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IEEE/ACM International Symposium on Low-Power Electronics and Design

作者： Yokokawa, Mitsuo Shoji, Fumiyoshi Uno, Atsuya Kurokawa, Motoyoshi Watanabe, Tadashi Research and Development Group Next-Generation Supercomputer RandD Center RIKEN Kobe Japan

ISBN: (纸本)9781612846590

The K computer is a distributed memory supercomputer system consisting of more than 80,000 compute nodes which is being developed by RIKEN as a Japanese national project. Its performance is aimed at achieving 10 peta-flops sustained in the LINPACK benchmark. The system is under installation and adjustment. The whole system will be operational in 2012. © 2011 IEEE.

关键词： Supercomputers

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The K computer: Japanese next-generation supercomputer development project 11

The K computer: Japanese next-generation supercomputer devel...

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International Symposium on Low Power Electronics and Design (ISLPED)

作者： Mitsuo Yokokawa Fumiyoshi Shoji Atsuya Uno Motoyoshi Kurokawa Tadashi Watanabe Research and Development Group Next-Generation Supercomputer Research and Development Center RIKEN Kobe Japan

ISBN: (纸本)9781612846606

关键词： Supercomputers File systems Computer architecture next generation networking Large scale integration Instruction sets

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Electro-migration behavior in micro-joints of Sn-57Bi solder and Cu post bumps

Electro-migration behavior in micro-joints of Sn-57Bi solder...

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44th International Symposium on Microelectronics 2011, IMAPS 2011

作者： Murayama, Kei Sakai, Taiji Imaizumi, Nobuaki Higashi, Mitsutoshi Application and Technology Development Dept. Research and Development Division Shinko Electric Industries Co. Ltd. 36 Kita Owaribe Nagano-shi 381-0014 Japan Next-generation Manufacturing Technologies Research Center Fujitsu Laboratories Ltd. 10-1 Morinosato Wakamiya Atsugi-shi 243-0197 Japan

ISBN: (纸本)9781618398505

The bonding technique for high density Flip Chip(F.C.) packages requires a low temperature and a low stress process to achieve high reliability of the micro joining. Sn-Bi solder has been noted as a low temperature bonding material. Electromigration behavior of Sn-57wt%Bi flip chip interconnection with Cu post bumps was investigated. The flip chip bumps used for this experiments consisted of Cu post formed with plating and Sn-57wt%Bi solder. Two types of under bump metal(UBM) of organic substrate were studied, that is, electroless Ni(6μm)/Au(0.5μm) on Cu pad and Cu pad. Electron flow to induce the electro-migration was from organic substrate side (Cu pad) to chip side (Cu post) with current density of 40000A/cm2 at 125 degree C. At both types of the UBM, Bi migrated and accumulated to the anode side (Cu post) and Sn migrated to the cathode side (substrate pad). Each interconnect resistance has increased to about 25% and 46% within 100 hours, respectively. However, after more than 3000 hours, they were stabilized. With Ni/Au UBM pad, Cu 3Sn/Cu6Sn5 intermetallic compounds (IMCs) were formed at the Cu bump side. And under the Bi layer Cu6Sn5/Ni-Sn compounds were formed. But we didn't observe the failure like cracks or voids at the Ni layer. With Cu pad, only Cu3Sn IMC at the Cu bump side and under the Bi layer Cu6Sn5/Cu3Sn compounds were formed after 4000 hours. Although the voids were observed at Cu3Sn/Cu interface, good electrical connection was obtained.

关键词： Electromigration

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First-principles calculations of electron states of a silicon nanowire with 100,000 atoms on the K computer

First-principles calculations of electron states of a silico...

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Supercomputing Conference

作者： Yukihiro Hasegawa Jun-Ichi Iwata Miwako Tsuji Daisuke Takahashi Atsushi Oshiyama Kazuo Minami Taisuke Boku Fumiyoshi Shoji Atsuya Uno Motoyoshi Kurokawa Hikaru Inoue Ikuo Miyoshi Mitsuo Yokokawa Development Group Next-Generation Supercomputer Research and Development Center RIKEN Japan Center for Computational Sciences University of Tsukuba Japan Computational Science and Engineering Solution Division Technical Computing Solution Unit Fujitsu Limited Japan PA Project Next Generation Technical Computing Unit Fujitsu Limited Japan

Real space DFT (RSDFT) is a simulation technique most suitable for massively-parallel architectures to perform first-principles electronic-structure calculations based on density functional theory. We here report unprecedented simulations on the electron states of silicon nanowires with up to 107,292 atoms carried out during the initial performance evaluation phase of the K computer being developed at RIKEN. The RSDFT code has been parallelized and optimized so as to make effective use of the various capabilities of the K computer. Simulation results for the self-consistent electron states of a silicon nanowire with 10,000 atoms were obtained in a run lasting about 24 hours and using 6,144 cores of the K computer. A 3.08 peta-flops sustained performance was measured for one iteration of the SCF calculation in a 107,292-atom Si nanowire calculation using 442,368 cores, which is 43.63% of the peak performance of 7.07 peta-flops.

关键词： Computers Wave functions Computational efficiency Computational modeling Extraterrestrial measurements Atomic measurements Silicon

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Technology evolutions in LTE/LTE-advanced and its applications

Technology evolutions in LTE/LTE-advanced and its applicatio...

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International Conference on Communication Systems

作者： Katsuhiko Hiramatsu Seigo Nakao Masayuki Hoshino Daichi Imamura Next-generation Mobile Communications Development Center Tokyo Research and Development Center Panasonic Corporation Yokohama Japan

This paper presents key techniques in Long-Term Evolution (LTE) and LTE-Advanced as well as its potential applications. LTE supports peak rates up to 300 Mbps in downlink (DL) and 75 Mbps in uplink (UL), whereas LTE-Advanced would support 1.2 Gbps in DL and 600 Mbps in UL [1]. Since both peak and average throughput are dramatically improved compared to High-Speed Packet Access (HSPA) [2], LTE and LTE-Advanced would enable new applications such as real-time high-definition (HD) video sharing services, which provide new user experiences in wireless communications.

关键词： Throughput MIMO Mobile communication Resource management High definition video OFDM Real time systems

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On-chip beam-steering photonic-crystal lasers

On-chip beam-steering photonic-crystal lasers

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Conference on Lasers and Electro-Optics

作者： Kurosaka, Yoshitaka Iwahashi, Seita Liang, Yong Sakai, Kyosuke Miyai, Eiji Kunishi, Wataru Ohnishi, Dai Noda, Susumu Department of Electronic Science and Engineering Kyoto University Kyoto-Daigaku-Katsura Nishikyo-ku Kyoto 615-8510 Japan Kyoto University Pioneering Research Unit for Next Generation 1-39 Goryo Ohara Nishikyo-ku Kyoto 615-8245 Japan Photonics Research and Development Center ROHM Co. Ltd. 2.1 Mizosaki-cho Salin Ukyo-ku Kyoto 615-8585 Japan

We report on a novel concept to create beam-steering lasers using photonic crystals. The lasers that we have developed indeed emit beams over a range of directions. The maximum beam steering angle is ~±30°. ... 详细信息

ISBN: (纸本)9781557528902

关键词： Photonic crystals

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development of problem solving environment for large scale electronic structure calculations based on tight binding method

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Journal of Convergence Information Technology 2010年第4期5卷

作者： Takai, Kentaro Kaneta, Chioko Uehara, Yuji Kadooka, Yoshimasa Application Research and Development Division Next Generation Technical Computing Unit FUJITSU LIMITED 1-1 Kamikodanaka 4 Nakahara-ku Kawasaki 211-8588 Japan Nanoelectronics Research Center FUJITSU LABORATORIES LTD 10-1 Morinosato-Wakamiya Atsugi 243-0197 Japan

In this paper, we present a problem solving environment (PSE) for the large scale electronic structure calculations based on the O(N) tight binding method. We have developed a simulator named Fujitsu Tight binding Simulator (FuTiS). By implementing the O(N) method on parallel computers and introducing a common interface, we can perform the electronic structure simulations involving more than a few million atoms and expand the range of the application. We have performed the tight binding calculations to explore temperature dependencies of the energy gap in silicon quantum dots with several diameters using FuTiS.

关键词： Electronic structure

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Performance Enhancement of E-UTRA Uplink Control Channel in Fast Fading Environments

Performance Enhancement of E-UTRA Uplink Control Channel in ...

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IEEE Conference on Vehicular Technology (VTC)

作者： Seigo Nakao Tomofumi Takata Daichi Imamura Katsuhiko Hiramatsu Next-Generation Mobile Communications Development Center Tokyo Research and Development Center Panasonic Corporation Yokosuka Kanagawa Japan Panasonic Mobile Communications Research and Development Laboratory Company Limited Sendai Japan Panasonic IMEC Center Panasonic Leuven Belgium

Hybrid automatic repeat request (HARQ) is employed for the 3GPP Evolved Universal Terrestrial Radio Access (E-UTRA) downlink. Each user equipment (UE) sends its ACK/NACK corresponding to the downlink data reception to the base station via a physical uplink control channel (PUCCH). The ACK/NACK signals from the UE are first code spread by the cyclic shift sequences, and then spread by the orthogonal cover sequences. The ACK/NACK signals from each UE are multiplexed by means of code division multiple access (CDMA), however, it is difficult for the conventional PUCCH code design to satisfy the required bit error rate (BER) of 10 3 in fast- fading environments because of inter-code interferences among the orthogonal cover sequences. In this paper, we propose a novel PUCCH code design which can suppress the effect of inter-code interferences among the orthogonal cover sequences. And the simulation evaluations confirm that the proposed code design can significantly improve the performance of the ACK/NACK signals via PUCCH especially in fast-fading environments.

关键词： Fading Downlink Multiaccess communication Signal design Communication system control Strontium Interference Bit error rate Mobile communication research and development

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Tight focal spot and long depth of focus by radially polarized, narrow-width annular beams from photonic-crystal lasers

Tight focal spot and long depth of focus by radially polariz...

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Conference on Lasers and Electro-Optics, CLEO 2009

作者： Kitamura, Kyoko Sakai, Kyosuke Kurosaka, Yoshitaka Miyai, Eiji Kunishi, Wataru Ohnishi, Dai Noda, Susumu Department of Electronic Science and Engineering Kyoto University Kyoto-Daigaku-Katsura Nishikyo-ku Kyoto 615-8510 Japan Kyoto University Pioneering Research Unit for Next Generation Kyoto-Daigaku-Katsura Nishikyo-ku Kyoto 615-8510 Japan Photonics Research and Development Center ROHM Co. Ltd 21 Mizosaki-cho Saiin Ukyo-ku Kyoto 615-8585 Japan

We found that tighter focal spots with longer depths of focus are achieved by radially polarized annular beams with controlled inner and outer radii, which could lead to high-tolerance, super-resolution applications i... 详细信息

ISBN: (纸本)9781557528698

关键词： Electric fields Laser beams Laser materials processing Optical systems Photonic crystal lasers Superresolution Lasers and laser optics (140.0140) Diode lasers (140.2020) Physical optics (260.0260) Diffraction theory (260.1960)

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The Broad Institute-Six Years Later

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CHEMISTRY & BIOLOGY 2010年第4期17卷 311-312页

作者： McCarthy, Alice Main Text “In June 2003 the scientific and medical communities at MIT Harvard University and its affiliated hospitals and the Whitehead Institute banded together as collaborating partners to form the Eli and Edythe L. Broad Institute based in Cambridge MA. The Broad Institute established with initial funding from a $100 million philanthropic donation from the Los Angeles-based Broad family was primarily viewed as a marriage between the Whitehead Institute's Center for Genome Research (WICGR) and the Harvard Institute of Chemistry and Cell Biology (ICCB). Eli Broad founder and chairman of AIG SunAmerica Inc. explained “the purpose of the Broad Institute is to create a new type of research institute to build on the accomplishments of the human genome project and to move to clinical applications to both prevent and cure diseases.” Every Thursday morning we meet with perhaps 20 faculty members and 100 other researchers to discuss what we're all doing and should be doing next. -David Altschuler This paragraph was written five years ago when the Broad Institute was in its very earliest days as a life science research community (McCarthy 2005). Since that time “the Broad” as it's known has kept true to Eli Broad's vision having attracted a talented group of researchers faculty trainees and professional staff. This 1600 person research community known internally as “Broadies” includes faculty staff and students from throughout the MIT and Harvard biomedical research communities and beyond with collaborations spanning over a hundred private and public institutions in more than 40 countries worldwide. “What is special about the Broad is that we have people from Harvard MIT and the Harvard hospitals come together and work on problems of shared interest that could not be solved in their own individuals labs” explains David Altshuler M.D. Ph.D. Deputy Director and one of the Broad's six core faculty members. “These problems require expertise beyond any one principal investigator and in

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