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Annual Allerton Conference on Communication, Control, and Computing

作者： Chung Chan Tie Liu the Institute of Network Coding at the Chinese University of Hong Kong the Shenzhen Key Laboratory of Network Coding Key Technology and Application China and the Shenzhen Research Institute of the Chinese University of Hong Kong. the Department of Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA

ISBN: (纸本)9781509018253

This paper considers two mutual-information based approaches for clustering random variables proposed in the literature: clustering by mutual information relevance networks (MIRNs) and clustering by multivariate mutual information (MMI). Despite being two seemingly very different approaches, the derived clustering solutions share very strong structural similarity. Motivated by this curious fact, in this paper we show that there is a precise connection between these two clustering solutions via the celebrated Chow-Liu tree algorithm in machine learning: Under a Chow-Liu tree approximation to the underlying joint distribution, the clustering solutions provided by MIRNs and by MMI are, in fact, identical. This solidifies the heuristic view of clustering by MMI as a natural generalization of clustering by MIRNs from dependency-tree distributions to general joint distributions.

关键词： approaches MRNs MMI

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Proving and disproving information inequalities

Proving and disproving information inequalities

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IEEE International Symposium on Information Theory

作者： Siu-Wai Ho Chee Wei Tan Raymond W. Yeung Institute for Telecommunications Research University of South Australia Department of Computer Science City University of Hong Kong Key Laboratory of Network Coding Key Technology and Application The Chinese University of Hong Kong Shenzhen China

Proving an information inequality is a crucial step in establishing the converse results in coding theorems. However, an information inequality involving many random variables is difficult to be proved manually. In [1], Yeung developed a framework that uses linear programming for verifying linear information inequalities. Under this framework, this paper considers a few other problems that can be solved by using Lagrange duality and convex approximation. We will demonstrate how linear programming can be used to find an analytic proof of an information inequality. The way to find a shortest proof is explored. When a given information inequality cannot be proved, the sufficient conditions for a counterexample to disprove the information inequality are found by linear programming.

关键词： Cramer-Rao bounds Entropy Random variables Joints Linear programming Channel coding

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Developing ISO 9241-151 product certification process: Challenges

Developing ISO 9241-151 product certification process: Chall...

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2nd International Conference on Design, User Experience, and Usability: Web, Mobile, and Product Design, DUXU 2013, Held as Part of 15th International Conference on Human-computer Interaction, HCI International 2013

作者： Çaǧiltay, Kürşat Alacam, Ozge Ocak, Nihan Erdal, Feride Department of Computer Education and Instructional Technology Middle East Technical University Turkey Department of Informatics University of Hamburg 22527 Hamburg Germany Human Computer Interaction Research and Application Laboratory Middle East Technical University Turkey

ISBN: (纸本)9783642392528

ISO 9241 Ergonomics of Human-System Interaction Standard, which is also called as Ergonomic requirements for office work with visual display terminals, is a standard containing many parts about ergonomics of human computer interaction. In this paper, we aim to elaborate the challenges evoked during ISO 9241-151 Product Certification Process handled at the Middle East Technical University (METU), Human computer Interaction research and application laboratory (METU-HCI-LAB), which is the first and only accredited laboratory of Turkish Standards Institute-TSE within the scope of "TS EN ISO/IEC 9241-151". © 2013 Springer-Verlag Berlin Heidelberg.

关键词： User interfaces

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High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schot...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Qi Zhou Wanjun Chen Shenghou Liu Bo Zhang Zhihong Feng Shujun Cai Kevin J. Chen State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan P.R. China Science and Technology on Reliability Physics and Application Technology of Electronic Component Lab. Guangzhou P.R. China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong The Science and Technology on ASIC Lab. Hebei Semiconductor Research Institute Shijiazhuang P.R. China

In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology. Based on this concept, the Schottky-Source (SS) InAlN/GaN HEMTs are proposed. The SS HEMTs with a L GD of 15 μm showed a three-terminal BV of 650 V, while conventional InAlN/GaN HEMTs of the same geometry showed a maximum BV of 184 V. Without using any field-plate the result measured in the proposed device is the highest BV ever achieved on InAlN/GaN HEMTs. The corresponding specific on-resistance (R sp, on ) is as low as 3.4 mΩ·cm 2 . A BV of 118 V was also obtained in an SS InAlN/GaN HEMTs with L GD =1 μm, which is the highest BV in GaN-based HEMTs featuring such a short L GD with GaN buffer.

关键词： HEMTs MODFETs Gallium nitride Aluminum gallium nitride Gold

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IHS-Based Fusion to Enhance Vegetation Zone in THEOS Imagery

IHS-Based Fusion to Enhance Vegetation Zone in THEOS Imagery

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2012 Asia Pacific Conference on Environmental Science and Technology(APEST 2012)

作者： Sathit Intajag Wiphada Wettayaprasit Supaporn Kansomkeat Artificial Intelligence Research Laboratory Software Engineering and Application Department of Computer Science Faculty of Science Prince of Songkla UniversityHat YaiSongkhlaThailand

Multispectral(MS) and panchromatic(PAN) data provided by THEOS(THailand Earth Observation System) have different spatial *** combination between MS and PAN called pan-sharpening of THEOS images paves the way for the visual interpretation of large-area-scale ***,a lot of image fusion methods have been developed;especially,the intensity-hue-saturation(IHS)-based methods are well known in quick image ***,the IHS-based techniques produce color distortion due to the unnatural spectral response of THEOS sensors,particularly in vegetated *** proposed method improves vegetation indexes(VIs) by normalization and automatic threshold to declare the vegetation *** procedure is achieved in two steps:pan-sharpening by using the generalized IHS(GIHS) technique and vegetation enhancement by increasing the natural greenness of the vegetation *** proposed method provides very good results in terms of visual *** addition,this method also improves the fusion quality by enhancing the vegetated zones quite well.

关键词： THEOS imagery,Vegetation enhancement,Vegetation indexes(VI),Image fusion,Intensity-hue-saturation(IHS) transform.

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Real-valued negative selection algorithm with variable-sized self radius

Real-valued negative selection algorithm with variable-sized...

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3rd International Conference on Information Computing and applications, ICICA 2012

作者： Zeng, Jinquan Tang, Weiwen Liu, Caiming Hu, Jianbin Peng, Lingxi School of Computer Science and Engineering University of Electronic Science and Technology of China 610054 Chengdu China Sichuan Communication Research Planning and Designing Co. Ltd. 610041 Chengdu China Laboratory of Intelligent Information Processing and Application Leshan Normal University 614004 Leshan China School of Electronics and Information Nantong University 226019 Nantong China Department of Computer and Education Software Guangzhou University 510006 Guangzhou China

ISBN: (纸本)9783642340611

Negative selection algorithm (NSA) generates the detectors based on the self space. Due to the drawbacks of the current representation of the self space in NSAs, the generated detectors cannot enough cover the non-self space and at the same time, cover some of the self space. In order to overcome the drawbacks, a new scheme of the representation of the self space is introduced with variable-sized self radius, which is called VSRNSA. Using the variable-sized self radius to represent the self space, we can generate the more quality detectors. The algorithm is tested using the well-known real world datasets;preliminary results show that the new approach enhances NSAs in increasing detection rates and decrease false alarm rates, and without increase in complexity. © 2012 Springer-Verlag.

关键词： computers

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An improved real-valued negative selection algorithm for anomaly detection

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International Journal of Advancements in Computing Technology 2012年第16期4卷 453-459页

作者： Zeng, Jinquan Tang, Weiwen Liu, Caiming Hu, Jianbin Peng, Lingxi School of Computer Science and Engineering University of Electronic Science and Technology of China Chengdu China Sichuan Communication Research Planning and Designing Co. ltd Chengdu China Laboratory of Intelligent Information Processing and Application Leshan Normal University Leshan China School of Electronics and Information Nantong University Nantong China Department of Computer and Education Software Guangzhou University Guangzhou China

Conventional classification algorithms need samples for all classes (e.g. normal and abnormal) during the training phase. However, in many anomaly detection application, we can only get a class samples (commonly, normal samples) to train detectors. This paper presents an improved negative selection algorithm (NSA) and its applications to anomaly detection. This approach can only use normal samples to train detectors;at the same time, in order to overcome the drawbacks of the current representation of the self-space in NSAs, a new scheme of the representation of the self-space is introduced with variable-sized self-radius. In our experiments, this approach is tested using the wellknown real world datasets;preliminary results show that the new approach improves the overall performance of detectors and without increase in complexity.

关键词： Artificial intelligence

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Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT

Observation of trap-assisted steep sub-threshold swing in sc...

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69th Device research Conference, DRC 2011

作者： Zhou, Qi Chen, Hongwei Zhou, Chunhua Feng, Zhihong Cai, Shujun Chen, Kevin J. Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Kowloon Hong Kong National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuan China

ISBN: (纸本)9781612842417

Devices with steep subthreshold swing (SS) are of great interest and significance in view of increasing subthreshold leakage current with the continuous MOSFET scaling. The standby power dissipation has grown due to the nonscalability of the SS to below 60 mV/dec at room temperature (RT). To circumvent this obstacle, novel devices that employ various turn-on mechanisms have been proposed1-4. In this work, we report the observation of steep SS∼20 mV/dec in Schottky source/drain (SSD) Al2O 3/InAlN/GaN MIS-HEMTs over a drain bias range of 0.1 to 5 V. The devices also feature high ION/IOFF ratio (∼10 9) and appreciable current drive of IDmax=230 mA/mm at room temperature. The devices are also characterized at elevated temperature (T) up to 155 °C. Steep SS lower than the theoretical diffusion limit is consistently observed over the testing temperature range. It is suggested that the steep switching behavior is obtained through the means of a dynamic de-trapping process at the Al2O3/InAlN interface. The dynamic de-trapping enables a dynamic negative shift in the threshold voltage during the gate upswing and effectively facilitates the formation of a sub-threshold swing as steep as 18 mV/dec. © 2011 IEEE.

关键词： Threshold voltage

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Relationship classification in large scale online social networks and its impact on information propagation

Relationship classification in large scale online social net...

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IEEE INFOCOM 2011

作者： Tang, Shaojie Yuan, Jing Xufei Mao Xiang-Yang Li Chen, Wei Dai, Guojun Department of Computer Science Illinois Institute of Technology United States Department of Computer Science NanJing University China Microsoft Research Asia China Beijing Key Laboratory of Intelligent Telecommunications Software and Multimedia Beijing University of Posts and Telecommunications China Institute of Computer Application Technology Hangzhou Dianzi University China

ISBN: (纸本)9781424499212

In this paper, we study two tightly coupled topics in online social networks (OSN): relationship classification and information propagation. The links in a social network often reflect social relationships among users. In this work, we first investigate identifying the relationships among social network users based on certain social network property and limited pre-known information. Social networks have been widely used for online marketing. A critical step is the propagation maximization by choosing a small set of seeds for marketing. Based on the social relationships learned in the first step, we show how to exploit these relationships to maximize the marketing efficacy. We evaluate our approach on large scale real-world data from Renren network, showing that the performances of our relationship classification and propagation maximization algorithm are pretty good in practice. © 2011 IEEE.

关键词： Social networking (online)

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Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT

Observation of trap-assisted steep sub-threshold swing in sc...

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Device research Conference

作者： Qi Zhou Hongwei Chen Chunhua Zhou Zhihong Feng Shujun Cai Kevin J. Chen Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Kowloon Hong Kong National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuan China

The Schottky source/drain Al 2 O 3 /InAlN/GaN MISHEMTs feature steep switch-on behavior assisted by a dynamic charge-detrapping process is experimentally demonstrated. The SSD MISHEMTs exhibit steep SS (~20 mV/dec), high On/Off ratio (-109) and appreciable drive current (230mA/mm). The low SS is maintained over a wide range of drain bias voltage and temperature.

关键词： Gallium nitride Logic gates

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