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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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Efficient Automatic External Defibrillator Using the Slope of Hilbert Transformed ECG Signals 11

Efficient Automatic External Defibrillator Using the Slope o...

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11th International Japan-Africa Conference on Electronics, communications, and Computations, JAC-ECC 2023

作者： Elsagheer, Samir A. Sayed, Mohammed S. Hassan, Mohsen A. Egypt-Japan University of Science and Technology Computer Science and Information Technology Alexandria21934 Egypt Aswan Universty Facurlty of Engineering Aswan Egypt Egypt-Japan University of Science and Technology Department of Electronics and Communications Engineering Alexandria21934 Egypt Zagazig University Department of Electronics and Communications Engineering Zagazig Egypt Egypt-Japan University of Science and Technology Materials science and engineering program IDE Alexandria21934 Egypt

ISBN: (纸本)9798350369328

Sudden cardiac arrest (SCA) is a life-threatening condition that demands immediate intervention. The key to survival often lies in the timely and precise analysis of electrocardiogram (ECG) signals to determine the necessity of a shock from an Automatic External Defibrillator (AED). In this paper, we address the critical need for improved accuracy in AED decision-making by presenting a novel approach that leverages the Hilbert Transform to calculate the slope of ECG signals by harnessing the analytical power of Hilbert Transformed ECG signals. By scrutinizing the heart's electrical activity through this method, we aim to enhance the AED's ability to differentiate between cases of ventricular fibrillation and other non-shockable rhythms, ultimately leading to more efficient and effective treatment. Our research explores two distinct approaches for signal analysis and correlates their findings to achieve higher precision in defibrillation decisions. To validate the effectiveness of our approach, we employ a diverse and publicly available dataset containing various heart conditions, allowing us to demonstrate the robustness of our method across a wide spectrum of cases. This study represents a significant advancement in the field of automatic external defibrillation, with the potential to save countless lives through more accurate and timely interventions. © 2023 IEEE.

关键词： Defibrillators

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Extraction of c- F os Protein Regions from Mouse Brain Slice Images using Multi-channelization, 1 x 1 Convolution and U -Net 13

Extraction of c- F os Protein Regions from Mouse Brain Slice...

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Joint 13th International Conference on Soft Computing and Intelligent Systems and 25th International Symposium on Advanced Intelligent Systems, SCIS and ISIS 2024

作者： Wang, Ziyue Okamura, Hibiki Luo, Shijie Hayashi, Yu Takizawa, Hotaka Master's Program in Computer Science University of Tsukuba Tsukuba Japan International Institute for Integrative Sleep Medicine University of Tsukuba Ph.D. Program in Humanics Tsukuba Japan International Institute for Integrative Sleep Medicine University of Tsukuba Tsukuba Japan Institute of Systems and Information Engineering Academic Computing and Communications Center University of Tsukuba Tsukuba Japan

ISBN: (纸本)9798350373332

This study proposed a novel extraction method of c-Fos protein regions in DAB(3,3'-diaminobenzidine)-stained mouse brain slice images using the U-Net model combined with the multi-channelization and 1×1 convolution techniques. Our U-Net m odel, called 1× 1 conv U-Net, was applied to three DAB- strainedmouse slice images whose resolutions were 1000x1000 pixels. The experimental results demonstrated that the 1×1 conv U-Net outperformed the conventional U-Net. © 2024 IEEE.

关键词： Mammals

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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A Comprehensive Key Features Analysis and Recommendations based Cyber Intrusion Detection for Satellite-Terrestrial Networks

A Comprehensive Key Features Analysis and Recommendations ba...

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Novel Intelligent and Leading Emerging Sciences Conference (NILES)

作者： Esraa Shehab Shaimaa Ahmed Elsaid Ahmed M. Mattar Dept. of Electrical Engineering Computer Engineering and Systems program Badr University in Cairo (BUC) Cairo Egypt Dept. of Electronics and Communications Engineering Zagazig University Zagazig Egypt Dept. of Computer engineering and artificial intelligence military technical college Cairo Egypt

ISBN: (数字)9798350378511

ISBN: (纸本)9798350378528

The integration of Satellite-Terrestrial Networks (ISTN) necessitates advanced security measures, particularly Intrusion Detection Systems (IDSs). This study introduces hybrid sequential intrusion detection models for ISTNs, combining Deep Learning (DL) and Machine Learning (ML) techniques. The models employ both anomaly-based and signature-based detection to enhance accuracy, utilizing methods such as Extra Trees (ET), Decision Trees (DT), Random Forest (RF), XGBoost (XGB), and Gated Recurrent Units (GRU). These models are chosen for their superior performance and are used sequentially to improve IDSs effectiveness. RF-based Sequential Feature Selection (RF-SFS) is also utilized to reduce dataset dimensionality, which in turn decreases the computational costs for each model. Evaluations using UNSW-NB15 and STIN datasets-representing terrestrial and satellite traffic, respectively-demonstrate the models' superiority over traditional IDSs. The XGB-ET model achieved 99.99% accuracy in anomaly detection, while the XGB-GRU model attained 89% accuracy in signature-based detection on the UNSW-NB15 dataset. On the STIN dataset, the ET-DT-GRU model reached 96.47% accuracy in signature-based detection. Additionally, RF-SFS reduced execution times, with training and testing speedups up to 2.8x.

关键词： Training Accuracy Satellites Computational modeling Intrusion detection Space-air-ground integrated networks Feature extraction Security Random forests Testing

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Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT under Bias and Temperature Stress

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IEEE Journal of the Electron Devices Society 2024年 12卷 464-471页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan City701401 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate and analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a thin nanosheet-based channel, and an effective high- κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs (DG-IGZO-NS-TFTs) are tested under positive and negative bias stress at variant temperatures, and the resulting modulations are analyzed critically. The reported DG-IGZO-NSTFTs exhibit a negative side threshold voltage shift (Δ Vth) accompanied by an increase in Ion/Ion(0) under negative bias temperature stress (NBTS) at elevated temperatures, which indicates the presence of additional charges. An anomalous negative side shifting of the Vth is observed under positive bias temperature stress (PBTS), where diffused hydrogen atoms are identified as introducing excess n-type carriers into the channel and causing the observed Δ Vth. The spectroscopic analysis is performed to establish evidence for the assumed mechanisms, and the role of individual gates is investigated in the context of performance variance under temperature-bias stress. Moreover, the partial reversibility of the stress-induced degradation is experimentally established and methodically discussed. Overall, the reported results offer a comprehensive understanding of scaled-channel DG-NS-IGZO-TFTs, which help shape performance-enhancement strategies, control degradation mechanisms, and define appropriate application scenarios. © 2013 IEEE.

关键词： Thin film transistors

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Learn2Evade: Learning-based generative model for evading PDF malware classifiers

IEEE Transactions on Artificial Intelligence

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IEEE Transactions on Artificial Intelligence 2021年第4期2卷 299-313页

作者： Bae, Ho Lee, Younghan Kim, Yohan Hwang, Uiwon Yoon, Sungroh Paek, Yunheung Department of Cyber Security EwhaWomans University Seoul03760 Korea Republic of Department of Electrical and Computer Engineering Seoul National University Seoul08826 Korea Republic of Department of Electrical and Computer Engineering Interdisciplinary Program in Bioinformatics Interdisciplinary Program in Artificial Intelligence Automation and Systems Research Institute Institute of NewMedia and Communications Institute of Engineering Research Seoul National University Seoul08826 Korea Republic of

Recent research has shown that a small perturbation to an input may forcibly change the prediction of a machine learning (ML) model. Such variants are commonly referred to as adversarial examples. Early studies have focused mostly on ML models for image processing and expanded to other applications, including those for malware classification. In this article, we focus on the problem of finding adversarial examples against ML-based portable document format (PDF) malware *** deem that our problem is more challenging than those againstMLmodels for image processing because of the highly complex data structure of PDF and of an additional constraint that the generated PDF should exhibit malicious behavior. To resolve our problem, we propose a variant of generative adversarial networks that generate evasive variant PDF malware (without any crash), which can be classified as benign by various existing classifiers yetmaintaining the original malicious behavior. Our model exploits the target classifier as the second discriminator to rapidly generate an evasive variant PDF with our new feature selection process that includes unique features extracted from malicious PDF files. We evaluate our technique against three representative PDF malware classifiers (Hidost 13, Hidost 16, and PDFrate-v2) and further examine its effectiveness with AntiVirus engines from VirusTotal. To the best of our knowledge, our work is the first to analyze the performance against the commercial AntiVirus engines. Our model finds, with great speed, evasive variants for all selected seeds against state-of-The-Art PDF malware classifiers and raises a serious security concern in the presence of adversaries. © 2021 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.

关键词： Generative adversarial networks

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Modified Turnstile Antenna Design for Multi-Band and Broadband Applications

Modified Turnstile Antenna Design for Multi-Band and Broadba...

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USNC-URSI Radio Science Meeting (Joint with AP-S Symposium)

作者： I-Fong Chen Chia-Mei Fei-Lung Wu Jian-An Xie Dept. of Computer and Communication School of Electronics and Electrical Engineering Dongguan Polytechnic Jinwen University of Science and Technology New Taipei City Taiwan Department of Communications Engineering Feng Chia University Taichung City Taiwan Ph.D. Program of Electrical and Communications Engineering Feng Chia University Taichung City Taiwan

ISBN: (数字)9789463968119

ISBN: (纸本)9798350359497

The proposed antenna with a size of 90 mm x 90 mm, and the ground portion is 64 mm x 64 mm, which material is FR4 glass epoxy substrate with the thickness of 1.6 mm, relative permittivity of 4.3 and loss tangent of 0.023, consists of four modified dipole elements and four power dividers, as shown in Figure. 1. For the multi-band and broadband operation, three dipole antennas were shunted to be a dipole element. The electrical-length of the dipole element can be determined from the one quarter-wave length at the 2.45 GHz, 5.5 GHz and 6.525 GHz, for covering 2400 MHz-2500 MHz, 5150 MHz-5850 MHz and 5925 MHz-7125 MHz. In order to operates in various modes such as normal mode and axial mode, the modified four port triple-band microstrip series power divider was designed. In normal mode, it radiates horizontally polarized waves where as in axial mode, it radiates circularly polarized waves. The radiated patterns of the proposed antenna as shown in Figure. 2. The features of the proposed antenna are shown in the Table I. Impressive radiated gains and efficiencies are obtained.

关键词： Power dividers Dipole antennas Conferences Glass Broadband communication Broadband antennas Microstrip

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Quality Improvements in the Electrical Design of Typical DC-DC Electronic Power Converter for High-Voltage Applications 8

Quality Improvements in the Electrical Design of Typical DC-...

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8th International Conference on engineering and Emerging Technologies, ICEET 2022

作者： Recto, King Harold A. Escoto, Miguel T. Hernandez, Noel B. Ateneo de Manila University Department of Electronics Computer and Communications Engineering Quezon City Philippines Electrical and Electronics Engineering Institute University of the Philippines Diliman Quezon City Philippines Centro Escolar University Post-doctoral Program in Quality Management of the Graduate School Manila Philippines

ISBN: (纸本)9781665491068

The green transition has brought about a worldwide-shift to the use of renewables as alternative energy sources. Because of this, high voltage DC has been a field of interest in power electronics due to its capability in efficiently transmitting power to reach remote areas. Typical DC-DC electronic power converter design has the capability of boosting voltage level to a certain extent but not enough for high-voltage applications. Using the DMAIC Approach of the Six Sigma, quality improvements in the design was proposed to stabilize operating frequency, bring up the output voltage from 100 VDC to 4,000 VDC and provide at least 10% margin of error in the apparent power measured at the output side to offset inherent losses in the electrical design. These proposed quality improvements were sustained by designing a control circuit that would ensure the attainment of the parameters set in the Define Phase of the DMAIC Approach. The result of the study is a practical 12 VDC to 4,000 VDC boost converter design that has incorporated all the proposed quality improvements. © 2022 IEEE.

关键词： Six sigma

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