This paper describes the implementation of transmission-line matrix (TLM) method algorithms on a massively parallelcomputer (DECmpp 12000), the technique of distributedcomputing in the UNIX environment, and the comb...
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This paper describes the implementation of transmission-line matrix (TLM) method algorithms on a massively parallelcomputer (DECmpp 12000), the technique of distributedcomputing in the UNIX environment, and the combination of TLM analysis with Prony's method as well as with autoregressive moving average (ARMA) digital signal processing for electromagnetic field modelling. By combining these advanced computation techniques, typical electromagnetic field modelling of microwave structures by TLM analysis can be accelerated by a few orders of magnitude.
In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices ...
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In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.
The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TF...
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ISBN:
(数字)9781728142326
ISBN:
(纸本)9781728142333
The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (t n ) of n-epitaxial region, and source-to-drain length (L SDeff ) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 × 10 18 cm -3 , an optimal t n as low (about 0.5 nm), and a L SDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all.
Uncertainty in medical image segmentation tasks, especially inter-rater variability, arising from differences in interpretations and annotations by various experts, presents a significant challenge in achieving consis...
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