Recent developments in 2D nanomaterials have greatly expanded their use in engineering applications. Graphitic carbon nitride (g-C3N4) shows a combination of electrical conductivity, sensing and luminescence abilities...
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3D bioprinting is an innovative approach that overcomes the limitations of traditional methods for creating cell-laden biomaterials and constructs. It allows for the fabrication of complex and biologically active tiss...
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In this study, the treatment of pharmaceutical wastewater was conducted using electrooxidation (EO) and ozone-assisted electrooxidation (EO/O3) with Pt-coated Ti electrodes (Pt/Ti). The removal of chemical oxygen dema...
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Surface lattice resonances (SLRs) in metasurfaces are promising in applications of sub-wavelength devices, owning properties such as high quality (high-Q) factors, large local field enhancement and extensive long-rang...
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Sb 2 Se 3 is used to switch between broadband transparency and enhanced index contrast in two device types leveraging Bragg gratings for tunable stop-and pass-band functionalities. Experimental results highlight fabr...
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ISBN:
(纸本)9798350369311
Sb
2
Se
3
is used to switch between broadband transparency and enhanced index contrast in two device types leveraging Bragg gratings for tunable stop-and pass-band functionalities. Experimental results highlight fabrication challenges and efficacy of the designs.
Plasmonic gold nanoparticles (AuNPs) exhibit a phenomenon called localized surface plasmon resonance (LSPR), making them suitable for several applications in nanotheranostics, bio-imaging and optoelectronic sensing. H...
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This paper presents a 20 W high-power RF-to-DC rectifier that can be applied to wireless power transfer (WPT) systems. To address the power limitations of conventional diodes, a rectifier is designed based on a galliu...
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ISBN:
(数字)9798350349139
ISBN:
(纸本)9798350349146
This paper presents a 20 W high-power RF-to-DC rectifier that can be applied to wireless power transfer (WPT) systems. To address the power limitations of conventional diodes, a rectifier is designed based on a gallium nitride (GaN) integrated circuit (IC) quasi-vertical Schottky barrier diode (SBD). Leveraging the advantages of high mobility, wide bandgap, and saturation velocity of the GaN, significant benefits of the diode have been derived, with an ultra-low turn-on voltage of 0.23 ± 0.005 V (at 1 A/cm
2
) and a high breakdown voltage of 180 V, to improve the rectification performance. Using this diode, a high-power rectifier with a wide input power range and high efficiency is developed. The proposed rectifier structure consists of a single-shunt self-developed diode and a topology with class-F harmonics control networks. It achieves a peak power conversion efficiency of 72.9% with an input power of 43 dBm at 900 MHz.
Surface features of natural materials such as cuticles, shells, and leaves continue to be used as models for creating sophisticated infrastructure, landscape, and microdevice designs. Optical microscopy is the easiest...
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