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SSRN 2024年

作者： Liu, Zhihui Shen, Kai Cheng, Yongjun Wang, Bi Zhou, Jiankang Wu, Mengxuan Sun, Yi Ding, Wanyu Wang, Zixi State Key Laboratory of Tribology in Advanced Equipment Tsinghua University Beijing100084 China College of Materials Science and Engineering Dalian Jiaotong University Dalian116028 China Engineering Research Center of Continuous Extrusion Ministry of Education Dalian Jiaotong University Dalian116028 China Laboratory of Low frequency Electromagnetic Communication Technology The WMCRT CSSC China State Key Laboratory of High-end Compressor and System Technology Anhui Hefei230031 China

Accurate calibration of the Seebeck coefficient is crucial for reliable temperature measurements using thin-film thermocouples. In this study, we investigate the calibration of NiCr/NiSi thin-film thermocouples for precise temperature measurements. Using the magnetron sputtering method, we prepared a series of NiCr/NiSi film thermocouples and obtained their Seebeck coefficients through standard calibration procedures. The results demonstrate good consistency and reproducibility of the thermoelectric output within the temperature range of 0°C to 505°C. Notably, the Seebeck coefficients remain nearly constant regardless of changes in the top and bottom order or resistance values of the NiCr and NiSi thermoelectrodes. Furthermore, we found that the addition of an SiO2 protective film does not affect the calibration Seebeck coefficients of the NiCr/NiSi film thermocouples, with values of 7.94 μV/°C and 7.96 μV/°C for film thermocouples with and without SiO2, respectively. These findings provide valuable insights into the calibration of thin-film thermocouples and can enhance the accuracy of temperature measurements. The study contributes to scientific research and engineering applications in the field of thin-film thermocouple calibration. © 2024, The Authors. All rights reserved.

关键词： Seebeck coefficient

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An Internal Electrode Strategy for Enhancing the Stability and Durability of Triboelectric Nanogenerator

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SSRN 2022年

作者： Xie, Yibing Wang, Zihao Wang, Yameng Antwi-Afari, Maxwell Fordjour Hu, Jiashun Mi, Hao-Yang Yang, Bao Liu, Chuntai Shen, Changyu National Engineering Research Center for Advanced Polymer Processing Technology Key Laboratory of Advanced Materials Processing Mold of Ministry of Education Zhengzhou University Zhengzhou450001 China School of Civil Engineering & Transportation South China University of Technology Guangzhou510640 China Department of Civil Engineering College of Engineering and Physical Sciences Aston University BirminghamB4 7ET United Kingdom

In this study, an internal electrode triboelectric nanogenerator (IE-TENG) design is proposed to enhance the stability, durability, and long-term performance of TENGs. By embedding a mesh structured metal electrode in the friction layer, the IE-TENG becomes more flexible, lightweight, and robust than traditional external electrode TENG (EE-TENG). When using copper mesh internal electrode with higher grid density, greater output can be achieved by comparing a series of polydimethylsiloxane(PDMS)-based IE-TENG. An equivalent output was obtained when using 60 copper mesh compared to EE-TENG, and the trend maintains for tribonegative low-density polyethylene (LDPE) and tribopositive polyamide (PA) polymers, which verifies the usability of the approach and the effective induction area of the internal electrode. The internal electrode design significantly enhanced the tolerance of the device to harsh environments and guaranteed excellent output stability. In addition, the IE-TENGs possess superior resistance to external interference and had about three times shorter saturation time for surface charges. As a demonstration, the IE-TENG can be used for collecting motion sensing signals and detecting various sports activities. This study provides a novel strategy for the designing and customizing of highly integrated TENGs with enhanced durability for practical long-term applications. © 2022, The Authors. All rights reserved.

关键词： Nanogenerators

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Adaptive Robust Control of an Uncertain Robotic Manipulator with Guaranteed Transient and Steady State Performance

Adaptive Robust Control of an Uncertain Robotic Manipulator ...

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International Conference on advanced Robotics and Mechatronics (ICARM)

作者： Yifan Liu Dejie Yu Zilu Wang Zheshuo Zhang Hui Yin State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body Hunan University Changsha P. R. China Intelligent Transportation System Research Center School of information and electrical engineering Zhejiang Uni-versity City College Hangzhou Zhejiang P. R. China School of Mechanical and Automotive Engineering South China University of Technology Guangzhou Guangdong P. R. China

Guaranteeing human-specified performance in robot control subject to complex uncertainties is challenging. This study takes time-varying (possibly fast), bounded with unknown bounds uncertainties into consideration in controlling an uncertain robotic manipulator system (URMS). We employ an adaptive law to on-line estimate the unknown bounds for uncertainty compensation, and prescribed transient and steady state performance (TSSP) are guaranteed by using a state transformation technique. As a result, a class of adaptive robust control with prescribed TSSP is proposed. Simulation results are provided to validate the effectiveness of the proposed approach.

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Tm:Y2O3 ceramic laser mode-locked with SESAM

Tm:Y2O3 ceramic laser mode-locked with SESAM

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2022 advanced Solid State Lasers, ASSL 2022

作者： Zhang, Ning Liu, Shande Wang, Zhanxin Liu, Jian Xu, Xiaodong Xu, Jun Wang, Jun Liu, Peng Ma, Jie Shen, Deyuan Tang, Dingyuan Lin, Hui Zhang, Jian Chen, Weidong Zhao, Yongguang Griebner, Uwe Petrov, Valentin Jiangsu Key Laboratory of Advanced Laser Materials and Devices Jiangsu Normal University Xuzhou2211161 China College of Electronic and Information Engineering Shandong University of Science and Technology Qingdao266590 China School of Physics Science and Engineering Institute for Advanced Study Tongji University Shanghai200092 China School of Electrical and Electronic Engineering Nanyang Technological University 639798 Singapore Engineering Research Center of Optical Instrument and System Ministry of Education Shanghai Key Lab of Modern Optics and Systems University of Shanghai for Science and Technology Shanghai200093 China Shanghai Institute of Ceramics Chinese Academy of Science Shanghai201899 China Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou350002 China Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy Berlin12489 Germany

The generation of Fourier-transform-limited pulses as short as 75 fs at ~2.06 μm for an average output power of 0.26 W at 86.3-MHz repetition rate is demonstrated with a SESAM mode-locked Tm:Y2O3 ceramic laser. ©... 详细信息

ISBN: (纸本)9781957171203

关键词： Laser mode locking

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A Low Delay AES Round Transform Architecture Using Constant Matrix Multiplications Merging Technologies

A Low Delay AES Round Transform Architecture Using Constant ...

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IEEE Conference on Industrial Electronics and Applications (ICIEA)

作者： Xinxing Zheng Xiaoqiang Zhang Fan Yang Mingyu Xu Han Yan College of Information Engineering Wuhu Institute of Technology Wuhu China Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment Ministry of Education Wuhu China Engineering Research Center of Vehicle-Mounted Display Integration System Wuhu China College of Electrical Engineering Anhui Polytechnic University Wuhu China

ISBN: (纸本)9781665409858

This paper presents a low delay architecture design method for the hardware implementation of the advanced Encryption Standard (AES) algorithm. The proposed architecture is designed by using constant matrix multiplications (CMM) merging technologies. To reduce the area cost in hardware implementations, S-box/InvS-box is usually implemented with composite field arithmetic (CFA) technologies. In this paper, CMM in CFA-based S-box/InvS-box are further merged with constant coefficient multiplications in MixColumns/ InvMixColumns, which can also be expressed as CMM forms. By the merging, the delay of the hardware implementation of encryption round transform is reduced at the cost of slight area cost increasing, and both delay and area cost are reduced in hardware implementations of decryption round transform. Hardware complexities analysis indicates that our designs have less delay compared with previous works.

关键词： Industrial electronics Costs Design methodology Merging Transforms Hardware Delays

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Glass Forming Region and Er3+ 2.7 Μm Emission Properties of Al2o3-Cao-Sro Infrared Glass

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SSRN 2024年

作者： Liu, Yin Wan, Jie Xiao, Yongbao Yu, Dechao College of Metallurgy and Materials Engineering Chongqing University of Science and Technology Chongqing401331 China Laboratory of Infrared Materials and Devices Advanced Technology Research Institute Ningbo University Ningbo315211 China State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques Institute of Optical Communication Materials South China University of Technology Guangzhou510641 China College of Materials Science and Engineering Chongqing University Chongqing400045 China Engineering Research Center of Optical Instrument and System Ministry of Education Shanghai Key Lab of Modern Optical System University of Shanghai for Science and Technology Shanghai200093 China

Glass forming regions of Al2O3-CaO-SrO (AlCaSr) system were systematically studied and clearly depicted by a combination of thermodynamic calculation method and traditional melt-quenching experiments. The glass forming region was first found with a composition range of Al2O3: 12-32 mol%, CaO: 43-68 mol%, and SrO: 20-36 mol%. Moreover, two representative glass compositions, 26.6Al2O3-49.4CaO-24SrO (AlCaSr-1) and 17.48Al2O3-58.52CaO-24SrO (AlCaSr-2), in central part of the experimental glass forming region and the corresponding glass doped with 1 mol% Er2O3, i.e., AlCaSr-1-Er and AlCaSr-2-Er, were selected and carefully prepared in our lab. Detailed investigations proved that the AlCaSr glasses had excellent comprehensive properties with high Tg temperature (~ 800 °C), wide transparency wavelength range (0.3-6 μm), and low maximum phonon energy (~ 770 cm-1), and good 2.7 μm mid-infrared emitting properties via doping Er3+ activators. These results highlight the potential application of AlCaSr glasses as infrared materials, and could benefit the development of high-performance infrared glasses. © 2024, The Authors. All rights reserved.

关键词： Aluminum oxide

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Recent Advances in Triboelectric Nanogenerators: From Technological Progress to Commercial Applications

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ACS Nano 2023年第12期17卷 11087-11219页

作者： Choi, Dongwhi Lee, Younghoon Lin, Zong-Hong Cho, Sumin Kim, Miso Ao, Chi Kit Soh, Siowling Sohn, Changwan Jeong, Chang Kyu Lee, Jeongwan Lee, Minbaek Lee, Seungah Ryu, Jungho Parashar, Parag Cho, Yujang Ahn, Jaewan Kim, Il-Doo Jiang, Feng Lee, Pooi See Khandelwal, Gaurav Kim, Sang-Jae Kim, Hyun Soo Song, Hyun-Cheol Kim, Minje Nah, Junghyo Kim, Wook Menge, Habtamu Gebeyehu Park, Yong Tae Xu, Wei Hao, Jianhua Park, Hyosik Lee, Ju-Hyuck Lee, Dong-Min Kim, Sang-Woo Park, Ji Young Zhang, Haixia Zi, Yunlong Guo, Ru Cheng, Jia Yang, Ze Xie, Yannan Lee, Sangmin Chung, Jihoon Oh, Il-Kwon Kim, Ji-Seok Cheng, Tinghai Gao, Qi Cheng, Gang Gu, Guangqin Shim, Minseob Jung, Jeehoon Yun, Changwoo Zhang, Chi Liu, Guoxu Chen, Yufeng Kim, Suhan Chen, Xiangyu Hu, Jun Pu, Xiong Guo, Zi Hao Wang, Xudong Chen, Jun Xiao, Xiao Xie, Xing Jarin, Mourin Zhang, Hulin Lai, Ying-Chih He, Tianyiyi Kim, Hakjeong Park, Inkyu Ahn, Junseong Huynh, Nghia Dinh Yang, Ya Wang, Zhong Lin Baik, Jeong Min Choi, Dukhyun Kyung Hee University Gyeonggi Yongin17104 Korea Republic of Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Department of Mechanical Engineering Soft Robotics Research Center Seoul National University Seoul08826 Korea Republic of Department of Mechanical Engineering Gachon University Seongnam13120 Korea Republic of Department of Biomedical Engineering National Taiwan University Taipei10617 Taiwan Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing Hua University Hsinchu30013 Taiwan School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon16419 Korea Republic of Sungkyunkwan University 2066 Seobu-ro Gyeonggi Suwon16419 Korea Republic of Department of Chemical and Biomolecular Engineering National University of Singapore 4 Engineering Drive 4 117585 Singapore Division of Advanced Materials Engineering Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Department of Physics Inha University 100 Inha-ro Incheon22212 Korea Republic of School of Materials Science & Engineering Yeungnam University Gyeongbuk Gyeongsan38541 Korea Republic of 291 Daehak-ro Daejeon34141 Korea Republic of School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore Institute of Flexible Electronics Technology of Tsinghua Zhejiang Jiaxing314000 China Nanomaterials and System Lab Major of Mechatronics Engineering Faculty of Applied Energy System Jeju National University Jeju632-43 Korea Republic of School of Engineering University of Glasgow GlasgowG128QQ United Kingdom Seoul02792 Korea Republic of Department of Physics Inha University Incheon22212 Korea Republic of Suwon16419 Korea Republic of Department of

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade. © 2023 The Authors. Published by American Chemical Society

关键词： Nanogenerators

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Sound absorption performance of acoustic metamaterials composed of double-layer honeycomb structure

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Journal of Central South University 2021年第9期28卷 2947-2960页

作者： WANG Da XIE Su-chao YANG Shi-chen LI Zhen Key Laboratory of Traffic Safety on Track of Ministry of Education Changsha 410075China Joint International Research Laboratory of Key Technology for Rail Traffic Safety Changsha 410075China School of Traffic&Transportation Engineering Central South UniversityChangsha 410075China National Innovation Center of Advanced Rail Transit Equipment Zhuzhou 412001China

The purpose of the research is to assess the sound absorption performance(SAP)of acoustic metamaterials made of double-layer Nomex honeycomb structures in which a micro-orifice corresponds to a honeycomb *** this purpose,the influences of structural parameters on the SAP of acoustic metamaterials were investigated by using experimental testing and a validated theoretical *** addition,the sandwich structure was optimized by the genetic *** research shows that the panel thickness and micro-orifice diameter mainly affect the second resonant frequency and second peak sound absorption coefficient(SAC)of the *** unit cell size is found to influence the first and second resonant frequencies and two peaks of the *** extremely low side-length of the honeycomb core decreases the SAP of the structure for low-frequency noise ***,the sandwich structure presents a better SAP when the diameter of micro-orifices on the front micro-perforated panel(MPP)exceeds that of the back *** sandwich structure shows better noise reduction performance after the optimization aiming at the noise frequency outside trains.

关键词： acoustic metamaterials sound absorption honeycomb sandwich panel micro-perforated panel

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Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

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Science Bulletin 2022年第5期67卷 529-536,M0004页

作者： Lingmei Kong Jialong Wu Yunguo Li Fan Cao Feijiu Wang Qianqian Wu Piaoyang Shen Chengxi Zhang Yun Luo Lin Wang Lyudmila Turyanska Xingwei Ding Jianhua Zhang Yongbiao Zhao Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei 230026China Henan Key Laboratory of Photovoltaic Materials Henan UniversityKaifeng 475004China Faculty of Engineering University of NottinghamNottingham NG72RDUK Center for Optoelectronic Engineering Research Department of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming 650091China

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

关键词： Light-emitting field-effect transistors Quantum dots Electroluminescence External quantum efficiency

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