Though not very often, there are some cases in the literature where discrepancies exist in the temperature dependence of elastic constants of materials. A particular example of this case is the behavior of C12 coeffic...
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Though not very often, there are some cases in the literature where discrepancies exist in the temperature dependence of elastic constants of materials. A particular example of this case is the behavior of C12 coefficient of a simple metal, aluminum. In this paper we attempt to provide insight into various contributions to temperature dependence in elastic properties by investigating the thermoelastic properties of fcc aluminum as a function of temperature through the use of two computational techniques and experiments. First, ab initio calculations based on density functional theory (DFT) are used in combination with quasiharmonic theory to calculate the elastic constants at finite temperatures through a strain-free energy approach. molecular dynamics (MD) calculations using tight-binding potentials are then used to extract the elastic constants through a fluctuation-based formalism. Through this dynamic approach, the different contributions (Born, kinetic, and stress fluctuations) to the elastic constants are isolated and the underlying physical basis for the observed thermally induced softening is elucidated. The two approaches are then used to shed light on the relatively large discrepancies in the reported temperature dependence of the elastic constants of fcc aluminum. Finally, the polycrystalline elastic constants (and their temperature dependence) of fcc aluminum are determined using resonant ultrasound spectroscopy (RUS) and compared to previously published data as well as the atomistic calculations performed in this work.
X-ray microfluorescence imaging technique has been used as a significant tool in order to investigate minerals contents in some kinds of materials. The aim of this study was to evaluate the elemental distribution of c...
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There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the com...
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We have investigated the MOVPE growth of In x Ga 1-x As metamorphic buffer layer (MBL) structures with a focus on techniques to improve the surface morphology and determine the influence of morphology on subsequently ...
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We have investigated the MOVPE growth of In x Ga 1-x As metamorphic buffer layer (MBL) structures with a focus on techniques to improve the surface morphology and determine the influence of morphology on subsequently grown single-junction device structures. To improve the surface roughness of the underlying MBL, chemical-Mechanical Polishing (CMP) is employed and MOVPE regrowth of single-junction (SJ) solar cells on top of the polished surface is performed. AFM image analysis indicates the CMP process is effective in reducing the step-graded In x Ga 1-x As MBL surface roughness from ~7-10 nm (as-grown) to 2.3 nm post CMP. A post-CMP ozone/HF treatment was found to be effective in removing silica residue remaining on the surface from the CMP process, allowing for the growth of films on top of the MBL surface subjected to CMP. Improved short circuit current density (J sc ) and external quantum efficiency (QE) were obtained from SJ (1eV) devices which employ the CMP process compared with those on as-grown MBLs.
This study examined the interfacial adhesion, mechanical, and thermal properties of compatibilizing agent-treated and non-treated biocomposites as a function of the type of compatibilizing agent. The tensile strength,...
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There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the com...
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There have been reports of improvements in the thermoelectric figure of merit through the use of nanostructured materials to suppress the lattice thermal conductivity. Here, we report on a fundamental study of the combined effects of defect planes and surface scattering on phonon transport and thermoelectric properties of defect-engineered InAs nanowires. A microfabricated device is employed to measure the thermal conductivity and thermopower of individual suspended indium arsenide nanowires grown by metal organic vapor phase epitaxy. The four-probe measurement device consists of platinum resistance thermometers and electrodes patterned on two adjacent SiNx membranes. A nanowire was suspended between the two membranes, and electrical contact between the nanowire and the platinum electrodes was made with the evaporation of a Ni/Pd film through a shadow mask. The exposed back side of the device substrate allows for characterization of the crystal structure of the suspended nanowire with transmission electron microscopy (TEM) following measurement. The 100-200 nm diameter zincblende (ZB) InAs nanowire samples were grown with randomly spaced twin defects, stacking faults, or phases boundaries perpendicular to the nanowire growth direction, as revealed by transmission electron microscopy (TEM) analysis. Compared to single-crystal ZB InAs nanowires with a similar lateral dimension, the thermal conductivity of the defect-engineered nanowires is reduced by fifty percent at room temperature.
Homogeneous ZnO powders with antibacterial activity have been synthesized by hydrothermal treatment at 160 ∼ 190°C under 1.01 ∼1.09 MPa for 10 ∼ 50 h using Zn(NO3)2·6H 2O, hexamethylenetetramine ((CH2)6N ...
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Homogeneous ZnO powders with antibacterial activity have been synthesized by hydrothermal treatment at 160 ∼ 190°C under 1.01 ∼1.09 MPa for 10 ∼ 50 h using Zn(NO3)2·6H 2O, hexamethylenetetramine ((CH2)6N 4) and ethanol. Their particle morphology and specific surface areas have been characterized in relation with the synthesis conditions. A luminol chemiluminescence (CL) measurement has been applied to evaluate their antibacterial activity under dark conditions. Experimental results revealed that the ZnO nanorod powders (a length≤ 500nm and a diameter*C/20h/1.09 MPa, showed the highest photon counts of 3.75x 105, which value was ten times higher than that (3.59 x 104 counts) of conventional ZnO powders commercially available.
Step-graded InGaP_ySb_(1-y) and In_xGa_(1-x)As metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGa...
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ISBN:
(纸本)9781457717536
Step-graded InGaP_ySb_(1-y) and In_xGa_(1-x)As metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaP_ySb_(1-y) MBLs exhibit significantly lower surface roughness (~4.7nm) compared with more conventional graded group III In_xGa_(1-x)As MBLs, which typically have rms surface roughness in the range of 7-14nm. To reduce the surface roughness of the In_xGa_(1-x)As MBL, a post growth chemical-Mechanical Polishing (CMP) procedure is implemented. AFM image analysis indicates the CMP process is effective in reducing the step-graded In_xGa_(1-x)As MBL surface roughness from ~7.3 nm (as-grown) to 2.3 nm post CMP. Preliminary studies indicate that bulk InGaAs layers regrown on top of the MBL subjected to CMP exhibit improved static and transient PL characteristics compared with those deposited on as-grown MBLs.
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