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Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Statistical Analysis of Intrinsic High-Frequency Characteris...

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Kazuhiko Endo Seiji Samukawa Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Institute of Communications Engineering Department of Electronics and Electrical Engineering Institute of Biomedical Engineering Center for mm Wave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Fluid Science Tohoku University 2-1-1 Katahira Aoba-ku Sendai Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan

In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed $(iid)$ assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

关键词： MOSFET Fluctuations Statistical analysis Gallium arsenide Cutoff frequency Metals Logic gates

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Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth

arXiv

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arXiv 2023年

作者： Myint, Peco Woodward, Jeffrey M. Wang, Chenyu Zhang, Xiaozhi Wiegart, Lutz Fluerasu, Andrei Headrick, Randall L. Eddy, Charles R. Ludwig, Karl F. Department of Physics Division of Materials Science and Engineering Boston University BostonMA United States Electronics Science and Technology Division U.S. Naval Research Laboratory WashingtonDC United States Department of Physics and Materials Science Program University of Vermont Burlington United States National Synchrotron Light Source II Brookhaven National Laboratory Upton United States

Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. XPCS examines the evolution of the coherent X-ray scattering speckle pattern, which is a fingerprint of the unique sample microstructure at each moment in time. In PE-ALD, ultrathin films are synthesized from repeated cycles of alternating self-limited surface reactions induced by temporally-separated pulses of material precursor and plasma reactant, allowing the influence of each on the evolving morphology to be examined. During the heteroepitaxial 3D growth examined here, sudden changes in surface structure during initial film growth, consistent with numerous overlapping stress-relief events, are observed. When the film becomes continuous, the nanoscale surface morphology abruptly becomes long-lived with correlation time spanning the period of the experiment. Throughout the growth experiment, there is a consistent repeating pattern of correlations associated with the cyclic growth process, which is modeled as transitions between different surface states. The plasma exposure does not simply freeze in a structure that is then built upon in subsequent cycles, but rather there is considerable surface evolution during all phases of the growth cycle. © 2023, CC BY.

关键词： Ultrathin films

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Simultaneous creation of multiple vortex-antivortex pairs in momentum space in photonic lattices

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Advanced Photonics 2023年第6期5卷 92-100页

作者： Feng Li Sergei V.Koniakhin Anton V.Nalitov Evgeniia Cherotchenko Dmitry D.Solnyshkov Guillaume Malpuech Min Xiao Yanpeng Zhang Zhaoyang Zhang Xi'an Jiaotong University Key Laboratory for Physical Electronics and Devices of the Ministry of EducationShaanxi Key Laboratory of Information Photonic TechniqueSchool of Electronic Science and EngineeringFaculty of Electronics and InformationXi’anChina Institute for Basic Science Center for Theoretical Physics of Complex SystemsDaejeonRepublic of Korea Korea University of Science and Technology(UST) Basic Science ProgramDaejeonRepublic of Korea Moscow Institute of Physics and Technology DolgoprudnyiRussia University of Wolverhampton Faculty of Science and EngineeringWolverhamptonUnited Kingdom ITMO University St.PetersburgRussia Ioffe Institute St.PetersburgRussia UniversitéClermont Auvergne Institut PascalPHOTON-N2CNRSClermont INPClermont-FerrandFrance Institut Universitaire de France ParisFrance University of Arkansas Department of PhysicsFayettevilleArkansasUnited States Nanjing University School of PhysicsNational Laboratory of Solid State MicrostructuresNanjingChina

engineering of the orbital angular momentum(OAM)of light due to interaction with photonic lattices reveals rich physics and motivates potential *** report the experimental creation of regularly distributed quantized vortex arrays in momentum space by probing the honeycomb and hexagonal photonic lattices with a single focused Gaussian *** the honeycomb lattice,the vortices are associated with Dirac ***,we show that the resulting spatial patterns of vortices are strongly defined by the symmetry of the wave packet evolving in the photonic lattices and not by their topological *** findings reveal the underlying physics by connecting the symmetry and OAM conversion and provide a simple and efficient method to create regularly distributed multiple vortices from unstructured light.

关键词： vortex photonic lattice orbital angular momentum topology symmetry

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Manipulating Fano coupling in an opto-thermoelectric field

arXiv

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arXiv 2024年

作者： Lin, Linhan Lepeshov, Sergey Krasnok, Alex Huang, Yu Jiang, Taizhi Peng, Xiaolei Korgel, Brian A. Alu, Andrea Zheng, Yuebing State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Beijing100084 China Department of Electrical and Photonics Engineering DTU Electro Technical University of Denmark Building 343 Kgs. LyngbyDK-2800 Denmark Department of Electrical and Computer Engineering Florida International University MiamiFL33174 United States School of Physics and Electronics Hunan University Changsha410082 China Mc Ketta Department of Chemical Engineering The University of Texas at Austin AustinTX78712 United States Materials Science & Engineering Program Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Advanced Science Research Center City University of New York New YorkNY10031 United States Physics Program Graduate Center City University of New York NY10016 United States Walker Department of Mechanical Engineering The University of Texas at Austin AustinTX78712 United States

Fano resonances in photonics arise from the coupling and interference between two resonant modes in structures with broken symmetry. They feature an uneven and narrow and tunable lineshape, and are ideally suited for optical spectroscopy. Many Fano resonance structures have been suggested in nanophotonics over the last ten years, but reconfigurability and tailored design remain challenging. Herein, we propose an all-optical "pick-and-place" approach aimed at assemble Fano metamolecules of various geometries and compositions in a reconfigurable manner. We study their coupling behavior by in-situ dark-field scattering spectroscopy. Driven by a light-directed opto-thermoelectric field, silicon nanoparticles with high quality-factor Mie resonances (discrete states) and low-loss BaTiO3 nanoparticles (continuum states) are assembled into all-dielectric heterodimers, where distinct Fano resonances are observed. The Fano parameter can be adjusted by changing the resonant frequency of the discrete states or the light polarization. We also show tunable coupling strength and multiple Fano resonances by altering the number of continuum states and discrete states in dielectric heterooligomers. Our work offers a general design rule for Fano resonance and an all-optical platform for controlling Fano coupling on demand. Copyright © 2024, The Authors. All rights reserved.

关键词： Light polarization

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Demonstration of a Bosonic Quantum Classifier with Data Reuploading

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Physical Review Letters 2023年第1期131卷 013601-013601页

作者： Takafumi Ono Wojciech Roga Kentaro Wakui Mikio Fujiwara Shigehito Miki Hirotaka Terai Masahiro Takeoka Program in Advanced Materials Science Faculty of Engineering and Design Kagawa University 2217-20 Hayashi-cho Takamatsu Kagawa 761-0396 Japan JST PRESTO 4-1-8 Honcho Kawaguchi Saitama 332-0012 Japan Department of Electronics and Electrical Engineering Keio University 3-14-1 Hiyoshi Kohoku-ku Yokohama 223-8522 Japan Advanced ICT Research Institute National Institute of Information and Communications Technology (NICT) Koganei Tokyo 184-8795 Japan Advanced ICT Research Institute National Institute of Information and Communications Technology 588-2 Iwaoka Nishi Kobe 651-2492 Japan

In a single qubit system, a universal quantum classifier can be realized using the data reuploading technique. In this study, we propose a new quantum classifier applying this technique to bosonic systems and successfully demonstrate it using a silicon-based photonic integrated circuit. We established a theory of quantum machine learning algorithm applicable to bosonic systems and implemented a programmable optical circuit combined with an interferometer. Learning and classification using part of the implemented optical quantum circuit with uncorrelated two photons resulted in a classification with a success probability of 94±0.8% in the proof of principle experiment. As this method can be applied to an arbitrary two-mode N-photon system, further development of optical quantum classifiers, such as extensions to quantum entangled and multiphoton states, is expected in the future.

关键词： Machine learning Optical quantum information processing Quantum algorithms

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InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells

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Results in Physics 2025年 69卷

作者： Zhichu, Chen Tahir, Muhammad Muhammad, Fida Aziz, Fakhra Ayub, Ambreen Badshah, Fazal Refat, Moamen S. Cakmak, Sadiye M. Rehan, Shanza Adam, Abdel Majid A. Alsuhaibani, Amnah Mohammed Ayob, Afida Sarker, Mahidur R Khan, Adam School of Electrical and Information Engineering Hubei University of Automotive Technology Shiyan 442002 China Semiconductor Physics & Devices Laboratory Department of Physics Faculty of Physical and Numerical Sciences Abdul Wali Khan University Mardan 23200 Pakistan Department of Electronics University of Peshawar KP Pakistan Department of Physics Women University Mardan KP 23200 Pakistan Department of Chemistry College of Science Taif University P.O. Box 11099 Taif 21944 Saudi Arabia Program of Medical Monitoring Techniques Osmangazi University Eskisehir Eskisehir 26040 Turkey Faculty of Materials and Chemical Engineering GIK Institute of Engineering Sciences and Technology Topi 23640 Pakistan Department of Physical Sport Sciences College of Sport Sciences & Physical Activity Princess Nourah bint Abdulrahman University P.O. Box 84428 Riyadh 11671 Saudi Arabia Centre for Integrated Systems Engineering and Advanced Technologies (INTEGRA) Department of Electrical Electronic and Systems Engineering Universiti Kebangsaan Malaysia Bangi 43600 Malaysia Institute of Visual Informatics Universiti Kebangsaan Selangor Malaysia Bangi 43600 Malaysia Universidad de Diseno Innovacion y Tecnología UDIT Av. Alfonso XIII 97 Madrid 28016 Spain Department of Electronics Engineering University of Engineering & Technology Peshawar (Abbottabad Campus) Abbottabad Pakistan

Herein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed of donor–acceptor (D-A) configuration at nanoscale provides larger interfacial junction area throughout the bulk volume of the photo-absorber D-A blend that facilitates excitons to efficiently dissociate within the bulk layer at D-A interface. Hence, InP/ZnS core–shell QDs and a fullerene derivative – phenyl C61 butyric acid methyl ester (PCBM) – are used as hybrid inorganic–organic D-A materials, respectively, to fabricate Ag/LiF/InP/ZnS-PCBM/P3HT/ITO/PET BHJ flexible SC. Indium tin oxide (ITO) coated on polyethylene terephthalate (PET), poly(3-hexylthiophene) (P3HT), lithium fluoride (LiF) and silver (Ag) are employed as a flexible substrate, hole transport layer (HTL), electron transport layer (ETL) and counter electrode, respectively. Photovoltaic (PV) properties of the fabricated BHJ flexible SC are studied under standard testing conditions (STC) i.e., 25 ⁰C, 1.5 AM global and 100 mW/cm² irradiation, which exhibit fill factor (FF) of 59 ± 0.02 % and power conversion efficiency (PCE) of 4.22 ± 0.05 %. Also, the heterojunction characteristics are investigated in dark condition (0 lx) to find series resistance (R_s), ideality factor (n), and reverse saturation current (I₀). X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible (UV–vis) spectroscopy are performed to further investigate the properties of InP/ZnS-PCBM thin films. Transmission electron microscopy (TEM) image of InP/ZnS core/shell QDs confirmed the successful synthesis of QDs having an average size of 5 ± 1 nm. The InP/ZnS-PCBM D-A photo-absorber layer reveals its potential as one of good candidates for hi

关键词： Flexible solar cell Hybrid bulk heterojunction (BHJ) InP/ZnS core/shell QDs Power conversion efficiency (PCE) Quantum dots (QDs) synthesis

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Nonvolatile Tuning of Bragg Structures Using Transparent Phase-Change Materials

arXiv

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arXiv 2023年

作者： Nobile, Nicholas A. Lian, Chuanyu Sun, Hongyi Huang, Yi-Siou Mills, Brian Popescu, Cosmin Constantin Callahan, Dennis Hu, Juejun Ríos Ocampo, Carlos A. Youngblood, Nathan Electrical & Computer Engineering Department The University of Pittsburgh PittsburghPA15213 United States Department of Materials Science & Engineering University of Maryland College ParkMD20742 United States Institute for Research in Electronics & Applied Physics University of Maryland College ParkMD20742 United States Department for Materials Science & Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Draper Scholar Program The Charles Stark Draper Laboratory Inc CambridgeMA02139 United States The Charles Stark Draper Laboratory Inc CambridgeMA02139 United States

Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide’s effective refractive index. Here, we model and experimentally demonstrate the use of Sb2Se3, a nonvolatile and transparent phase-change material, to tune the resonance conditions in two devices which leverage periodic Bragg gratings—a stopband filter and Fabry-Perot cavity. Through simulations, we show that similar refractive indices between silicon and amorphous Sb2Se3 can be used to induce broadband transparency, while the crystalline state can enhance the index contrast in these Bragg devices. Our experimental results show the promise and limitations of this design approach and highlight specific fabrication challenges which need to be addressed in future implementations. © 2023, CC BY.

关键词： Refractive index

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Role of Zn in tuning the structural, morphological and optical properties of V 2 O 5 nanostructures deposited by spray pyrolysis

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Materials Today: Proceedings 2021年 35卷 469-473页

作者： Sandesh Kumar Rai Rajesh Rai Raghavendra Bairy M.S. Murari A. Jayarama Richard Pinto Department of Mechanical Engineering Canara Engineering College Mangalore 574219 India Regional Research Center Visvesvaraya Technological University Belagav 590 018 India Department of Mechanical Engineering AJ Institute of Engineering and Technology Mangalore 575006 India Department of Physics NMAM Institute of Technology (Visvesvaraya Technological University Belagavi) Nitte Karkala 574110 India DST PURSE Program Mangalore University Mangalagangothri 574199 India Department of Physics Alva’s Institute of Engineering and Technology Moodbidri 574225 India Department of Electronics and Communication Engineering Alva’s Institute of Engineering and Technology Moodbidri 574225 India

Venadium Pentoxide (V 2 O 5 ) thin films were deposited by employing a spray pyrolysis technique on glass substrates at 573 K for different Zn-doping levels (0, 1, 3, 5 and 10 wt%) to study the optical, structural and morphological properties of pure and Zn-doped V 2 O 5 thin films. The characterisation study with powder X-ray diffraction confirms the orthorhombic structure and also that the films grow along (2 0 0) direction with increase in the doping concentration. The Scherer rule was employed to determine the crystallite size and found to be enhanced. Field Emission Scanning Electron Microscopy study reveals that the surface morphology modifications increase with Zn-doping. The surface topography of the prepared films was also studied using AFM and found to be enhanced. The optical energy band gap (Eg) of the prepared films was found to be varying between 3.27 eV and 3.72 eV due to increase in doping concentration. The interesting results of structural and optical parameters with the increase in Zn-doping concentration suggest that these nanostructured films are a promising material for opto-electronic device applications.

关键词： Zn-doped V 2 O 5 thin films Spray pyrolysis Energy band gap XRD FESEM Photon energy Surface morphology

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Reconstructing suspended sediment concentrations in the Mekong River Basin via semi-supervised-based deep neural networks

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Science of the Total Environment 2024年 955卷 176758页

作者： Nguyen, Thi Thu Ha Vu, Duc Quang Doan, Ngoc Phu Chi, Huynh Thi Khanh Li, Peixin Binh, Doan Van An, Yimeng Dung, Pham Tuan Hoang, Tuan A. Son, Mai Thai Laboratory of Environmental Sciences and Climate Change Institute for Computational Science and Artificial Intelligence Van Lang University Ho Chi Minh City Viet Nam Faculty of Environment School of Technology Van Lang University Ho Chi Minh City Viet Nam Department of Computer Science and Information System Thai Nguyen University of Education Viet Nam School of Electronics Electrical Engineering and Computer Science Queen's University Belfast United Kingdom College of Economics and Management Nanjing University of Aeronautics and Astronautics China Master program in Water Technology Reuse and Management Faculty of Engineering Vietnamese-German University Binh Duong Province Ben Cat City Viet Nam

The Mekong River Basin (MRB) is crucial for the livelihoods of over 60 million people across six Southeast Asian countries. Understanding long-term sediment changes is crucial for management and contingency plans, but the sediment concentration data in the MRB are extremely sporadic, making analysis challenging. This study focuses on reconstructing long-term suspended sediment concentration (SSC) data using a novel semi-supervised machine learning (ML) model. The key idea of this approach is to exploit abundant available hydroclimate data to reduce training overfitting rather than solely relying on sediment concentration data, thus enhancing the accuracy of the employed ML models. Extensive experiments on daily hydroclimate and SSC data obtained from 1979 to 2019 at the three main stations (i.e., Chiang Saen, Nong Khai, and Mukdahan) are conducted to demonstrate the superior performance of the proposed method compared to the state-of-the-art supervised techniques (i.e., Random Forest, XGBoost, CatBoost, MLP, CNN, and LSTM), and surpasses existing semi-supervised methods (i.e., CoReg, ⊓ Model, ICT, and Mean Teacher). This approach is the first semi-supervised method to reconstruct sediment data in the field and has the potential for broader application in other river systems. © 2024 The Author(s)

关键词： Self-supervised learning

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Structural, linear and nonlinear optical characterization of Ni and Al Co-Doped CdO semiconductor nanostructures for nonlinear optical device applications

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Materials Today: Proceedings 2021年 35卷 396-404页

作者： M. Banuprakash B. Abhishek Hrushikesh Acharya Raghavendra Bairy Shashidhara Bhat H. Vijeth M.S. Murari A. Jayarama Richard Pinto Department of PG Studies in Physics Alva’s College Moodabidri 574227 India Department of Physics NMAM Institute of Technology (Visvesvaraya Technological University Belagavi) Nitte Karkala 574110 India Department of Physics Mangalore University Mangalagangothri 574199 India DST PURSE Program Mangalore University Mangalagangothri 574199 India Department of Physics Alva’s Institute of Engineering and Technology Moodabidri 574227 India Department of Electronics and Communication Engineering Alva’s Institute of Engineering and Technology Moodabidri 574227 India

The effects of metallic doping (Ni and Al) on thin film CdO nanostructures have been investigated and their morphological, structural, linear and nonlinear optical properties have been studied. Thin films were grown using spray pyrolysis method with a substrate temperature of 300 °C for different Ni and Al doping concentrations (0, 1, 3, 5 and 10 wt%). Studies of films with Powder X-ray diffraction confirm the polycrystalline nature with the cubic crystal structure. The Scherer rule was employed to determine the crystallite size and found to be enhanced. The elemental analysis confirms the incorporation of Ni and Al into the host CdO matrix. The surface morphology was analysed using the Field Emission Scanning Electron Microscope and the grain size was found to be altered by increasing the doping content. To understand the characteristics of the defect state, open and closed aperture Z-scan measurement was performed using the DPSS continuous wave (532 nm) laser excitation and nonlinear absorption, refractive index and nonlinear susceptibility values of third order were calculated and found to be increasing with the increased concentration of the dopants. The encouraging findings of the nonlinear optical parameters with the increasing concentration of Ni and Al on CdO nanostructures indicate that doped films are a promising source for nonlinear device applications.

关键词： Ni-Al co-doped CdO thin films Spray pyrolysis Z-scan Surface morphology NLO properties Third order NLO

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