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IEEE Kansas Power and Energy Conference

作者： Lucas Sangoi Mendonça Valmir de Oliveira Academic Department of Electronics Federal University of Technology-Paraná Curitiba Brazil Academic Department of Electronics Graduate Program in Electrical and Computer Engineering Federal University of Technology-Paraná Curitiba Brazil

ISBN: (数字)9798350372403

ISBN: (纸本)9798350372410

This paper shows the design and implementation of a multi-resonant Class-E 2 DC-DC converter based on voltage- controlled oscillator. By cascading a Class-E inverter to a Class-E rectifier, a double soft-switching converter is obtained, in which, the active switch turns-on with zero voltage switching and the diode turns-off with zero derivative voltage switching. This work relies on design equations based on normalized charts that relate the resonant frequency to the current transfer function, quality factor and peak values for the switch variables. In order to activate the switch, a circuit scheme is proposed based on a voltage-controlled oscillator connected to a low-side gate-driver. Therefore, it is not necessary to use a microcontroller neither auxiliary power sources. Experimental results are presented to show the feasibility of the proposed converter.

关键词： Q-factor Voltage-controlled oscillators Transfer functions Resonant frequency Rectifiers Switches DC-DC power converters

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The design and evaluation of an AR-based serious game to teach programming

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Computers and Graphics (Pergamon) 2022年 103卷 1-18页

作者： Sharma, Vandit Bhagat, Kaushal Kumar Huang, Huai-Hsuan Chen, Nian-Shing Department of Electronics and Electrical Communication Engineering Indian Institute of Technology Kharagpur Kharagpur721302 India Advanced Technology Development Centre Indian Institute of Technology Kharagpur Kharagpur721302 India Institute for Research Excellence in Learning Sciences Program of Learning Sciences National Taiwan Normal University Taiwan

The ubiquity of smartphone and tablet devices, combined with the increasing availability of serious games, has enabled students to learn various abstract concepts in an appealing and convenient manner. While several researchers have explored the use of Augmented Reality (AR) in serious games, many of these games have not been critically explained or evaluated. To that end, we employed game-based learning methodologies and Game Learning Analytics (GLA) to systematize the design and evaluation of an AR-based serious game to teach programming. We evaluated our game for usability and effectiveness by conducting a user study on twenty-seven undergraduate students. The evaluation primarily consisted of a learning test conducted twice – before and after playing the game – along with a usability questionnaire that players completed after playing the game. Our results showed that players made significant progress after playing the game. The game helped players improve their basic programming skills, especially for the group having lower prior programming skills. The results highlighted various ways in which GLA can be used to benefit different stakeholders in the game. Based on players’ qualitative responses, we also identified several areas of improvement, most prominently the trade-off between ease of use and game complexity. We provide suggestions and discuss implications for future work. © 2022 Elsevier Ltd

关键词： Serious games

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Numerical analysis of Ga gradient effects in ACIGS absorbers for high-efficiency tandem solar cells

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Optical and Quantum electronics 2025年第3期57卷 1-19页

作者： Boukortt, Nour El I. Loureiro, Antonio Garcia Almutairi, Ohood A. Centro Singular de Investigación en Tecnoloxías Intelixentes University of Santiago de Compostela Santiago de Compostela Spain Department of Electronics and Information Systems Ghent University Technology Park 126 Zwijnaarde Belgium Department of Electronic and Electrical Engineering University College London LondonWC1E 6BT United Kingdom Energy Systems Program College of Engineering & Energy Abdullah Al Salem University Khaldiya Kuwait

Ag-alloyed Cu(In,Ga)Se₂ (ACIGS) is a promising material for the bottom subcell in tandem solar cell structures, offering a tunable bandgap that spans the optimal range for maximum efficiency;however, the bandgap widening of ACIGS thin films poses a significant challenge in enhancing their photocurrent. This paper investigates the impact of different grading profiles, specifically focusing on the 'hockey stick'/V-like Ga gradient–induced (GGI) profiles, on the performance of thin-film ACIGS cells. To enhance the physical understanding of these grading profiles we have used Silvaco TCAD tools to analyze how these profiles' depths, notch position, and slope affect the power conversion efficiency (PCE). The optimized ACIGS cell achieves a PCE of 25.80%, compared to 23.60% for the reference device. For the tandem configuration, we pair the optimized ACIGS bottom cell (double grading profile) with a perovskite top cell (band gap ~ 1.66 eV), achieving an overall efficiency of 30.26% under AM1.5G illumination. The obtained results highlight the critical role of Ga gradient profiles in enhancing the bottom cell's performance and stability. Additionally, we compare our results with existing studies to evaluate the broader impact of Ga compositional optimization on ACIGS-based solar cells. This work provides valuable insights into advanced grading strategies and helps us understand the physical behaviour of these high-performance tandem solar cells. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.

关键词： Silver alloys

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Exploring Regression and Classification in Big Data with Deep Learning

Exploring Regression and Classification in Big Data with Dee...

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2023 International Conference on Power Energy, Environment and Intelligent Control, PEEIC 2023

作者： Pandey, Ravindra Rongali, Aruna Sri Gopinath, S. Anute, Nilesh Nama, Forda Pund, Sachin Hult International Business School United States University of the Cumberlands Doctoral Information Technology Information Technology Emphasis Information Technology United States Karpagam Institute of Technology Department of Electronics and Communication Engineering Coimbatore India ASM's Institute of Business Management and Research Pune India University of Lampung Doctoral Program of Environtmental Science Department of Informatics Bandar Lampung Indonesia Shri Ramdeobaba College of Engineering and Management Department of Industrial Engineering Maharashtra Nagpur India

ISBN: (纸本)9798350357769

Deep gaining knowledge is a synthetic intelligence approach used to recognize complex facts. It uses many facts to recognize the complicated relationships between various factors. With deep learning, models can be built which might be capable of understanding the complicated patterns within big datasets. In this paper, we can explore using deep mastering in regression and type tasks on large datasets. In particular, we can use deep learning strategies to build a regression model that predicts a target value primarily based on the functions in a massive dataset and a classification version that can classify an object into one of the many classes of an extensive dataset. We can then discuss the overall performance of the fashions in comparison to standard models and talk about capability areas for development. Moreover, we will analyze the scalability of deep mastering strategies used on large datasets and discuss exceptional practices for building deep mastering fashions on massive datasets. Finally, we will summarize our findings and offer our conclusions approximately the use of deep studying in regression and type obligations on large datasets. © 2023 IEEE.

关键词： approximately gaining knowledge mastering performance regression

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Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer

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Nature electronics 2024年第1期7卷 17-28页

作者： Satterthwaite, Peter F. Zhu, Weikun Jastrzebska-Perfect, Patricia Tang, Melbourne Spector, Sarah O. Gao, Hongze Kitadai, Hikari Lu, Ang-Yu Tan, Qishuo Tang, Shin-Yi Chueh, Yu-Lun Kuo, Chia-Nung Lue, Chin Shan Kong, Jing Ling, Xi Niroui, Farnaz Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA United States Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA United States Department of Chemical Engineering Massachusetts Institute of Technology CambridgeMA United States Department of Physics Massachusetts Institute of Technology CambridgeMA United States Department of Chemistry Boston University BostonMA United States Department of Materials Science and Engineering National Tsing Hua University Hsinchu Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei Taiwan College of Semiconductor Research National Tsing Hua University Hsinchu Taiwan Department of Physics National Cheng Kung University Tainan Taiwan Taiwan Consortium of Emergent Crystalline Materials National Science and Technology Council Taipei Taiwan Program on Key Materials Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University Tainan Taiwan Division of Materials Science and Engineering Boston University BostonMA United States The Photonics Center Boston University BostonMA United States

Pristine van der Waals (vdW) heterostructures formed between two-dimensional (2D) and other materials can be used to create optical and electronic devices. However, the weak vdW forces alone do not allow direct physical stacking of arbitrary layers. As a result, vdW heterostructure fabrication typically requires solvents, sacrificial layers or high temperatures, which can introduce damage and contaminants. Here, we show that adhesive matrix transfer can eliminate these limitations and can provide vdW integration beyond the limits of vdW forces. In the approach, a hybrid high- and low-adhesion surface is used to decouple the forces driving the transfer from the vdW forces defining the heterostructure of interest. We show that the technique can be used to achieve direct vdW integration of diverse 2D materials (MoS2, WSe2, PtS2 and GaS) with dielectrics (SiO2 and Al2O3), which is conventionally forbidden but critical for active devices and scalable, aligned heterostructure formation. The approach also allows single-step 2D material-to-device integration, which we illustrate by fabricating arrays of monolayer MoS2 transistors. As any exposure to solvents or polymers is avoided, the interfaces and surfaces remain pristine. Thus, intrinsic 2D material properties can be probed without the influence of processing steps. The materials can be further engineered through surface treatments and used to fabricate unconventional device form factors. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.

关键词： Van der Waals forces

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A Federated Dictionary Learning Method for Process Monitoring With Industrial Applications

IEEE Transactions on Artificial Intelligence

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IEEE Transactions on Artificial Intelligence 2023年第5期4卷 1017-1028页

作者： Huang, Keke Liu, Xinyi Li, Fanbiao Yang, Chunhua Kaynak, Okyay Huang, Tingwen Central South University School of Automation Changsha410083 China Peng Cheng Laboratory Shenzhen518055 China Bogazici University Department of Electrical and Electronics Engineering Istanbul34342 Turkey University of Science and Technology Beijing Beijing100083 China Texas A&m University at Qatar Science Program Doha23874 Qatar

Edge computing is an indispensable technology in the Industry 4.0 era. The data are stored at the edge and transmission is prohibited due to concerns about data privacy. Thus, the traditional centralized data-driven modeling methods will face many difficulties and can hardly be used in practice. Federated learning aims to let local nodes learn a global model cooperatively while keeping their data localized. Motivated by the pioneering framework of federated learning, a federated dictionary learning method is proposed for process monitoring. In detail, local nodes train local data by the K-SVD method and learn local dictionaries. Then, local dictionaries, instead of local data, are transferred to the fusion center for calculation of the global dictionary. In order to guarantee an optimal global dictionary, a novel federated dictionary average strategy is introduced. Finally, the reconstruction errors of local data and the control limit are calculated based on the global dictionary for process monitoring. The performance of the proposed method is verified on a numerical simulation, the continuous stirred tank heater benchmark process, and the industrial aluminum electrolysis process. Process monitoring can help industrial enterprises monitor the operating status of the industrial process in real time based on the collected process data. However, industrial data are stored at the edge and enterprises pay more attention to the privacy of industrial data. The prohibition of external transmission of raw data leads to challenges for traditional centralized process monitoring methods. The federated dictionary learning method proposed in this article can have the good process monitoring performance under the premise of protecting data privacy, which is superior to some state-of-the-art methods. For example, in the aluminum electrolysis industrial process, the false alarm rate is only 1.91%, and the false discovery rate is 86.23%. The method has high data security and low mod

关键词： Process monitoring

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A Low Complexity ML-Based Methods for Malware Classification

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Computers, Materials & Continua 2024年第9期80卷 4833-4857页

作者： Mahmoud E.Farfoura Ahmad Alkhatib Deema Mohammed Alsekait Mohammad Alshinwan Sahar A.El-Rahman Didi Rosiyadi Diaa Salama Abd Elminaam Cybersecurity Department Al-Zaytoonah University of JordanAmman11733Jordan Department of Computer Science and Information Technology Applied CollegePrincess Nourah Bint Abdulrahman UniversityP.O.Box 84428Riyadh11671Saudi Arabia Faculty of Information Technology Applied Science Private UniversityAmman11931Jordan Computer Systems Program-Electrical Engineering Department Faculty of Engineering-ShoubraBenha UniversityCairo11629Egypt Research Center for Artificial Intelligence and Cybersecurity Electronics and Informatics OrganizationNational Research and Innovation Agency(BRIN)KST Samaun SamadikunBandung40135Republic of Indonesia Jadara Research Center Jadara UniversityIrbid21110Jordan MEU Research Unit Middle East UniversityAmman11831Jordan

The article describes a new method for malware classification,based on a Machine Learning(ML)model architecture specifically designed for malware detection,enabling real-time and accurate malware *** an innovative feature dimensionality reduction technique called the Interpolation-based Feature Dimensionality Reduction Technique(IFDRT),the authors have significantly reduced the feature space while retaining critical information necessary for malware *** technique optimizes the model’s performance and reduces computational *** proposed method is demonstrated by applying it to the BODMAS malware dataset,which contains 57,293 malware samples and 77,142 benign samples,each with a 2381-feature *** the IFDRT method,the dataset is transformed,reducing the number of features while maintaining essential data for accurate *** evaluation results show outstanding performance,with an F1 score of 0.984 and a high accuracy of 98.5%using only two reduced *** demonstrates the method’s ability to classify malware samples accurately while minimizing processing *** method allows for improving computational efficiency by reducing the feature space,which decreases the memory and time requirements for training and *** new method’s effectiveness is confirmed by the calculations,which indicate significant improvements in malware classification accuracy and *** research results enhance existing malware detection techniques and can be applied in various cybersecurity applications,including real-timemalware detection on resource-constrained *** and scientific contribution lie in the development of the IFDRT method,which provides a robust and efficient solution for feature reduction in ML-based malware classification,paving the way for more effective and scalable cybersecurity measures.

关键词： Malware detection ML-based models dimensionality reduction feature engineering

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic Materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & Materials Society.

关键词： Threshold voltage

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First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic Systems

First Demonstration of HZO-LNOI Integrated Ferroelectric Ele...

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2023 International Electron Devices Meeting, IEDM 2023

作者： Xu, Zefeng Chen, Chun-Kuei Lin, Hong-Lin Gao, Yuan Ke, Wei Xu, Baochang Dmitriev, Pavel Arbiz, Carlan Zamburg, Evgeny Touzard, Steven Cai, Xinlun Lee, James Venkatesan, Suresh Danner, Aaron Thean, Aaron Voon-Yew Department of Electrical and Computer Engineering Singapore Nus Graduate School Integrative Sciences and Engineering Program Singapore 117583 Singapore School of Electronics and Information Technology 117583 Singapore Centre for Quantum Technologies Nus Singapore Poet Technologies Canada Sun Yat-Sen University 510275 China

ISBN: (纸本)9798350327670

We have successfully demonstrated, for the first time, an innovative back-end-of-line (BEOL) compatible electro-optic modulator and memory (EOMM) based on Lithium Niobate on Insulator (LNOI) micro-ring resonator (MRR) integrated with Ferroelectric Hafnium Zirconate Hf0.5Zr0.5O (HZO) non-volatile analog memory. High non-volatile memory and modulation performances are both achieved in a single compact device, exhibiting high extinction ratio of 13.3 dB, excellent efficiency of 66pm/V, stable nine-state switching, record-high endurance exceeding 109 cycles. This is accomplished by utilizing Pockels effect in LNOI, induced by electric-field effect from remnant HZO ferroelectric polarization. We studied the system implementation of reconfigurable chiplet-interposer photonic interconnect, enabled by the EOMM and EOMM with hybrid thermal-optical modulation. Our model shows a potential 70% energy efficiency improvement over conventional electrical interposer interconnect. We have also tested the integration of the EOMM with POET technologies' 400G Tx/Rx optical interposer chip and studied a limited scale demonstration of the EOMM device. © 2023 IEEE.

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Clustering Analysis of a Spatiotemporal Dataset with a Novel Kernel Density Estimator

Clustering Analysis of a Spatiotemporal Dataset with a Novel...

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2023 International Conference on Machine Learning and Cybernetics, ICMLC 2023

作者： Yu, Jen-Chien Yang, Chun-Chieh Gilbert, John Reuben Liu, Rou-Jun Oyang, Yen-Jen Yang, Meng-Han National Kaohsiung University of Science and Technology Department of Computer Science and Information Engineering Kaohsiung City807618 Taiwan National Taiwan University Master Program in Statistics Taipei106216 Taiwan National Taiwan University Department of Computer Science & Information Engineering Taiwan Graduate Institute of Biomedical Electronics and Bioinformatics National Taiwan University Taiwan

ISBN: (纸本)9798350303780

A vast number of spatiotemporal datasets collected from a wide range of sources has motivated scientists to develop effective approaches to identify interesting patterns hidden in these datasets. In this respect, kernel density estimators, which belong to a class of non-parametric estimators in statistics, have been widely exploited in recent years. With this background, we have developed a novel kernel density estimator aiming to provide accurate analysis results. According to the evaluation with a real spatiotemporal dataset, which collected emergency medical service records in a county in the United States, the proposed kernel density estimator can approximate the probability density function significantly more accurately than a conventional kernel density estimator. Furthermore, we have exploited the proposed kernel density estimator to identify interesting patterns hidden in the real spatiotemporal dataset. © 2023 IEEE.

关键词： Probability density function

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