We investigated the possibility of applying an ALD method to form a Cu diffusion barrier layer of MnO_x in an attempt to develop a deposition process which would not be influenced by absorbed water in a substrate. The...
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ISBN:
(纸本)9781479904372
We investigated the possibility of applying an ALD method to form a Cu diffusion barrier layer of MnO_x in an attempt to develop a deposition process which would not be influenced by absorbed water in a substrate. The MnO_x formed by ALD using (EtCp)_2Mn and H_2O had the following features. (1) Capability of thickness control of the MnO_x layer by changing the ALD cycle number. (2) Capability of the ALD-MnO_x formation on low-k dielectrics by surface modification. (3) Good adhesion of the Cu/ALD-MnO_x/SiOCH structure showing a fracture toughness of 0.3 MPa?m~(1/2). (4) Good diffusion barrier property for the thickness of over 1 nm. (5) Minimizing via resistance increase accompanied by the formation of MnO_x on Cu.
A novel backend process is developed for thecylindrical Ru/TaO/Ru capacitor for 130nm generationdrams to achieve good electrical *** gas（3%H/97%N）anneal（FGA） induceddegradation can be effectively *** thecylindrica...
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A novel backend process is developed for thecylindrical Ru/TaO/Ru capacitor for 130nm generationdrams to achieve good electrical *** gas（3%H/97%N）anneal（FGA） induceddegradation can be effectively *** thecylindrical Ru/TaO/Ru capacitor with full backendprocesses,including passivation layer formation and aFGA,the cell leakage current and cell capacitance are1fA（at±0.8V at 85℃）and 15fF,respectively.
We have developed a cylindrical Ru/ST/Ru capacitor for gigabit-scale drams. Using cylindrical CVD-Ru as a storage node (SN), a new 2-step CVD-ST was employed to improve ST step coverage, surface morphology and to cont...
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ISBN:
(纸本)4891140127
We have developed a cylindrical Ru/ST/Ru capacitor for gigabit-scale drams. Using cylindrical CVD-Ru as a storage node (SN), a new 2-step CVD-ST was employed to improve ST step coverage, surface morphology and to control composition at the Ru/ST interface. A SiO/sub 2/ equivalent thickness (t/sub eq/) of 0.6 nm and cell capacitance of 18 fF/cell with leakage current of 0.1 fA/cell at /spl plusmn/0.7 V applied voltage has been achieved on a 256K cylindrical Ru/ST/Ru capacitor array.
A novel backend process is developed for the cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor for 130 nm generation drams to achieve good electrical characteristics. Forming gas (3%H/sub 2//97%N/sub 2/) anneal (FGA) indu...
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ISBN:
(纸本)0780365208
A novel backend process is developed for the cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor for 130 nm generation drams to achieve good electrical characteristics. Forming gas (3%H/sub 2//97%N/sub 2/) anneal (FGA) induced degradation can be effectively suppressed. For the cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor with full backend processes, including passivation layer formation and a FGA, the cell leakage current and cell capacitance are 1 fA (at /spl plusmn/0.8 V at 85/spl deg/C) and 15fF, respectively.
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