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InGaN red micro-LEDs were fabricated with indium tin oxide (ITO) and metal n-electrode designs. Micro-LEDs with ITO electrodes achieved a peak on-wafer external quantum efficiency of 2.1% (at 1.25 A cm−2) and wall-plug efficiency of 1.7% (at 0.64 A cm−2), representing 1.6 times and 1.5 times improvements compared to metal-based electrodes. Improved performance was attributed to the transparency of ITO, enabling light extraction, while metal electrodes block emission. Both configurations achieved a low leakage current density (≤ 10–7 A cm−2) and a high peak emission wavelength around 650 nm. These results represent a strong potential for low-power consumption required/area-limited AR/VR applications.
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版权所有:内蒙古大学图书馆 技术提供:维普资讯• 智图
内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
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