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Flows in micro fluidic networks: From theory to experiment

Natural Computing 2004年第4期3卷 395-410页

作者： Van Noort, Danny McCaskill, John S. Dept. of Ecol./Evolutionary Biology Princeton University Princeton NJ 08544 Guyot Hall United States Sch. of Computer Science/Engineering Seoul National University Sinlim-dong Seoul 151-742 San 56-1 South Korea Biomolecular Information Processing Ruhr-Universität Bochum Fraunhofer Inst. Zentrum Schloss D-53754 Sankt Augustin Germany

When complex flow structures are designed, such as in DNA computing, it is essential to be able to predict the flow pattern of the solutions in the fluidic network. A model based on the resistance of the channels and flow velocities of the inlets can eliminated re-iterative design steps. We have constructed a symbolic model using Mathematica® to determine the desired flow pattern based on the equations of Ohm and Kirchoff. The values from this simulation were used in a flow simulation program and then tested in a microflow network. Results show that the simulation and calculation match very well, while the experiments in the fluidic network show a flow pattern as predicted by the model. © 2004 Kluwer Academic Publishers.

关键词： DNA computing DNA selection Flow simulations Microfluidics Microtechnolgy

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Extraction of pitch in adverse conditions

Extraction of pitch in adverse conditions

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International Conference on Acoustics, Speech, and Signal Processing (ICASSP)

作者： S.R.M. Prasanna B. Yegnanarayana Dept. of Comput. Sci. & Eng. Indian Inst. of Technol. Madras Chennai India Department of Computer Science and Engineering Speech and Vision Laboratory Indian Institute of Technology Madras Chennai INDIA

The paper proposes a method for the extraction of pitch in adverse conditions. The real environment, in which degradation is due to several unpredictable sources, like additive noise, reverberation and channel noise, is treated as an adverse condition. The proposed method is based on knowledge of glottal closure (GC) events. A GC event is the inst.nt at which closure of vocal folds takes place within a pitch period. The Hilbert envelope of the linear prediction (LP) residual gives information about the location of GC events. Autocorrelation analysis is performed on the Hilbert envelope of the LP residual. The properties of the Hilbert envelope of the LP residual are exploited for the extraction of pitch from the autocorrelation sequence. The results of the proposed method are compared with the simple inverse filtering technique (SIFT) algorithm. The performance of the proposed algorithm is found to be superior, even in adverse conditions.

关键词： Speech Data mining Frequency estimation Frequency domain analysis Autocorrelation Time measurement Degradation Additive noise Filtering algorithms Frequency measurement

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3D GOI CMOSFETs with novel IrO/sub 2/(Hf) dual gates and high-k dielectric on 1P6M-0.18 /spl mu/m-CMOS

3D GOI CMOSFETs with novel IrO/sub 2/(Hf) dual gates and hig...

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International Electron Devices Meeting (IEDM)

作者： D.S. Yu A. Chin C.C. Laio C.F. Lee C.F. Cheng W.J. Chen C. Zhu M.-F. Li W.J. Yoo S.P. McAlister D.L. Kwong Nano Science Technology Ctr. Department of Electronics Engineering National Chiao Tung University University System of Taiwan Hsinchu Taiwan Dept. of Electronics Eng. Univ. System of Taiwan Hsinchu Taiwan ROC Silicon Nano Devices Laboratory Department of Electrical and Computer Engineering National University of Singapore Singapore Dept. of Electrical and Computer Engineering UST Hsinchu Taiwan ROC Graduate inst. of Materials Eng. National Pingtung University of Science and Technology Pingtung Taiwan Taiwan National Research Council of Canada Ottawa Canada Department of Electrical & Computer Engineering University of Technology Austin TX USA Dept. of Electrical & Computer Engineering The Univ. of Texas Austin TX USA

For the first time, we demonstrate 3D integration of self-aligned IrO/sub 2/(Hf)/LaAlO/sub 3//GOI CMOSFETs above 0.18 /spl mu/m Si CMOSFETs. At EOT=1.4nm, the novel IrO/sub 2/(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO/sub 3//Si devices have high electron and hole mobilities of 203 and 67 cm/sup 2//Vs. On the 3D structure the LaAlO/sub 3// GOI shows even higher 389 and 234 cm/sup 2//Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation.

关键词： CMOSFETs High-K gate dielectrics Energy consumption MOSFETs Charge carrier processes Electron mobility Integrated circuit interconnections Very large scale integration Cost function Rapid thermal processing

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Denoising and compression of ultrasonic signals using model-based estimation techniques

Denoising and compression of ultrasonic signals using model-...

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IEEE Symposium (IUS) Ultrasonics

作者： R. Demirli J. Saniic Department of Electrical and Computer Engineering Illinois Institute of Technology Chicago Illinois USA Illinois Institute of Technology Chicago IL US Dept. of Electr. & Comput. Eng. Illinois Inst. of Technol. Chicago IL USA

Two model based decomposition (MBD) methods using maximum likelihood estimation (MLE) and matching pursuits (MP) methods are examined for denoising and compressing ultrasonic RF echoes. MBD is a sparse data adaptive and nonorthogonal decomposition. Sparse decompositions provide efficient denoising and high rate compression by representing the signal in terms of a limited number of functions adapted to the signal. We examined MLE and MP methods for sparse decomposition of ultrasonic RF echoes in terms of Gabor functions. MLE requires estimating the parameter sets of an unknown number of Gabor functions that best represent ultrasonic data in presence of noise (superimposed signal estimation). MP requires estimating signal structures by extracting best matching Gabor functions sequentially from ultrasonic data and building up the decomposition (signal approximation). While MLE targets the best representation of signal in noise, MP targets a greedy representation. Denosing and compression capabilities of these two types of signal decomposition methods are examined. MP provides a high fidelity representation of the signal at high compression rates (typically 20:1) while suppressing the noise effectively. However, MLE is computationally costly for long data segments because of the iterative nonlinear estimation involved. MP also provides a good representation of the signal at high compression rates (typically 15:1) while providing a time-frequency (TF) representation of the signal. Furthermore, MP is computationally feasible to implement a real-time ultrasonic data compression system.

关键词： Noise reduction Matching pursuit algorithms Maximum likelihood estimation Radio frequency Parameter estimation Data mining Signal resolution Time frequency analysis Real time systems Data compression

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Scaling pFET hot-electron injection

Scaling pFET hot-electron injection

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International Workshop on Computational Electronics

作者： Duffy Hasler Department of Electrical and Computer Engineering Georgia Institute of technology Atlanta GA USA Georgia Institute of Technology Atlanta GA US Dept. of Electr. & Comput. Eng. Georgia Inst. of Technol. Atlanta GA USA

This paper elaborates on a previously introduced (Duffy and Hasler, 2003) analytical model for hot-electron injection in p-channel MOSFETs. Hot-electron injection is frequently exploited to remove stored charge in floating-gate circuits. The hole-induced impact ionization provides an otherwise empty conduction band with electrons. Although most of the electrons migrate to the bulk, under the proper conditions some inject through the gate oxide. It has been shown that impact ionization and hot-electron injection can be analytically solved using a self-consistent model derived from a spatially-varying Boltzmann transport equation (Conwell, 1967; Hasler et al., 1998). The primary mechanisms for altering the distribution function (and hence the collision operators for the BTE) are the aforementioned impact ionization and optical phonon absorption and emission.

关键词： MOSFETs Hot carriers Impact ionization Boltzmann equation Phonons Semiconductor device modeling

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An arithmetical hierarchy of the law of excluded middle and related principles

An arithmetical hierarchy of the law of excluded middle and ...

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Annual Symposium on Logic in computer Science

作者： Y. Akama S. Berardi S. Hayashi U. Kohlenbach Mathematical Institute Tohoku University Sendai Japan Department of Informatics University of Turin Turin Italy Department of Computer and Systems Engineering Kobe University Kobe Japan Dept. of Computer and Systems Eng. Kobc University Kobe Japan Department of Mathematics Darmstadt University of Technology Darmstadt Germany

The topic of this paper is relative constructivism. We are concerned with classifying nonconstructive principles from the constructive viewpoint. We compare, up to provability in intuitionistic arithmetic, subclassical principles like Markov's principle, (a function-free version of) weak Konig's lemma, Post's theorem, excluded middle for simply existential and simply universal statements, and many others. Our motivations are rooted in the experience of one of the authors with an extended program extraction and of another author with bound extraction from classical proofs.

关键词： Logic computer science

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Low workfunction fully silicided gate on SiO/sub 2//Si and LaAlO/sub 3//GOI n-MOSFETs

Low workfunction fully silicided gate on SiO/sub 2//Si and L...

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Device Research Conference

作者： D.S. Yu A. Chin B.F. Hung W.J. Chen C.X. Zhu M.-F. Li S.Y. Zhu D.L. Kwong Department of Electronics Engineering Nano Sci. Tech. Center Univ. System of Taiwan National Chiao Tung University Hsinchu Taiwan Dept. of Electronics Eng. Univ. System of Taiwan Hsinchu ROC Taiwan ROC Graduate Inst. of Materials Eng. National Pingtung University of Science and Technology Pingtung Taiwan Dept. of Electrical & Computer Eng. National Univ. of Singapore Singapore Dept. of Electrical & Computer Eng. National Univ. of Singapore Singapore Singapore Dept. of Electrical & Computer Engineering The Univ. of Texas Austin TX USA

The main challenges for metal-gate/high-k CMOS are to find dual workfunction gates and robust high-k dielectrics. The low workfunction metal-gate for n-MOS is especially difficult since it reacts with oxygen rapidly and is hard to form a silicide or nitride. We have successfully developed 4.2 and 4.3 eV low workfunction NiSi:Hf and NiTiSi gates that were integrated onto SiO/sub 2//Si, novel high-k LaAlO/sub 3//Si and LaAlO/sub 3//GOI n-MOSFETs. The Hf or TiSi is for low workfunction control and the NiSi is for low resistivity.

关键词： MOSFET circuits Artificial intelligence Voltage Capacitors Capacitance-voltage characteristics Electron mobility

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Mechanism of negative bias temperature inst.bility in CMOS devices: degradation, recovery and impact of nitrogen

Mechanism of negative bias temperature instability in CMOS d...

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International Electron Devices Meeting (IEDM)

作者： S. Mahapatra P. Bharath Kumar T.R. Dalei D. Sana M.A. Alam Department of Electrical Engineering Indian Institute of Technology Bombay Bombay India School of Electrical and Computer Engineering Purdue University West Lafayette IN USA Indian Institute of Technology Delhi New Delhi Delhi IN Dept. of Electr. Eng. Indian Inst. of Technol. Bombay India Department of Electrical Engineering Indian Institute of Technology Bombay India

NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.

关键词： Negative bias temperature inst.bility Degradation Nitrogen Stress Niobium compounds Titanium compounds Pulse measurements Hot carriers Impact ionization Temperature dependence

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Storage system support for continuous media applications, part 2: Multiple disks, memory, and integration

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IEEE Distributed Systems Online 2004年第2期5卷 1-1页

作者： Halvorsen, Pål Griwodz, Carsten Goebel, Vera Lund, Ketil Plagemann, Thomas Walpole, Jonathan University of Oslo Oregon Health and Science University Dept. of Informatics Univ. of Oslo PO Box 1080 Blindern N-0316 Oslo Norway UniK-Univ. Graduate Center PO Box 70 N-2027 Kjeller Norway Dept. of Computer Science and Eng. Oregon Grad. Inst. Sci./Technology 20000 N.W. Walker Rd. Beaverton OR 97291-1000

To meet multimedia servers' increasing performance and scalability requirements, researchers must design multimedia storage system components that adapt to various workloads and requirements. They must also develo... 详细信息

关键词： Magnetic disk storage

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Panel on future challenges in modeling methodology

Panel on future challenges in modeling methodology

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Proceedings of the 2004 Winter Simulation Conference

作者： Taylor, Simon J. E. Paul, Ray J. Straßburger, Steffen Lendermann, Peter Reichenthal, Steven W. Turner, Stephen J. Ctr. for Applied Simulation Modeling Dept. of Info. Systems and Computing Brunel University Uxbridge Middx UB8 3PH United Kingdom Fraunhofer Inst. Fact. Oper. A. Department Virtual Development Sandtorstraße 22 39106 Magdeburg Germany Prod. and Logistics Planning Group Singapore Inst. of Mfg. Technology 71 Nanyang Drive Singapore 638075 Singapore Boeing 3370 Miraloma Ave. Anaheim CA 92803 United States Parallel and Distributed Comp. Ctr. School of Computer Engineering Nanyang Technological University Singapore 639798 Singapore

This panel paper presents the views of six researchers and practitioners of simulation modeling, Collectively we attempt to address a range of key future challenges to modeling methodology. It is hoped that the views of this paper, and the presentations made by the panelists at the 2004 Winter Simulation Conference will raise awareness and stimulate further discussion on the future of modeling methodology in areas such as modeling problems in business applications, human factors and geographically dispersed networks;rapid model development and maintenance;legacy modeling approaches;markup languages;virtual interactive process design and simulation;standards;and Grid computing.

关键词： Information analysis

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