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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Lee, Yu-Chun Kola, Sekhar Reddy Chen, Chieh-Yang Chuang, Min-Hui Li, Yiming Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering Institute of Communications Engineering Eecs International Graduate Program Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. The scope of the work is to boost the performance and high-energy efficiency of the studied NC-MOSFETs by using the ferro electric material (FE). The NC-MOSFETs with the spacer technology can achieve the admirable Ion/Ioff ratio and subthreshold swing (SS), compared with planar MOSFETs. It makes device scaling possible by eliminating the short channel effect (SCE). We further estimated the effect of FE thickness and spacer, which are another critical parameter of obtaining better electrical characteristics and reducing SS. © 2020 IEEE.

关键词： Capacitance

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Multi Inteligent Traffic Light Optimization techniques by appling Modified Component Analysis Algorithm 5

Multi Inteligent Traffic Light Optimization techniques by ap...

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5th IEEE International Conference on Science, Technology, Engineering and Mathematics, ICONSTEM 2019

作者： Ellappan, V. Sindhusaranya, B. Hailu, Tadesse Electronics Communication Eng. Program School of Electrical Engineering Computing Adama Science and Technology University Adama Ethiopia Namakkal India

ISBN: (纸本)9781728115993

Large cities situated within the developing countries facing one of the most important problems are heavy traffic congestion. It happened because of fast urbanization n. Many modern infrastructures for constructing a traffic signal have been introduced. Due to high maintenance cost and less knowledge of local workers that infrastructure doesn't work well. In this paper, we proposed a new technique for signal control framework, which estimates the traffic flows using the image analysis. For this technique inexpensive Web cameras are required for supporting signal control strategy which is based on traffic volume on that particular time. Traffic volumes can be estimated with few observation points. Based on that, signal controls can be adjusted. Numerical experiments of this proposed work confirmed that average travel time is reduced to 20.6% while comparing to the fixed-time signal control. © 2019 IEEE.

关键词： Traffic congestion

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Does singing a low-pitch tone make you look angrier? 14

Does singing a low-pitch tone make you look angrier?

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14th Sound and Music computing Conference, SMC 2017

作者： Ahrendt, Peter Bach, Christian C. Dahl, Sofia Aalborg University Master Program in Sound and Music Computing Denmark Aalborg University Copenhagen Department of Architecture Design and Media Technology Denmark

ISBN: (纸本)9789526037295

While many studies have shown that auditory and visual information influence each other, the link between some intermodal associations are less clear. We here replicate and extend an earlier experiment with ratings of pictures of people singing high and low-pitched tones. To this aim, we video recorded 19 participants singing high and low pitches and combined these into picture pairs. In a two-alternative forced choice test, two groups of six assessors were then asked to view the 19 picture pairs and select the "friendlier", and "angrier" expression respectively. The result is that assessors chose the high-pitch picture when they were asked to rate "friendlier" expression. Asking about "angrier" expression resulted in choosing the low-pitch picture. A non significant positive correlation between sung pitch ranges from every participant to the number of chosen high-pitch resp. low-pitch pictures was found. © 2017 Peter Ahrendt et al. This is an open-access article distributed under the terms of the Creative Commons Attribution 3.0 Unported License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

关键词： Computer programming

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Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Intrinsic Parameter Fluctuation and Process Variation Effect...

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IEEE International Symposium on Quality Electronic Design

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T Nch /T Pch ), the channel width (W ch ), and the gate length (L G ) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

关键词： Fluctuations Gallium arsenide Logic gates Electric variables Silicon Resource description framework Semiconductor process modeling

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Heterogeneous Oblique Double Random Forest

arXiv

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arXiv 2023年

作者： Ganaie, M.A. Tanveer, M. Beheshti, I. Ahmad, N. Suganthan, P.N. Department of Robotics University of Michigan Ann ArborMI United States Department of Mathematics Indian Institute of Technology Indore Simrol Indore453552 India Department of Human Anatomy and Cell Science Rady Faculty of Health Sciences Max Rady College of Medicine University of Manitoba WinnipegMB Canada Department of International Program of Electrical Engineering and Computer Science National Taipei University of Technology Taipei Taiwan KINDI Center for Computing Research College of Engineering Qatar University Doha Qatar

The decision tree ensembles use a single data feature at each node for splitting the data. However, splitting in this manner may fail to capture the geometric properties of the data. Thus, oblique decision trees generate the oblique hyperplane for splitting the data at each non-leaf node. Oblique decision trees capture the geometric properties of the data and hence, show better generalization. The performance of the oblique decision trees depends on the way oblique hyperplanes are generate and the data used for the generation of those hyperplanes. Recently, multiple classifiers have been used in a heterogeneous random forest (RaF) classifier, however, it fails to generate the trees of proper depth. Moreover, double RaF studies highlighted that larger trees can be generated via bootstrapping the data at each non-leaf node and splitting the original data instead of the bootstrapped data recently. The study of heterogeneous RaF lacks the generation of larger trees while as the double RaF based model fails to take over the geometric characteristics of the data. To address these shortcomings, we propose heterogeneous oblique double RaF. The proposed model employs several linear classifiers at each non-leaf node on the bootstrapped data and splits the original data based on the optimal linear classifier. The optimal hyperplane corresponds to the models based on the optimized impurity criterion. The experimental analysis indicates that the performance of the introduced heterogeneous double random forest is comparatively better than the baseline models. To demonstrate the effectiveness of the proposed heterogeneous double random forest, we used it for the diagnosis of Schizophrenia disease. The proposed model predicted the disease more accurately compared to the baseline models. © 2023, CC BY-NC-ND.

关键词： Decision trees

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Improving dynamic collision frequencies: impacts on dynamic structure factors and stopping powers in warm dense matter

arXiv

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arXiv 2023年

作者： Hentschel, Thomas W. Kononov, Alina Olmstead, Alexandra Cangi, Attila Baczewski, Andrew D. Hansen, Stephanie B. School of Applied & Engineering Physics Cornell University IthacaNY United States Center for Computing Research Sandia National Laboratories AlbuquerqueNM United States Nanoscience and Microsystems Engineering Program University of New Mexico AlbuquerqueNM United States Center for Advanced Systems Understanding Helmholtz-Zentrum Dresden-Rossendorf Görlitz Germany Department of Physics and Astronomy University of New Mexico AlbuquerqueNM United States Pulsed Power Sciences Center Sandia National Laboratories AlbuquerqueNM United States

Simulations and diagnostics of high-energy-density plasmas and warm dense matter rely on models of material response properties, both static and dynamic (frequency-dependent). Here, we systematically investigate variations in dynamic electron-ion collision frequencies ν(ω) in warm dense matter using data from a self-consistent-field average-atom model. We show that including the full quantum density of states, strong collisions, and inelastic collisions lead to significant changes in ν(ω). These changes result in red shifts and broadening of the plasmon peak in the dynamic structure factor, an effect observable in x-ray Thomson scattering spectra, and modify stopping powers around the Bragg peak. These changes improve the agreement of computationally efficient average-atom models with first-principles time-dependent density functional theory in warm dense aluminum, carbon, and deuterium. © 2023, CC BY.

关键词： Quantum theory

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A Novel Design of Ferroelectric Nanowire Tunnel Field Effect Transistors

A Novel Design of Ferroelectric Nanowire Tunnel Field Effect...

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International Symposium on VLSI Technology, Systems and Applications

作者： Narasimhulu Thoti Yiming Li Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu Taiwan EECS International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Parallel and Scientific Computing Laboratory National Chiao Tung University Hsinchu Taiwan EECS International Graduate Program National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan National Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Chiao Tung University Hsinchu Taiwan

We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.

关键词： Semiconductor device modeling TFETs Tunneling Very large scale integration Ions Silicon Transistors

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Optimizing the Montgomery Modular Multiplier for a Power- and Area-Efficient Hardware Architecture

Optimizing the Montgomery Modular Multiplier for a Power- an...

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Midwest Symposium on Circuits and Systems (MWSCAS)

作者： Mateus Terribele Leme Guilherme Paim Leandro M. G Rocha Patricia Ücker Vitor G. Lima Rafael Soares Eduardo A. C. da Costa Sergio Bampi Graduate Program in Microelectronics (PGMICRO) Federal University of Rio Grande do Sul (UFRGS) Porto Alegre Graduate Program on Electronic Engineering and Computing Catholic University of Pelotas (UCPel) Pelotas Graduate Program on Computer Science (PPGC) Federal University of Pelotas (UFPel)

ISBN: (数字)9781728180588

ISBN: (纸本)9781728180595

Cryptography hardware design is a key challenge towards the confidentiality advance in the prominent field of the internet of things (IoT). The rise of IoT embedded devices boosts the demand for power- and area- efficient solutions for cryptography hardware. The higher the robustness of the cryptography algorithm is, the higher are the hardware complexity, the circuit area, and energy consumption. Asymmetric algorithms are a particular class widely employed in ultra-secure cryptosystems. The high time-hardness to break the private-key in asymmetric algorithms is a result of its high mathematical complexity. RSA is an asymmetric algorithm that performs successive modular multiplications to encrypt and de-encrypt the information. Therefore, arithmetic operators are the most significant part regarding circuit area and power dissipation. This work evaluates a design space exploration for power- and area-efficient hardware VLSI design in the modular Montgomery multiplier employed in the RSA algorithm.

关键词： Hardware Computer architecture Adders Power dissipation Public key Very large scale integration

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Tutorial on communication between access networks and the 5G core

arXiv

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arXiv 2021年

作者： Baleeiro Dominato, Lucas Carvalho de Resende, Henrique Both, Cristiano Bonato Marquez-Barja, Johann M. Silvestre, Bruno O. Cardoso, Kleber V. Universidade Federal de Goiás GO Goiânia Brazil IDLab Department of Applied Engineering University of Antwerp IMEC Antwerp Belgium Applied Computing Graduate Program University of Vale do Rio dos Sinos RS Porto Alegre Brazil

Fifth-generation (5G) networks enable a variety of use cases, e.g., Ultra-Reliable and Low-Latency Communications, enhanced Mobile Broadband, and massive Machine Type Communication. To explore the full potential of these use cases, it is mandatory to understand the communication between User Equipment (UE), Radio Access Network (RAN), and 5G Core (5GC), which support new network concepts and paradigms. For example, network slicing plays a crucial role in the communication system to address the challenges expected by the 5G networks. 3rd Generation Partnership Project has recently published Release 16, including the protocols used to communicate between RANs and 5GC, i.e., Non-Access Stratum (NAS) and NG Application Protocol (NGAP). The main goal of this article is to present a comprehensive tutorial about NAS and NGAP specifications using a didactic and practical approach. The tutorial describes the protocol stacks and aspects of the functionality of these protocols in 5G networks, such as authentication and identification procedures, data session establishment, and allocation of resources. Moreover, we review message flows related to these protocols in UE and Next Generation Node B (gNodeB) registration. To illustrate the concepts presented in the tutorial, we introduce a 5GC tester that implements NAS and NGAP for availing of three open-source 5GC projects on a black-box testing methodology. © 2021, CC BY.

关键词： 5G mobile communication systems

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Correction: A meta-classification-based approach for outlier identification in GNSS networks

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GPS Solutions 2025年第2期29卷 1-1页

作者： Suraci, Stefano Sampaio de Oliveira, Leonardo Castro Klein, Ivandro Goldschmidt, Ronaldo Ribeiro Rofatto, Vinicius Francisco Defense Engineering Department Military Institute of Engineering Leonardo Castro de Oliveira Rio de Janeiro Brazil Defense Engineering Program Military Institute of Engineering Rio de Janeiro Brazil Graduate Program in Geodetic Sciences Federal University of Paraná Curitiba Brazil Dept. of Civil Construction Federal Institute of Santa Catarina Florianopolis Brazil Systems and Computing Program Military Institute of Engineering Rio de Janeiro Brazil Institute of Geography Federal University of Uberlândia Monte Carmelo Brazil

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