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From light sensing to adaptive learning:hafnium diselenide reconfigurable memcapacitive devices in neuromorphic computing

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Light(science & Applications) 2025年第1期14卷 215-226页

作者： Bashayr Alqahtani Hanrui Li Abdul Momin Syed Nazek El-Atab Electrical and Computer Engineering Program Computer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)ThuwalSaudi Arabia Electrical Engineering Department College of EngineeringPrincess Nourah Bint Abdulrahman University(PNU)RiyadhSaudi Arabia

Advancements in neuromorphic computing have given an impetus to the development of systems with adaptive behavior,dynamic responses,and energy efficiency *** charge-based or emerging memory technologies such as memristors have been developed to emulate synaptic plasticity,replicating the key functionality of neurons—integrating diverse presynaptic inputs to fire electrical impulses—has remained *** this study,we developed reconfigurable metal-oxide-semiconductor capacitors(MOSCaps)based on hafnium diselenide(HfSe2).The proposed devices exhibit(1)optoelectronic synaptic features and perform separate stimulus-associated learning,indicating considerable adaptive neuron emulation,(2)dual light-enabled charge-trapping and memcapacitive behavior within the same MOSCap device,whose threshold voltage and capacitance vary based on the light intensity across the visible spectrum,(3)memcapacitor volatility tuning based on the biasing conditions,enabling the transition from volatile light sensing to non-volatile optical data *** reconfigurability and multifunctionality of MOSCap were used to integrate the device into a leaky integrate-and-fire neuron model within a spiking neural network to dynamically adjust firing patterns based on light stimuli and detect exoplanets through variations in light intensity.

关键词： integrate volatile integrating

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Artificial visual perception neural system using a solution-processable MoS_(2)-based in-memory light sensor

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Light(science & Applications) 2023年第8期12卷 1583-1594页

作者： Dayanand Kumar Lana Joharji Hanrui Li Ayman Rezk Ammar Nayfeh Nazek El-Atab Smart Advanced Memory Devices and Applications(SAMA)LaboratoryElectrical and Computer Engineering ProgramComputer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955Kingdom of Saudi Arabia Department of Electrical Engineering and Computer Science Khalifa UniversityAbu Dhabi 127788United Arab Emirates

Optoelectronic devices are advantageous in in-memory light sensing for visual information processing,recognition,and storage in an energy-efficient ***,in-memory light sensors have been proposed to improve the energy,area,and time efficiencies of neuromorphic computing *** study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS2 metal-oxide-semiconductor(MOS)charge-trapping memory structure—the basic structure for charge-coupled devices(CCD)—and showing its suitability for in-memory light sensing and artificial visual *** memory window of the device increased from 2.8 V to more than 6V when the device was irradiated with optical lights of different wavelengths during the program ***,the charge retention capability of the device at a high temperature(100 ℃)was enhanced from 36 to 64%when exposed to a light wavelength of 400 *** larger shift in the threshold voltage with an increasing operating voltage confirmed that more charges were trapped at the Al_(2)O_(3)/MoS_(2) interface and in the MoS_(2) layer.A small convolutional neural network was proposed to measure the optical sensing and electrical programming abilities of the *** array simulation received optical images transmitted using a blue light wavelength and performed inference computation to process and recognize the images with 91%*** study is a significant step toward the development of optoelectronic MOS memory devices for neuromorphic visual perception,adaptive parallel processing networks for in-memory light sensing,and smart CCD cameras with artificial visual perception capabilities.

关键词： visual neural process

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ESG Investing: A Statistically Valid Approach to Data-Driven Decision Making and the Impact of ESG Factors on Stock Returns and Risk

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IEEE Access 2024年 12卷 69434-69444页

作者： Teja, Kamurthi Ravi Liu, Chuan-Ming National Taipei University of Technology International Program of Electrical Engineering and Computer Science Taipei10608 Taiwan National Taipei University of Technology Department of Computer Science and Information Engineering Taipei10608 Taiwan

This study examines the impact of environmental, social, and governance (ESG) factors on economic investment from a statistical perspective, aiming to develop a tested investment strategy that capitalizes on the connection between ESG factors and financial performance. ESG investing: A statistically valid approach to data-driven decision-making (ESGI-SVADDM) investment strategy is based on a rigorous, statistically valid approach that utilizes data, math, statistics, and data science libraries to drive investment decisions, eliminating the need for personal opinions and subjectivity. The process includes establishing an investment thesis, formulating testable hypotheses (HPS), retrieving and refining relevant data, calculating relevant measures, and testing and validating all hypotheses. The study uses S&P 500 stock data and ESG data from Sustainalytics to test the hypotheses. The empirical tests conducted revealed a negative correlation between ESG risk and expected returns, as well as a positive trend in the relationship between ESG risk and the overall risk of stocks. Moreover, the study found that higher ESG risk scores are associated with lower returns for investors, and that adopting a strategy of investing in stocks with low ESG risk and shorting stocks with high ESG risk yields superior returns compared to the market portfolio. © 2013 IEEE.

关键词： Investments

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Etching-free pixel definition in InGaN green micro-LEDs

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Light(science & Applications) 2024年第8期13卷 1655-1665页

作者： Zhiyuan Liu Yi Lu Haicheng Cao Glen Isaac Maciel Garcia Tingang Liu Xiao Tang Na Xiao Raul Aguileta Vazquez Mingtao Nong Xiaohang Li Advanced Semiconductor Laboratory Electrical and Computer Engineering ProgramCEMSE DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall *** near sidewall regions act as non-radiative recombination centers and paths for current leakage,significantly deteriorating device *** this study,we demonstrated a novel selective thermal oxidation(STO)method that allowed pixel definition without undergoing plasma damage and subsequent dielectric *** annealing in ambient air oxidized and reshaped the LED structure,such as p-layers and InGaN/GaN multiple quantum ***,the pixel areas beneath the pre-deposited SiO_(2)layer were selectively and effectively *** was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide,significantly reducing LED leakage ***,applying a thicker SiO_(2)protective layer minimized device resistance and boosted device efficiency *** the STO method,InGaN green micro-LED arrays with 50-,30-,and 10-μm pixel sizes were manufactured and *** results indicated that after 4 h of air annealing and with a 3.5-μm SiO_(2)protective layer,the 10-μm pixel array exhibited leakage currents density 1.2×10^(-6)A/cm^(2)at-10 V voltage and a peak on-wafer external quantum efficiency of~6.48%.This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device ***-LEDs fabricated through the STO method can be applied to micro-displays,visible light communication,and optical interconnect-based *** planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with ***,the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices,such as photodetectors,laser diodes,high-electron-mobility transistors

关键词： annealing protective quantum

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Recent advances in tip-enhanced Raman spectroscopy probe designs

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Nano Research 2023年第4期16卷 5555-5571页

作者： Da Xu Boqun Liang Yaodong Xu Ming Liu Department of Electrical and Computer Engineering University of California-RiversideRiversideCalifornia 92521USA Materials Science and Engineering program University of California-RiversideRiversideCalifornia 92521USA

Tip-enhanced Raman spectroscopy(TERS)imaging is a super-resolution imaging technique that features the merits of both surface-enhanced Raman spectroscopy(SERS)and scanning probe microscopy(SPM),such as the high chemical sensitivity from the former and the nanoscale spatial resolution from the *** advantages make TERS an essential nanospectroscopic characterization technique for chemical analysis,materials science,bio-sensing,*** probes,the most critical factor determining the TERS imaging quality,are expected to provide a highly confined electromagnetic hotspot with a minimized scattering background for the generation of Raman signals with high spatial *** two decades of development,numerous probe design concepts have been proposed and *** review provides a comprehensive overview of the state-of-the-art TERS probe designs,from the working mechanism to the practical *** start with reviewing the recent development of TERS configurations and the corresponding working mechanisms,including the SPM platforms,optical excitation/collection techniques,and probe preparation *** then review the emerging novel TERS probe designs,including the remote-excitation probes,the waveguide-based nanofocusing probes,the metal-coated nanofocusing probes,the nanowire-assisted selective-coupling probes,and the tapered metal-insulator-metal *** discussion focuses on a few critical aspects,including the surface-plasmon-polariton(SPP)hotspot excitation technique,conversion efficiency,working frequency,and *** the end,we review the latest TERS applications and give a perspective on the future of TERS.

关键词： tip-enhanced Raman spectroscopy plasmonics scanning probe microscopy nanoscale imaging nanophotonics nanofocusing

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Wide bandgap semiconductor-based integrated circuits

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Chip 2023年第4期2卷 105-132页

作者： Saravanan Yuvaraja Vishal Khandelwal Xiao Tang Xiaohang Li Advanced Semiconductor Laboratory(ASL) Electrical and Computer Engineering ProgramComputerElectrical and Mathematical Science&Engineering(CEMSE)DivisionKing Abdullah University of Science andTechnology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and *** examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and *** characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and *** semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic *** breakthroughs includevarious applications such as imaging,optical communication,*** them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low ***,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control *** monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a ***,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant *** article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs.

关键词： Wide bandgap semiconductors Integrated circuits Transistors Power electronics

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RUL Estimation for Power Electronic Devices Using RNNs

RUL Estimation for Power Electronic Devices Using RNNs

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2024 Prognostics and System Health Management Conference, PHM 2024

作者： Cai, Congrui Lu, Zhonghai School of Electrical Engineering and Computer Science KTH Royal Institute of Technology Embedded Systems Master Program Sweden School of Electrical Engineering and Computer Science Department of Electrical Engineering KTH Royal Institute of Technology Sweden

ISBN: (纸本)9798350360585

Recurrent Neural Networks (RNNs) are commonly used in data-driven approaches to estimate the Remaining Useful Lifetime (RUL) of power electronic devices. RNNs are preferred because their intrinsic feedback mechanisms are better suited to model time-series data. However, the impact of RNN complexity on estimation accuracy is rarely discussed in the literature. This issue is important because choosing a lower-complexity model that delivers the same or similar performance as a higher-complexity model can increase implementation efficiency. In the paper, we use three RNN models, namely, the vanilla version, LSTM (Long Short Term Memory) and GRU (Gated Recurrent Unit) to conduct RUL estimation for power electronic devices. We use two accelerated aging datasets, one dataset targeting the package failure of MOSFETs, and the other dataset targeting package failure of power diodes. Our study shows that a lower-complexity RNN does not necessarily deliver a lower performance. Similarly, a higher-complexity model does not assure a higher performance. As such, our work highlights the importance of selecting a proper neural network for RUL estimation not biased towards complex models. This is especially useful and important for implementing such RUL estimation techniques in embedded resource-constrained and speed-limited computins platforms. © 2024 IEEE.

关键词： Long short-term memory

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Constructing Semantical Structure by Segmentation Integrated Video Embedding for Temporal Action Detection

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IEEE Transactions on Circuits and Systems for Video Technology 2025年第6期35卷 5980-5992页

作者： Zhao, Zixuan Liu, Shuming Zhao, Chengze Zhao, Xu Shanghai Jiao Tong University School of Electronic Information and Electrical Engineering Shanghai200240 China King Abdullah University of Science and Technology Computer Science Program Thuwal23599 Saudi Arabia

Video embedding is the pivot in Temporal Action Detection (TAD). Once the video embedding can robustly capture the essence of actions and perceive activities in complex scenes, the TAD model can more accurately localize action boundaries. Currently, video embedding is typically based on rule-based pixel convolution or cube-based transformer, wherein structured semantic information is intertwined, leading to the submergence of crucial spatial semantic information, such as the intrinsic motion of key semantic objects and interactions among semantic objects. To address these limitations, it is imperative to explore alternative approaches. With the remarkable performance of general semantic segmentation models in visual representation, we introduce the general segmentation model SEEM into the video embedding paradigm, constructing a semantically structured representation from perceptual semantics to cognitive semantics. To more effectively utilize SEEM for structured video representation, we designed the Semantic Adapter (Sem-Adapter) as a bridge to connect the two models. Firstly, we design a Self-Motion Module (SMM) to pay attention to the self-motion of key semantic regions. Secondly, we propose a Mutual Relation Module (MRM) to construct the interactions between semantic regions. Extensive experiments on ActivityNet-1.3, THUMOS-14 and EPIC-Kitchens-100 reveal that our method significantly outperforms state-of-the-art methods under the same input modality, and our method improves the average mAP from 60.6% to 64.2% on THUMOS-14 with the same backbone. The code is available on https://***/shouxiaozixuan/semtad. © 1991-2012 IEEE.

关键词： Semantic Segmentation

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Compact Model Build Upon Dynamic Weighting Artificial Neural Network Approach for Complementary Field Effect Transistors

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IEEE Transactions on Electron Devices 2024年第1期71卷 246-253页

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation The Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program The Institute of Communications Engineering the Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

In this work, a dynamic weighting-artificial neural network (DW-ANN) methodology is presented for quick and automated compact model (CM) generation. It takes advantage of both TCAD simulations for high accuracy and SPICE simulations for cost-effectiveness. This methodology is developed for gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field effect transistor (CFET), a potential candidate for future CMOS technology due to its innate properties. The critical process variation (PV) sources that severely degrade the CFET performance are estimated using DW-ANN. It reduces the computation cost and predicts the effects of PV sources with less than 1% error. Furthermore, a compact DW-ANN-based Verilog-A model has been developed that captures the dc as well as transient behavior accurately for circuit-level analysis. CFET-based circuits such as inverter, 6T-static random access memory (SRAM), and ring oscillator (RO) are characterized and implemented using DW-ANN-based CM. The overall average error of the model is reported as less than 2%. Therefore, the proposed device and circuit modeling approach provides a feasible solution for the rapid compact modeling of new emerging devices with good convergence and high accuracy. © 1963-2012 IEEE.

关键词： Neural networks

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A ShuffleNet Architecture-Based Multi-Layer Feature Scaling and Fusion Approach for Underwater Net Cage Damage Detection in Aquaculture

A ShuffleNet Architecture-Based Multi-Layer Feature Scaling ...

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2024 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2024

作者： Huang, Xiang-Rui Chen, Yi-Cheng Chen, Liang-Bi Hu, Wu-Chih National Penghu University of Science and Technology Master Program in Electrical Engineering and Computer Science Department of Electrical Engineering Penghu Taiwan National Penghu University of Science and Technology Department of Computer Science and Information Engineering Penghu Taiwan

ISBN: (纸本)9798331530839

In offshore aquaculture operations, personnel equipped with diving gear are often necessary to inspect the underwater net cages for damage, particularly on the sea floor. This manual inspection process is time-consuming and complex. To overcome this problem, this paper proposes a computer vision solution for identifying damage in underwater net cages to address the inefficiencies and challenges of traditional manual inspections. The proposed scheme utilizes a high-performance multi-branch computational architecture designed based on ShuffleNet architecture to detect net cage damage more efficiently. Experimental results demonstrate that this work performs well on the ImageNet ILSVRC-2010 dataset and achieves an accuracy of 88.54% in underwater net damage detection. © 2024 IEEE.

关键词： Aquaculture

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