We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared...
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We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature He3 ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
The influence of plastic anisotropy on the mechanical behaviour of a rolled aluminium plate under quasi-static loading conditions is studied experimentally and numerically. Material tests in different directions with ...
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An experimental investigation on the laser performance of an a-oriented Tm,Ho:YAlO3 crystal end-pumped by a wavelength tunable Ti:Sapphire laser is presented in this paper. Single- and dual-wavelength operations of Tm...
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Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were in...
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Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.
Graphene,an atomic carbon layer arranged in sp2 style has attracted enormous interest due to its excellent electronic,magnetic and thermal ***,much of the unique properties of graphene are accorded to that of single l...
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Graphene,an atomic carbon layer arranged in sp2 style has attracted enormous interest due to its excellent electronic,magnetic and thermal ***,much of the unique properties of graphene are accorded to that of single layer graphene(SLG).It would be very desirable to modify few-layer graphene(FLG)samples so that they have
It has been a challenge to achieve high efficiency organic photovoltaics (OPV) that absorb long wavelength solar radiation without incurring unacceptable reductions in open circuit voltage (V_(oc)) or charge separatio...
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ISBN:
(纸本)9781424499663
It has been a challenge to achieve high efficiency organic photovoltaics (OPV) that absorb long wavelength solar radiation without incurring unacceptable reductions in open circuit voltage (V_(oc)) or charge separation efficiency. Based on the parent structure of the 2, 4-bis[4-(N, N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine (SQ), we have increased V_(oc) using a family of highly near-infrared absorbing SQs, achieving values as high as 0.94 V. These SQ donors are: 2, 4-bis[4-(N-Phenyl-1-naphthylamino)-2,6-dihydroxyphenyl] squaraine (1-NPSQ),2,4-bis[4-(N,N-diphenylamino)-2,6 dihydroxyphenyl] squaraine (DPSQ), 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl] asymmetric squaraine (DPASQ). The spin-cast SQ, 1-NPSQ, DPSQ and DPASQ donors are then coated with the acceptor C_(60) to form bulk heterojunction (BHJ) solar cells that take advantage of their exceptionally high absorption coefficient and nanocrystalline morphology to overcome the short diffusion length characteristic of these materials. Combined with a high short-circuit current density (J_(sc)=10.6 mA/cm~2) and high fill factor (FF=0.64), the optimized 1-NPSQ/C_(60) photovoltaic cells with 1-NPSQ annealed at elevated temperature have a power conversion efficiency of η_p as high as 6.0% (correcting for solar mismatch) at 1 sun (AM 1.5G) simulated solar illumination, which to our knowledge is the highest efficiency reported to date for small molecule OPVs.
Based on the Galerkin/Least squares finite element method under arbitrary Lagrange-Euler description, the equilibrium iteration algorithm in which forces applied by fluids onto rigid bodies are treated as converging p...
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Based on the Galerkin/Least squares finite element method under arbitrary Lagrange-Euler description, the equilibrium iteration algorithm in which forces applied by fluids onto rigid bodies are treated as converging parameter is established for analyzing the fluid-solid interaction problems, and a new algorithm of mesh updating on the basis of pseudo-elasticity method is proposed which can maintain fluid elements sides straight with mid-nodes coinciding with the center of element sides during mesh motion. The numerical example is about a mass-spring system vibrating freely in closed fluids which is analyzed with the method proposed, and the equivalent damping ratio, added-mass introduced by fluid-solid interaction are obtained as well as the streamlines of flow and pressure contours.
A process, continuous wrapping tantalum barrier, has been developed and investigated in order to reduce the manufacturing cost. By avoiding inserting expensive tantalum tube, a long sheet barrier was directly used to ...
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A process, continuous wrapping tantalum barrier, has been developed and investigated in order to reduce the manufacturing cost. By avoiding inserting expensive tantalum tube, a long sheet barrier was directly used to wrap a prior restack. In this work, a tantalum barrier with 20 % overlap was wrapped onto sub-elements. Then 18-filament Nb 3 Sn plus 1 copper core restack billet was successfully drawn down and extruded into round wire as thin as a diameter of 0.84 mm. The longitudinal and cross-sectional images revealed most of barriers were continuous and intact. However, further experiments are needed to optimize the process in order to keep the all barriers continuous and intact after manufacturing.
In a surprising variety of cases, interfaces in normally ductile materials can undergo timedependent brittle cracking under the influence of a tensile stress, either applied externally or existing as an internal resid...
In a surprising variety of cases, interfaces in normally ductile materials can undergo timedependent brittle cracking under the influence of a tensile stress, either applied externally or existing as an internal residual stress. The connecting feature in all these cases is the presence of a surface-adsorbed element that is highly mobile in comparison to the constituent elements of the material. As in the phenomena of diffusion creep and diffusive growth of cavities at high temperatures, the driving force for this cracking is the work done by the tensile stress when a surface atom enters the solid. At temperatures below about 0.5 Tm of the solid, this occurs mainly along grain boundaries. Examples of systems that have been studied in some detail include cracking of alloy steels by sulfur, Cu-Sn alloys by tin, and nickel-based alloys by oxygen. Because the cracking involves diffusive penetration along grain boundaries, the rate of cracking is highly sensitive to grain-boundary structure and composition, and these variables offer opportunities to control the problem. We are aiming at a quantitative understanding of the effects of grain-boundary structure, stress, and temperature on this phenomenon by crack-growth experiments on bicrystals, by atomistic modeling of the stress-driven diffusion, and by micromechanical modeling of the events occurring at the tip of a growing crack.
This work established a new analytical model based upon the equivalent constraint model (ECM) to constitute an available predictive approach for analyzing the ultimate strength and simulating the stress/strain respo...
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This work established a new analytical model based upon the equivalent constraint model (ECM) to constitute an available predictive approach for analyzing the ultimate strength and simulating the stress/strain response of general symmetric laminates subjected to combined loading, by taking into account the effect of matrix cracking. The ECM was adopted to mainly predict the in-plane stiffness reduction of the damaged laminate. Basic consideration that progressive matrix cracking provokes a re-distribution of the stress fields on each lamina within laminates, which greatly deteriorates the stress distributed in the primary load-bearing lamina and leads to the final failure of the laminates, is introduced for the construction of the failure criterion. The effects of lamina properties, lay-up configurations and loading conditions on the behaviors of the laminates were examined in this paper. A comparison of numerical results obtained from the established model and other existed models and published experimental data was presented for different material systems. The theory predictions demonstrated great match with the experimental observations investigated in this study.
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