference on Microwave

作者： Hirofumi Noji Yasuhiro Shibuya Kosuke Isono Masakazu Hori Yuta Kobayashi Toshio Ishizaki Shigeki Furuta Yukio Moriguchi Zen-ichi Yamamoto Shigeo Kawasaki Applied Physics Department Tokyo University of Science Japan Electrical Engineering Department Tokyo University of Science Japan Institute of Space and Astronautical Science Japan AeroSpace Exploration Agency Sagamihara Kanagawa Japan Advanced Devices Development Center Panasonic Corporation Japan Technology Development Division NEC Network and Sensor Systems Limited Japan

Using a GaN high power amplifier and a double 4-inputport circular waveguide combiner, a 1kW S-band compact waveguide combiner unit operating at 2.1 GHz was assembled. The maximum power of 200W was realized with a Peltier device for heat sink. The high power amplifier unit shows the PAE of more than 50% with an AB-class operation under the temperature around 40 degrees C. The four GaN high power amplifiers were combined with the 4-inputports circular waveguide combiner, having an output power of 540W. Further the 1kW output power connecting two 500W-class power combiners was achieved. The combining efficiency of the 1kW-class power combiner unit was achieved to about 90%.

关键词： Power generation Power combiners High power amplifiers Cooling Gallium nitride

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