In this paper a novel reduced complexity detection method named modified symbol flipping method is introduced and its advantages on reducing the burden of the calculations at the receiver compared to the optimum maxim...
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This paper presents a method to assist in the tedious procedure of reconstructing ceramic vessels from unearthed archaeological shards or fragments using 3D computer vision-enabling technologies. The method uses vesse...
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The Linear Amplification with Nonlinear Components (LINC) power amplifier structure combiner implementation has an effect on the linearity and efficiency of the design. Understanding and using this tradeoff is helpful...
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With the widespread use of high-voltage GaN devices and other high-power transistors, understanding the heating of a device during large-signal excitation and measurement is critical, both to ensure efficient operatio...
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Compressive sensing (CS) is a new approach to simultaneous sensing and compression for sparse and compressible signals. While the discrete Fourier transform has been widely used for CS of frequency-sparse signals, it ...
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We present a new protocol for information dissemination in intermittently connected networks. The objective of the protocol is to disseminate a piece of information, a podcast episode in our scenario, to a subset of n...
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Experiments and complimentary simulations are presented to demonstrate the size-dependent infiltration and detection of variable length nucleic acids in porous silicon with controllable pore diameters in the range of ...
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Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) are used to image surfaces of GaN grown by molecular beam epitaxy (MBE). Numerical simulations are used to assist in the interpret...
Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) are used to image surfaces of GaN grown by molecular beam epitaxy (MBE). Numerical simulations are used to assist in the interpretation of SKPM images. Detailed analysis of the same area using both techniques allows imaging of surface potential variations arising from the presence of negatively charged dislocations and dislocation-related current leakage paths. Correlations between the charge state of dislocations, conductivity of leakage current paths, and possibly dislocation type can thereby be established. Approximately 25% of the leakage paths appear to be spatially correlated with negatively charged dislocation features. This is approximately the level of correlation expected due to spatial overlap of randomly distributed, distinct features of the size observed, suggesting that the negatively charged dislocations are distinct from those responsible for localized leakage paths found in GaN. The effects of charged dislocation networks on the local potential profile is modeled and discussed.
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