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IEEE Southwest Symposium on Image Analysis and Interpretation

作者： H.P. Ng S.H. Ong K.W.C. Foong P.S. Goh W.L. Nowinski Biomedical Imaging Laboratory Agency for Science Technology and Research Singapore Graduate School for Integrative Sciences and Engineering NUS Singapore Department of Electrical and Computer Engineering National University of Singapore Sun Microsystems Singapore Department of Preventive Dentistry National University of Singapore Sun Microsystems Singapore Department of Diagnostic Radiology National University of Singapore Sun Microsystems Singapore

ISBN: (纸本)1424400694

We propose a methodology that incorporates k-means and improved watershed segmentation algorithm for medical image segmentation. The use of the conventional watershed algorithm for medical image analysis is widespread because of its advantages, such as always being able to produce a complete division of the image. However, its drawbacks include over-segmentation and sensitivity to false edges. We address the drawbacks of the conventional watershed algorithm when it is applied to medical images by using k-means clustering to produce a primary segmentation of the image before we apply our improved watershed segmentation algorithm to it. The k-means clustering is an unsupervised learning algorithm, while the improved watershed segmentation algorithm makes use of automated thresholding on the gradient magnitude map and post-segmentation merging on the initial partitions to reduce the number of false edges and over-segmentation. By comparing the number of partitions in the segmentation maps of 50 images, we showed that our proposed methodology produced segmentation maps which have 92% fewer partitions than the segmentation maps produced by the conventional watershed algorithm

关键词： Biomedical imaging Image segmentation Clustering algorithms Medical diagnostic imaging Partitioning algorithms Pixel Image edge detection Rain Surface morphology Surface topography

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Silicon electronic photonic integrated circuits for high speed analog to digital conversion

Silicon electronic photonic integrated circuits for high spe...

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作者： Kärtner, F.X. Amataya, R. Barbastathis, G. Byun, H. Gan, F. Holzwarth, C.W. Hoyt, J.L. Ippen, E.P. Olubuyide, O.O. Orcutt, J.S. Park, M. Perrott, M. Popović, M.A. Rakich, P.T. Ram, R.J. Smith, H.I. Geis, M. Grein, M. Lyszczarz, T. Spector, S. Yoon, J.U. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States bResearch Laboratory of Electronics Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Mechanical Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Material Science and Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Microsystems Technology Laboratories Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Department of Physics Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 United States Lincoln Laboratory Massachusetts Institute of Technology 244 Wood St. Lexington MA 02420 United States

Integrated optical components on the silicon platform and optically enhanced electronic sampling circuits are demonstrated that enable the fabrication of a variety of electronic-photonic A/D converter chips surpassing... 详细信息

关键词： Analog to digital conversion

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Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion

Silicon Electronic Photonic Integrated Circuits for High Spe...

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IEEE International Conference on Group IV Photonics

作者： F.X. Kartner R. Amataya G. Barbastathis H. Byun F. Gan C.W. Holzwarth J.L. Hoyt E.P. Ippen O.O. Olubuyide J.S. Orcutt M. Park M. Perrott M.A. Popovic P.T. Rakich R.J. Ram H.I. Smith M. Geis M. Grein T. Lyszczarz S. Spector J.U. Yoon Lincoln Laboratory Massachusetts Institute of Technology Lexington MA USA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA USA Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA USA

ISBN: (纸本)1424400953

关键词： Silicon Photonic integrated circuits Analog-digital conversion Filter bank Optical filters Sampling methods High speed optical techniques Optical feedback Ultrafast optics Wavelength division multiplexing

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Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them

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Journal of Vacuum science and technology B: Microelectronics and Nanometer Structures 2005年第5期23卷 2109-2113页

作者： Choy, Henry K. H. Fonstad, Clifton G. Department of Electrical Engineering and Computer Science Microsystems Technology Laboratory Massachusetts Institute of Technology Cambridge MA 02139

We demonstrate that photoluminescence from single quantum well structures grown on indium gallium arsenide (InGaAs) compositionally graded buffers on gallium arsenide substrates can be substantially improved by using very high substrate temperatures during the growth of the graded buffer. Due to the high growth temperature, deepened crosshatches develop on top of the graded buffers as the substrate temperature increased, which have consequences for subsequent quantum well growth. It was also observed that indium incorporation becomes a variable of many factors, and has to be calibrated empirically. Vastly higher arsenic pressure is also necessary to keep the growth front arsenic stable. High quality quantum well structures can only be grown on top of the graded buffers in a narrow range of substrate temperatures around 450 °C, much lower than what one would typically use for the pseudomorphic InGaAs growth on the InP substrates. © 2005 American Vacuum Society.

关键词： Semiconducting indium gallium arsenide

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Thermal processing and mobility in strained heterostructures on insulator

Thermal processing and mobility in strained heterostructures...

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207th ECS Meeting

作者： Åberg, Ingvar Chléirigh, Cáit Ní Hoyt, Judy L. Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science MIT 60 Vassar St. Cambridge MA 02139 United States

Strain is used in mainstream CMOS production to enhance device performance at the 90 nm node. Strained Si and novel material implementations in fully depleted silicon-on-insulator and multi-gate configurations are of interest for sub-45-nm applications where there is a need to improve electron and hole mobilities while also providing the electrostatic control necessary for continued geometric device scaling. Implementations of strained Si and strained heterostructures on insulator are reviewed. The Ge-free strained silicon directly on insulator structure has good thermal stability, high electron mobility and improved hole mobilities in particular at low vertical effective electrical fields. In addition, such wafers can readily be incorporated in existing fully or partially depleted silicon on insulator processes. Strained Si/strained SiGe/strained Si heterostructures on insulator provide higher hole mobilities. Simultaneous electron and hole mobility enhancements of 2X at all effective fields are demonstrated in fully-depleted heterostructure on insulator MOSFETs. Thermal budget constraints for processing such devices, particularly with respect to Ge diffusion, are discussed.

关键词： Heterojunctions

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2004 Best Paper Award

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IEEE Transactions on Semiconductor Manufacturing 2005年第4期18卷 473-474页

作者： D. Boning Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Cambridge MA USA

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Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy

Characterization of ultrathin strained-Si channel layers of ...

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2005 materials Research Society Spring Meeting

作者： Anjum, Dalaver H. Li, Jian Xia, Guangrui Hoyt, Judy L. Hull, Robert Department of Materials Science and Engineering University of Virginia 116 Engineer's Way Charlottesville VA 22904 United States Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 United States Burnham Institute 10901 North Torrey Pines Road San Diego CA 92037 United States

Strained-Si based Field Effect Transistors (FETs) have enabled improvement of carrier transport in Metal Oxide Semiconductor (MOS)-based devices, both in the ON state of the device and in the sub-threshold region. This leads to devices with higher ratios of on-to-off current, improvements in the device sub-threshold slope, lower voltage operation, and carrier mobility enhancement. However, in order to understand the fundamental physics of these devices, it is important to address the stress conditions of the strained-Si channel layers after device processing, particularly after the ion-implantation process. In this work, we have studied Si+ self ion-implantation and thermally annealed strained-Si channel layers in n-MOSFETs. It has been observed that the density of defects in the strained-Si layer depends upon implant dose as well as thermal treatment. Using energy dispersive spectroscopy (EDS) spectra, it is found that Ge is present in the strained Si layer when analyzed after Si + implantation and rapid thermal annealing. The presence of Ge in the strained Si channel layer causes relaxation of strain. This is verified by Convergent Beam Electron Diffraction (CBED) by measuring the lattice constant of the strained channel. It is concluded that electron mobility enhancements can be degraded in n-MOSFETs due to presence of both Ge up-diffusion and defects. © 2005 Materials Research Society.

关键词： Semiconducting silicon

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A BiCMOS ultra-wideband 3.1-10.6GHz front-end

A BiCMOS ultra-wideband 3.1-10.6GHz front-end

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Custom Integrated Circuits Conference (CICC)

作者： F.S. Lee A.P. Chandrakasan Department of Electrical Engineering and Computer Science M. I. T. MicroSystems Technology Laboratories Cambridge MA USA

A direct-conversion receiver for 500MHz-wide FCC-compliant UWB pulses in the 3.1-10.6GHz licensed band is fabricated using 0.18/spl mu/m SiGe BiCMOS. The packaged chip consists of a wideband LNA, filter, phase-splitter, 802.11a switchable notch filter, 3.1-10.6GHz LO amplifiers, mixers, and baseband channel-select filters/buffers. The average conversion gain, NF and input P1dB are 32dB, 4dB, and -41dBm respectively. The chip draws 30mA from 1.8V. Wireless testing of the receiver at 100Mbps reveals a 2.7/spl times/10/sup -3/ bit-error-rate at -81dBm sensitivity.

关键词： BiCMOS integrated circuits Ultra wideband technology Filters Pulse amplifiers Silicon germanium Germanium silicon alloys Packaging Broadband amplifiers Baseband Noise measurement

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Interaction at Lincoln Laboratory in the 1960's: Looking forward-Looking back

Interaction at Lincoln Laboratory in the 1960's: Looking for...

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Conference on Human Factors in Computing Systems, CHI EA 2005

作者： Buxton, William Baecker, Ron Clark, Wesley Richardson, Fontaine Sutherland, Ivan Bert Sutherland, W.R. Henderson, Austin Microsoft Research Cambridge United Kingdom Dept. of Computer Science University of Toronto Canada Clark Rockoff and Associates Brooklyn NY United States Private Investor Carlisle MA United States Sun Fellow and VP Sun Microsystems United States Sun Microsystems Laboratories United States Department Research Strategy Advanced Concepts and Technology Group Pitney Bowes United States

ISBN: (纸本)1595930027

The activity centered around the TX-2 computer at Lincoln Laboratory in the 1960's laid the foundation for much of HCI. Through the use of archival film footage, and live presentations by some of the key protagonists, this panel is intended to contribute to a more general awareness of this work, its historical importance to HCI, and its relevance to research today.

关键词： Human computer interaction

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An on-chip blood serum separator using self-assembled silica microsphere filter

An on-chip blood serum separator using self-assembled silica...

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： Jungyoup Han Se Hwan Lee Youngmoo Heo Chul Jin Hwang C.H. Ahn Microsystems and BioMEMS Laboratory Department of Electrical and Computer Engineering and Computer Science University of Cincinnati Cincinnati OH USA Korea Institute of Industrial and Technology Incheon South Korea

In this paper, we report a disposable on-chip blood serum separator using self-assembled silica microsphere filter, which can passively separate serum from human blood. A self-assembly packing method was developed for packing silica microspheres through a microfluidic channel on cyclic olefin copolymer (COC) substrate. Using the self-assembled microsphere filter, serum has been successfully separated from diluted human blood. The filters realized in this work are suitable for incorporating into a disposable polymer lab-on-a-chip, which can perform point-of-care testing (POTC) for clinical diagnostics using human blood.

关键词： Blood Particle separators Silicon compounds Filters Humans Self-assembly Microfluidics Polymers Lab-on-a-chip Performance evaluation

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