A remotely-measured fluorescence-based temperature measurement system designed for neonatal care is built and presented using a low-cost, off-the-shelf camera-phone image sensor. The fluorophore-based sensor salve rem...
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ISBN:
(纸本)9781467346412
A remotely-measured fluorescence-based temperature measurement system designed for neonatal care is built and presented using a low-cost, off-the-shelf camera-phone image sensor. The fluorophore-based sensor salve removes the need of attaching thermistor probes using adhesives to the neonate's skin;and therefore reduces the risk of epidermal stripping, microbial infections, etc. The system performs low-cost yet precise remote ratiometric measurements of our thermometric fluorescent salve using only a 10-bit, 120-FPS CMOS imager. An FPGA handles control and capture of image data in the region of interest with frames synchronized with a pulsing illuminator. A minimalistic algorithm using basic pixel-summations and division to compute a ratio is presented, suitable for implementation on a minimal embedded system. The resolution of the system is reported to be at least 0.18 degrees Celcius.
Thermal images were observed while irradiating a laser beam on thyroid cancer cells treated with gold nanorods submerged in phosphate buffered saline. Cancer cells were found to be dead only in the irradiation area. &...
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Thermal images were observed while irradiating a laser beam on thyroid cancer cells treated with gold nanorods submerged in phosphate buffered saline. Cancer cells were found to be dead only in the irradiation area.
Thermal images were observed while irradiating a laser beam on thyroid cancer cells treated with gold nanorods submerged in phosphate buffered saline. Cancer cells were found to be dead only in the irradiation area.
The prototype SiPM was designed and fabricated for MRI compatible PET using the customized CMOS process at National Nanofab center in KAIST. The SiPM was designed to have a size of 3x3 mm2 composed of micro-cells of 6...
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The prototype SiPM was designed and fabricated for MRI compatible PET using the customized CMOS process at National Nanofab center in KAIST. The SiPM was designed to have a size of 3x3 mm2 composed of micro-cells of 65x65 μm 2 with a fill factor of 68%. The size of a micro-cell was determined by optimization between the photon detection efficiency (PDE) and the dynamic range for the photons of 511 keV from LYSO crystal. In the micro-cell structure, a specially designed quenching capacitor (QC) is added parallel to quenching resistor using the Metal-Insulator-Metal (MIM) process. This QC integrated SiPMs (QC-SiPM) was devised to realize rapid response of output pulses and to enhance the timing resolution of SiPM. Coincidence timing resolution of PET detectors depends on the output pulse shapes which are the convolution of the intrinsic pulse shape of scintillation crystals and the single photon pulse shape at the micro-cell in a SiPM. A quenching capacitor parallel to a quenching resistor provides a fast current path at the beginning stage of avalanche process, than reduces rising time of single photon pulse shape. In this study the rise time of the QC-SiPM signal was analyzed to be 22.5 ns while that for the regular SiPM was 34.3 ns.
Here we present details of an experiment for verifying the liquid helium vessel relief device for the Alpha Magnetic Spectrometer-02 (AMS-02). The relief device utilizes a series of rupture discs designed to open in t...
Here we present details of an experiment for verifying the liquid helium vessel relief device for the Alpha Magnetic Spectrometer-02 (AMS-02). The relief device utilizes a series of rupture discs designed to open in the event of a vacuum failure of the AMS-02 cryogenic system. A failure of this type is classified to be a catastrophic loss of insulating vacuum accident. This apparatus differs from other approaches due to the size of the test volumes used. The verification apparatus consists of a 250 liter vessel used for the test quantity of liquid helium that is located inside a vacuum insulated vessel. A large diameter valve is suddenly opened to simulate the loss of insulating vacuum in a repeatable manner. Pressure and temperature vs. time data are presented and discussed in the context of the AMS-02 hardware configuration.
Direct-bandgap semiconductor with high quantum radiative efficiency can operate as a scintillator despite being opaque to its own luminescence. An interband absorption does not finish off the luminescence but merely c...
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Using a GaN high power amplifier and a double 4-inputport circular waveguide combiner, a 1kW S-band compact waveguide combiner unit operating at 2.1 GHz was assembled. The maximum power of 200W was realized with a Pel...
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Using a GaN high power amplifier and a double 4-inputport circular waveguide combiner, a 1kW S-band compact waveguide combiner unit operating at 2.1 GHz was assembled. The maximum power of 200W was realized with a Peltier device for heat sink. The high power amplifier unit shows the PAE of more than 50% with an AB-class operation under the temperature around 40 degrees C. The four GaN high power amplifiers were combined with the 4-inputports circular waveguide combiner, having an output power of 540W. Further the 1kW output power connecting two 500W-class power combiners was achieved. The combining efficiency of the 1kW-class power combiner unit was achieved to about 90%.
A planar, integrated total internal reflection (TIR) sensor for the characterizations of biofouling has been demonstrated based on angular interrogation of Fraunhofer diffraction. This sensor is made of a two-mask pro...
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Hysteresis observed in the resistive semiconductorto- metal phase transition in VO2 causes problems in bolometric readout, and thus is an obstacle in utilizing this strong phase transition in bolometric sensor applica...
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Hysteresis observed in the resistive semiconductorto- metal phase transition in VO2 causes problems in bolometric readout, and thus is an obstacle in utilizing this strong phase transition in bolometric sensor applications. It is possible to avoid the unwanted hysteresis when operating in limited temperature ranges within the hysteresis loop of VO2. Nonhysteretic branches (NHBs) traced in such limited temperature intervals turned out to have much higher temperature coefficient of resistance (TCR) than VO2 at room temperature: while TCR at 25 ?C in VO2 is close to 3%, peak TCR values in NHB-s reach 6% in VO2 films on Si/SiOi2 substrates and 21% in films on crystalline sapphire substrates. At the same time, the nanoscopic-scale mixture of semiconducting and metallic phases in VO2 within its hysteresis loop provides forpartially shunted low resistivity, thus creating an unprecedented combination of record high semiconducting TCR and metal-like low resistance. This combination may benefit the uncooled ocal plane array microbolometer IR visualization technology.
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