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Physical mechanism of secondary-electron emission in Si wafers

Chinese physics B 2024年第4期33卷 677-681页

作者：赵亚楠孟祥兆彭淑婷苗光辉高玉强彭斌崔万照胡忠强 State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of EducationEngineering Research Center of Spin Quantum Sensor ChipsUniversities of Shaanxi ProvinceSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an 710049China College of Aeronautics Nanjing University of Aeronautics and AstronauticsNanjing 210016China National Key Laboratory of Science and Technology on Space Microwave China Academy of Space TechnologyXi'an 710100China Department of Physics School of Physics and Electronic InformationAnhui Normal UniversityWuhu 241000China

CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication ***,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency *** this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping *** show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles ***,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.

关键词： secondary-electron yield doping concentration escape depth Si wafer

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Anomalous heat transfer in nonequilibrium quantum systems

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Physical Review Research 2025年第1期7卷 L012044-L012044页

作者： Teng Ma Jing-Ning Zhang Yuan-Sheng Wang Hong-Yi Xie Man-Hong Yung Beijing Academy of Quantum Information Sciences Beijing 100193 China BGI Research Shenzhen 518083 China BGI Research Wuhan 430074 China School of Systems Science Beijing Normal University Beijing 100875 China Department of Physics and Astronomy Center for Quantum Research and Technology University of Oklahoma Norman Oklahoma 73069 USA Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China International Quantum Academy Shenzhen 518048 China Guangdong Provincial Key Laboratory of Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China Shenzhen Key Laboratory of Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China

Anomalous heat transfer (AHT), a process by which heat spontaneously flows from a cold system into a hot one, superficially contradicts the Clausius statement of the second law of thermodynamics. Here we provide a full classification of mechanisms of AHT in nonequilibrium quantum systems from a quantum-information perspective. For initial states in local equilibrium, we find that AHT can arise from three resources: initial correlation, intrasystem interaction, and intrasystem temperature inhomogeneity. In particular, for qubit systems, we prove that initial quantum coherence is necessary for AHT if the intersystem interactions are limited to the two-body type. We explicitly show AHT dominated by each of the mechanisms in a three-qubit system. Our classification scheme may offer a guideline for developing high-efficiency quantum autonomous thermal machines.

关键词： Qubits

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Weak measurements and quantum-to-classical transitions in free electron-photon interactions

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Light(Science & Applications) 2023年第11期12卷 2519-2529页

作者： Yiming Pan Eliahu Cohen Ebrahim Karimi Avraham Gover Norbert Schönenberger TomášChlouba Kangpeng Wang Saar Nehemia Peter Hommelhoff Ido Kaminer Yakir Aharonov School of Physical Science and Technology and Center for Transformative Science ShanghaiTech UniversityShanghai 200031China Department of Electrical Engineering TechnionHaifa 3200003Israel Department of Physics of Complex Systems Weizmann Institute of ScienceRehovot 7610001Israel Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials Bar Ilan UniversityRamat Gan 5290002Israel Department of Physics University of OttawaOttawaOntario K1N 6N5Canada Department of Electrical Engineering Physical Electronics Center for Laser-Matter Interaction(LMI)Tel Aviv UniversityRamat Aviv 6997801Israel Department of Physics Friedrich-Alexander Universität Erlangen-Nürnberg(FAU)Staudtstraße 191058 ErlangenGermany School of Physics and Astronomy Tel Aviv UniversityRamat Aviv 6997801Israel Institute for Quantum Studies Chapman UniversityOrangeCA 92866USA

How does the quantum-to-classical transition of measurement occur?This question is vital for both foundations and applications of quantum ***,we develop a new measurement-based framework for characterizing the classical and quantum free electron-photon interactions and then experimentally test *** first analyze the transition from projective to weak measurement in generic light-matter interactions and show that any classical electron-laserbeam interaction can be represented as an outcome of weak *** particular,the appearance of classical point-particle acceleration is an example of an amplified weak value resulting from weak measurement.A universal factor,exp(-Γ^(2)=2),quantifies the measurement regimes and their transition from quantum to classical,whereΓcorresponds to the ratio between the electron wavepacket size and the optical *** measurement-based formulation is experimentally verified in both limits of photon-induced near-field electron microscopy and the classical acceleration regime using a *** results shed new light on the transition from quantum to classical electrodynamics,enabling us to employ the essence of the wave-particle duality of both light and electrons in quantum measurement for exploring and applying many quantum and classical light-matter interactions.

关键词： quantum photon acceleration

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Superconducting isolators based on time-modulated coupled-resonator systems

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Physical Review Applied 2024年第5期21卷 054061-054061页

作者： Yi Zhuang Chandrashekhar Gaikwad Daria Kowsari Kater Murch Aravind Nagulu Department of Electrical and Systems Engineering Department of Physics Department of Physics & Astronomy Dornsife College of Letters Arts & Sciences Center for Quantum Information Science & Technology University of Southern California Los Angeles California 90089 USA

We present a unified approach for designing isolators based on temporally modulated coupled resonator networks. Our method leverages standard superconducting quantum interference device–based resonators as building blocks, arranged in series-coupled resonators to realize a wide range of on-chip nonreciprocal devices. The devices operate by translating microwave power into out-of-band intermodulation products in a direction-dependent way. Our theoretical studies demonstrate the effectiveness of the proposed approach, achieving isolators with near-zero insertion losses and isolation greater than 20 dB. To validate our findings, we implemented and measured a series-coupled three-resonator superconducting isolator using a single-layer superconducting process. At a base temperature of 20 mK, our device exhibited an insertion loss of 1.3 dB in the forward direction and isolation of up to 25 dB at the center frequency and greater than 15 dB across a bandwidth of 250 MHz in the reverse direction. Our approach promises to enable the design of a broad range of high-performance nonreciprocal devices for superconducting circuits.

关键词： Non-reciprocal propagation Optoelectronics quantum circuits quantum control quantum information with solid state qubits Superconducting devices Cavity resonators Microwave techniques

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Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga_(2)O_(3)heterojunction with high photoresponse

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InfoMat 2024年第2期6卷 118-130页

作者： Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang XingGuo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'anthe People's Republic of China School of Physics and Microelectronics Key Laboratory of Material PhysicsMinistry of EducationZhengzhou UniversityZhengzhouthe People's Republic of China Center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of MaterialsDepartment of Materials Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi'anthe People's Republic of China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention ***,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered *** the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 ***,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),*** to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered *** responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero *** multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.

关键词： amorphous Ga_(2)O_(3) heterojunction multifunctional PCDTBT solar-blind photodetectors

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Voltage-controlled spin-wave Doppler shift in a ferromagnetic/ferroelectric heterojunction

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Physical Review Applied 2024年第1期22卷 014085-014085页

作者： Shaojie Hu Kang Wang Tai Min Takashi Kimura Department of Physics Center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering School of Materials Science and Intelligent Engineering

Efficient manipulation of spin waves (SWs) is considered as one of the promising means for encoding information with low power consumption in next-generation spintronic devices. The SW Doppler shift is a key phenomenon obtained by manipulating SW propagation. Here, we predict an efficient way to control the SW Doppler shift by voltage-control magnetic-anisotropy-boundary (MAB) movement in the FM-FE heterojunction. From the micromagnetic simulation, we verified that the SW Doppler shift aligns well with our theoretical predictions in Fe/BaTiO3 heterostructure. The SW Doppler shift also shows an ultra-wide-band-shift (over 5 GHz) property with voltage. Such an efficient SW Doppler shift may provide one possible way to measure the Hawking radiation of an analogue black hole in the SW systems.

关键词： Magnetic anisotropy Magnons Multiferroics Spin waves Ferroelectrics Ferromagnets Multiferroic tunnel junctions

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Tuning the magnetic anisotropy in artificially layered Mn3GaN/Mn3Ga superlattices

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Physical Review Materials 2024年第1期8卷 L011401-L011401页

作者： Lu Guo Neil Campbell Alexander J. Grutter Gahee Noh Tianxiang Nan P. Quarterman Si-Young Choi Thomas Tybell Mark S. Rzchowski Chang-Beom Eom Department of Materials Science and Engineering University of Wisconsin-Madison Madison Wisconsin 53706 USA Department of Physics University of Wisconsin-Madison Madison Wisconsin 53706 USA NIST Center for Neutron Research National Institute of Standards and Technology Gaithersburg Maryland 20899 USA Department of Materials Science and Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea Center for Van der Waals Quantum Solids Institute for Basic Science Pohang 37673 Republic of Korea Department of Electronic Systems Norwegian University of Science and Technology Trondheim 7491 Norway

Artificially layered superlattices with two distinct spin structures offer new opportunities for manipulation of magnetic properties and interfacial spin configurations. We have grown epitaxial, coherent superlattices of ferrimagnetic Mn3Ga and noncollinear antiferromagnetic Mn3GaN. The out-of-plane ferrimagnetism of the Mn3Ga layer, and the Berry-phase charge to spin current generation by the noncollinear antiferromagnetic Mn3GaN layer, provide a unique combination for spintronic applications. Reactive magnetron sputtering growth resulted in abrupt transitions between the two layers through controlling the N2 flow. X-ray diffraction and cross-sectional scanning transmission electron microscopy images demonstrate clean layering and consistent modulation wavelengths, with interfacial roughness less than one unit cell. This allows investigation of the interfacial magnetic interactions. Through a combination of superconducting quantum interference device magnetometry and polarized neutron reflectometry we show that Mn3Ga/Mn3GaN superlattice structures have the out-of-plane magnetic anisotropy decreased compared to Mn3Ga single-layer films. This softening is primarily a result of reduced anisotropy energy at the interface and is linked to the Mn3GaN layer. This superlattice structure provides a platform for devices that use out-of-plane spin torques generated from an antiferromagnetic material to switch the net magnetic moment of a ferrimagnetic material. Our results demonstrate the tunability of magnetic anisotropy to allow for optimal balancing of the switching power and thermal stability in spintronic heterostructures.

关键词： Magnetic anisotropy Magnetism

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Effects of 2.6-GeV U ion irradiation on the superconductivity of the kagome superconductors CsV3Sb5 and Cs(V0.93Nb0.07)3Sb5

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Physical Review B 2024年第5期110卷 054520页

作者： Chunlei Wang Lubin Wang Yuki Hirota Wenjie Li Ryosuke Sakagami Yongkai Li Ataru Ichinose Xiaolei Yi Yangsong Chen Cheng Yu Zhiwei Wang Tsuyoshi Tamegai Department of Applied Physics Department of Physics and Electronic Engineering Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics and Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Material Science Center Yangtze Delta Region Academy of Electric Power Engineering Research Laboratory Nagasaka Yokosuka-shi Kanagawa 240-0196 Japan

We have investigated the effect of 2.6-GeV U irradiation on the superconductivity of CsV3Sb5 and Cs(V0.93Nb0.07)3Sb5 single crystals by using resistivity and magnetization measurements. The critical transition temperature for CsV3Sb5 crystal is enhanced up to 4.3 K after irradiation with a dose of BΦ=2.0T, while the critical current density is increased up to ∼0.8×104A/cm2 after irradiation with a dose of BΦ=0.5T under self-field at 2.0 K, which is about four times larger than that for the pristine crystal under the same condition. For Cs(V0.93Nb0.07)3Sb5 crystal, the critical transition temperature remains almost constant up to BΦ=2.0T, followed by monotonic suppression with further increase of dose. Besides the enhanced critical current density, we observe an anomalous peak effect in the magnetic hysteresis loop close to zero field at low irradiation doses, which can be interpreted by the matching effect in irradiated Cs(V0.93Nb0.07)3Sb5 crystals.

关键词： Coherence length Critical current Impurities in superconductors Superconducting fluctuations Superconducting gap Superconducting order parameter Superconducting phase transition Superconductivity Superfluid density Topological superconductors Vortices in superconductors

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Biss et al. Reply:

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Physical Review Letters 2024年第10期133卷 109302页

作者： Hauke Biss Lennart Sobirey Niclas Luick Markus Bohlen Jami J. Kinnunen Georg M. Bruun Thomas Lompe Henning Moritz Institut für Laserphysik The Hamburg Centre for Ultrafast Imaging Department of Applied Physics Center for Complex Quantum Systems Department of Physics and Astronomy Shenzhen Institute for Quantum Science and Engineering and Department of Physics Universität Hamburg Luruper Chaussee 149 22761 Hamburg

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Asymmetric Fraunhofer pattern in Josephson junctions from heterodimensional superlattice V_(5)S_(8)

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Chinese physics B 2022年第5期31卷 63-67页

作者： Juewen Fan Bingyan Jiang Jiaji Zhao Ran Bi Jiadong Zhou Zheng Liu Guang Yang Jie Shen Fanming Qu Li Lu Ning Kang Xiaosong Wu State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsPeking UniversityBeijing 100871China Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(Ministry of Education) Beijing Key Laboratory of Nanophotonics&Ultrafine Optoelectronic Systemsand School of PhysicsBeijing Institute of TechnologyBeijing 100081China School of Materials Science and Engineering Nanyang Technological UniversitySingapore 639798Singapore Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China Collaborative Innovation Center of Quantum Matter Beijing 100871China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China

Introduction of spin-orbit coupling(SOC)in a Josephson junction(JJ)gives rise to unusual Josephson *** investigate JJs based on a newly discovered heterodimensional superlattice V_(5)S_(8) with a special form of *** unique homointerface of our JJs enables elimination of extrinsic effects due to interfaces and *** observe asymmetric Fraunhofer patterns with respect to both the perpendicular magnetic field and the *** asymmetry is influenced by an in-plane magnetic *** of the pattern points to a nontrivial spatial distribution of the Josephson current that is intrinsic to the SOC in V_(5)S_(8).

关键词： Fraunhofer pattern Josephson junction spin-orbit coupling homointerface

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