We have performed an angle-resolved photoemission spectroscopy study of SrVO3 thin films. Utilizing thin films prepared in situ, with well-defined and atomically flat surfaces, contributions from surface states center...
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We have performed an angle-resolved photoemission spectroscopy study of SrVO3 thin films. Utilizing thin films prepared in situ, with well-defined and atomically flat surfaces, contributions from surface states centered at ∼−1.5 eV were dramatically reduced, enabling us to study the bulklike V 3d states, including the incoherent part. A clear band dispersion is observed not only in the coherent part but also in the incoherent part and the spectral weight of the incoherent part is larger within the Fermi volume. These findings are particularly significant since the description of the so-called incoherent Hubbard band in SrVO3 needs to include the nonlocal interaction between the atoms. These trends are well reproduced by dynamical mean-field theory calculations.
We analyzed photoluminescence (PL) spectra of In-rich InxAl1−xN nanocolumns (NCs; x = 0.80) and film (x = 0.82) using the free-electron recombination to bound (FERB) model. The FERB model fits well to the PL spectra o...
We analyzed photoluminescence (PL) spectra of In-rich InxAl1−xN nanocolumns (NCs; x = 0.80) and film (x = 0.82) using the free-electron recombination to bound (FERB) model. The FERB model fits well to the PL spectra of the In-rich InxAl1−xN film and NCs, which implies that light-emitting properties of In-rich InxAl1−xN are similar to those of InN. We obtained bandgap energies and electron carrier densities from the results of fitting the PL spectra.
Photo-excited carrier relaxation dynamics in InN films were investigated using femtosecond transient measurements. We measured two samples with different background carrier densities, and discussed the influence of th...
Photo-excited carrier relaxation dynamics in InN films were investigated using femtosecond transient measurements. We measured two samples with different background carrier densities, and discussed the influence of the carrier densities on the relaxation dynamics. We also found that the slow decay component disappears under the optimized condition because of the effects of equilibrium band filling and bandgap renormalization.
We observed large enhancement of reflected second harmonic generation (SHG) using the one-dimensional photonic effect in regularly arranged InGaN/GaN single-quantum-well nanowalls. Using the effect when both fundament...
We observed large enhancement of reflected second harmonic generation (SHG) using the one-dimensional photonic effect in regularly arranged InGaN/GaN single-quantum-well nanowalls. Using the effect when both fundamental and SH resonate with the photonic mode, we obtained enhancement of about 40 times compared with conditions far from resonance.
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