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作者： Yermolayev, D.M. Polushkin, E.A. Shapoval, S. Yu. Popov, V.V. Marem'yanin, K.V. Gavrilenko, V.I. Maleev, N.A. Ustinov, V.M. Zemlyakov, V.E. Yegorkin, V.I. Bespalov, V.A. Muravjov, A.V. Rumyantsev, S.L. Shur, M.S. Laboratory of Epitaxial Micro-and Nanostructures Institute of Microelectronic Technology and High-Purity Materials Chernogolovka142432 Russia Laboratory of Photonics Kotelnikov Institute of Radio Engineering and Electronics Saratov Branch Saratov410019 Russia Saratov Scientific Center Russian Academy of Sciences Saratov410028 Russia Department for Physics of Semiconductors Institute for Physics of Microstructures Nizhny Novgorod603950 Russia Physics of Semiconductor Heterostructure Ioffe Physical Technical Institute St.-Petersburg194021 Russia National Research University of Electronic Technology Zelenograd124498 Russia Center for Broadband Data Transport Science and Technology Rensselaer Polytechnic Institute TroyNY12180-3590 United States

Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated. © 2015 World Scientific Publishing Company.

关键词： III-V semiconductors

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Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors

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International Journal of High Speed Electronics and Systems 2015年第1N02期24卷

作者： D. M. Yermolayev E. A. Polushkin S. Yu. Shapoval V. V. Popov K. V. Marem’yanin V. I. Gavrilenko N. A. Maleev V. M. Ustinov V. E. Zemlyakov V. I. Yegorkin V. A. Bespalov A. V. Muravjov S. L. Rumyantsev M. S. Shur Laboratory of Epitaxial Micro- and Nanostructures Institute of Microelectronic Technology and High-Purity Materials Chernogolovka 142432 Russia Laboratory of Photonics Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) Saratov 410019 Russia Saratov Scientific Center of the Russian Academy of Sciences Saratov 410028 Russia Department for Physics of Semiconductors Institute for Physics of Microstructures Nizhny Novgorod 603950 Russia Physics of Semiconductor Heterostructure Ioffe Physical Technical Institute St. Petersburg 194021 Russia National Research University of Electronic Technology Zelenograd 124498 Russia Center for Broadband Data Transport Science and Technology Rensselaer Polytechnic Institute Troy NY 12180-3590 USA

关键词： Terahertz radiation transistor detector plasmon gallium arsenide bow-tie grating

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Optical and current noise of GaN based light emitting diodes

Optical and current noise of GaN based light emitting diodes

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2005 International Semiconductor Device Research Symposium

作者： Sawyer, S. Rumyantsev, S.L. Pala, N. Shur, M.S. Bilenko, Yu. Zhang, J.P. Hu, X. Lunev, A. Deng, J. Gaska, R. Department of Electrical Computer and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017 Rensselaer Polytechnic Institute Troy NY 12180-3590 United States Sensor Electronic Technology Inc. 1195 Atlas Road Columbia SC 29209 United States Ioffe Institute Russian Academy of Sciences 194021 St-Petersburg Russia

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ISBN: (纸本)1424400848

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Luminescence of highly excited nonpolar a-plane GaN epilayers

Luminescence of highly excited nonpolar a-plane GaN epilayer...

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作者： Juršenas, S. Kuokštis, E. Miasojedovas, S. Kurilčik, G. Žukauskas, A. Chen, C.Q. Yang, J.W. Adivarahan, V. Asif Khan, M. Shur, M.S. Institute of Materials Science and Applied Research Vilnius University Build. III Sauletekio 9 LT-10222 Vilnius Lithuania Department of Electrical Engineering University of South Carolina Columbia SC 29208 United States Center for Broadband Data Transport Rensselaer Polytechnic Institute Troy NY 12180 United States

Luminescence transients have been studied in nonpolar a-plane fully coalesced epitaxial laterally overgrown (ELOG) GaN film grown over r-plane sapphire substrate under intense photoexcitation conditions. By increasing the excitation energy density (I) from 0.3 to 4.5 mJ/cm2, three regimes of carrier relaxation were revealed. These regimes are characterized by a specific time profile of the luminescence transient. For a low excitation density, I &le 0.35 mJ/cm2, the luminescence transient is nonexponential with an enhancement of the decay rate on the late stage of the transient due to carrier capture to nonsaturated deep traps. For an excitation density increased to about I ≅= 1 mJ/cm2, an establishment of the deep-trap saturation regime with a single luminescence decay time is observed. A further increase in the excitation density above 3 mJ/cm2 leads to an essentially nonexponential luminescence decay. Here, the initial stage of rapid recombination is attributed to laterally stimulated emission, while the late recombination stage is contributed by capture to the saturated deep traps and enhanced bimolecular emission. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Gallium nitride

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Physics of GaN-based heterostructure field effect transistors

Physics of GaN-based heterostructure field effect transistor...

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2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

作者： Shur, Michael S. Gaska, Remis IEEE ECSE Department Rensselaer Polytechnic Institute Troy NY 12180 United States Sensor Electronic Technology Inc. Columbia SC 29209 United States Department of Solid State Electronics Department of ECSE and Physics Center for Broadband Data Transport Science and Technology NSF I/UCR Center Connection One APS ECS World Innovation Foundation IEEE Prize Papers Scholarships Award Committee IEEE MTT EDS AIM-Spice Sensor Electronics Technology Inc.

GaN-based field effect transistors might replace other compound semiconductor FETs in microwave and, possibly, even in millimeter and submillimeter wave applications. New device physics of these devices (primarily linked to their wurtzite symmetry and to small nitrogen mass) has to be understood to facilitate this process. In this paper, we review the new physics of polarization, electron transport, and gate leakage, and current collapse in these devices. ©2005 IEEE.

关键词： Field effect transistors

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Optical and Current Noise of GaN Based Light Emitting Diodes

Optical and Current Noise of GaN Based Light Emitting Diodes

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International Symposium Semiconductor Device Research (ISDRS)

作者： S. Sawyer S.L. Rumyantsev N. Pala M.S. Shur Yu. Bilenko J.P. Zhang X. Hu A. Lunev J. Deng R. Gaska Department of Electrical Computer and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017 Rensselaer Polytechnic Institute Troy NY USA Ioffe Physical-Technical Institute of the Russian Academy of Sciences Saint Petersburg Russia Sensor Electronic Technology Inc.orporated Columbia SC USA

Ultraviolet (UV) light emitting diodes (LEDs) are expected to find applications for solid-state lighting, water and air purification, bio-agent detection, and biological fluorescence experiments. For identifying miniscule amounts of hazardous biological pathogens and for the detection of fluorescence from protein molecules excited with the UV light (200-300nm) the light source must exhibit low noise and high stability over tens of minutes. The authors report on the low frequency fluctuations of the current and light intensity of SET UVTOPreg LEDs (fabricated by SET, Inc.) with wavelengths ranging from 265nm to 340nm

关键词： Optical noise Stimulated emission Gallium nitride Light emitting diodes Fluorescence Biomedical optical imaging Solid state lighting Purification Pathogens Proteins

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Solid-state lighting: Toward superior illumination

Solid-state lighting: Toward superior illumination

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作者： Shur, Michael S. Žukauskas, Arturas IIEE Japan Department of Electrical Computer and Systems Engineering and Physics Rensselaer Polytechnic Institute Troy NY 12180 United States Institute of Materials Science and Applied Research Vilnius University Vilnius 10222 Lithuania Department of Solid State Electronics United States Department of Physics Applied Physics and Astronomy United States Center for Broadband Data Transport Science and Technology Rensselaer Polytechnic Institute Troy NY United States American Physical Society United States Electrochemical Society United States World Innovation Foundation United States Eta Kappa Nu Electromagnetic Academy Materials Research Society United States American Society for Engineering Education United States SPIE United States American Association for the Advancement of Science United States IEEE Sensor Council United States Institute of Materials Science and Applied Research Lithuania Department of Semiconductor Physics Lithuania Lithuanian Physical Society Lithuania Lithuanian Materials Research Society Lithuania Lithuanian Academy of Sciences Lithuania

Solid-state lighting technology is now emerging as a cost-competitive, energy-efficient alternative to conventional electrical lighting. We review the history of lighting, discuss the benefits and challenges of the solid-state lighting technologies, and compare two approaches for generating white light from solid-state sources based on phosphor LEDs (which could be considered as solid-state replacement of fluorescent tubes) and multichip LED lamps, which offer many advantages, such as chromaticity control, better light quality, and higher efficiency. © 2005 IEEE.

关键词： Solid state devices

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Luminescence of highly excited nonpolara-plane GaN epilayers

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physica status solidi c 2005年第7期2卷

作者： S. Juršėnas E. Kuokštis S. Miasojedovas G. Kurilčik A. Žukauskas C. Q. Chen J. W. Yang V. Adivarahan M. Asif Khan M. S. Shur Institute of Materials Science and Applied Research Vilnius University Saulėtekio 9 Build. III LT-10222 Vilnius Lithuania Department of Electrical Engineering University of South Carolina Columbia SC 29208 USA Center for Broadband Data Transport Rensselaer Polytechnic Institute Troy NY 12180 USA

Luminescence transients have been studied in nonpolar a -plane fully coalesced epitaxial laterally overgrown (ELOG) GaN film grown over r -plane sapphire substrate under intense photoexcitation conditions. By increasing the excitation energy density ( I ) from 0.3 to 4.5 mJ/cm 2 , three regimes of carrier relaxation were revealed. These regimes are characterized by a specific time profile of the luminescence transient. For a low excitation density, I ≤ 0.35 mJ/cm 2 , the luminescence transient is nonexponential with an enhancement of the decay rate on the late stage of the transient due to carrier capture to nonsaturated deep traps. For an excitation density increased to about I ≅ 1 mJ/cm 2 , an establishment of the deep-trap saturation regime with a single luminescence decay time is observed. A further increase in the excitation density above 3 mJ/cm 2 leads to an essentially nonexponential luminescence decay. Here, the initial stage of rapid recombination is attributed to laterally stimulated emission, while the late recombination stage is contributed by capture to the saturated deep traps and enhanced bimolecular emission. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

关键词： 73.50.Gr 78.47.+p 78.55.Cr

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TeraHertz detectors based on plasma oscillations in nanometric Silicon Field Effect Transistors

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physica status solidi c 2005年第4期2卷

作者： F. Teppe Y. M. Meziani N. Dyakonova J. Łusakowski F. Bœuf T. Skotnicki D. Maude S. Rumyantsev M. S. Shur W. Knap GES CNRS-Université Montpellier 2 34900 Montpellier France ST Microelectronics BP 16 38921 Crolles France Grenoble High Magnetic Field Laboratory CNRS-MPI 38 450 Grenoble France Center for Broadband Data Transport Science and Technology and Electrical Computer and System Engineering Department Rensselaer Polytechnic Institute Troy New York 121180-3590 USA Ioffe Institute of Russian Academy of Sciences 194021 St. Petersburg Russia

We report on the experiments about detection of the THz radiation by silicon FETs with nanometer gate lengths. The observed photo-responses measured as a function of the gate voltage are all in agreement with the predictions of the Dyakonov-Shur theory. The plasma wave parameters deduced from the experiments allow us to predict also the possibility of resonant detection in THz range by nanometer size silicon devices. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

关键词： 73.20.Mf 85.30.Tv

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Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes

Noise characteristics of 340 nm and 280 nm GaN-based light e...

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作者： Sawyer, Shayla Rumyantsev, Sergey L. Pala, Nezih Shur, Michael S. Bilenko, Yuriy Gaska, Remis Kosterin, Pavel V. Salzberg, Brian M. Department of Electrical Computer and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017 Rensselaer Polytechnic Institute Troy NY 12180-3590 United States Sensor Electronic Technology Inc. 1195 Atlas Road Columbia SC 29209 United States Departments of Neuroscience and Physiology University of Pennsylvania School of Medicine Philadelphia PA 19104 United States

Low frequency fluctuations in light intensity of 340 nm and 280 nm GaN-based light emitting diodes (LEDs) are compared with noise properties of other commercially available UV and visible wavelength LEDs and halogen lamps. At low frequencies, LEDs can exhibit lower levels of noise than halogen lamps. An LED noise quality factor β is estimated for the UV LEDs. © World Scientific Publishing Company.

关键词： Light emitting diodes

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