检索结果-内蒙古大学图书馆

作者： Li, Fu-Hai Chiu, Yung-Yueh Lee, Yen-Hui Chang, Ru-Wei Yang, Bo-Jun Sun, Wein-Town Lee, Eric Kuo, Chao-Wei Shirota, Riichiro Institute of Communications Engineering National Chiao Tung University Hsinchu 300 Taiwan Department of Electrical and Computer Engineering National Chiao Tung University Hsinchu 300 Taiwan SONOS Technology Research Program EMemory Technology Inc. Jhube Hsinchu 302 Taiwan

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking. © 2013 The Japan Society of Applied Physics.

关键词： Silicon nitride

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Deep-Hand: A Deep Inference Vision Approach of Recognizing a Hand Sign Language using American Alphabet 2

Deep-Hand: A Deep Inference Vision Approach of Recognizing a...

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2nd IEEE International Conference on Computational Intelligence and Knowledge Economy, ICCIKE 2021

作者： Alon, Helcy D. Ligayo, Michael Angelo D. Melegrito, Mark P. Franco Cunanan, Christopher Uy Ii, Edgar E. Technological Institute of the Philippines Graduate Program Manila Philippines Quezon City University Department of Electronics Engineering Quezon City Philippines Technological University of the Philippines Department of Electronics and Communications Engineering Manila Philippines Polytechnic University of the Philippines Department of Computer Engineering Philippines Bohol Island State University College of Engineering and Architecture Tagbilaran Philippines

ISBN: (纸本)9781665429214

Sign-Language is to help people with hearing or speaking disabilities who are not able to communicate well with other people. Communicating with deaf people is a challenge for some speakers and people who do not know sign language. What the study proposed is to help people with such disabilities using the American Sign-Language with the corresponding hand gesture. Deaf individuals will be able to communicate or interact with other people conveniently. The study proposed hand gesture or hand sign language detection trained by using the YOLOv3 algorithm that aims to detect hand gestures or hand sign language that can recognize its equivalent letter alphabet. The study tools such as LabelImg for annotating the data set, categorizing each image of hand gestures based on their equivalent letter alphabet. In this study, Model 18 with 95.1804% training accuracy, 90.8242% validation accuracy, and mAP of 0.8275 is used for the final testing. As video with different hand gestures is presented, the results of every hand gesture detected range over 90%. © 2021 IEEE.

关键词： Object detection

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Quality Improvements in the Electrical Design of Typical DC-DC Electronic Power Converter for High-Voltage Applications 8

Quality Improvements in the Electrical Design of Typical DC-...

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8th International Conference on engineering and Emerging Technologies, ICEET 2022

作者： Recto, King Harold A. Escoto, Miguel T. Hernandez, Noel B. Ateneo de Manila University Department of Electronics Computer and Communications Engineering Quezon City Philippines Electrical and Electronics Engineering Institute University of the Philippines Diliman Quezon City Philippines Centro Escolar University Post-doctoral Program in Quality Management of the Graduate School Manila Philippines

ISBN: (纸本)9781665491068

The green transition has brought about a worldwide-shift to the use of renewables as alternative energy sources. Because of this, high voltage DC has been a field of interest in power electronics due to its capability in efficiently transmitting power to reach remote areas. Typical DC-DC electronic power converter design has the capability of boosting voltage level to a certain extent but not enough for high-voltage applications. Using the DMAIC Approach of the Six Sigma, quality improvements in the design was proposed to stabilize operating frequency, bring up the output voltage from 100 VDC to 4,000 VDC and provide at least 10% margin of error in the apparent power measured at the output side to offset inherent losses in the electrical design. These proposed quality improvements were sustained by designing a control circuit that would ensure the attainment of the parameters set in the Define Phase of the DMAIC Approach. The result of the study is a practical 12 VDC to 4,000 VDC boost converter design that has incorporated all the proposed quality improvements. © 2022 IEEE.

关键词： Six sigma

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A proposal for an integrated utilities engineering-Management M.S. program

A proposal for an integrated utilities Engineering-Managemen...

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2004 37th Annual Frontiers of Power Conference

作者： Barnes, Frank S. Fuchs, Ewald F. Tietjen, Jill S. Silverstein, Joann Ko, Hon-Yim Lookabaugh, Tom Brown, Timothy X. Sicker, Douglas C. University of Colorado AAAS IEEE International Engineering Consortium National Academy of Engineering Department of Electrical Engineering LLC McNeil Technologies Board for Girl Scouts Mile Hi Council Georgia Transmission Corporation of Tucker GA ABET Inc. National Council of Examiners for Engineering and Surveying SWE IEEE Power Engineering Society Department of Civil Environmental and Architectural Engineering UCB National Water Research Institute Women in Engineering Program Center of the American West College of Engineering Department of Civil Environmental and Archetectural Engineering University of Colorado Jet Propulsion Laboratory Computer Science Department Interdisciplinary Telecommunications Program University of Colorado Boulder University of Colorado Boulder Electrical Engineering and Interdisciplinary Telecommunications University of Colorado Boulder Department of Computer Science University of Colorado Boulder ITP Laboratory ACM Internet Society Faculty of the Progress and Freedom Foundation Institute for Regulatory Law and Economics Aspen Institute Communications and Society Program CU Computer and Communications Security Center Center for Science and Technology Policy Research Research and Engineering Center for Unmanned Vehicles Electrical and Computer Engineering Civil Environmental and Architectural Engineering

Electric, water, gas and transportation utilities face severe challenges associated with security, quality, availability, reliability and profitability issues. They must solve interrelated system problems with respect to generation of electricity, transportation of fuel, and potable as well as waste water. In the future, engineers and managers of utilities must be well versed in the different disciplines of engineering including electrical civil, mechanical and information technology. The University of Colorado at Boulder addresses this educational opportunity by proposing a novel Integrated Utilities Management program for M.S. candidates who have a solid B.S. background or equivalent in a related discipline. The M.S. program will consist of four interdisciplinary paths dealing with business management and legal topics as they relate to federal and state regulatory issues, as well as agency and people-related leadership issues. The electric utilities option of this program will be centered on three core courses related to electric power generation/transmission and distribution, security and availability, quality and reliability, economics and environmental policy, and utility finance;two elective courses from a group of courses that address nuclear power, waste water, solid waste, telecommunications, renewable energies, data communication, fuels and case studies;and one capstone course consisting of either operations research or the investigation and resolution of a pending utility project such as the right-of-way of transmission lines, specification of new power plants, retrofitting of power plants or their impact on the environment. It is expected that candidates for this MS program will come from universities, from utilities, and from private and public agencies. The MS program can be completed by full- or part time students within one or two years of intensive study, respectively. Courses will be taught both on campus and nationwide via the Center for Advanced

关键词： Public utilities

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Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

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IEEE Transactions on Nanotechnology 2024年 23卷 386-392页

作者： Kola, Sekhar Reddy Li, Yiming Butola, Rajat National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Department of Electronics and Electrical Engineering Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly;in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R2-score prove that the ANN model properly grasps information from the dataset successfully;thus, it can be used to model emerging CFETs for circuit simulation. © 2002-2012 IEEE.

关键词： Neural networks

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Performance Comparison of Differential and Non-Differential Synchronous Downlink MC-CDMA Systems with Random Spreading

Performance Comparison of Differential and Non-Differential ...

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第三届IEEE无线通讯、网络技术暨移动计算国际会议

作者： M. A. Mangoud M. Abou El-Nasr Heba A. Shaban Department of Computer Engineering Department of Electronics and Communications Arab Academy for Sci Bradley Department of Electrical and Computer Engineering (VT-MENA Program) - AAST Virginia Polytech

The BER performances of differential and nondifferential synchronous downlink multi-carrier code division multiple access (MC-CDMA) systems that employ random spreading are studied and compared using Standard Gaussian Approximation (SGA) in AWGN channel. Furthermore, Monte-Carlo simulations were carried out to compare the BER performances of these systems in AWGN and in frequency selective Rayleigh fading channels considering a various number of interferers in the system. Various modulation schemes were considered namely, BPSK, QPSK, OQPSK, DBPSK, and DQPSK modulation schemes.

关键词： Downlink Multicarrier code division multiple access Bit error rate Code standards Gaussian approximation AWGN channels Frequency Fading Binary phase shift keying Quadrature phase shift keying

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Ultrafast circuit protection for unmanned systems

Ultrafast circuit protection for unmanned systems

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2019 International Conference on communications, Information System, and computer engineering, CISCE 2019

作者： Kao, Chih-Hong Huang, Sy-Ruen He, Bo-Rong Lin, Hsiung-Cheng School of Computer Science Minnan Normal University Lab of Granular Computing ZhangZhou Fujjan China Department of Electrical Engineering Feng Chia University Taichung Taiwan Ph.D. Program of Electrical and Communications Engineering Feng Chia University Taichung Taiwan Department of Electrical Engineering Chin-Yi University of Technology Taichung Taiwan

ISBN: (纸本)9781728136813

With increasing dependence on precision electronic equipment, self-protection is becoming essential. The protection circuits commonly used before were fuses and circuit breakers which, however, they are not enough for the current need of high-speed protection circuits and automated engineering logic. In this paper, we develop a new ultrahigh-speed protection circuit, which is over exceeded 20 times faster than traditional circuits and has the ability to self-recover when any failure occurs. With the new circuit developed, it is not necessary to do manual restart and will meet the future needs of protection for electronic precision equipment. This design provides greater convenience and reliability for the unmanned equipment for the future. © 2019 IEEE.

关键词： Timing circuits

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Speech Act Classification Based on Individual Statistical Models in a Multi-Domain

Speech Act Classification Based on Individual Statistical Mo...

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IEEE International Workshop on Robot and Human Communication (ROMAN)

作者： Sangwoo kang Donghyun Kim Harksoo Kim Jungyun Seo Department of Computer Science Sogang University South Korea Program of Computer & Communications Engineering Kangwon National University South Korea Department of Computer Science & Interdisciplinary Program of Integrated BioTechnology Sogang University South Korea

Speech act classification is an essential part of a dialogue system because it is very important to catch user's intention. The previous approaches on speech act classification were focused on obtaining high performances in a single-domain, but they did not deal with a feature interference problem that frequently rises in a multi-domain. In this paper, we propose a two-step system for speech act classification in a multi-domain. In a first step, the proposed system detects a dialogue domain associated with user's utterance. In the second step, the proposed system determines the speech act of his/her utterance based on the statistical information of the detected domain. Owing to this architecture, the proposed system show ed higher precision of 5.5% than the baseline system based on the mixed statistical information.

关键词： Speech processing Electronic mail Statistical analysis computer science Interference Feature extraction Human robot interaction Biotechnology Entropy Hidden Markov models

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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