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Mechanical properties and life time of high Pb-containing solder joints 21

Mechanical properties and life time of high Pb-containing so...

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21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017

作者： Khatibi, G. Kotas, A. Betzwar Chrstn. Doppler Lab. for Lifetime and Reliability of Interfaces in Complex Multi-Mat. Electronics Institute for Chemical Technologies and Analytics TU Wien Vienna Austria

ISBN: (纸本)9780956808646

High lead-containing soft solders with melting points of above 300°C are still widely used in power semiconductors for high temperature applications due to lack of reliable and cost effective lead-free alternative solutions. In this study the influence of aging on stress-strain response and fatigue life of solder joints prepared with two types of high-Pb solder alloys with different Sn content was investigated. Tensile experiments were carried out by using model solder joints prepared with Cu or Ni strips as substrates. multi-layered samples consisting of Ni-coated Si chips soldered on metallized ceramic substrates were used for isothermal bending fatigue studies. The growth rate of the Cu-Sn interfacial intermetallic compound (IMC) was found to be considerably higher than that of Ni-Sn IMC. Independent from the substrate mat.rial a higher IMC growth rate was always observed in the solder joints prepared with a higher Sn content. On the other hand, these joints showed a clear improvement of tensile and fatigue properties. The moderate fatigue response of the PbSnAg solder joints with a lower Sn content could be related to the occurrence of interfacial delamination. Furthermore, it was found that not only the Sn concentration of the solder but also the thickness of the wettable substrate affects the spalling and delamination of the interfacial IMC layer. Finally, it is demonstrated that accelerated isothermal bending fatigue testing can be used for rapid evaluation of large area solder joints in electronics. © 2017 IMAPS Europe.

关键词： Intermetallics

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A delamination study on metallization stacks of power semiconductors 21

A delamination study on metallization stacks of power semico...

引用

21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017

作者： Walter, T. Khatibi, G. Chrstn. Doppler Lab. for Lifetime and Reliability of Interfaces in Complex Multi-Mat. Electronics Institute for Chemical Technologies and Analytics TU Wien Vienna Austria

ISBN: (纸本)9780956808646

The requirements on the interfacial strength of metallization stacks in modern power semiconductor devices are becoming more and more demanding. Delamination is a common failure mode found in such microelectronic components. Residual stresses, originating during deposition commonly occur in these metallization film stacks. It has been demonstrated that these residual stresses can significantly change the driving force for interfacial delamination. The four-point bending (4PB) test is an appropriate method to quantitatively measure the delamination resistance and energy release rate. In this study the influence of Cu metallization thickness and residual stresses on the adhesion strength of SiOx/SiNx/TiW/Cu film stacks on Silicon were investigated. In addition to detailed microstructural and chemical analysis of the film stacks and its interfaces, we used X-ray diffraction (XRD) residual stress measurements as well as wafer bow methods to estimat. the stress in the Cu films and the film stack respectively. Static 4PB technique was used in order to determine the interfacial adhesion properties of the samples. In addition Finite Element Analysis was performed to verify analytical calculations. Delamination occurred always in the interface between Si and the amorphous SiOx layer. This can be explained by the loading conditions imposed by the 4PB set-up and the selected sample geometry. © 2017 IMAPS Europe.

关键词： Residual stresses

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Crystal plasticity modeling of the heat affected zone of copper micro-wires 21

Crystal plasticity modeling of the heat affected zone of cop...

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21st European Microelectronics and Packaging Conference and Exhibition, EMPC 2017

作者： Mazloum-Nejadari, Ali Lederer, Martin Khatibi, Golta Nicolics, Johann Infineon AG Neubiberg Germany Institute of Sensor and Actuator Systems TU Wien Austria Chrstn. Doppler Lab. for Lifetime and Reliability of Interfaces in Complex Multi-Mat. Electronics Institute CTA TU Wien Austria

ISBN: (纸本)9780956808646

Due to the ongoing miniaturization of electronic parts, there is the concern that the diameters of micro-wires approach the dimensions of the crystalline microstructure. Owing to fabrication technology and harsh environmental conditions during service, the wires are often exposed to elevated temperature. This leads to grain growth until the cross section of a wire includes only a few grains. In the worst case, wires develop a bamboo-microstructure, where the cross section of a wire is characterized by a single grain. In consequence, depending on the crystallographic orientation, some grains can deform by easy glide. Thereby, the yield stress is drastically reduced compared to polycrystalline mat.rials. In conclusion, the reliability of electronic devices deteriorates. Such effects were studied in detail on the basis of Crystal Plasticity Finite Element simulations. Within this approach, every single grain is modelled according to its own orientation, and crystallographic slip develops on the glide systems with the highest Schmid factors during loading. During glide deformat.on the dislocation density of activated slip systems increases. This leads to strain hardening, since the dislocations of one glide system appear as forest dislocations for the other systems. In this way, the mat.rial strength of a grain depends on its deformat.on history. A grain embedded in a mat.ix of neighboring grain shows much higher resistance to plastic deformat.on than free standing grains. The mat.rial parameters of these simulations were chosen from literature to fit experiments for copper single crystals. The results of this study are well illustrated in several deformat.on plots relating the stress distributions to dislocation densities. © 2017 IMAPS Europe.

关键词： Finite element method

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