检索结果-内蒙古大学图书馆

International Conference on Advanced Communication Technology (ICACT)

作者： Sung-In Jung Cheol-Hoon Lee Computer System Division Electronics and Telecommunications Research Institute Daejeon South Korea Parallel Processing Laboratory Department of Computer Engineering Chungnam National University Daejeon South Korea

ISBN: (纸本)8955191197

Due to the explosive growth of the Internet, stream services are becoming more popular. The large media servers supporting thousands of concurrent media streams have to satisfy us with both good throughout and high availability. Although they are reciprocal from the viewpoint of system performance, the stream service continuity, as well as throughput, should be considered in clustered media servers. This is because media stream services should be continuously available to the clients even on the event of system failure. In this paper, we introduce service availability as the gauge of service degree on media servers, and present the basic scheme for guaranteeing continuous stream service. To do this, we propose LSS(Log Stream Status) and RRD(Ready Resource for instant Delivery) mechanisms. They are classified according to the status management method of stream service and the resumption method of closed service. Although these mechanisms require additional overhead, we found that they can be applied to clustered media servers with minimum overhead. Additionally, we concluded that they can provide higher quality of service availability on traditional clustered media servers.

关键词： Availability Streaming media Web server Concurrent computing Telecommunication computing Quality of service Network servers Monitoring Parallel processing Laboratories

来源：评论

学校读者我要写书评

暂无评论

A system for the measurement of the starting instant of impulsive transients [power systems]

A system for the measurement of the starting instant of impu...

引用

IEEE Instrumentation and Measurement Technology Conference

作者： L. Peretto P. Rinaldi R. Sasdelli R. Tinarelli Department of Electrical Engineering Alma Mater Studiorum Università di Bologna Bologna Italy Department of Electronics Computer and System Engineering Alma Mater Studiorum Università di Bologna Bologna Italy

There is a search for investigation techniques capable of characterizing voltage transients, which are one of the main causes of power quality degradation, and classifying them depending on their origin. In a previous paper, the use of a distributed measurement system for power quality monitoring in parallel with a lightning location system was proposed to assess whether a lightning event is responsible for a voltage transient. An accurate estimate of the transient's starting instant is required to tackle that task. In this paper, a system for the measurement of the starting instant of impulsive voltage transients is proposed and the procedures for its metrological characterization are described. The results of the characterization tests are also reported and discussed.

关键词： Monitoring Lightning Voltage Degradation Global Positioning system Uncertainty systems engineering and theory Testing Power quality Capacitors

来源：评论

学校读者我要写书评

暂无评论

High performance metal-gate/high-/spl kappa/ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology

High performance metal-gate/high-/spl kappa/ MOSFETs and GaA...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： A. Chin H.L. Kao D.S. Yu C.C. Liao C. Zhu M.F. Li Shiyang Zhu Dim-Lee Kwong Nano Science Technology Centre Electronics Engineering Department National Chiao Tung Univ University System of Taiwan Hsinchu Taiwan Si Nano Device Laboratory Department of Electrical & Computer Engineering National University of Singapore Singapore Department of Electrical & Computer Engineering University of Technology Austin TX USA

We propose and demonstrate a new VLSI structure using high performance metal-gate/high-K MOSFETs and high-Q RF passive devices on Ge-on-insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO/sub 3//GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction high-K crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500/spl deg/ C RTA.

关键词： MOSFETs Gallium arsenide Radio frequency High K dielectric materials High-K gate dielectrics Very large scale integration Insulation Ion implantation Charge carrier processes Electron mobility

来源：评论

学校读者我要写书评

暂无评论

Resonant excitation of plasma oscillations in a two-dimensional electron layer via diffraction of the electromagnetic wave on a perfectly conductive gate electrode

Resonant excitation of plasma oscillations in a two-dimensio...

引用

International Conference on Mathematical Methods in Electromagnetic Theory (MMET)

作者： V.V. Popov O.V. Polischuk M.S. Shur Institute of Radio Engineering and Electronics Saratov Division Russian Academy of Science Saratov Russia Department of Electrical Computer and System Engineering and RPUIBM Broadband Data Transfer Rensselaer Polytechnic Institute Troy NY USA

In this paper, we solve the problem of excitation of plasma oscillations in 2D electron layer selfconsistently using the full system of the Maxwell equations. We formulate this problem as the problem of diffraction of... 详细信息

关键词： Resonance Plasma waves Electrons Electromagnetic diffraction Electromagnetic scattering Electrodes Fourier transforms Slabs Maxwell equations Radiation detectors

来源：评论

学校读者我要写书评

暂无评论

Study to secure reliability of measurement data through application of game theory

Study to secure reliability of measurement data through appl...

引用

EUROMICRO Conference

作者： Sang-Pok Ko Hak-Kyung Sung Kyung-Whan Lee Institute of Intelligent System Mechatronics Center Samsung Electronics Company Limited Suwon Gyeonggi South Korea Department of Computer Science and Engineering Chung-Ang University Seoul South Korea

Recently, many corporations have applied CMM, SPICE or other software process maturity models to developing software products. These models are recommended to change from qualitative process management to quantitative management as they reach a certain level of maturity. Quantitative process management is possible only when reliable data exist. If quantitative process management are conducted when data’s reliability are not ensured, adverse effects can be caused by the false management activities. That is why so many methods have been studied to analyze reliability of collected data. Most of them, however, are analysis methods for already collected data. Therefore, if the analysis finds that the existing data are not reliable, the data should be abandoned and new data be collected again, causing need to consume much time and effort. Therefore, as a way to secure reliability of data to be used for quantitative process management when they are input in the first place, this paper suggests a method applying the second level meta game of non-cooperative, bimatrix games to collecting data for quantitative measurement.

关键词： Reliability theory Game theory Quality management Software measurement Coordinate measuring machines SPICE Software engineering Reliability engineering Software quality Application software

来源：评论

学校读者我要写书评

暂无评论

An input current ripple reduction converter (ICRRC) with full-bridge configuration for off-line high-power applications

An input current ripple reduction converter (ICRRC) with ful...

引用

Annual IEEE Conference on Applied Power electronics Conference and Exposition (APEC)

作者： C.-S. Leu F.C. Lee J.H. Liang Center for Power Electronics System The Bradley Department of Electrical and Computer Engineering Virginia Polytechnic Institute and State University Blacksburg VA USA Skynet Electronic Company Limited Taipei Taiwan

Employing the transformer leakage inductance, one cross-coupled capacitor, and four switches, an Input Current Ripple Reduction Converter (ICRRC) with Full-Bridge configuration for off-line high power applications is proposed. By adding two extra diodes, it provides input current ripple reduction, voltage-clamped and voltage-sharing functions. Consequently, continuous input current, low voltage stress and high efficiency performance can be achieved. In this paper, the circuit operation is illustrated and an experimental circuit of a 100 kHz, 15 V/20 A is described.

关键词： Circuits Capacitors Switches Power harmonic filters Power transformers Inductance Space vector pulse width modulation Pulse modulation Switching loss Application software

来源：评论

学校读者我要写书评

暂无评论

A /spl Sigma/-/spl Delta/ fractional-N frequency synthesizer using a wide-band integrated VCO and a fast AFC technique for GSM/GPRS/WCDMA applications

引用

IEEE Journal of Solid-State Circuits 2004年第7期39卷 1164-1169页

作者： Han-il Lee Je-Kwang Cho Kun-Seok Lee In-Chul Hwang Tae-Won Ahn Kyung-Suc Nah Byeong-Ha Park HINET Research Group Department of Electrical and Computer Engineering Purdue University West Lafayette IN USA RF/Analog PT System LSI Division Samsung Electronics Limited Kyunggi South Korea Dongyang Technical College Seoul South Korea

A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate in a wide-band frequency range, a switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive frequency calibration (AFC) technique are used. The measured VCO tuning range is as wide as 600 MHz (40%) from 1.15 to 1.75 GHz with a tuning sensitivity from 5.2 to 17.5 MHz/V. A 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz as well as agile switching time. The experimental results show -80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and -129 dBc/Hz out-of-band phase noise at 400-kHz offset frequency. The fractional spurious is less than -70 dBc/Hz at 300-kHz offset frequency and the reference spur is -75 dBc/Hz. The lock time is less than 150 /spl mu/s. The proposed synthesizer consumes 19.5 mA from a single 2.8-V supply voltage and meets the requirements of GSM/GPRS/WCDMA applications.

关键词： Frequency synthesizers Wideband Voltage-controlled oscillators Automatic frequency control GSM Ground penetrating radar Multiaccess communication Phase noise Tuning Silicon germanium

来源：评论

学校读者我要写书评

暂无评论

Rough set based features ensemble learning

Rough set based features ensemble learning

引用

World Congress on Intelligent Control and Automation (WCICA)

作者： Wang Quande Wang Xianjia Huang Hao School of Electronics Information Wuhan University of China Wuhan China Institute of System Engineering Wuhan University of China Wuhan China Department of Computer Science and Technology Beijing Institute of Technology Beijing China

ISBN: (纸本)0780382730

The minimal reduct of features in the Rough Set theory is a criterion to select the best feature subset based on it's ability to discriminate objects. In this paper, a multi-class features ensemble learning algorithm based on feature reduct is presented. The algorithm maintains a weight distribution in train set, which is used to compute minimal approximate reduct of features in each iteration of algorithm. Weak classifiers are constructed from the minimal approximate reduct and the weight distribution is updated according to examples in the train set which have been misclassified. The ensemble classifier are constructed by weighted votes of all weak classifiers. The results of testing in several dataset show that the algorithm has high accuracy of prediction and strong ability of generalization.

关键词： computer science Set theory Voting Testing Accuracy Machine learning algorithms systems engineering and theory Encoding Data mining Machine learning

来源：评论

学校读者我要写书评

暂无评论

A novel program-erasable high-k AlN capacitor with memory function

A novel program-erasable high-k AlN capacitor with memory fu...

引用

Non-Volatile Memory Technology Symposium

作者： A. Chin C.H. Lai B.F. Hung C.F. Cheng S.P. McAlister Chunxiang Zhu Ming-Fu Li Dim-Lee Kwong Department of Electronics Engineering Nano Science Technology Center Univ System of Taiwan National Chiao Tung University Hsinchu Taiwan Silicon Nano Devices Laboratory Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore Institute for Microstructural Sciences National Research Council Canada Ottawa Canada Department of Electrical & Computer Engineering University of Technology Austin TX USA

We demonstrate, for the first time, a novel high-k AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al/sub 2/O/sub 3/, or other capacitors that use only a single high-k dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after /spl plusmn/4V program/erase for 10/sup 4/sec.

关键词： High K dielectric materials High-K gate dielectrics Capacitors Nonvolatile memory Random access memory Threshold voltage Electron traps MONOS devices SONOS devices CMOS technology

来源：评论

学校读者我要写书评

暂无评论

3D GOI CMOSFETs with novel IrO/sub 2/(Hf) dual gates and high-k dielectric on 1P6M-0.18 /spl mu/m-CMOS

3D GOI CMOSFETs with novel IrO/sub 2/(Hf) dual gates and hig...

引用

International Electron Devices Meeting (IEDM)

作者： D.S. Yu A. Chin C.C. Laio C.F. Lee C.F. Cheng W.J. Chen C. Zhu M.-F. Li W.J. Yoo S.P. McAlister D.L. Kwong Nano Science Technology Ctr. Department of Electronics Engineering National Chiao Tung University University System of Taiwan Hsinchu Taiwan Dept. of Electronics Eng. Univ. System of Taiwan Hsinchu Taiwan ROC Silicon Nano Devices Laboratory Department of Electrical and Computer Engineering National University of Singapore Singapore Dept. of Electrical and Computer Engineering UST Hsinchu Taiwan ROC Graduate inst. of Materials Eng. National Pingtung University of Science and Technology Pingtung Taiwan Taiwan National Research Council of Canada Ottawa Canada Department of Electrical & Computer Engineering University of Technology Austin TX USA Dept. of Electrical & Computer Engineering The Univ. of Texas Austin TX USA

For the first time, we demonstrate 3D integration of self-aligned IrO/sub 2/(Hf)/LaAlO/sub 3//GOI CMOSFETs above 0.18 /spl mu/m Si CMOSFETs. At EOT=1.4nm, the novel IrO/sub 2/(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO/sub 3//Si devices have high electron and hole mobilities of 203 and 67 cm/sup 2//Vs. On the 3D structure the LaAlO/sub 3// GOI shows even higher 389 and 234 cm/sup 2//Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation.

关键词： CMOSFETs High-K gate dielectrics Energy consumption MOSFETs Charge carrier processes Electron mobility Integrated circuit interconnections Very large scale integration Cost function Rapid thermal processing

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：