We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for...
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We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.
We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for...
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Yttrium silicate activated with Ce3+, (Y1−xCex)2SiO5, has been found to be an efficient phosphor that can potentially be used as the blue-emitting component in field emission flat panel displays. This highly refractor...
Yttrium silicate activated with Ce3+, (Y1−xCex)2SiO5, has been found to be an efficient phosphor that can potentially be used as the blue-emitting component in field emission flat panel displays. This highly refractory powder can be synthesized by combustion synthesis, a low cost technique used to fabricate multicomponent oxide powders in a single step process. The effect of activator concentration and post-synthesis annealing was examined on the fluorescent properties. The powders were found to be monoclinic space group P21/c in the as-synthesized state, and transformed to monoclinic space group C2/c after annealing. The maximum luminous emission intensity was reached after a one hour anneal at 1350°C for x=0.0075, with the peak Ce3+ emission wavelength between 420 and 450 nm. When co-doped with Gd3+, no increase in the emission intensity was observed.
Garnet phosphors have potential for use in field emission displays (FEDs). Greenemitting Gd3Ga5O12:Tb (GGG:Tb) and Y3Al5O12:Tb (YAG:Tb) are possible alternatives to ZnO:Zn, because of their excellent resistance to bur...
Garnet phosphors have potential for use in field emission displays (FEDs). Greenemitting Gd3Ga5O12:Tb (GGG:Tb) and Y3Al5O12:Tb (YAG:Tb) are possible alternatives to ZnO:Zn, because of their excellent resistance to burn, low-voltage efficiency, (3.5 lm/W from GGG:Tb at 800 V), and saturation resistance at high power densities. Hydrothermal and combustion synthesis techniques were employed to improve the low-voltage efficiency of YAG:Tb, and Y3Ga5O12:Tb (YGG:Tb). Synthetic technique did not affect low-voltage (100-1000 V) efficiency, but affected the particle size, morphology, and bum resistance. The small particle size phosphors obtained via hydrothermal (<1 µm) and combustion reactions (<1 µm) would benefit projection TV, high-definition TV (HDTV), and heads-up displays (HUDs), where smaller pixel sizes are required for high resolution.
We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise l...
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We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and the Hooge parameter α H ~10 -3 . Both top-gate and back-gate devices were studied. The analysis of the noise spectral-density dependence on the gate biases helped us to elucidate the noise sources in these devices. We compared the noise performance of graphene devices with that of carbon nanotube devices. It was determined that graphene devices works better than carbon nanotube devices in terms of the low-frequency noise. The obtained results are important for graphene electronic, communication and sensor applications.
Cells offer natural examples of highly efficient networks of nanomachines. Accordingly, both intracellular and intercellular communication mechanisms in nature are looked to as a source of inspiration and instruction ...
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We report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resi...
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We report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/ f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.
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